IS725 HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS l UL recognised, File No. E91231 DESCRIPTION The IS725 is an optically coupled isolator consisting of infrared light emitting diode and a high voltage NPN silicon photo darlington which has an integral base-emitter resistor to optimise switching speed and elevated temperature characteristics in a standard 6pin dual in line plastic package. FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l High Current Transfer Ratio ( 1000% min) l High BVCEO (300V min.) l Low collector dark current :1µA max. at 200V VCE l Low input current 1mA IF APPLICATIONS l Modems l Copiers, facsimiles l Numerical control machines l Signal transmission between systems of different potentials and impedances Dimensions in mm 2.54 1 7.0 6.0 7.62 6.62 4 7.62 4.0 3.0 13° Max 0.5 3.0 0.5 3.35 0.26 ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 50mA 6V 70mW OUTPUT TRANSISTOR 7.62 300V 300V 6V 150mA 300mW POWER DISSIPATION Total Power Dissipation 10.46 9.86 5 3 OPTION G SURFACE MOUNT 0.6 0.1 2 1.2 Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-baseVoltage BVECO Collector Current IC Power Dissipation OPTION SM 6 1.25 0.75 350mW 0.26 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1YD England Tel: (01429)863609 Fax : (01429) 863581 e-mail [email protected] http://www.isocom.com 7/12/00 DB91065m-AAS/A1 ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted ) Input Output PARAMETER MIN TYP MAX UNITS Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) 6 Collector-emitter Breakdown (BVCEO ) Collector-base Breakdown (BVCBO ) Emitter-base Breakdown (BVEBO ) 1.2 1.4 V V µA IF = 10mA IR = 10µA VR = 6V 300 300 V V IC = 1mA IC = 0.1mA 6 V IE = 0.1mA 1 µA VCE = 200V 1.2 % V 1mA IF , 2V VCE 20mA IF , 100mA IC VRMS VPK See note 1 See note 1 Ω pF VIO = 500V (note 1) V = 0, f =1MHz kHz VCE = 2V, IC= 20mA, RL = 100Ω, RBE= open µs µs VCE = 2V, IC= 20mA, RL = 100Ω, RBE= open 10 Collector-emitter Dark Current (ICEO ) Coupled Current Transfer Ratio (CTR) 1000 Collector-emitter Saturation VoltageVCE(SAT) Input to Output Isolation Voltage VISO 4000 5300 7500 Input-output Isolation Resistance RISO 5x1010 Input-output Capacitance Cf Note 1 Note 2 Cut-off frequency fc Output Rise Time Output Fall Time tr tf TEST CONDITION 1 1 300 100 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. FIGURE 1 VCC Input ton 100Ω toff tr Input 7/12/00 IC = 20mA Output tf Output 10% 10% 90% 90% DB91065m-AAS/A1 Collector Power Dissipation vs. Ambient Temperature Collector Current vs. Collector-emitter Voltage 300 200 100 120 2mA 100 80 60 1mA 40 IF = 0.5mA 20 0 0 -30 0 25 50 75 100 0 125 0.4 Forward Current vs. Ambient Temperature Relative current transfer ratio Forward current I F (mA) 1.6 2.0 IF = 1mA VCE= 2V 1.5 50 40 30 20 10 0 1.0 0.5 0 -30 0 25 50 75 100 125 -30 0 25 50 75 Ambient temperature TA ( °C ) Ambient temperature TA ( °C ) 10-5 Collector dark current I CEO (A) 1.2 1.0 0.8 IF = 20mA IC = 100mA 0.6 100 Collector Dark Current vs. Ambient Temperature Collector-emitter Saturation Voltage vs. Ambient Temperature (V) CE(SAT) 1.2 Relative Current Transfer Ratio vs. Ambient Temperature 60 Collector-emitter saturation voltage V 0.8 Collector-emitter voltage VCE ( V ) Ambient temperature TA ( °C ) 0.4 0.2 0 VCE= 200V 10-6 10-7 10-8 10-9 10-10 10-11 -30 0 25 50 75 Ambient temperature TA ( °C ) 7/12/00 4mA 10mA 140 Collector current I C (mA) Collector power dissipation P C (mW) 400 100 -30 0 25 50 75 100 Ambient temperature TA ( °C ) DB91065m-AAS/A1