10.0-40.0 GHz GaAs MMIC Distributed Amplifier May 2005 - Rev 05-May-05 22DSBA0423 Features Chip Device Layout tio n Ultra Wide Band Driver Amplifier Self Biased Architecture 17.0 dB Small Signal Gain 5.0 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) pr od Mimix Broadband’s 10.0-40.0 GHz GaAs MMIC distributed amplifier has a small signal gain of 17.0 dB with a noise figure of 5.0 dB. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for microwave, millimeter-wave, wideband military, and fiber optic applications. uc General Description +6.0 VDC 175 mA +17 dBm -65 to +165 OC 2 -55 to MTTF Table 2 MTTF Table (2) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25 oC) Pr e- Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness (∆S21) Reverse Isolation (S12) Noise Figure (NF) Output Power for 1 dB Compression Point 1 Drain Bias Voltage (Vd) Supply Current (Id) (Vd=5.0V) Units GHz dB dB dB dB dB dB dBm VDC mA Min. 10.0 - Typ. 7.0 12.0 17.0 +/-2.5 30.0 5.0 TBD +5.0 115 Max. 40.0 +5.5 145 (1) Measured using constant current. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 5 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 10.0-40.0 GHz GaAs MMIC Distributed Amplifier May 2005 - Rev 05-May-05 22DSBA0423 Distributed Amplifier Measurements S21 25 S12 0 -10 15 -15 10 -20 5 -25 0 -30 -5 -35 -10 -40 -45 -15 -50 -20 -55 0 5 10 15 20 25 30 Frequency (GHz) 35 40 45 50 S11 0 0 5 10 15 20 25 30 Frequency (GHz) 35 40 45 50 35 40 45 50 S22 od 0 -60 uc -25 tio n -5 20 -5 -5 -10 -10 -15 -20 -25 5 10 15 20 25 30 Frequency (GHz) 35 e- 0 pr -15 40 45 50 -20 -25 0 5 10 15 20 25 30 Frequency (GHz) NF (dB) vs. Frequency (GHz) 10 9.5 9 Pr 8.5 8 7.5 7 6.5 NF (dB) 6 5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Frequency (GHz) Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 2 of 5 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 10.0-40.0 GHz GaAs MMIC Distributed Amplifier May 2005 - Rev 05-May-05 22DSBA0423 Mechanical Drawing 1.250 (0.049) 2 1 1.102 (0.043) uc tio n 1.070 (0.042) 3 0.0 1.000 (0.039) 0.820 (0.032) od 0.0 (Note: Engineering designator is 22DSBA0423) pr Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold All Bond Pads are 0.100 x 0.100 (0.004 x 0.004). Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 0.775 mg. Bond Pad #1 (RF In) 1 2 Bond Pad #3 (Vd) RF Out Bypass Capacitors - See App Note [2] Pr RF In e- Bias Arrangement Bond Pad #2 (RF Out) 3 Vd Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 3 of 5 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 10.0-40.0 GHz GaAs MMIC Distributed Amplifier May 2005 - Rev 05-May-05 22DSBA0423 App Note [1] Biasing - As shown in the bonding diagram, this device operates using a self-biased architecture and only requires one drain bias. Bias is nominally Vd=5V, I=155mA. MTTF Table (TBD) tio n App Note [2] Bias Arrangement - Each DC pad (Vd) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended. These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry. Channel Temperature Rth MTTF Hours 55 deg Celsius deg Celsius C/W E+ 75 deg Celsius deg Celsius C/W 95 deg Celsius deg Celsius C/W uc Backplate Temperature FITs E+ E+ E+ E+ E+ Pr e- pr od Bias Conditions: Vd=5V, I=115 mA Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 4 of 5 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 10.0-40.0 GHz GaAs MMIC Distributed Amplifier May 2005 - Rev 05-May-05 22DSBA0423 Handling and Assembly Information CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: tio n Do not ingest. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. uc Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. od ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Pr e- pr Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001 2 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold Germanium should be avoided). The work station temperature should be 310 C +- 10 C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 5 of 5 Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.