NIEC PDT608

THYRISTOR MODULE
P D T 6 0 8
60A / 800V
P D H 6 0 8
FEATURES
* Isolated Base
* Dual Thyristors or Thyristor and Diode
Cascaded Circuit
* High Surge Capability
* UL Recognized, File No. E187184
TYPICAL APPLICATIONS
OUTLINE DRAWING
PDT
* Rectified For General Use
PDH
Maximum Ratings
Parameter
Repetitive Peak Off-State Voltage
Non Repetitive Peak Off-State Voltage
Repetitive Peak Reverse Voltage
Non Repetitive Peak Reverse Voltage
Approx Net Weight:155g
Symbol
Conditions
Average Rectified Output Current
IO(AV)
RMS On-State Current
IT(RMS)
I Squared t
ITSM
I2t
Critical Rate of Turned-On Current
di/dt
Peak Gate Power
Average Gate Power
Peak Gate Current
Peak Gate Voltage
Peak Gate Reverse Voltage
Operating JunctionTemperature Range
Storage Temperature Range
Isoration Voltage
Case mounting
Mounting torque
Terminals
Value per 1 Arm
PGM
PG(AV)
IGM
VGM
VRGM
Tjw
Tstg
Viso
Ftor
Unit
800
960
800
960
VDRM
VDSM
VRRM
VRSM
Parameter
Surge On-State Current
Grade
PDT/PDH608
50Hz Half Sine Wave condition
Tc=83°C
50 Hz Half Sine Wave,1Pulse,
Non-Repetitive
2msec to 10msec
VD=2/3VDRM, ITM=2 IO, Tj=125°C
IG=200mA, diG/dt=0.2A/µs
•
V
V
Max Rated
Value
Unit
60
A
94
A
1200
A
7200
A2s
100
A/µs
5
W
1
W
2
A
10
V
5
V
-40 to +125 °C
-40 to +125 °C
Base Plate to Terminals, AC1min
2000
V
M5 Screw
2.4 to 2.8
N •m
M5 Screw
2.4 to 2.8
Electrical • Thermal Characteristics
Characteristics
VDM= VDRM, Tj= 125°C
VRM= VRRM, Tj= 125°C
ITM= 180A, Tj=25°C
Tj=-40°C
VD=6V,IT=1A
Tj=25°C
Tj=125°C
Tj=-40°C
VD=6V,IT=1A
Tj=25°C
Tj=125°C
VD=2/3VDRM Tj=125°C
Maximum Value.
Min. Typ. Max.
15
15
1.38
200
100
50
4
2.5
2
0.25
dv/dt
VD=2/3VDRM Tj=125°C
500
tq
ITM=IO,VD=2/3VDRM
dv/dt=20V/µs, VR=100V
-di/dt=20A/µs, Tj=125°C
Symbol
Peak Off-State Current
Peak Reverse Current
Peak Forward Voltage
IDM
IRM
VTM
Gate Current to Trigger
IGT
Gate Voltage to Trigger
VGT
Gate Non-Trigger Voltage
Critical Rate of Rise of Off-State
Voltage
VGD
Turn-Off Time
Turn-On Time
Delay Time
Rise Time
Latching Current
Holding Current
Thermal Resistance
Value Per 1Arm
tgt
td
tr
IL
IH
Rth(j-c)
Test Conditions
VD=2/3VDRM Tj=125°C
IG=200mA, diG/dt=0.2A/µs
Tj=25°C
Tj=25°C
Junction to Case
Base Plate to Heat Sink
Rth(c-f)
with Thermal Compound
Unit
mA
mA
V
mA
V
V
V/µs
100
µs
6
2
4
100
50
µs
µs
µs
mA
0.5
0.2
°C/W
PDT/PDH608 OUTLINE DRAWING (Dimensions in mm)
PDT
PDH