LRC L2SC3838QT1

LESHAN RADIO COMPANY, LTD.
High-Frequency Amplifier
NPN Transistor
L2SC3838QT1
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1
2
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SC-59
3
COLLECTOR
Absolute maximum ratings (Ta=25 oC)
Symbol
VCBO
VCEO
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
VEBO
IC
Collector power dissipation
PC
Junction temperature
Storage temperature
Tj
Tstg
Limits
20
Unit
V
11
3
50
0.2
V
V
mA
1
BASE
2
EMITTER
W
150
- 55~+150
o
C
C
o
Device Marking
L2SC3838QT1=R25
Electrical characteristics (Ta=25 oC)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Parameter
BVCBO
BVCEO
20
11
-
-
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
BVEBO
3
-
-
-
V
V
V
-
0.5
uA
-
-
0.5
uA
hFE
120
-
V
-
fT
1.4
3.2
0.5
270
-
Cob
rbb'·Cc
-
0.8
4
DC current transfer ratio
Transition frequency
Output capacitance
Collector-base time constant
Noise factor
ICBO
IEBO
VCE(sat)
NF
-
3.5
1.5
12
-
GHz
pF
Conditions
IC = 10 µA
IC = 1mA
IE = 10 µA
VCB = 10V,IE=0
VEB = 2V,IC=0
IC/IB = 10mA/5mA
VCE/IC = 10V/5mA
VCB = 10V , IC = 10mA , f = 500MHz
VCB = 10V , IE = 0A , f = 1MHz
ps
VCB = 10V , IC = 10mA , f = 31.8MHz
dB
VCE = 6V , IC = 2mA , f = 500MHz , Rg = 50Ω
L2SC3838QT1-1/2
LESHAN RADIO COMPANY, LTD.
L2SC3838QT1
SC-59
J
C
K
H
A
L
3
S
2
B
1
D
G
DIN
A
B
C
D
G
H
J
K
L
S
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
2.70
1.3
1.00
0.35
1.70
0.0130
0.1
0.20
1.25
2.50
3.10
1.70
1.30
0.50
2.10
0.100
0.26
0.60
1.65
3.00
0.1063
0.0512
0.0394
0.0138
0.0670
0.0005
0.0040
0.0079
0.0493
0.0985
0.1220
0.0669
0.0511
0.0196
0.0826
0.00040
0.0102
0.0236
0.0649
0.1181
L2SC3838QT1-2/2