MIMIX XM1004-BD-EV1

20.0-38.0 GHz GaAs MMIC
Balanced Mixer
February 2007 - Rev 26-Feb-07
M1004-BD
Features
Fundamental Balanced Mixer
8.0 dB Conversion Loss
+25.0 dBm Input Third Order Intercept (IIP3)
35.0 dB LO to RF Isolation
100% On-Wafer RF Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Chip Device Layout
XM1004-BD
General Description
Mimix Broadband’s 20.0-38.0 GHz GaAs MMIC
fundamental balanced mixer has been optimized for use
as an up-converter. The device has a conversion loss of
8.0 dB with a +25.0 dBm input third order intercept point.
IF and IF mixer inputs are provided through an external
180 degree hybrid. This MMIC uses Mimix Broadband’s
0.15 µm GaAs PHEMT device model technology, and is
based upon electron beam lithography to ensure high
repeatability and uniformity. The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow either
a conductive epoxy or eutectic solder die attach process.
This device is well suited for Millimeter-wave
Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
Absolute Maximum Ratings
Gate Bias Voltage (Vg)
Input Power (IF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
+0.3 VDC
+20.0 dBm
-65 to +165 OC
-55 to +125 OC
Electrical Characteristics (Ambient Temperature T = 25o C)
Parameter
Frequency Range (RF) Upper Side Band
Frequency Range (RF) Lower Side Band
Frequency Range (LO)
Frequency Range (IF)
RF Return Loss (S11)
IF Return Loss (S22)
LO Return Loss (S33)
Conversion Loss (S21)
LO Input Drive (PLO)
Isolation LO/RF
Isolation LO/IF
Isolation RF/IF
Input Third Order Intercept (IIP3)
Gate Bias Voltage (Vg1)
Units
GHz
GHz
GHZ
GHz
dB
dB
dB
dB
dBm
dB
dB
dB
dBm
VDC
Min.
20.0
20.0
15.0
DC
-1.2
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Typ.
10.0
10.0
10.0
8.0
+12.0
35.0
TBD
TBD
+25.0
-0.5
Max.
38.0
38.0
43.0
3.0
+0.1
Page 1 of 5
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
20.0-38.0 GHz GaAs MMIC
Balanced Mixer
February 2007 - Rev 26-Feb-07
M1004-BD
Mixer Measurements
XM1004-BD: LO to RF Isolation (dB) vs LO Freq (GHz)
LO = +12 dBm, Vg = -0.5 V
XM1004-BD: Conversion Gain (dB) vs RF Freq (GHz)
IF = 1.8 GHz, IF Pin = -10 dBm, LO = +12 dBm
0
0
-2
-5
-10
-6
LO to RF Isolation (dB)
Conversion Gain (dB)
-4
-8
-10
-12
RF at USB
-14
-16
-15
-20
-25
-30
-35
-40
RF at LSB
-18
-45
-20
-50
18
20
22
24
26
28
30
32
34
36
38
18
40
20
22
24
26
30
32
34
36
38
40
XM1004-BD: IIP3 (dBm) vs. RF LSB (GHz)
IF = 2 GHz at -13 dBm per Tone
XM1004-BD: IIP3 (dBm) vs. RF USB (GHz)
IF = 2 GHz at -13 dBm per Tone
30
30
25
25
20
20
IIP3 (dBm)
IIP3 (dBm)
28
LO (GHz)
RF (GHz)
15
10
15
10
LO = 9 dBm
LO = 9 dBm
LO = 12 dBm
5
5
LO = 12 dBm
LO = 15 dBm
LO = 15 dBm
0
0
18
20
22
24
26
28
30
RF USB (GHz)
32
34
36
38
40
18
20
22
24
26
28
30
32
34
36
38
RF LSB (GHz)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 5
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
40
20.0-38.0 GHz GaAs MMIC
Balanced Mixer
February 2007 - Rev 26-Feb-07
M1004-BD
0.316
(0.012)
Mechanical Drawing
2.000
(0.079)
2
1.460
(0.057)
3
1.594
(0.063)
4
0.995
(0.039)
1
XM1004-BD
5
0.0
0.0
0.316
(0.012)
1.250
(0.049)
(Note: Engineering designator is 26BAM0545)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All Bond Pads are 0.100 x 0.100 (0.004 x 0.004).
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.550 mg.
Bond Pad #1 (RF)
Bond Pad #2 (IF1)
Bond Pad #3 (LO)
Bond Pad #4 (Vg)
Bond Pad #5 (IF2)
Bias Arrangement
IF1
2
Bypass Capacitors - See App Note [2]
3
RF
LO
1
4
Vg
XM1004-BD
5
IF2
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 3 of 5
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
20.0-38.0 GHz GaAs MMIC
Balanced Mixer
February 2007 - Rev 26-Feb-07
M1004-BD
App Note [1] Biasing - As shown in the bonding diagram, this device is operated by biasing Vg1 = -0.5V. Gate current
consumption is < 1mA.
App Note [2] Bias Arrangement - Each DC pad (Vg) needs to have DC bypass capacitance (~100-200 pF) as close to
the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
App Note [3] USB/LSB Selection - IF1 and IF2 are fed through a 180º Hybrid coupler for optimum performance. IF1 can
be singly fed with IF2 terminated in 50 Ohm for ease of use. This will result in approximately 2 dB reduction in IP3 and
conversion gain performance.
LSB
USB
IF2
For Upper Side Band operation (USB):
With IF1 and IF2 connected to the
direct port (0º) and coupled port (180º)
respectively as shown in the diagram,
the USB signal will reside on the
isolated port. The input port must be
loaded with 50 ohms.
For Lower Side Band operation (LSB):
With IF1 and IF2 connected to the
direct port (0º) and coupled port (180º)
respectively as shown in the diagram,
the LSB signal will reside on the input
port. The isolated port must be loaded
with 50 ohms.
IF1
An alternate method of Selection of USB or LSB:
USB
LSB
In Phase Combiner
In Phase Combiner
-180º
-180º
IF2
IF1
IF2
IF1
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 5
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
20.0-38.0 GHz GaAs MMIC
Balanced Mixer
February 2007 - Rev 26-Feb-07
M1004-BD
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
• Do not ingest.
• Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this product. This product must be
discarded in accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or
systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life
support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain
life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic
containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices need
careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable
grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be
clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured in a
nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die.
An epoxy fillet should be visible around the total die periphery. For additional information please see the Mimix "Epoxy Specifications
for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.0012 thick,
placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing
action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic
(80% Au 20% Sn) has a melting point of approximately 280 ºC (Note: Gold Germanium should be avoided). The work station
temperature should be 310 ºC +/- 10 ºC. Exposure to these extreme temperatures should be kept to minimum. The collet should be
heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during
placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond
pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2%
elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias
connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may
be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds
should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible.
RoHS Compliant Parts - All Mimix products are RoHS compliant unless specifically ordered with Tin-Lead finish.
Ordering Information
Part Number for Ordering
XM1004-BD-000V
XM1004-BD-EV1
Description
“V” - vacuum release gel paks
XM1004-BD die evaluation module
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 5
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.