NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
N02M0818L2A
2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM
256Kx8 bit
Overview
Features
The N02M0818L2A is an integrated memory
device intended for implanted life-support (Class 3)
medical applications. This device comprises a 2
Mbit Static Random Access Memory organized as
262,144 words by 8 bits. The device is designed
and fabricated using NanoAmp’s advanced CMOS
technology with reliability inhancements for
medical users. The base design is the same as
NanoAmp’s N02M0818L1A, which is intended for
non life-support (Class 1 and 2) medical
applications. The device operates with two chip
enable (CE1 and CE2) controls and output enable
(OE) to allow for easy memory expansion. The
N02M0818L2A is optimal for various applications
where low-power is critical such as implanted
pacemaker devices. The device can operate over a
very wide temperature range of -20oC to +60oC
and is available in die form as well as in JEDEC
standard packages compatible with other standard
256Kb x 8 SRAMs
• Single Wide Power Supply Range
1.3 to 2.3 Volts
• Very low standby current
200nA typical at 2.1V and 37 deg C
• Very low operating current
1 mA at 2.0V and 1µs (Typical)
• Very low Page Mode operating current
0.5mA at 1.0V and 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.0V
• Automatic power down to standby mode
• TTL compatible three-state output driver
Product Family
Part Number
Package Type
N02M0818L2AN
32 - STSOP I
N02M0818L2AD Known Good Die
Operating
Temperature
Power
Supply (Vcc)
Speed
Standby
Current
(ISB)
Operating
Current (Icc),
Max
-20oC to +60oC
1.3V - 2.3V
100ns @ 1.65V
500ns @ 1.3V
450nA @
2.3V
2.5 mA @ 1MHz
Pin Configuration
Pin Descriptions
Pin Name
A11
A9
A8
A13
WE
CE2
A15
Vcc
A17
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
N02M0818L2A
STSOP
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE1
I/O7
I/O6
I/O5
I/O4
I/O3
Vss
I/O2
I/O1
I/O0
A0
A1
A2
A3
Pin Function
A0-A17
Address Inputs
WE
CE1, CE2
OE
I/O0-I/O7
Write Enable Input
Chip Enable Input
Output Enable Input
Data Inputs/Outputs
VCC
Power
VSS
Ground
(DOC#14-02-036 Rev C ECN#01-0887)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1
N02M0818L2A
NanoAmp Solutions, Inc.
Functional Block Diagram
VCCQ(opt)
Word
Address
Address
Inputs
A0 - A3
Decode
Logic
CE1
CE2
WE
OE
Control
Logic
16K Page
x 16 word
x 8 bit
RAM
Word Mux
Address
Inputs
A4 - A17
Page
Address
Decode
Logic
Input/
Output
Mux
and
Buffers
I/O0 - I/O7
Functional Description
CE1
CE2
WE
OE
I/O0 - I/O7
MODE
POWER
H
X
X
X
High Z
Standby1
Standby
Standby
X
L
X
X
High Z
Standby1
Data In
Write2
Active
L
H
L
X2
L
H
H
L
Data Out
Read
Active
L
H
H
H
High Z
Active
Active
1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated
from any external influence and disabled from exerting any influence externally.
2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance1
Item
Symbol
Test Condition
Max
Unit
25oC
Min
8
pF
8
pF
Input Capacitance
CIN
VIN = 0V, f = 1 MHz, TA =
I/O Capacitance
CI/O
VIN = 0V, f = 1 MHz, TA = 25oC
1. These parameters are verified in device characterization and are not 100% tested
(DOC#14-02-036 Rev C ECN#01-0887)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
2
N02M0818L2A
NanoAmp Solutions, Inc.
Absolute Maximum Ratings1
Item
Symbol
Rating
Unit
Voltage on any pin relative to VSS
VIN,OUT
–0.3 to VCC+0.3
V
Voltage on VCC Supply Relative to VSS
VCC
–0.3 to 3.0
V
Power Dissipation
PD
500
mW
Storage Temperature
TSTG
–40 to 125
o
Operating Temperature
TA
-20 to +60
oC
Soldering Temperature and Time
TSOLDER
10sec(Lead only)
oC
240oC,
C
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Recommended Operating Limits (Not all inclusive values tested)1
Item
Symbol
Core Supply Voltage
VCC
Data Retention Voltage
VDR
Input High Voltage
VIH
Input Low Voltage
VIL
Output High Voltage
VOH
IOH = 0.2mA
Output Low Voltage
VOL
IOL = -0.2mA
0.3
V
Input Leakage Current
ILI
VIN = 0 to VCC
0.1
µA
Output Leakage Current
ILO
OE = VIH or Chip Disabled
0.1
µA
Read/Write Operating Supply Current
@ 1 µs Cycle Time2
ICC1
VCC=2.3 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
2.5
mA
Read/Write Operating Supply Current
@ 85 ns Cycle Time2
ICC2
VCC=2.3 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
13.0
mA
Standby Current
ISB1
VIN = VCC or 0V
Chip Disabled
tA= 37oC, VCC = 2.3 V
450
nA
Data Retention Current3
IDR
1.0
µA
3
Test Conditions
Chip Disabled (Note 3)
Min.
Max
Unit
1.3
2.3
V
1.0
V
0.3VCCQ
V
–0.5
VCC = 1.0V, VIN = VCC or 0
Chip Disabled, tA= 85oC
V
0.7VCCQ VCCQ+0.5
VCCQ–0.3
V
1. These limits are the expected operating conditions for this device. Only selected points within this range of conditions
are specifically tested and guaranteed.
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current
required to drive output capacitance expected in the actual system.
3. The chip is Disabled when CE1# is high or CE2 is low or UB# and LB# are high. The chip is Enabled when CE1# is
low and CE2 is high.
(DOC#14-02-036 Rev C ECN#01-0887)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
3
N02M0818L2A
NanoAmp Solutions, Inc.
Recommended Timing Limits - Read Cycle (Not all inclusive values tested)
1.3 - 2.3 V
Item
1.65 - 2.3 V
Symbol
Units
Min.
Max.
Min.
Max.
Read Cycle Time
tRC
Address Access Time
tAA
500
100
ns
Chip Enable to Valid Output
tCO
500
100
ns
Output Enable to Valid Output
tOE
200
50
ns
Chip Enable to Low-Z output
tLZ
100
20
ns
Output Enable to Low-Z Output
tOLZ
50
10
ns
Chip Disable to High-Z Output
tHZ
0
150
0
30
ns
Output Disable to High-Z Output
tOHZ
0
150
0
30
ns
Output Hold from Address Change
tOH
50
500
100
ns
10
ns
Recommended Timing Limits - Write Cycle (Not all inclusive values tested)
1.3 - 2.3 V
Item
1.65 - 2.3 V
Symbol
Units
Min.
Max.
Min.
Max.
Write Cycle Time
tWC
500
85
ns
Chip Enable to End of Write
tCW
400
50
ns
Address Valid to End of Write
tAW
400
50
ns
Address Setup Time
tWP
300
40
ns
Write Pulse Width
tAS
0
0
ns
Write Recovery Time
tWR
0
0
ns
Write to High-Z Output
tWHZ
Data to Write Time Overlap
tDW
300
40
ns
Data Hold from Write Time
tDH
0
0
ns
End Write to Low-Z Output
tOW
50
10
ns
Output Hold from Address Change
tOH
0
0
ns
50
15
ns
(DOC#14-02-036 Rev C ECN#01-0887)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
4
N02M0818L2A
NanoAmp Solutions, Inc.
Timing of Read Cycle (CE1 = OE = VIL, WE = CE2 = VIH)
tRC
Address
tAA
tOH
Data Out
Previous Data Valid
Data Valid
Timing Waveform of Read Cycle (WE=VIH)
tRC
Address
tAA
tHZ
CE1
tCO
CE2
tLZ
tOHZ
tOE
OE
tOLZ
Data Out
High-Z
Data Valid
(DOC#14-02-036 Rev C ECN#01-0887)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
5
N02M0818L2A
NanoAmp Solutions, Inc.
Timing Waveform of Write Cycle (WE control)
tWC
Address
tWR
tAW
CE1
tCW
CE2
tAS
tWP
WE
tDW
High-Z
tDH
Data Valid
Data In
tWHZ
tOW
High-Z
Data Out
Timing Waveform of Write Cycle (CE1 Control)
tWC
Address
tWR
tAW
CE1
(for CE2 Control, use
inverted signal)
tAS
tCW
tWP
WE
tDW
Data Valid
Data In
tLZ
Data Out
tDH
tWHZ
High-Z
(DOC#14-02-036 Rev C ECN#01-0887)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
6
N02M0818L2A
NanoAmp Solutions, Inc.
32-Lead STSOP-I Package (N32)
11.80±0.10
0.50mm REF
8.0±0.10
0.27
0.17
13.40±0.20
SEE DETAIL B
DETAIL B
1.10±0.15
0o-8o
0.20
0.00
0.80mm REF
Note:
1. All dimensions in millimeters
2. Package dimensions exclude molding flash
(DOC#14-02-036 Rev C ECN#01-0887)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
7
N02M0818L2A
NanoAmp Solutions, Inc.
Ordering Information
N02M0818L2AX-XX X
Temperature
Performance
Package Type
20°C to 60°C
100 = 100ns @ 1.65V
N = 32-pin STSOP I
D = Known Good Die
Revision History
Revision #
Date
Change Description
A
Dec 2002
Initial Release
B
January 2004
Updated with power characteristics
C
July 2004
General Update
© 2001 - 2002 Nanoamp Solutions, Inc. All rights reserved.
NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice.
NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration purposes only and they vary depending upon specific applications.
NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application
or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp
product may be expected to result in significant injury or death, including life support systems and critical medical instruments.
(DOC#14-02-036 Rev C ECN#01-0887)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
8