LRC LP2301LT1G

LESHAN RADIO COMPANY, LTD.
20V P-Channel Enhancement-Mode MOSFET
LP2301LT1G
VDS= -20V
RDS(ON), [email protected], [email protected] = 100 mΩ
RDS(ON), [email protected], [email protected] = 150 mΩ
3
Features
Advanced trench process technology
1
High Density Cell Design For Ultra Low On-Resistance
2
Fully Characterized Avalanche Voltage and Current
SOT– 23 (TO–236AB)
Improved Shoot-Through FOM
▼ Simple Drive Requirement
3
▼ Small Package Outline
▼ Surface Mount Device
▼ Pb-Free package is available
G
D
1
2
S
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Symbol
Limit
Drain-Source Voltage
VDS
-20
Gate-Source Voltage
VGS
±8
Continuous Drain Current
ID
-2.3
Pulsed Drain Current 1)
IDM
-8
Parameter
Maximum Power Dissipation
TA = 25oC
PD
o
TA = 75 C
V
A
0.9
W
0.57
TJ, Tstg
Operating Junction and Storage Temperature Range
2)
RqJA
o
-55 to 150
RqJC
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance (PCB mounted)
Unit
o
140
Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation
2
2. 1-in
2oz Cu PCB board
3. Guaranteed by design; not subject to production testing
1/3
C
C/W
LESHAN RADIO COMPANY, LTD.
LP2301LT1G
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = -250uA
-20
-
-
V
Drain-Source On-State Resistance
RDS(on)
VGS = -4.5V, ID = -2.8A
69
100
mΩ
Drain-Source On-State Resistance
RDS(on)
VGS = -2.5V, ID = -2.0A
83
150
mΩ
Gate Threshold Voltage
VGS(th)
VDS =VGS, ID = -250uA
-0.95
V
Zero Gate Voltage Drain Current
IDSS
VDS = -9.6V, VGS = 0V
-1
uA
Gate Body Leakage
IGSS
VGS = ±8V, VDS = 0V
±100
nA
Gate Resistance
Rg
Forward Transconductance
gfs
Static
Dynamic
-0.45
Ω
VDS = -5V, ID = -4.0A
6.5
S
3)
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = -6V, ID = -2.8A
VGS = -4.5V
15.23
nC
5.49
2.74
17.28
VDD = -6V, RL = 6Ω
ΙD = −1Α, VGEN = -4.5V
RG = 6Ω
3.73
ns
36.05
6.19
882.51
VDS = -6V, VGS = 0V
f = 1.0 MHz
pF
145.54
97.26
Source-Drain Diode
Max. Diode Forward Current
IS
Diode Forward Voltage
VSD
IS = -0.75A, VGS = 0V
-0.8
-2.4
A
-1.2
V
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
2/3
LESHAN RADIO COMPANY, LTD.
LP2301LT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
A
L
3
1
V
2
A
B
C
D
G
H
J
G
C
D
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
INCHES
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0034
0.0140
0.0350
0.0830
0.0177
0.0070
0.0285
0.0401
0.1039
0.0236
DIM
B S
H
K
J
K
L
S
V
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.35
0.89
2.10
0.45
0.177
0.69
1.02
2.64
0.60
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
3/3
LESHAN RADIO COMPANY, LTD.
EMBOSSED TAPE AND REEL DATA
FOR DISCRETES
T Max
Outside Dimension
Measured at Edge
13.0mm ± 0.5mm
1.5mm Min
(.512 ±.002’’)
(.06’’)
A
50mm Min
(1.969’’)
20.2mm Min
(.795’’)
Full Radius
G
Inside Dimension
Measured Near Hub
Size
8 mm
A Max
G
T Max
330mm
8.4mm+1.5mm, -0.0
14.4mm
(12.992’’)
(.33’’+.059’’, -0.00)
(.56’’)
Reel Dimensions
Metric Dimensions Govern –– English are in parentheses for reference only
Storage Conditions
Temperature: 5 to 40 Deg.C (20 to 30 Deg. C is preferred)
Humidity: 30 to 80 RH (40 to 60 is preferred )
Recommended Period: One year after manufacturing
(This recommended period is for the soldering condition only. The
characteristics and reliabilities of the products are not restricted to
this limitation)
LESHAN RADIO COMPANY, LTD.
Shipment Specification
CPN
LABEL
LABEL
LABEL
Dim(Unit:mm)
195mm*195mm*150mm
10 Reel
3000PCS/Reel
8000PCS/Reel (SOT-723,SOD-723)
10Reel/Inner Box
30KPCS/Inner Box
80KPCS/Inner Box (SOT-723,SOD-723)
Dim(Unit:mm)
LABEL
460mm*400mm*420mm
MARK
乐山无线电股份有限公司
Leshan Radio Company,Ltd.
12 Inner Box/Carton
360KPCS/Carton
960KPCS/Carton (SOT-723,SOD-723)