LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier NPN Transistor L2SC3838QT1 L6&3838QT1 3 1 2 )HDWXUHV +LJKWUDQVLWLRQIUHTXHQF\7\SI7 3.2*+] 6PDOOUEE¶⋅&FDQGKLJKJDLQ7\SSV 6PDOO1) SC-59 3 COLLECTOR Absolute maximum ratings (Ta=25 oC) Symbol VCBO VCEO Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current VEBO IC Collector power dissipation PC Junction temperature Storage temperature Tj Tstg Limits 20 Unit V 11 3 50 0.2 V V mA 1 BASE 2 EMITTER W 150 - 55~+150 o C C o Device Marking L2SC3838QT1=R25 Electrical characteristics (Ta=25 oC) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Parameter BVCBO BVCEO 20 11 - - Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage BVEBO 3 - - - V V V - 0.5 uA - - 0.5 uA hFE 120 - V - fT 1.4 3.2 0.5 270 - Cob rbb'·Cc - 0.8 4 DC current transfer ratio Transition frequency Output capacitance Collector-base time constant Noise factor ICBO IEBO VCE(sat) NF - 3.5 1.5 12 - GHz pF Conditions IC = 10 µA IC = 1mA IE = 10 µA VCB = 10V,IE=0 VEB = 2V,IC=0 IC/IB = 10mA/5mA VCE/IC = 10V/5mA VCB = 10V , IC = 10mA , f = 500MHz VCB = 10V , IE = 0A , f = 1MHz ps VCB = 10V , IC = 10mA , f = 31.8MHz dB VCE = 6V , IC = 2mA , f = 500MHz , Rg = 50Ω L2SC3838QT1-1/2 LESHAN RADIO COMPANY, LTD. L2SC3838QT1 SC-59 J C K H A L 3 S 2 B 1 D G DIN A B C D G H J K L S MILLIMETERS INCHES MIN MAX MIN MAX 2.70 1.3 1.00 0.35 1.70 0.0130 0.1 0.20 1.25 2.50 3.10 1.70 1.30 0.50 2.10 0.100 0.26 0.60 1.65 3.00 0.1063 0.0512 0.0394 0.0138 0.0670 0.0005 0.0040 0.0079 0.0493 0.0985 0.1220 0.0669 0.0511 0.0196 0.0826 0.00040 0.0102 0.0236 0.0649 0.1181 L2SC3838QT1-2/2