ISSI IS62WV20488ALL IS62WV20488BLL 2M x 8 HIGH-SPEED LOW POWER CMOS STATIC RAM FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single power supply – VDD 1.65V to 2.2V (IS62WV20488ALL) speed = 35ns for Vcc = 1.65V to 2.2V – VDD 2.4V to 3.6V (IS62WV20488BLL) speed = 25ns for Vcc = 2.4V to 3.6V • Packages available: – 48-ball miniBGA (9mm x 11mm) – 44-pin TSOP (Type II) • Industrial Temperature Support • Lead-free available ® PRELIMINARY INFORMATION JULY 2006 DESCRIPTION The ISSI IS62WV20488ALL/BLL is a high-speed, low power, 2M-word by 8-bit CMOS static RAM. The IS62WV20488ALL/BLL is fabricated using ISSI's highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CS1 is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1 is LOW, CS2 is HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. The IS62WV20488ALL/BLL operates from a single power supply and all inputs are TTL-compatible. The IS62WV20488ALL/BLL is available in 48 ball mini BGA and 44-pin TSOP (Type II) packages. FUNCTIONAL BLOCK DIAGRAM A0-A20 DECODER 2M X 8 MEMORY ARRAY I/O DATA CIRCUIT COLUMN I/O VDD GND I/O0-I/O7 CS2 CS1 OE CONTROL CIRCUIT WE Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. 00B 06/21/06 1 IS62WV20488ALL IS62WV20488BLL ISSI ® PIN CONFIGURATION 48-pin Mini BGA (M ) (9mm x 11mm) 1 2 3 4 5 44-pin TSOP (Type II ) 6 A NC OE A0 A1 A2 CS2 B NC NC A3 A4 CS1 I/O0 C NC NC A5 A6 I/O1 I/O2 D GND NC A17 A7 I/O3 VDD E VDD NC NC A16 I/O4 GND F NC NC A14 A15 I/O5 I/O6 G NC A19 A12 A13 WE I/O7 H A18 A8 A9 A10 A11 A20 NC NC A0 A1 A2 A3 A4 CS1 I/O0 I/O1 VDD GND I/O2 I/O3 WE A5 A6 A7 A8 A9 NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 NC NC A20 A18 A17 A16 A15 OE I/O7 I/O6 GND VDD I/O5 I/O4 A14 A13 A12 A11 A10 A19 NC NC PIN DESCRIPTIONS 2 A0-A20 Address Inputs CS1, CS2 Chip Enable Input OE Output Enable Input WE Write Enable Input I/O0-I/O7 Data Input / Output VDD Power GND Ground NC No Connection Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. 00B 06/21/06 IS62WV20488ALL IS62WV20488BLL ISSI ® TRUTH TABLE Mode Not Selected (Power-down) Output Disabled Read Write WE CS1 CS2 OE I/O Operation VDD Current X X H H L H X L L L X L H H H X X H L X High-Z ISB1, ISB2 High-Z DOUT DIN ICC ICC ICC ABSOLUTE MAXIMUM RATINGS(1) Symbol VTERM VDD TSTG PT Parameter Terminal Voltage with Respect to GND VDD Relates to GND Storage Temperature Power Dissipation Value –0.5 to VDD + 0.5 –0.3 to 4.0 –65 to +150 1.0 Unit V V °C W Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. CAPACITANCE(1,2) Symbol Parameter CIN Input Capacitance CI/O Input/Output Capacitance Conditions Max. Unit VIN = 0V 6 pF VOUT = 0V 8 pF Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 3.3V. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. 00B 06/21/06 3 IS62WV20488ALL IS62WV20488BLL ISSI ® OPERATING RANGE (VDD) (IS62WV20488ALL) Range Ambient Temperature Commercial 0°C to +70°C Industrial –40°C to +85°C VDD (35 nS) 1.65V-2.2V 1.65V-2.2V OPERATING RANGE (VDD) (IS62WV20488BLL)(1) Range Ambient Temperature Commercial 0°C to +70°C Industrial –40°C to +85°C VDD (25 nS) 2.4V-3.6V 2.4V-3.6V Note: 1. When operated in the range of 2.4V-3.6V, the device meets 25ns. When operated in the range of 3.3V + 5%, the device meets 15ns. 4 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. 00B 06/21/06 IS62WV20488ALL IS62WV20488BLL ISSI ® DC ELECTRICAL CHARACTERISTICS (Over Operating Range) VDD = 2.4V-3.6V Symbol Parameter Test Conditions Min. Max. Unit VOH Output HIGH Voltage VDD = Min., IOH = –1.0 mA 1.8 — V VOL Output LOW Voltage VDD = Min., IOL = 1.0 mA — 0.4 V VIH Input HIGH Voltage 2.0 VDD + 0.3 V VIL Input LOW Voltage(1) –0.3 0.8 V ILI Input Leakage GND ≤ VIN ≤ VDD –1 1 µA ILO Output Leakage GND ≤ VOUT ≤ VDD, Outputs Disabled –1 1 µA Note: 1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested. VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width - 2.0 ns). Not 100% tested. DC ELECTRICAL CHARACTERISTICS (Over Operating Range) VDD = 1.65V-2.2V Symbol Parameter Test Conditions VDD Min. Max. Unit VOH Output HIGH Voltage IOH = -0.1 mA 1.65-2.2V 1.4 — V VOL Output LOW Voltage IOL = 0.1 mA 1.65-2.2V — 0.2 V VIH VIL(1) Input HIGH Voltage 1.65-2.2V 1.4 VDD + 0.2 V Input LOW Voltage 1.65-2.2V –0.2 0.4 V ILI Input Leakage GND ≤ VIN ≤ VDD –1 1 µA ILO Output Leakage GND ≤ VOUT ≤ VDD, Outputs Disabled –1 1 µA Note: 1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested. VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width - 2.0 ns). Not 100% tested. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. 00B 06/21/06 5 IS62WV20488ALL IS62WV20488BLL ISSI ® POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter Test Conditions ICC VDD = Max., IOUT = 0 mA, f = fMAX VDD Dynamic Operating Supply Current Min. Com. Ind. typ.(2) — — -25 Max. -35 Min. Max. Unit 30 35 — — 25 30 mA 15 ICC1 Operating Supply Current VDD = Max., IOUT = 0 mA, f = 0 Com. Ind. — — 10 15 — — 10 15 mA ISB1 TTL Standby Current (TTL Inputs) VDD = Max., Com. VIN = VIH or VIL Ind. CS1 ≥ VIH, f = 0, CS2 = VIL — — 10 12 — — 10 12 mA ISB2 CMOS Standby Current (CMOS Inputs) VDD = Max., CS1 ≥ VDD – 0.2V, CS2 ≤ 0.2V, VIN ≥ VDD – 0.2V, or VIN ≤ 0.2V, f = 0 — — 1.5 1.5 — — 1.5 1.5 mA Com. Ind. typ.(2) 0.8 Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. 2. Typical values are measured at VDD = 3.0V, TA = 25oC and not 100% tested. 6 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. 00B 06/21/06 IS62WV20488ALL IS62WV20488BLL ISSI ® AC TEST CONDITIONS (LOW POWER) Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level (VRef) Output Load Unit (2.4V-3.6V) 0.4V to VDD-0.3V 1.5ns VDD/2 Unit (1.65V-2.2V) 0.4V to VDD-0.2V 1.5ns VDD/2 See Figures 1 and 2 See Figures 1 and 2 AC TEST LOADS 3070 3070 1.8V/3.3V 1.8V/3.3V OUTPUT OUTPUT 30 pF Including jig and scope 3150 Figure 1 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. 00B 06/21/06 5 pF Including jig and scope 3150 Figure 2 7 IS62WV20488ALL IS62WV20488BLL ISSI ® READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter 25ns Min. Max. 35ns Min. Max. Unit tRC Read Cycle Time 25 — 35 — ns tAA Address Access Time — 25 — 35 ns tOHA Output Hold Time 4 — 4 — ns tACS1/tACS2 CS1/CS2 Access Time — 25 — 35 ns tDOE OE Access Time — 12 — 15 ns (2) OE to High-Z Output — 8 — 10 ns (2) tLZOE OE to Low-Z Output 5 — 5 — ns tHZCS1/tHZCS2(2) CS1/CS2 to High-Z Output 0 8 0 10 ns tLZCS1/tLZCS2(2) CS1/CS2 to Low-Z Output 10 — 10 — ns tHZOE Notes: 1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V/1.5V, input pulse levels of 0.4 to VDD-0.2V/0.4V to VDD-0.3V and output loading specified in Figure 1. 2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. AC WAVEFORMS READ CYCLE NO. 1(1,2) (Address Controlled) (CS1 = OE = VIL, CS2 = WE = VIH) tRC ADDRESS tAA tOHA DOUT 8 PREVIOUS DATA VALID tOHA DATA VALID Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. 00B 06/21/06 IS62WV20488ALL IS62WV20488BLL ISSI ® AC WAVEFORMS READ CYCLE NO. 2(1,3) (CS1, CS2, OE Controlled) tRC ADDRESS tAA tOHA OE tDOE CS1 tHZOE tLZOE tACS1/tACS2 CS2 DOUT tLZCS1/ tLZCS2 HIGH-Z tHZCS DATA VALID Notes: 1. WE is HIGH for a Read Cycle. 2. The device is continuously selected. OE, CS1= VIL. CS2=WE=VIH. 3. Address is valid prior to or coincident with CS1 LOW and CS2 HIGH transition. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. 00B 06/21/06 9 IS62WV20488ALL IS62WV20488BLL ISSI ® WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range) Parameter 25 ns Min. Max. Write Cycle Time 25 — 35 — ns tSCS1/tSCS2 CS1/CS2 to Write End tAW Address Setup Time to Write End 18 — 25 — ns 15 — 25 — ns tHA tSA Address Hold from Write End 0 — 0 — ns Address Setup Time 0 — 0 — ns Symbol tWC 35 ns Min. Max. Unit tPWE tSD WE Pulse Width 18 — 30 — ns Data Setup to Write End 12 — 15 — ns tHD tHZWE(3) Data Hold from Write End 0 — 0 — ns WE LOW to High-Z Output — 12 — 20 ns tLZWE(3) WE HIGH to Low-Z Output 5 — 5 — ns (4) Notes: 1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V/1.5V, input pulse levels of 0.4 to VDD-0.2V/0.4V to VDD-0.3V and output loading specified in Figure 1. 2. The internal write time is defined by the overlap of CS1 LOW, CS2 HIGH and UB or LB, and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the write. 3. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. 4. tPWE > tHZWE + tSD when OE is LOW. AC WAVEFORMS WRITE CYCLE NO. 1 (CS1/CS2 Controlled, OE = HIGH or LOW) tWC ADDRESS tHA tSCS1 CS1 tSCS2 CS2 tAW tPWE WE tSA DOUT tHZWE DATA UNDEFINED tLZWE HIGH-Z tSD DIN 10 tHD DATA-IN VALID Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. 00B 06/21/06 IS62WV20488ALL IS62WV20488BLL ISSI ® AC WAVEFORMS WRITE CYCLE NO. 2 (WE Controlled: OE is HIGH During Write Cycle) tWC ADDRESS OE tHA tSCS1 CS1 tSCS2 CS2 tAW tPWE WE tSA DOUT tHZWE tLZWE HIGH-Z DATA UNDEFINED tSD DIN tHD DATA-IN VALID WRITE CYCLE NO. 3 (WE Controlled: OE is LOW During Write Cycle) tWC ADDRESS OE tHA tSCS1 CS1 tSCS2 CS2 tAW tPWE WE tSA DOUT DATA UNDEFINED tHZWE tLZWE HIGH-Z tSD DIN Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. 00B 06/21/06 tHD DATA-IN VALID 11 IS62WV20488ALL IS62WV20488BLL ISSI ® DATA RETENTION SWITCHING CHARACTERISTICS Symbol Parameter Test Condition Min. VDR Vcc for Data Retention See Data Retention Waveform 1.2 IDR Data Retention Current Vcc = 1.2V, CS1/CS2 ≥ Vcc – 0.2V — tSDR Data Retention Setup Time See Data Retention Waveform tRDR Recovery Time See Data Retention Waveform Typ.(1) Max. Unit 3.6 V 1.5 mA 0 — ns tRC — ns 0.5 Note: 1. Typical values are measured at VDD = 3.0V, TA = 25oC and not 100% tested. DATA RETENTION WAVEFORM (CS1 CS1 Controlled) Data Retention Mode tSDR 3.0V 2.2V tRDR VCC VDR CS1 ≥ VCC CS1 GND - 0.2V DATA RETENTION WAVEFORM (CS2 Controlled) Data Retention Mode 3.0 VCC CS2 2.2V tSDR tRDR VDR 0.4V CS2 ≤ 0.2V GND 12 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. 00B 06/21/06 IS62WV20488ALL IS62WV20488BLL ISSI ® ORDERING INFORMATION Industrial Range: -40°C to +85°C Voltage Range: 2.4V to 3.6V Speed (ns) 25 Order Part No. Package IS62WV20488BLL-25MI IS62WV20488BLL-25MLI IS62WV20488BLL-25TI IS62WV20488BLL-25TLI 48 mini BGA (9mm x 11mm) 48 mini BGA (9mm x 11mm), Lead-free TSOP (Type II) TSOP (Type II), Lead-free Industrial Range: -40°C to +85°C Voltage Range: 1.65V to 2.2V Speed (ns) 35 Order Part No. Package IS62WV20488ALL-35MI IS62WV20488ALL-35TI 48 mini BGA (9mm x 11mm) TSOP (Type II) Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. 00B 06/21/06 13 ISSI PACKAGING INFORMATION ® Mini Ball Grid Array Package Code: M (48-pin) Top View Bottom View φ b (48x) 1 2 3 4 5 6 6 A D 5 4 3 2 1 A e B B C C D D D1 E E F F G G H H e E E1 A2 A SEATING PLANE Notes: 1. Controlling dimensions are in millimeters. A1 Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. D 01/15/03 ISSI PACKAGING INFORMATION ® Mini Ball Grid Array Package Code: M (48-pin) mBGA - 6mm x 8mm MILLIMETERS INCHES Sym. Min. Typ. Max. Min. Typ. Max. N0. Leads 48 A — — 1.20 .— — 0.047 A1 0.25 — 0.40 0.010 — 0.016 A2 0.60 — — 0.024 — D 7.90 8.00 8.10 0.311 0.314 0.319 5.60BSC 0.220BSC E 5.90 6.00 6.10 0.232 0.236 0.240 E1 4.00BSC 0.157BSC e 0.80BSC 0.031BSC D1 b 0.40 0.45 0.50 — 0.016 0.018 0.020 mBGA - 7.2mm x 8.7mm mBGA - 9mm x 11mm MILLIMETERS INCHES Sym. Min. Typ. Max. Min. Typ. Max. N0. Leads 48 MILLIMETERS INCHES Sym. Min. Typ. Max. Min. Typ. Max. N0. Leads 48 A — — 1.20 — — 0.047 A A1 0 .24 — 0.30 0.009 — 0.012 A1 A2 0.60 — — 0.024 — — A2 D 8.60 8.70 8.80 D 10.90 11.00 11.10 0.429 0.433 0.437 5.25BSC 0.207BSC D1 0.339 0.343 0.346 — — 1.20 — — 0.047 0.24 — 0.30 0.60 — — 0.009 — 0.012 0.024 — — 5.25BSC 0.207BSC E 7.10 7.20 7.30 0.280 0.283 0.287 E E1 3.75BSC 0.148BSC E1 3.75BSC 0.148BSC e 0.75BSC 0.030BSC e 0.75BSC 0.030BSC 0.012 0.014 0.016 b b 2 0.30 0.35 0.40 D1 8.90 0.30 9.00 0.35 9.10 0.40 0.350 0.354 0.358 0.012 0.014 0.016 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. D 01/15/03 ISSI ® PACKAGING INFORMATION Plastic TSOP Package Code: T (Type II) N N/2+1 E1 1 Notes: 1. Controlling dimension: millimieters, unless otherwise specified. 2. BSC = Basic lead spacing between centers. 3. Dimensions D and E1 do not include mold flash protrusions and should be measured from the bottom of the package. 4. Formed leads shall be planar with respect to one another within 0.004 inches at the seating plane. E N/2 D SEATING PLANE A ZD . b e Symbol Ref. Std. No. Leads A A1 b C D E1 E e L ZD α Millimeters Min Max Inches Min Max (N) 32 — 1.20 — 0.047 0.05 0.15 0.002 0.006 0.30 0.52 0.012 0.020 0.12 0.21 0.005 0.008 20.82 21.08 0.820 0.830 10.03 10.29 0.391 0.400 11.56 11.96 0.451 0.466 1.27 BSC 0.050 BSC 0.40 0.60 0.016 0.024 0.95 REF 0.037 REF 0° 5° 0° 5° L α A1 Plastic TSOP (T - Type II) Millimeters Inches Min Max Min Max 44 — 1.20 — 0.047 0.05 0.15 0.002 0.006 0.30 0.45 0.012 0.018 0.12 0.21 0.005 0.008 18.31 18.52 0.721 0.729 10.03 10.29 0.395 0.405 11.56 11.96 0.455 0.471 0.80 BSC 0.032 BSC 0.41 0.60 0.016 0.024 0.81 REF 0.032 REF 0° 5° 0° 5° Millimeters Min Max C Inches Min Max 50 — 1.20 0.05 0.15 0.30 0.45 0.12 0.21 20.82 21.08 10.03 10.29 11.56 11.96 0.80 BSC 0.40 0.60 0.88 REF 0° 5° — 0.047 0.002 0.006 0.012 0.018 0.005 0.008 0.820 0.830 0.395 0.405 0.455 0.471 0.031 BSC 0.016 0.024 0.035 REF 0° 5° Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. F 06/18/03