LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP2301LT1G VDS= -20V RDS(ON), [email protected], [email protected] = 100 mΩ RDS(ON), [email protected], [email protected] = 150 mΩ 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance 2 Fully Characterized Avalanche Voltage and Current SOT– 23 (TO–236AB) Improved Shoot-Through FOM ▼ Simple Drive Requirement 3 ▼ Small Package Outline ▼ Surface Mount Device ▼ Pb-Free package is available G D 1 2 S Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Symbol Limit Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current ID -2.3 Pulsed Drain Current 1) IDM -8 Parameter Maximum Power Dissipation TA = 25oC PD o TA = 75 C V A 0.9 W 0.57 TJ, Tstg Operating Junction and Storage Temperature Range 2) RqJA o -55 to 150 RqJC Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance (PCB mounted) Unit o 140 Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation 2 2. 1-in 2oz Cu PCB board 3. Guaranteed by design; not subject to production testing 1/3 C C/W LESHAN RADIO COMPANY, LTD. LP2301LT1G ELECTRICAL CHARACTERISTICS Parameter Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250uA -20 - - V Drain-Source On-State Resistance RDS(on) VGS = -4.5V, ID = -2.8A 69 100 mΩ Drain-Source On-State Resistance RDS(on) VGS = -2.5V, ID = -2.0A 83 150 mΩ Gate Threshold Voltage VGS(th) VDS =VGS, ID = -250uA -0.95 V Zero Gate Voltage Drain Current IDSS VDS = -9.6V, VGS = 0V -1 uA Gate Body Leakage IGSS VGS = ±8V, VDS = 0V ±100 nA Gate Resistance Rg Forward Transconductance gfs Static Dynamic -0.45 Ω VDS = -5V, ID = -4.0A 6.5 S 3) Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = -6V, ID = -2.8A VGS = -4.5V 15.23 nC 5.49 2.74 17.28 VDD = -6V, RL = 6Ω ΙD = −1Α, VGEN = -4.5V RG = 6Ω 3.73 ns 36.05 6.19 882.51 VDS = -6V, VGS = 0V f = 1.0 MHz pF 145.54 97.26 Source-Drain Diode Max. Diode Forward Current IS Diode Forward Voltage VSD IS = -0.75A, VGS = 0V -0.8 -2.4 A -1.2 V Note: Pulse test: pulse width <= 300us, duty cycle<= 2% 2/3 LESHAN RADIO COMPANY, LTD. LP2301LT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 A B C D G H J G C D MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0034 0.0140 0.0350 0.0830 0.0177 0.0070 0.0285 0.0401 0.1039 0.0236 DIM B S H K J K L S V MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.35 0.89 2.10 0.45 0.177 0.69 1.02 2.64 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm 3/3 LESHAN RADIO COMPANY, LTD. EMBOSSED TAPE AND REEL DATA FOR DISCRETES T Max Outside Dimension Measured at Edge 13.0mm ± 0.5mm 1.5mm Min (.512 ±.002’’) (.06’’) A 50mm Min (1.969’’) 20.2mm Min (.795’’) Full Radius G Inside Dimension Measured Near Hub Size 8 mm A Max G T Max 330mm 8.4mm+1.5mm, -0.0 14.4mm (12.992’’) (.33’’+.059’’, -0.00) (.56’’) Reel Dimensions Metric Dimensions Govern –– English are in parentheses for reference only Storage Conditions Temperature: 5 to 40 Deg.C (20 to 30 Deg. C is preferred) Humidity: 30 to 80 RH (40 to 60 is preferred ) Recommended Period: One year after manufacturing (This recommended period is for the soldering condition only. The characteristics and reliabilities of the products are not restricted to this limitation) LESHAN RADIO COMPANY, LTD. Shipment Specification CPN LABEL LABEL LABEL Dim(Unit:mm) 195mm*195mm*150mm 10 Reel 3000PCS/Reel 8000PCS/Reel (SOT-723,SOD-723) 10Reel/Inner Box 30KPCS/Inner Box 80KPCS/Inner Box (SOT-723,SOD-723) Dim(Unit:mm) LABEL 460mm*400mm*420mm MARK 乐山无线电股份有限公司 Leshan Radio Company,Ltd. 12 Inner Box/Carton 360KPCS/Carton 960KPCS/Carton (SOT-723,SOD-723)