IKSEMICON IN74HC620AN

TECHNICAL DATA
IN74HC620A
Octal 3-State Inverting
Bus Transceiver
High-Performance Silicon-Gate CMOS
The IN74HC620A is identical in pinout to the LS/ALS620. The device
inputs are compatible with standard CMOS outputs; with pullup resistors,
they are compatible with LS/ALSTTL outputs.
The IN74HC620A is a 3-state transceiver that is used for 2-way
communication between data buses. Two separate enables are available.
The enable for bus A to B is active-high, the enable for bus B to A is
active-low.
• Outputs Directly Interface to CMOS, NMOS, and TTL
• Operating Voltage Range: 2.0 to 6.0 V
• Low Input Current: 1.0 µA
• High Noise Immunity Characteristic of CMOS Devices
ORDERING INFORMATION
IN74HC620AN Plastic
IN74HC620ADW SOIC
TA = -55° to 125° C for all packages
PIN ASSIGNMENT
LOGIC DIAGRAM
FUNCTION TABLE
Control Inputs
PIN 20=VCC
PIN 10 = GND
Output
Enable
Direction
Operation
L
L
Data Transmitted
from Bus B to
Bus A (inverted)
H
H
Data Transmitted
from Bus A to
Bus B (inverted)
H
L
Buses Isolated
L
H
(High Impedance
State)
Rev. 00
IN74HC620A
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
-0.5 to +7.0
V
VCC
DC Supply Voltage (Referenced to GND)
VIN
DC Input Voltage (Referenced to GND)
-1.5 to VCC +1.5
V
DC Output Voltage (Referenced to GND)
-0.5 to VCC +0.5
V
DC Input Current, per Pin
±20
mA
IOUT
DC Output Current, per Pin
±35
mA
ICC
DC Supply Current, VCC and GND Pins
±75
mA
PD
Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
750
500
mW
-65 to +150
°C
260
°C
VOUT
IIN
Tstg
TL
Storage Temperature
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
*
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C
SOIC Package: : - 7 mW/°C from 65° to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
VIN, VOUT
Parameter
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
TA
Operating Temperature, All Package Types
tr, tf
Input Rise and Fall Time
(Figure 1)
VCC =2.0 V
VCC =4.5 V
VCC =6.0 V
Min
Max
Unit
2.0
6.0
V
0
VCC
V
-55
+125
°C
0
0
0
1000
500
400
ns
This device contains protection circuitry to guard against damage due to high static voltages or electric fields.
However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this
high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range GND≤(VIN or
VOUT)≤VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused
outputs must be left open. I/O pins must be connected to a properly terminated line or bus.
Rev. 00
IN74HC620A
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
VCC
Symbol
Parameter
VIH
Minimum High-Level
Input Voltage
VIL
VOH
Test Conditions
V
25 °C
to
-55°C
≤85
°C
≤125
°C
Unit
VOUT=0.1 V or VCC-0.1 V
IOUT≤ 20 µA
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
Maximum Low Level Input Voltage
VOUT=0.1 V or VCC-0.1 V
IOUT ≤ 20 µA
2.0
4.5
6.0
0.5
1.35
1.8
0.5
1.35
1.8
0.5
1.35
1.8
V
Minimum High-Level
Output Voltage
VIN=VIH or VIL
IOUT ≤ 20 µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
4.5
6.0
3.98
5.48
3.84
5.34
3.7
5.2
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
4.5
6.0
0.26
0.26
0.33
0.33
0.4
0.4
VIN=VIH or VIL
IOUT ≤ 6.0 mA
IOUT ≤ 7.8 mA
VOL
Guaranteed Limit
Maximum Low-Level
Output Voltage
VIN= VIL or VIH
IOUT ≤ 20 µA
VIN= VIL or VIH
IOUT ≤ 6.0 mA
IOUT ≤ 7.8 mA
V
IIN
Maximum Input
Leakage Current
VIN=VCC or GND, Pin 1 or
19
6.0
±0.1
±1.0
±1.0
µA
IOZ
Maximum ThreeState Leakage
Current
Output in High-Impedance
State
VIN= VIL or VIH
VOUT=VCC or GND,
I/O Pins
6.0
±0.5
±5.0
±10
µA
ICC
Maximum Quiescent
Supply Current
(per Package)
VIN=VCC or GND
IOUT=0µA
6.0
8.0
80
160
µA
Rev. 00
IN74HC620A
AC ELECTRICAL CHARACTERISTICS (CL=50pF,Input tr=tf=6.0 ns)
VCC
Symbol
Parameter
Guaranteed Limit
V
25 °C
to
-55°C
≤85°C
≤125°C
Unit
tPLH, tPHL
Maximum Propagation Delay, A to B , B to A
(Figures 1 and 3)
2.0
4.5
6.0
100
20
17
125
35
21
150
30
26
ns
tPLZ, tPHZ
Maximum Propagation Delay , Direction or
Output Enable to A or B (Figures 2 and 4)
2.0
4.5
6.0
150
30
26
190
38
33
225
45
38
ns
tPZL, tPZH
Maximum Propagation Delay , Direction or
Output Enable to A or B (Figures 2 and 4)
2.0
4.5
6.0
150
30
26
190
38
33
225
45
38
ns
tTLH, tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 3)
2.0
4.5
6.0
60
12
10
75
15
13
90
18
15
ns
CIN
Maximum Input Capacitance (Pin 1 or Pin 19)
-
10
10
10
pF
Maximum Three-State I/O Capacitance
(I/O in High-Impedance State)
-
15
15
15
pF
COUT
Power Dissipation Capacitance (Per Transceiver
Channel)
CPD
Used to determine the no-load dynamic power
consumption:
PD=CPDVCC2f+ICCVCC
Figure 1. Switching Waveforms
Typical @25°C,VCC=5.0 V
40
pF
Figure 2. Switching Waveforms
Rev. 00
IN74HC620A
Figure 3. Test Circuit
Figure 4. Test Circuit
EXPANDED LOGIC DIAGRAM
Rev. 00
IN74HC620A
N SUFFIX PLASTIC DIP
(MS - 001AD)
A
Dimension, mm
11
20
B
1
10
Symbol
MIN
MAX
A
24.89
26.92
B
6.1
7.11
5.33
C
F
L
C
-T- SEATING
PLANE
D
0.36
0.56
F
1.14
1.78
G
2.54
H
7.62
N
G
K
M
J
H
D
0.25 (0.010) M T
NOTES:
1. Dimensions “A”, “B” do not include mold flash or protrusions.
Maximum mold flash or protrusions 0.25 mm (0.010) per side.
J
0°
10°
K
2.92
3.81
L
7.62
8.26
M
0.2
0.36
N
0.38
D SUFFIX SOIC
(MS - 013AC)
A
20
11
H
Dimension, mm
B
1
P
10
G
R x 45
C
-TK
D
SEATING
PLANE
J
0.25 (0.010) M T C M
NOTES:
1. Dimensions A and B do not include mold flash or protrusion.
2. Maximum mold flash or protrusion 0.15 mm (0.006) per side
for A; for B ‑ 0.25 mm (0.010) per side.
F
M
Symbol
MIN
MAX
A
12.6
13
B
7.4
7.6
C
2.35
2.65
D
0.33
0.51
F
0.4
1.27
G
1.27
H
9.53
J
0°
8°
K
0.1
0.3
M
0.23
0.32
P
10
10.65
R
0.25
0.75
Rev. 00