SEMICONDUCTOR PG03EAESM TECHNICAL DATA TVS Diode for ESD Protection in Portable Electronics Protection in Portable Electronics Applications. E FEATURES B Transient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) G A 2 C H Small package for use in portable electronics. DIM A B D 3 1 D Suitable replacement for Multi-Layer Varistors in ESD protection applications. E G H Protects one I/O or power line. MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 + 0.27+0.10/-0.05 _ 0.10 1.60 + _ 0.10 1.00 + 0.50 _ 0.05 0.13 + J Low clamping voltage. C Low leakage current. J 1. (TVS) D1 CATHODE APPLICATIONS 2. (TVS) D2 CATHODE Cell phone handsets and accessories. 3. COMMON ANODE Microprocessor based equipment. Personal digital assistants (PDA s) Notebooks, desktops, & servers. ESM Portable instrumentation. Pagers peripherals. Marking Type Name MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL RATING UNIT PPK 60 W Peak Pulse Power (tp=8/20 s) Peak Pulse Current (tp=8/20 s) IPP 5 Junction Temperature Tj 150 Storage Temperature Tstg -55 150 CHARACTERISTIC Reverse Stand-Off Voltage Revision No : 2 1 TEST CONDITION MIN. TYP. MAX. UNIT VRWM - - - 3 V 5.32 - 5.88 V VRWM=3V - - 5.0 A VC(1) IPP=1A, tp=8/20 s - - 10 V VC(2) IPP=5A, tp=8/20 s - - 15 V CJ VR=0V, f=1MHz - 35 45 pF Clamping Voltage Junction Capacitance D1 SYMBOL IR Reverse Leakage Current A ) VBR Reverse Breakdown Voltage 3 D2 2 ELECTRICAL CHARACTERISTICS (Ta=25 2007. 5. 25 E1 It=5mA 1/2 PG03EAESM POWER DERATION CURVE 1K 110 RATED POWER OR IPP (%) PEAK PULSE POWER PPP (W) NON-REPETITIVE PEAK PULSE POWER VS. PULSE TIME 100 10 1 10 100 90 80 70 60 50 40 Peak Pulse Power 8/20us 30 20 10 0 Average Power 0 100 PULSE DURATION tP (µs) 25 50 75 150 CJ - VR 40 110 (pF) Waveform Parameters : tr=8µs td=20µs 100 90 80 70 60 50 40 e -t td=lpp/2 30 20 10 0 0 5 10 15 20 TIME (µs) Revision No : 2 25 35 30 CAPACITANCE CJ PEAK PULSE CURRENT IPP (%) 125 AMBIENT TEMPERATURE Ta ( C) PULSE WAVEFORM 2007. 5. 25 100 30 25 20 15 10 5 0 0 1 2 3 4 5 REVERSE VOLTAGE VR (V) 2/2