MIMIX CMM0014-BD

2.0-22.0 GHz GaAs MMIC
Power Amplifier
CMM0014-BD
April 2007 - Rev 26-Apr-07
Features
Chip Device Layout
Ultra Wide Band Power Amplifier
Compact Size/Self Bias Architecture
11.5 dB Small Signal Gain
+24.0 dBm P1dB Compression Point
+35.0 dBm Third Order Intercept
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Mimix Broadband’s distributed 2.0-22.0 GHz GaAs
MMIC power amplifier has a small signal gain of 11.5
dB with a +24.0 dBm P1dB output compression point.
This MMIC uses Mimix Broadband’s 0.3 µm GaAs
PHEMT device model technology, and is based upon
electron beam lithography to ensure high
repeatability and uniformity. The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die
attach process. This device is well suited for Test
Instrumentation, Military, Space, Microwave
Point-to-Point Radio, SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+9.0 VDC
350 mA
+20.0 dBm
-65 to +165 OC
-55 to MTTF Graph1
MTTF Graph1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Output Power for 1dB Compression (P1dB)
Output Third Order Intermods (OIP3)
Saturated Output Power (Psat)
Drain Bias Voltage (Vd)
Supply Current (Id) (Vd=8.0V Typical)
Units
GHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
VDC
mA
Min.
2.0
-
Typ.
15.0
10.0
11.5
+/-0.5
40.0
+24.0
+35.0
+25.0
+8.0
300
Max.
22.0
+8.5
340
100% on-wafer DC testing and 100% RF wafer qualification. Wafer qualification includes sample testing from each quadrant
with an 80% pass rate required.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 6
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
2.0-22.0 GHz GaAs MMIC
Power Amplifier
CMM0014-BD
April 2007 - Rev 26-Apr-07
Power Amplifier Measurements
CMM0014-BD Vd=8.0 V, Id=300 mA
CMM0014-BD Vd=8.0 V, Id=300 mA
0
17
16
-10
15
Reverse Isolation (dB)
Gain (dB)
14
13
12
11
10
-20
-30
-40
-50
9
-60
8
-70
7
1.0
3.0
5.0
7.0
9.0
1.0
11.0 13.0 15.0 17.0 19.0 21.0 23.0 25.0 27.0
3.0
5.0
7.0
9.0
11.0 13.0 15.0 17.0 19.0 21.0 23.0 25.0 27.0
Frequency (GHz)
Frequency (GHz)
CMM0014-BD Vd=8.0 V, Id=300 mA
CMM0014-BD Vd=8.0 V, Id=300 mA
0
0
-5
-5
Output Return Loss (dB)
Input Return Loss (dB)
-10
-15
-20
-25
-30
-35
-10
-15
-20
-40
-25
-45
1.0
3.0
5.0
7.0
9.0
1.0
11.0 13.0 15.0 17.0 19.0 21.0 23.0 25.0 27.0
3.0
5.0
7.0
9.0
11.0 13.0 15.0 17.0 19.0 21.0 23.0 25.0 27.0
Frequency (GHz)
Frequency (GHz)
CMM0014-BD Vd=8.0V, Id=300 mA
CMM0014-BD Vd=8.0V, Id=300 mA
30
9
29
8
28
Output Power P1dB (dBm)
10
Noise Figure (dB)
7
6
5
4
3
2
27
26
25
24
23
22
1
21
0
2.0
4.0
6.0
8.0
10.0
12.0
Frequency (GHz)
14.0
16.0
18.0
20.0
20
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
Frequency (GHz)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 6
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
20.0
2.0-22.0 GHz GaAs MMIC
Power Amplifier
CMM0014-BD
April 2007 - Rev 26-Apr-07
Power Amplifier Measurements (cont.)
CMM0014-BD Vd=8.0V, Id=300 mA
40
39
Third Order Intercept (dBm)
38
37
36
35
34
33
32
31
30
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
Frequency (GHz)
CMM0014-BD Vd=8.0V, Id=300 mA
60
58
Second Order Intercept (dBm)
56
54
52
50
48
46
44
42
40
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
Frequency (GHz)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 3 of 6
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
2.0-22.0 GHz GaAs MMIC
Power Amplifier
CMM0014-BD
April 2007 - Rev 26-Apr-07
Mechanical Drawing
2.234
(0.088)
1.140
(0.045)
0.352
(0.014)
2
1.034
(0.041)
3
1.614
(0.024)
1
6
5
4
0.0
2.149 2.340
(0.085) (0.092)
2.045 2.249
(0.081) (0.089)
0.0
(Note: Engineering designator is M380)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008)
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.65 mg.
Bond Pad #1 (RF In)
Bond Pad #2 (Vd)
Bias Arrangement
Bond Pad #3 (RF Out)
Bond Pad #4 (Rs-1.2 )
Vd
Bond Pad #5 (Rs-2.1 )
Bond Pad #6 (Rs-3.3 )
Bypass Capacitors - See App Note [2]
2
3
RF In
RF Out
1
6
5
4
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 6
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
2.0-22.0 GHz GaAs MMIC
Power Amplifier
CMM0014-BD
April 2007 - Rev 26-Apr-07
App Note [1] Biasing - As shown in the bonding diagram, this device operates using a self-biased architecture and only requires one drain
bias. Bias is nominally Vd=8V, Id=300 mA. For additional assistance in setting current via source resistor, see source resistance table below.
App Note [2] Bias Arrangement - Each DC pad (Vd) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible.
Additional DC bypass capacitance (~0.01 uF) is also recommended. Additionally, to achieve the required broadband decoupling network a
high-Q Drain bias inductor with high-Q bypass capacitor is needed. The proper network is necessary in order to bring Drain bias into the
device with minimal impact on RF performance. The high-Q inductor is typically an air coil that can be purchased from an air coil
manufacturer (Microwave Components or Piconics for example). The air coil needs to have minimum current handling capability, thus
planned operating current needs to be defined and considered before defining actual air coil to be used. Mimix recommends 1.4 mil
diameter gold wire and 4 turns as a starting point and may need to be optimized based on the actual application. Self-resonance of the bias
inductor causes degradation in performance at both the low and high ends of the band. The self resonance is sensitive to spacing between
turns and number of turns used. For example, the more turns in the Drain bias inductor the lower the self-resonant frequency of the inductor
creating high end RF performance degradation. The opposite is true for a smaller number of turns.
CMM0014 - Source Resistance Table
Left
3.3
0
1
0
1
0
1
0
1
Center
2.1
0
0
1
1
0
0
1
1
Corner
1.2
0
0
0
0
1
1
1
1
Net R
Infinity
3.30
2.10
1.28
1.20
0.88
0.76
0.62
MTTF Graphs
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
CMM0014-BD Vd=8.0 V, Id=280 mA
1.00E+01
1.0E+08
1.00E+00
FITS
MTTF (hours)
CMM0014-BD Vd=8.0 V, Id=280 mA
1.0E+09
1.0E+07
1.00E-01
1.00E-02
1.0E+06
1.0E+05
1.00E-03
55
65
75
85
95
105
115
55
125
65
75
85
95
105
115
125
Baseplate Temperature (deg C)
Backplate Temperature (deg C)
CMM0014-BD Vd=8.0 V, Id=280 mA
170
160
Tch (deg C)
150
140
130
120
110
100
90
55
65
75
85
95
105
115
125
Backplate Temperature (deg C)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 6
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
2.0-22.0 GHz GaAs MMIC
Power Amplifier
CMM0014-BD
April 2007 - Rev 26-Apr-07
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body
and the environment. For safety, observe the following procedures:
Do not ingest.
Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this product. This product must be
discarded in accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or
systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1)
Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b)
support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in
the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component
of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic
containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices
need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to
enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface
should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or
DM6030HK-Pt cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any
on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional information
please see the Mimix "Epoxy Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless
gold-tin (AuSn) preform, approximately 0.001 thick, placed between the die and the attachment surface should be used. A die
bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a
nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 ºC
(Note: Gold Germanium should be avoided). The work station temperature should be 310 ºC +/- 10 ºC. Exposure to these
extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive
thermal shock. Avoidance of air bridges and force impact are critical during placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold
bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon
with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are
acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended
though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and
ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All
bonds should be as short as possible.
Part Number for Ordering
CMM0014-BD-000V
PB-CMM0014-BD-0000
Description
RoHS compliant die packed in vacuum release gel packs
CMM0014-BD evaluation module
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 6 of 6
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.