THYRISTOR MODULE P D T 6 0 8 60A / 800V P D H 6 0 8 FEATURES * Isolated Base * Dual Thyristors or Thyristor and Diode Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS OUTLINE DRAWING PDT * Rectified For General Use PDH Maximum Ratings Parameter Repetitive Peak Off-State Voltage Non Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Non Repetitive Peak Reverse Voltage Approx Net Weight:155g Symbol Conditions Average Rectified Output Current IO(AV) RMS On-State Current IT(RMS) I Squared t ITSM I2t Critical Rate of Turned-On Current di/dt Peak Gate Power Average Gate Power Peak Gate Current Peak Gate Voltage Peak Gate Reverse Voltage Operating JunctionTemperature Range Storage Temperature Range Isoration Voltage Case mounting Mounting torque Terminals Value per 1 Arm PGM PG(AV) IGM VGM VRGM Tjw Tstg Viso Ftor Unit 800 960 800 960 VDRM VDSM VRRM VRSM Parameter Surge On-State Current Grade PDT/PDH608 50Hz Half Sine Wave condition Tc=83°C 50 Hz Half Sine Wave,1Pulse, Non-Repetitive 2msec to 10msec VD=2/3VDRM, ITM=2 IO, Tj=125°C IG=200mA, diG/dt=0.2A/µs • V V Max Rated Value Unit 60 A 94 A 1200 A 7200 A2s 100 A/µs 5 W 1 W 2 A 10 V 5 V -40 to +125 °C -40 to +125 °C Base Plate to Terminals, AC1min 2000 V M5 Screw 2.4 to 2.8 N •m M5 Screw 2.4 to 2.8 Electrical • Thermal Characteristics Characteristics VDM= VDRM, Tj= 125°C VRM= VRRM, Tj= 125°C ITM= 180A, Tj=25°C Tj=-40°C VD=6V,IT=1A Tj=25°C Tj=125°C Tj=-40°C VD=6V,IT=1A Tj=25°C Tj=125°C VD=2/3VDRM Tj=125°C Maximum Value. Min. Typ. Max. 15 15 1.38 200 100 50 4 2.5 2 0.25 dv/dt VD=2/3VDRM Tj=125°C 500 tq ITM=IO,VD=2/3VDRM dv/dt=20V/µs, VR=100V -di/dt=20A/µs, Tj=125°C Symbol Peak Off-State Current Peak Reverse Current Peak Forward Voltage IDM IRM VTM Gate Current to Trigger IGT Gate Voltage to Trigger VGT Gate Non-Trigger Voltage Critical Rate of Rise of Off-State Voltage VGD Turn-Off Time Turn-On Time Delay Time Rise Time Latching Current Holding Current Thermal Resistance Value Per 1Arm tgt td tr IL IH Rth(j-c) Test Conditions VD=2/3VDRM Tj=125°C IG=200mA, diG/dt=0.2A/µs Tj=25°C Tj=25°C Junction to Case Base Plate to Heat Sink Rth(c-f) with Thermal Compound Unit mA mA V mA V V V/µs 100 µs 6 2 4 100 50 µs µs µs mA 0.5 0.2 °C/W PDT/PDH608 OUTLINE DRAWING (Dimensions in mm) PDT PDH