LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC3837LT1 z Features 3 1.High transition frequency.(Typ.fT=1.5GHz) 2.Small rbb`Cc and high gain.(Typ.6ps) 3.Small NF. 1 2 COLLECTOR 3 1 BASE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-base voltage Collector Current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Value 30 18 3 50 0.2 150 -55~+150 Unit V V V mA W °C °C 2 EMITTER DEVICE MARKING L2SC3837LT1=AP ELECTRICAL CHARACTERISTICS(TA = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Collector-base time constant Noise factor Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob rbb`Cc NF Min. 30 18 3 56 600 - Typ 1500 0.9 6 4.5 Max. 0.5 0.5 0.5 180 1.5 13 - Unit V V V µA µA V MHz pF ps dB Conditions IC=10µA IC=1mA IE=10µA VCB=10V VEB= 2 V IC/IB=20mA/4mA VCE/IC=10V/10mA VCB=10V, IC=10mA, f=200MHz VCB=10V, IE=0A, f=1MHz VCB=10V, IC=10mA, f=31.8MHz VCE=12V, IC=2mA, f=200MHz,Rg=50Ω L2SC3837LT1 –1/2 LESHAN RADIO COMPANY, LTD. L2SC3837LT1 SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 DIM B S G C D H K J MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 A B C D G H J K L S V INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm L2SC3837LT1 –2/2