ZXMN2A01E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 20V; RDS(ON) = 0.12 ID = 3.1A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23-6 package APPLICATIONS • DC - DC Converters • Power management functions • Disconnect switches • Motor control PINOUT ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMN2A01E6TA 7” 8mm 3000 units ZXMN2A01E6TC 13” 8mm 10000 units DEVICE MARKING Top View • 2A1 ISSUE 3 - FEBRUARY 2006 1 ZXMN2A01E6 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-Source Voltage V DSS LIMIT Gate Source Voltage V GS Continuous Drain Current V GS =10V; T A =25°C (b) V GS =10V; T A =70°C (b) V GS =10V; T A =25°C (a) Pulsed Drain Current (c) ID I DM 11 A Continuous Source Current (Body Diode) (b) IS 2.4 A Pulsed Source Current (Body Diode) (c) I SM 11 A Power Dissipation at T A =25°C (a) Linear Derating Factor PD 1.1 8.8 W mW/°C Power Dissipation at T A =25°C (b) Linear Derating Factor PD 1.7 13.6 W mW/°C Operating and Storage Temperature Range T j :T stg -55 to +150 °C VALUE UNIT 20 UNIT V 12 V 3.1 2.5 2.5 A THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a) R θJA 113 °C/W Junction to Ambient (b) R θJA 70 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t⭐10 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. ISSUE 3 - FEBRUARY 2006 2 ZXMN2A01E6 CHARACTERISTICS ISSUE 3 - FEBRUARY 2006 3 ZXMN2A01E6 ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage V (BR)DSS 20 Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) TYP. MAX. UNIT CONDITIONS. STATIC I D =250µA, V GS =0V 1 µA V DS =20V, V GS =0V 100 nA 0.7 V 0.12 Ω 0.225 Ω Static Drain-Source On-State Resistance R DS(on) (1) Forward Transconductance (1)(3) V g fs 6.1 S Input Capacitance C iss 303 pF Output Capacitance C oss 59 pF Reverse Transfer Capacitance C rss 30 pF V GS =⫾12V, V DS =0V I =250µA, V DS = V GS D V GS =4.5V, V GS =2.5V, I D =4A I D =1.5A V DS =10V,I D =4A DYNAMIC (3) V DS =15 V, V GS =0V, f=1MHz SWITCHING(2) (3) Turn-On Delay Time t d(on) 2.49 ns Rise Time tr 5.21 ns Turn-Off Delay Time t d(off) 7.47 ns Fall Time tf 4.62 ns Total Gate Charge Qg 3.0 nC Gate-Source Charge Q gs 0.8 nC Gate-Drain Charge Q gd 1.0 nC Diode Forward Voltage (1) V SD 0.9 Reverse Recovery Time (3) t rr Reverse Recovery Charge (3) Q rr V DD =10V, I D =4A R G =6.0Ω, V GS =5V V DS =10V,V GS =4.5V, I D =4A SOURCE-DRAIN DIODE 0.95 V T J =25°C, I S =3.2A, V GS =0V 23 ns T J =25°C, I F = 4A, di/dt= 100A/µs 5.65 nC NOTES: (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 3 - FEBRUARY 2006 4 ZXMN2A01E6 TYPICAL CHARACTERISTICS ISSUE 3 - FEBRUARY 2006 5 ZXMN2A01E6 VGS = 0V f = 1MHz 400 VGS Gate-Source Voltage (V) C Capacitance (pF) TYPICAL CHARACTERISTICS CISS COSS 200 0 0.1 CRSS 1 10 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage 4.5 4.0 ID = 4A 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 VDS = 10V 1 2 3 4 Q - Charge (nC) Gate-Source Voltage v Gate Charge ISSUE 3 - FEBRUARY 2006 6 ZXMN2A01E6 PACKAGE OUTLINE PAD LAYOUT DETAILS e b L 2 E1 E DATUM A a e1 D C A A2 A1 CONTROLLING DIMENSIONS IN MILLIMETERS APPROX CONVERSIONS INCHES PACKAGE DIMENSIONS Millimeters Inches DIM Millimeters Inches DIM Min Max Min Max Min Max Min Max A 0.90 1.45 0.35 0.057 E 2.60 3.00 0.102 0.118 A1 0.00 0.15 0 0.006 E1 1.50 1.75 0.059 0.069 A2 0.90 1.30 0.035 0.051 L 0.10 0.60 0.004 0.002 b 0.35 0.50 0.014 0.019 e 0.95 REF 0.037 REF C 0.09 0.20 0.0035 0.008 e1 1.90 REF 0.074 REF D 2.80 3.00 0.110 0.118 L 0° 10° 0° 10° © Zetex Semiconductors plc 2006 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 3 - FEBRUARY 2006 7