TECHNICAL DATA KK74ACT640 Octal 3-State Inverting Bus Transceiver High-Speed Silicon-Gate CMOS The KK74ACT640 is identical in pinout to the LS/ALS640, HC/HCT640. The KK74ACT640 may be used as a level converter for interfacing TTL or NMOS outputs to High Speed CMOS inputs. The KK74ACT640 is a 3-state transceiver that is used for 2-way asynchronous communication between data buses. The device has an active-low Output Enable pin, which is used to place the I/O ports into high-impedance states. The Direction control determines whether data flows from A to B or from B to A. • TTL/NMOS Compatible Input Levels • Outputs Directly Interface to CMOS, NMOS, and TTL • Operating Voltage Range: 4.5 to 5.5 V • Low Input Current: 1.0 µA; 0.1 µA @ 25°C • Outputs Source/Sink 24 mA ORDERING INFORMATION KK74ACT640N Plastic KK74ACT640DW SOIC TA = -40° to 85° C for all packages PIN ASSIGNMENT LOGIC DIAGRAM FUNCTION TABLE Control Inputs Output Enable Direction Operation L L Data Transmitted from Bus B to Bus A (inverted) L H Data Transmitted from Bus A to Bus B (inverted) H X Buses Isolated (High Impedance State) PIN 20=VCC PIN 10 = GND X = don’t care 1 KK74ACT640 MAXIMUM RATINGS* Symbol Parameter Value Unit -0.5 to +7.0 V VCC DC Supply Voltage (Referenced to GND) VIN DC Input Voltage (Referenced to GND) -0.5 to VCC +0.5 V DC Output Voltage (Referenced to GND) -0.5 to VCC +0.5 V DC Input Current, per Pin ±20 mA IOUT DC Output Sink/Source Current, per Pin ±50 mA ICC DC Supply Current, VCC and GND Pins ±50 mA PD Power Dissipation in Still Air, Plastic DIP+ SOIC Package+ 750 500 mW -65 to +150 °C 260 °C VOUT IIN Tstg TL Storage Temperature Lead Temperature, 1 mm from Case for 10 Seconds (Plastic DIP or SOIC Package) * Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. +Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C SOIC Package: : - 7 mW/°C from 65° to 125°C RECOMMENDED OPERATING CONDITIONS Symbol VCC VIN, VOUT DC Supply Voltage (Referenced to GND) DC Input Voltage, Output Voltage (Referenced to GND) TJ Junction Temperature (PDIP) TA Operating Temperature, All Package Types IOH Output Current - High IOL Output Current - Low tr, tf * Parameter Input Rise and Fall Time (except Schmitt Inputs) * Min Max Unit 4.5 5.5 V 0 VCC V 140 °C +85 °C -24 mA 24 mA 10 8.0 ns/V -40 VCC =4.5 V VCC =5.5 V 0 0 VIN from 0.8 V to 2.0 V This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range GND≤(VIN or VOUT)≤VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. 2 KK74ACT640 DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) VCC Symbol Parameter Test Conditions Guaranteed Limits V 25 °C -40°C to 85°C Unit VIH Minimum HighLevel Input Voltage VOUT=0.1 V or VCC-0.1 V 4.5 5.5 2.0 2.0 2.0 2.0 V VIL Maximum Low Level Input Voltage VOUT=0.1 V or VCC-0.1 V 4.5 5.5 0.8 0.8 0.8 0.8 V VOH Minimum HighLevel Output Voltage IOUT ≤ -50 µA 4.5 5.5 4.4 5.4 4.4 5.4 V 4.5 5.5 3.86 4.86 3.76 4.76 4.5 5.5 0.1 0.1 0.1 0.1 VIN=VIH or VIL IOL=24 mA IOL=24 mA 4.5 5.5 0.36 0.36 0.44 0.44 ±0.1 ±1.0 µA 1.5 mA ±6.0 µA * VIN=VIH or VIL IOH=-24 mA IOH=-24 mA VOL Maximum LowLevel Output Voltage IOUT ≤ 50 µA V * IIN Maximum Input Leakage Current VIN=VCC or GND 5.5 ∆ICCT Additional Max. ICC/Input VIN=VCC - 2.1 V 5.5 IOZ Maximum ThreeState Leakage Current VIN(OE)= VIH or VIL VIN=VCC or GND VOUT=VCC or GND 5.5 IOLD +Minimum Dynamic Output Current VOLD=1.65 V Max 5.5 75 mA IOHD +Minimum Dynamic Output Current VOHD=3.85 V Min 5.5 -75 mA ICC Maximum Quiescent Supply Current (per Package) VIN=VCC or GND 5.5 80 µA ±0.6 8.0 * All outputs loaded; thresholds on input associated with output under test. +Maximum test duration 2.0 ms, one output loaded at a time. 3 KK74ACT640 AC ELECTRICAL CHARACTERISTICS (VCC=5.0 V ± 10%, CL=50pF,Input tr=tf=3.0 ns) Guaranteed Limits Symbol Parameter 25 °C -40°C to 85°C Min Max Min Max Unit tPLH Propagation Delay, A to B or B to A (Figure 1) 1.5 1.5 1.0 8.5 ns tPHL Propagation Delay, A to B or B to A (Figure 1) 1.5 8.0 1.0 9.0 ns tPZH Propagation Delay,Direction or Output Enable to A or B (Figure 2) 1.5 10.0 1.0 11.0 ns tPZL Propagation Delay,Direction or Output Enable to A or B (Figure 2) 1.5 10.0 1.0 11.0 ns tPHZ Propagation Delay,Direction or Output Enable to A or B (Figure 2) 1.5 10.0 1.0 11.0 ns tPLZ Propagation Delay,Direction or Output Enable to A or B (Figure 2) 1.5 10.0 1.0 11.0 ns CIN Maximum Input Capacitance 4.5 4.5 pF Maximum Three-State I/O Capacitance (Output in High-Impedance State) 15 15 pF COUT Typical @25°C,VCC=5.0 V CPD Power Dissipation Capacitance Figure 1. Switching Waveforms 45 pF Figure 2. Switching Waveforms 4 KK74ACT640 EXPANDED LOGIC DIAGRAM 5 KK74ACT640 N SUFFIX PLASTIC DIP (MS - 001AD) A Dimension, mm 11 20 B 1 10 Symbol MIN MAX A 24.89 26.92 B 6.1 7.11 5.33 C F L C -T- SEATING PLANE D 0.36 0.56 F 1.14 1.78 G 2.54 H 7.62 N G K M J H D 0.25 (0.010) M T NOTES: 1. Dimensions “A”, “B” do not include mold flash or protrusions. Maximum mold flash or protrusions 0.25 mm (0.010) per side. J 0° 10° K 2.92 3.81 L 7.62 8.26 M 0.2 0.36 N 0.38 D SUFFIX SOIC (MS - 013AC) A 20 11 H Dimension, mm B 1 P 10 G R x 45 C -TK D SEATING PLANE J 0.25 (0.010) M T C M NOTES: 1. Dimensions A and B do not include mold flash or protrusion. 2. Maximum mold flash or protrusion 0.15 mm (0.006) per side for A; for B ‑ 0.25 mm (0.010) per side. F M Symbol MIN MAX A 12.6 13 B 7.4 7.6 C 2.35 2.65 D 0.33 0.51 F 0.4 1.27 G 1.27 H 9.53 J 0° 8° K 0.1 0.3 M 0.23 0.32 P 10 10.65 R 0.25 0.75 6