SEMICONDUCTOR PG12FXTE6 TECHNICAL DATA TVS Diode Array for ESD Protection in Portable Electronics Protection in Portable Electronics Applications. B B1 FEATURES C A 15kV(Air), 8kV(Contact). 1 6 2 5 3 4 DIM A A1 B B1 C D H J A1 Transient protection for data lines to IEC 61000-4-2(ESD) C 150 Watts peak pulse power (tp=8/20 s) D Protects five I/O lines. Low clamping voltage. Low operating and leakage current. P P P 5 J H Small package for use in portable electronics. MILLIMETERS _ 0.05 1.6 + _ 0.05 1.0 + _ 0.05 1.6 + _ 0.05 1.2 + 0.50 _ 0.05 0.2 + _ 0.05 0.5 + _ 0.05 0.12 + APPLICATIONS Cell phone handsets and accessories. 1. 2. 3. 4. 5. 6. Cordless phones. Personal digital assistants (PDA’s) Notebooks, desktops, & servers. D1 COMMON ANODE D2 D3 D4 D5 Portable instrumentation. TES6 Set-Top Box, DVD Player. Digital Camera. MAXIMUM RATING (Ta=25 Marking ) 6 CHARACTERISTIC SYMBOL RATING UNIT Peak Pulse Power (tp=8/20 s) PPK 150 W Peak Pulse Current (tp=8/20 s) IPP 6 A Operating Temperature Tj -55 150 Tstg -55 150 Storage Temperature Type Name 5 4 Lot No. 2X 1 2 6 D5 3 5 4 D4 D3 D1 D2 1 2 3 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Reverse Stand-Off Voltage SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VRWM - - - 12 V 13.3 - - V VBR Reverse Breakdown Voltage It=1mA Reverse Leakage Current IR VRWM=5V - - 0.5 A Clamping Voltage VC IPP=6A, tp=8/20 s - - 25 V Junction Capacitance CJ - - 60 pF 2008. 9. 10 Revision No : 2 VR=0V, f=1MHz Between I/O Pins and GND 1/2 PG12FXTE6 NON-REPETITIVE PEAK PULSE POWER VS. PULSE TIME POWER DERATION CURVE 110 RATED POWER OR IPP (%) PEAK PULSE POWER PPP (W) 1K 100 10 1 100 10 100 90 80 70 60 50 40 Peak Pulse Power 8/20us 30 20 10 0 Average Power 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) PULSE DURATION tp (µs) PULSE WAVEFORM PEAK PULSE CURRENT I PP (%) 110 Waveform Parameters : tr=8µs td=20µs 100 90 80 70 60 50 40 e -t td=lpp/2 30 20 10 0 0 5 10 15 20 25 30 TIME (µs) 2008. 9. 10 Revision No : 2 2/2