N08L163WC2C
NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
Advance Information
8Mb Ultra-Low Power Asynchronous CMOS SRAM
512K × 16 bit
Overview
Features
The N08L163WC2C is an integrated memory
device containing a 8 Mbit Static Random Access
Memory organized as 524,288 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with two chip enable
(CE1 and CE2) controls and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently and can also be used to
deselect the device. The N08L163WC2C is optimal
for various applications where low-power is critical
such as battery backup and hand-held devices.
The device can operate over a very wide
temperature range of -40oC to +85oC and is
available in JEDEC standard packages compatible
with other standard 512Kb x 16 SRAMs
• Single Wide Power Supply Range
2.2 to 3.6 Volts
• Very low standby current
2.0µA at 3.0V (Typical)
• Very low operating current
1.5mA at 3.0V and 1µs(Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.5V
• Very fast output enable access time
25ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Ultra Low Power Sort Available
Product Family
Part Number
Package Type
Operating
Temperature
N08L163WC2CZ1
VFBGA Pb-Free
-40oC to +85oC
Pin Configuration
Power
Supply (Vcc)
Speed
2.2V - 3.6V
55ns
Standby
Current Operating Current
(ISB),
(Icc), Typical
Typical
2 µA
1.5 mA @ 1MHz
Pin Descriptions
1
2
3
4
5
6
A
LB
OE
A0
A1
A2
CE2
B
I/O8
UB
A3
A4
CE1
I/O0
C
I/O9
I/O10
A5
A6
I/O1
I/O2
D
VSS
I/O11
A17
A7
I/O3
VCC
E
VCC
I/O12 DNU
A16
I/O4
VSS
F
I/O14 I/O13
A14
A15
I/O5
I/O6
G
I/O15
NC
A12
A13
WE
I/O7
H
A18
A8
A9
A10
A11
NC
48 Pin VFBGA (top)
6 x 8 mm
Pin Name
Pin Function
A0-A18
Address Inputs
WE
CE1, CE2
OE
LB
UB
I/O0-I/O15
Write Enable Input
Chip Enable Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Data Inputs/Outputs
VCC
Power
VSS
Ground
NC
Not Connected
Stock No. 23380-C
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1
N08L163WC2C
Advance Information
NanoAmp Solutions, Inc.
Functional Block Diagram
Word
Address
Decode
Logic
Address
Inputs
A4 - A18
Page
Address
Decode
Logic
32K Page
x 16 word
x 16 bit
RAM Array
Input/
Output
Mux
and
Buffers
Word Mux
Address
Inputs
A0 - A3
I/O0 - I/O7
I/O8 - I/O15
CE1
CE2
WE
OE
UB
LB
Control
Logic
Functional Description
CE1
CE2
WE
OE
UB
LB
I/O0 - I/O151
MODE
POWER
H
X
X
X
X
X
High Z
Standby2
Standby
X
L
X
X
X
X
High Z
Standby2
Standby
X
X
X
X
H
H
High Z
Standby2
Standby
L
H
L
X3
L1
L1
Data In
Write3
Active
L
L1
L1
Data Out
Read
Active
H
L1
L1
High Z
Active
Active
L
L
H
H
H
H
1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7
are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown.
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally
isolated from any external influence and disabled from exerting any influence externally.
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance1
Item
Symbol
Test Condition
Input Capacitance
CIN
I/O Capacitance
CI/O
Min
Max
Unit
VIN = 0V, f = 1 MHz, TA = 25oC
10
pF
VIN = 0V, f = 1 MHz, TA = 25oC
10
pF
1. These parameters are verified in device characterization and are not 100% tested
Stock No. 23380-C
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
2
N08L163WC2C
Advance Information
NanoAmp Solutions, Inc.
Absolute Maximum Ratings
Item
Symbol
Rating
Unit
Voltage on any pin relative to VSS
VIN,OUT
–0.3 to VCC+0.3
V
Voltage on VCC Supply Relative to VSS
VCC
–0.3 to 4.5
V
Power Dissipation
PD
500
mW
Storage Temperature
TSTG
–65 to 150
o
Operating Temperature
TA
-40 to +85
oC
Soldering Temperature and Time
TSOLDER
260oC, 10sec
C
o
C
Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Test Conditions
Min.
Typ1
Max
Unit
2.2
3.0
3.6
V
Item
Symbol
Supply Voltage
VCC
Data Retention Voltage
VDR
Input High Voltage
VIH
Input Low Voltage
VIL
Output High Voltage
VOH
Output Low Voltage
VOL
Input Leakage Current
ILI
VIN = 0 to VCC
-1
Output Leakage Current
ILO
OE = VIH or Chip Disabled
-1
Chip Disabled
1.5
V
Vcc = 2.2V to 2.7V
1.8
VCC+0.3
Vcc = 2.7V to 3.6V
2.2
VCC+0.3
Vcc = 2.2V to 2.7V
–0.3
0.6
Vcc = 2.7V to 3.6V
–0.3
0.8
IOH = -0.1mA, Vcc = 2.2V
2.0
IOH = -1.0mA, Vcc = 2.7V
2.4
0.4
IOL = 2.1mA, Vcc = 2.7V
0.4
ICC1
VCC=3.6 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
Read/Write Operating Supply Current
@ fmax
ICC2
VCC=3.6 V, VIN=VIH or VIL Chip
Enabled, IOUT = 0
Maximum Standby Current
ISB1
VIN = VCC or 0V
Chip Disabled
tA= 85oC, VCC = 3.6 V
Maximum Data Retention Current
IDR
-L
-L
-L
Vcc = 1.5V, CE ≥ Vcc - 0.2V,
VIN ≥ Vcc - 0.2V or VIN ≤ 0.2V -L
V
V
IOL = 0.1mA, Vcc = 2.2V
Read/Write Operating Supply Current
@ 1 µs Cycle Time2
V
V
1
µA
1
µA
1.5
3
1.5
3
12.0
20.0
12.0
15.0
2.0
20
2.0
8
10
4
mA
mA
µA
µA
1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and not 100% tested.
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive
output capacitance expected in the actual system.
Stock No. 23380-C
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
3
N08L163WC2C
Advance Information
NanoAmp Solutions, Inc.
Timing Test Conditions
Item
Input Pulse Level
0.1VCC to 0.9 VCC
Input Rise and Fall Time
1V/ns
Input and Output Timing Reference Levels
0.5 VCC
Output Load
CL = 50pF
Operating Temperature
-40 to +85 oC
Timing
55
Item
Symbol
Read Cycle Time
tRC
Address Access Time (Random Access)
tAA
55
ns
Chip Enable to Valid Output
tCO
55
ns
Output Enable to Valid Output
tOE
25
ns
Byte Select to Valid Output
tLB, tUB
55
ns
Chip Enable to Low-Z output
tLZ
10
ns
Output Enable to Low-Z Output
tOLZ
5
ns
Byte Select to Low-Z Output
tLBZ, tUBZ
10
ns
Chip Disable to High-Z Output
tHZ
20
ns
Output Disable to High-Z Output
tOHZ
20
ns
Byte Select Disable to High-Z Output
tLBHZ, tUBHZ
Output Hold from Address Change
tOH
10
ns
Write Cycle Time
tWC
55
ns
Chip Enable to End of Write
tCW
40
ns
Address Valid to End of Write
tAW
40
ns
Byte Select to End of Write
tLBW, tUBW
40
ns
Write Pulse Width
tWP
40
ns
Address Setup Time
tAS
0
ns
Write Recovery Time
tWR
0
ns
Write to High-Z Output
tWHZ
Data to Write Time Overlap
tDW
25
ns
Data Hold from Write Time
tDH
0
ns
End Write to Low-Z Output
tOW
10
ns
Min
Max
Units
55
ns
20
20
ns
ns
Note:
1. Full device AC operation assumes a 100us ramp time from 0 to Vcc(min) and 200us wait time after Vcc stablization.
2. Full device operation requires linear Vcc ramp from VDR to Vcc(min) ≥ 100us or stable at Vcc(min) ≥ 100us.
Stock No. 23380-C
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
4
N08L163WC2C
Advance Information
NanoAmp Solutions, Inc.
Timing of Read Cycle (CE1 = OE = VIL, WE = CE2 = VIH)
tRC
Address
tAA,
tOH
Data Out
Previous Data Valid
Data Valid
Timing Waveform of Read Cycle (WE=VIH)
tRC
Address
tAA,
tHZ
CE1
tCO
CE2
tLZ
tOHZ
tOE
OE
tOLZ
tLB, tUB
LB, UB
tLBLZ, tUBLZ
Data Out
High-Z
tLBHZ, tUBHZ
Data Valid
Stock No. 23380-C
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
5
N08L163WC2C
Advance Information
NanoAmp Solutions, Inc.
Timing Waveform of Write Cycle (WE control)
tWC
Address
tWR
tAW
CE1
tCW
CE2
tLBW, tUBW
LB, UB
tAS
tWP
WE
tDW
High-Z
tDH
Data Valid
Data In
tWHZ
tOW
High-Z
Data Out
Timing Waveform of Write Cycle (CE1 Control)
tWC
Address
tAW
CE1
(for CE2 Control, use
inverted signal)
tWR
tCW
tAS
tLBW, tUBW
LB, UB
tWP
WE
tDW
Data Valid
Data In
tLZ
Data Out
tDH
tWHZ
High-Z
Stock No. 23380-C
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
6
N08L163WC2C
Advance Information
NanoAmp Solutions, Inc.
Data Retention Characteristics
Parameter
Description
Condition
Min
Typ
Max
VDR
Vcc for Data Retention
ICCDR
Data Retention Current
tCDR
Chip Deselect to Data
Retention Time
0
ns
tR
Operation Recovery Time
tRC
ns
1.5
Vcc = 1.5V, CE ≥ Vcc - 0.2V,
VIN ≥ Vcc - 0.2V or VIN ≤ 0.2V
V
10
-L
Unit
4
µA
Data Retention Waveform
Data Retention Mode
Vcc
Vcc(min)
VDR ≥ 1.5V
tCDR
Vcc(min)
tR
CE1 or
LB/UB
or
CE2
Note: Full device operation requires linear Vcc ramp from VDR to Vcc(min) > 100 µs
Stock No. 23380-C
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
7
N08L163WC2C
Advance Information
NanoAmp Solutions, Inc.
VFBGA Package
0.23±0.05
1.00 MAX
D
A1 BALL PAD
CORNER (3)
1. 0.30±0.05 DIA.
E
2. SEATING PLANE - Z
0.15 Z
0.05
TOP VIEW
Z
SIDE VIEW
1. DIMENSION IS MEASURED AT THE
A1 BALL PAD
MAXIMUM SOLDER BALL DIAMETER.
CORNER
PARALLEL TO PRIMARY Z.
SD
e
SE
2. PRIMARY DATUM Z AND SEATING
PLANE ARE DEFINED BY THE
SPHERICAL CROWNS OF THE
SOLDER BALLS.
3. A1 BALL PAD CORNER I.D. TO BE
MARKED BY INK.
K TYP
J TYP
e
BOTTOM VIEW
Dimensions (mm)
e = 0.75
D
6±0.10
SD
SE
J
K
BALL
MATRIX
TYPE
0.375
0.375
1.125
1.375
FULL
E
8±0.10
Stock No. 23380-C
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
8
N08L163WC2C
Advance Information
NanoAmp Solutions, Inc.
Ordering Information
N08L163WC2CX-XX X L
L = Ultra Low Power Sort
Temperature
I = Industrial, -40°C to 85°C
55 = 55ns
Performance
Package Type
Z1 = 48-ball VFBGA Pb-Free Package
Revision History
Revision
Date
Change Description
A
Oct 6. 2004
Initial Advance Release
B
Nov 9. 2004
General Update
C
Jan 14, 2005
General Update
© 2001 - 2002 Nanoamp Solutions, Inc. All rights reserved.
NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice.
NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration purposes only and they vary depending upon specific applications.
NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application
or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp
product may be expected to result in significant injury or death, including life support systems and critical medical instruments.
Stock No. 23380-C
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
9