Silicon Schottky Diode LBAT60BT1 High current rectifier Schottky diode with very low VF drop (typ. 0.24 V at IF = 10mA) ●For power supply applications ●For clamping and protection in low voltage applications ● For detection and step-up-conversion ● SOD323 Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Surge forward current, (t <10ms) Total power dissipation TS < 28°C Junction temperature Storage temperature Symbol VR IF IFSM Value 10 3 5 Unit V PTOT 1350 mW Tj Tstg 150 -55–150 °C A Driver Marking LBAT60BT1=5 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Reverse current VR = 5 V VR = 8 V VR = 5 V, TA = 80 °C VR = 8 V, TA = 80 °C Forward voltage IF = 10 mA IF = 100 mA IF = 500 mA IF = 1000 mA AC Characteristics Diode capacitance VR = 5 V, f = 1 MHz Symbol min. Values typ. max. – – – – 5 10 100 410 15 25 800 1500 0.2 0.26 0.32 0.36 0.24 0.32 0.4 0.48 0.3 0.38 0.5 0.6 12 25 30 IR µA VF CT Unit V Pf LBAT60BT1–1/4 LBAT60BT1 ● Electrical characteristic curves Reverse current IR = (VR) TA = Parameter Forward current IF = (VF) TA = Parameter Forward current IF = f (TS) Permissible Puls Load RthJS = f (tp) LBAT60BT1–2/4 LBAT60BT1 Permissible Pulse Load IFmax/ IFDC = f(tp) LBAT60BT1–3/4 LBAT60BT1 SOD–323 NOTES: 1.CONTROLLING DIMENSION MILLIME TERS 2.LEAD THICKNESS SPECIFIEDPERL/FDRAWINGWITH SOLDERPLATING LBAT60BT1–4/4