300 SEMICONDUCTOR KR32S018M/F~KR32S033M/F TECHNICAL DATA BIPOLAR LINEAR INTEGRATED CIRCUIT POWER LOW DROPOUT REGULATOR E The KR32SXXXM/F is an efficient linear voltage regulator with very low B dropout voltage (Typically 10mV at light loads and 250mV at 300 ) The KR32SXXXM/F can be enabled, or shut down by a CMOS or TTL 1 B 2 D _ 0.1 0.4 + E F G H I J K L 2.8+0.2/-0.3 _ 0.2 1.9 + 0.95 _ 0.05 0.16 + 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 F A G features include reversed battery protechion, current limiting, over temperature 4 D 3 L C shutdown, and low noise performance with an ultra-low-noise option FEATURES I H J High output voltage accuracy : 1% J Low quiescent current. : IQ(OFF) =3 Very low ground current : 1.8 1.6+0.2/-0.1 _ 0.05 0.70 + C G compatible signal. When disabled. power consumption drops nearly to zero. Dropout ground current is minimized to help prolong battery life. Other key DIM MILLIMETERS _ 0.2 A 2.9 + 5 1 1. VIN 2. GND 3. ON/OFF CONTROL 4. BYPASS 5. VOUT (IOUT=150 ) Low dropout voltage : 250mV (IOUT=300 ) Built-in ON/OFF control terminal 5 2 4 3 Built -in over current , Over heat protection function Reverse-battery protection TSV APPLICATIONS Laptop, notebook, and palmtop computers A K Cellular telephones and battery-powered equipment B J D Consumer and personal electronics C PC Card VCC and VPP regulation and switching 4 E High-effciency linear power supplies 1 2 F 5 SMPS post-regulator/dc-to-dc modules 3 G I LINE-UP DIM A B C D E F G H I J K H TSV SOT-89-5 VOUT (V) ITEM MARKING ITEM MARKING 1.8 KR32S018M B18 KR32S018F D1 2.5 KR32S025M B25 KR32S025F D2 2.6 KR32S026M B26 KR32S026F D3 2.7 KR32S027M B27 KR32S027F D4 2.8 KR32S028M B28 KR32S028F D5 2.85 KR32S285M B2J KR32S285F D6 2.9 KR32S029M B29 KR32S029F D7 3.0 KR32S030M B30 KR32S030F D8 3.1 KR32S031M B31 KR32S031F D9 3.3 KR32S033M B33 KR32S033F D0 2007. 2. 9 Revision No : 0 1 2 3 1. BYPASS 2. GND 3. ON/OFF CONTROL 4. VIN 5. VOUT MILLIMETERS _ 0.10 4.50 + _ 0.03 3.00 + _ 0.10 1.60 + _ 0.08 0.90 + _ 0.05 2.50 + _ 0.15 4.30 + _ 0.03 0.42 + _ 0.03 1.50 + _ 0.03 0.47 + _ 0.02 0.31 + _ 0.07 1.50 + * Heat sink is common to 2.GND SOT-89-5 1/6 KR32S018M/F~KR32S033M/F MARKING PIN DESCRIPTIONS 5 4 Lot No. PIN NO. NAME 1 VIN 2 GND 3 ON/OFF Control Enable/Shutdown (Input):CMOS conpatible input. Logic high = Enable, Logic low or open = Shutdown 4 Bypass Reference Bypass : Connect external 470pF capacitor to GND to reduce output noise. May be left open 5 VOUT Type Name 2 1 FUNCTION Supply Input Ground 3 < TSV > Regulator Output PIN DESCRIPTIONS MARKING 5 PIN NO. NAME FUNCTION 1 Bypass Reference Bypass : Connect external 470pF capacitor to GND to reduce output 2 GND 3 ON/OFF Control 4 VIN 5 VOUT Lot No. 4 Type Name 1 2 3 < SOT-89-5 > Enable/Shutdown (Input):CMOS conpatible input. Logic high = Enable, Logic low or open = Shutdown Supply Input Regulator Output Fig. 2 TEST CIRCUIT / APPLICATION CIRCUIT Fig. 1 BLOCK DIAGRAM VIN Ground 5 1 VOUT VIN = 3.8V 1 5 COUT BYPASS COUT = 2.2 µF (tantalum) 4 CBYPASS VOUT = 2.8V 2 KR32S028M + Bandgap Ref. ON/OFF CONTROL 3 4 ON/OFF 3 CONTROL Current Limit Thermal Shutdown CBYPASS = 470pF 2 GND 2007. 2. 9 Revision No : 1 2/6 KR32S018M/F~KR32S033M/F MAXIMUM RATINGS (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Supply Input Voltage VIN 16 V ON/OFF Control Voltage VC 5 V Output Current IOUT 300 PD 900 Tj 150 Topr -40~125 Tstg -55~150 TSV Power Dissipation (Note) SOT-89-5 Junction Temperature Operating Junction Temperature Storage Temperature Note) Package mounted on a ceramic board. (600m 2 0.8m) ELECTRICAL CHARACTERISTICS (Unless otherwise specified, VIN=VOUT+1V, IOUT=100 CHARACTERISTIC Output Voltage mW , COUT=4.7 SYMBOL , Tj=25 ) MIN. TYP. MAX. KR32S018M/F 1.782 1.8 1.818 KR32S025M/F 2.475 2.5 2.525 KR32S026M/F 2.574 2.6 2.626 KR32S027M/F 2.673 2.7 2.727 2.772 2.8 2.828 2.8215 2.85 2.8785 2.871 2.9 2.929 KR32S030M/F 2.97 3.0 3.03 KR32S031M/F 3.069 3.1 3.131 KR32S033M/F 3.267 3.3 3.333 KR32S028M/F VOUT KR32S285M/F TEST CONDITION VIN=VOUT+1V KR32S029M/F Load Regulation Reg Load Line Regulation Reg Line Dropout Voltage Temperature Coefficient of output voltage UNIT V Io=100 ~300 VIN=VOUT+1V~12V - 0.05 0.7 % - 0.009 0.05 %/V VD-1 IOUT=100 - 10 60 VD-2 IOUT=50 - 115 175 VD-3 IOUT=150 - 175 300 VD-4 IOUT=300 - 250 400 Tj=-40 - 40 80 TCVo 125 ppm/ Ripple Rejection RR f=120Hz - 75 - Output Noise Voltage VNO IOUT=50 , COUT=2.2 , CBYPASS=470pF - 30 - rms 2.0 - - V 2 5 20 - - 0.4 -1 Output ON-state voltage for control VC(ON) Output ON-state current for control IC(ON) Output OFF-state voltage for control VC(OFF) Output OFF-state current for control Quiescent Current Quiescent Current (OFF Mode) 2007. 2. 9 Revision No : 1 VC=2.0V - IC(OFF-1) VC=0.4V - 0.01 IC(OFF-2) VC=0.18V - 0.01 -2 IQ1 VC=3V, IOUT=100 - 80 130 IQ2 VC=3V, IOUT=50 - 350 650 IQ3 VC=3V, IOUT=150 - 1.8 2.5 IQ4 VC=3V, IOUT=300 - 4.0 5.5 IQ(OFF-1) VC=0.4V - 0.05 3 IQ(OFF-2) VC=0.18V - 0.10 8 V 3/6 KR32S018M/F~KR32S033M/F fIN - R.R (2) 0 VIN= 3.6V VOUT= 2.6V -20 -40 -60 -80 IOUT= 100mA COUT= 1µF -100 10 100 1k 10k 100k 1M RIPPLE REJECTION R.R (dB) RIPPLE REJECTION R.R (dB) fIN - R.R (1) 0 VIN= 3.6V VOUT= 2.6V -20 -40 -60 CBYP = 0.01µF -100 10 10M IOUT = 100µA COUT = 2.2µF -80 INPUT FREQUENCY fIN (Hz) 100 -20 -40 -60 -80 IOUT= 1mA COUT= 1µF 1k 10k 100k 1M RIPPLE REJECTION R.R (dB) RIPPLE REJECTION R.R (dB) VIN= 3.6V 100 0 -20 -40 -60 10M IOUT = 1mA COUT = 2.2µF -80 CBYP = 0.01µF -100 10 100 1k 10k 100k 1M 10M INPUT FREQUENCY fIN (Hz) fIN - R.R (6) 0 VIN= 3.6V VOUT= 2.6V -20 -40 -60 -80 IOUT= 10mA COUT= 1µF 100 1k 10k 100k 1M INPUT FREQUENCY fIN (Hz) Revision No : 1 10M RIPPLE REJECTION R.R (dB) 0 RIPPLE REJECTION R.R (dB) 10M VIN= 3.6V fIN - R.R (5) 2007. 2. 9 1M VOUT= 2.6V INPUT FREQUENCY fIN (Hz) -100 10 100k fIN - R.R (4) VOUT= 2.6V -100 10 10k INPUT FREQUENCY fIN (Hz) fIN - R.R (3) 0 1k VIN= 3.6V VOUT= 2.6V -20 -40 -60 IOUT = 10mA COUT = 2.2µF -80 CBYP = 0.01µF -100 10 100 1k 10k 100k 1M 10M INPUT FREQUENCY fIN (Hz) 4/6 KR32S018M/F~KR32S033M/F VIN= 3.6V VOUT= 2.6V -20 -40 -60 -80 IOUT= 100mA COUT= 1µF 100 1k 10k 100k 1M TURN ON TIME (µs) -20 -40 -60 IOUT = 100mA COUT = 2.2µF -80 CBYP = 0.01µF 100 1k 10k 100k 1M INPUT FREQUENCY fIN (Hz) INPUT FREQUENCY fIN (Hz) VD - R.R (1) VD - R.R (2) 10M 100 RIPPLE REJECTION R.R (dB) 50 1mA 40 10mA IOUT = 100mA 30 20 COUT = 1µF 10 90 1mA 80 70 60 IOUT = 100mA 10mA 50 40 30 20 COUT = 2.2µF 10 CBYP = 0.01µF 0 0 0.1 0.2 0.3 0.1 0.2 0.3 DROPOUT VOLTAGE VD (V) DROPOUT VOLTAGE VD (V) CBYPASS - TIME IOUT - VD 103 102 101 1 10 0 0.4 104 102 103 CAPACITANCE CBYPASS (pF) 2007. 2. 9 VIN= 6V VOUT= 5V -100 10 10M 60 0 RIPPLE REJECTION R.R (dB) 0 0 -100 10 RIPPLE REJECTION R.R (dB) fIN - R.R (8) DROPOUT VOLTAGE VD (mV) RIPPLE REJECTION R.R (dB) fIN - R.R (7) Revision No : 1 104 0.4 400 300 200 100 0 0 100 200 300 OUTPUT CURRNET IOUT (mA) 5/6 KR32S018M/F~KR32S033M/F f - NOISE (1) f - NOISE (2) 10 10 1 NOISE (mV/ Hz ) NOISE (mV/ Hz ) 10mA, COUT = 1µF 10-1 10-2 -3 10 10-4 10 1mA COUT = 1µF CBYP = 10nF 100 VOUT= 5V 1k 10k 100k 1M 10 VOUT = 5V COUT = 10µF Electrolytic 100 1k 10k 100k 1M 10M 10 100mA 10mA VOUT = 5V COUT = 22µF 1mA NOISE (mV/ Hz ) NOISE (mV/ Hz ) 1k 10k 100k 1M 100mA 10-2 10-4 10 10M 10mA 10-1 10 Tantalum CBYP = 10nF 100 1 -3 1mA VOUT = 5V COUT = 10µF Electrolytic CBYP = 100pF 100 1k 10k 100k FREQUENCY (Hz) FREQUENCY (Hz) f - NOISE (5) f - NOISE (6) 1M 10M 10 1 10mA 100mA -1 10 10-2 1mA VOUT = 5V 10-3 COUT = 10µF 1 10mA -1 10 100mA 10-2 VOUT = 5V 10-3 COUT = 10µF Electrolytic CBYP = 1nF 100 NOISE (mV/ Hz ) NOISE (mV/ Hz ) 1mA -3 f - NOISE (4) 10 1k 10k 100k FREQUENCY (Hz) 2007. 2. 9 10-2 f - NOISE (3) 10-2 10-4 10 10mA FREQUENCY (Hz) 10-1 10-4 10 10-1 FREQUENCY (Hz) 1 10 100mA 10-4 10 10M 10 -3 1 Revision No : 1 1M 10M 10-4 10 1mA Electrolytic CBYP = 10nF 100 1k 10k 100k 1M 10M FREQUENCY (Hz) 6/6