LESHAN RADIO COMPANY, LTD. Silicon Pin Diode LMVL3401T1 This device is designed primarily for VHF band switching applications but is also suitable for use in general–purpose switching circuits. Supplied in a Surface Mount package. • Rugged PIN Structure Coupled with Wirebond Construction for Optimum Reliability • Low Capacitance – 0.7 pF Typ at VR = 20 Vdc • Very Low Series Resistance at 100 MHz – 0.34 Ohms (Typ) SILICON PIN SWITCHING DIODE 1 @ IF = 10 mAdc • Pb-Free package is available 2 SOD– 323 DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LMVL3401T1 4D SOD-323 3000/Tape&Reel LMVL3401T1G 4D SOD-323 (Pb-Free) 3000/Tape&Reel 1 CATHODE 2 ANODE MAXIMUM RATINGS Symbol VR IF Rating Continuous Reverse Voltage Peak Forward Current Value 20 20 Unit Vdc mAdc THERMAL CHARACTERISTICS Symbol Characteristic Max Unit PD Total Device Dissipation FR–5 Board,* TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature 200 mW 1.57 635 150 mW/°C °C/W °C RθJA TJ, Tstg *FR–4 Minimum Pad ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse BreakdownVoltage (IR = 10 µAdc) Diode Capacitance (VR = 20 Vdc) Series Resistance (IF = 10 mAdc, f =100MHz) Reverse Leakage Current (VR = 25 Vdc) Symbol V(BR)R Min 35 Typ — Max — Unit Vdc CT — — 1.0 pF RS — – 0.7 Ω IR — — 0.1 µAdc LMVL3401T1-1/3 LESHAN RADIO COMPANY, LTD. LMVL3401T1 RS, SERIES RESISTANCE (Ω) I F , FORWARD CURRENT (mA) TYPICAL CHARACTERISTICS VF, FORWARD VOLTAGE (VOLTS) Figure 1. Series Resistance Figure 2. Forward Voltage I R, REVERSE CURRENT (µ A) CT, DIODE CAPACITANCE (pF) I F, FORWARD CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) TA, AMBIENT TEMPERATURE (°C) Figure 3. Diode Capacitance Figure 4. Leakage Current LMVL3401T1-2/3 LESHAN RADIO COMPANY, LTD. LMVL3401T1 SOD–323 NOTES: 1.CONTROLLING DIMENSION MILLIME TERS 2.LEAD THICKNESS SPECIFIEDPERL/FDRAWINGWITH SOLDERPLATING LMVL3401T1-3/3