SM5073 series VCXO ICs with Built-in Varicap OVERVIEW The SM5073 series are VCXO ICs with built-in varicap diode. They use a recently developed negative-resistance switching oscillation circuit, at oscillation startup and during normal oscillation, for both good oscillation startup characteristics and wide pullrange. Furthermore, it employs a CMOS process varicap diode, and also features all the necessary VCXO structure circuit components on a single chip, forming a VCXO with just the connection of an external crystal. ■ ■ ■ ■ 0.695typ 5.2 0.3 1.27 ■ ■ ■ 0 to 10 0.10 APPLICATIONS ■ 0.4 0.2 ■ ■ 4.4 0.2 ■ 0.15 + 0.1 − 0.05 6.2 0.3 ■ (Unit: mm) 0.05 0.05 ■ 3.0 to 3.6V supply voltage range 10MHz to 60MHz operating frequency (varies with version) Uses negative-resistance switching function Varicap diode built-in Frequency divider built-in (varies with version: fO, fO/2, fO/4, fO/8, fO/16, fO/32) CMOS output level 50 ± 10% output duty 6mA (min) output drive capability 15pF output load capacitance CL Standby function High impedance in standby mode (oscillator continues running) Package: 8-pin SOP (SM5073××S) 0.1 ■ ■ PACKAGE DIMENSIONS 1.5 FEATURES 0.4 0.1 0.12 M VCXO modules Communications application Networking application Broadcasting application SERIES LINEUP Typical oscillation frequency1 [MHz] Version SM5073A×S 16 SM5073B×S 23 SM5073C×S 30 SM5073D×S 37 SM5073E×S 44 SM5073F×S 51 Output frequency SM5073×1S SM5073×2S2 SM5073×3S2 SM5073×4S2 SM5073×5S2 SM5073×6S2 fO fO/2 fO/4 fO/8 fO/16 fO/32 1. The typical oscillation frequency is the oscillation frequency criteria for use when selecting the device version. Note that the oscillation characteristics and pullability vary with the crystal used and the mounting conditions. Even for the same frequency, the optimal version can vary with crystal characteristics, so careful evaluation should be exercised when selecting the device version. 2. These versions are produced after receiving a purchase order. Please ask our Sales & Marketing section for further detail. ORDERING INFORMATION Device Package SM5073××S 8-pin SOP SEIKO NPC CORPORATION —1 SM5073 series PINOUT (Top view) XTN 1 8 XT VC 2 7 VDD INHN 3 6 NC VSS 4 5 Q PIN DESCRIPTION Number Name I/O Description Function 1 XTN O Amplifier output pin Crystal connection pins. Crystal is connected between XT and XTN. 2 VC I Oscillation frequency control voltage input pin Positive polarity (frequency increases with increasing voltage) 3 INHN I Output state control voltage input pin High-impedance output when LOW, pull-up resistor built-in 4 VSS – (−) supply pin 5 Q O Output pin 6 NC – No connection 7 VDD – (+) supply pin 8 XT I Amplifier input pin Output frequency determined by internal circuit to one of fO, fO/2, fO/4, fO/8, fO/16, fO/32 Crystal connection pins. Crystal is connected between XT and XTN. SEIKO NPC CORPORATION —2 SM5073 series BLOCK DIAGRAM Rf 1/2 CG 1/2 1/2 1/2 1/2 Q XT RD CV XTN CC CD VDD RB2 RB1 VC VSS RUP INHN Note. ESD of XT pin is inferior to other pins. ESD of all pins excluding XT pin is equivalent to that of our other oscillator products. VC pin has no protection circuit at VDD side. (See figure below.) VC Internal circuit SEIKO NPC CORPORATION —3 SM5073 series ABSOLUTE MAXIMUM RATINGS VSS = 0V unless otherwise noted. Parameter Symbol Supply voltage range VDD Input voltage range VIN Conditions All input pins excluding VC pin Rating Unit −0.5 to 7.0 V −0.5 to VDD + 0.5 V + 2.51 V −0.5 to VDD VC pin Output voltage range VOUT −0.5 to VDD + 0.5 V Operating temperature range Topr −40 to +85 °C Storage temperature range TSTG −55 to +125 °C Output current IOUT 20 mA Power dissipation PD 500 mW 1. It should not exceed + 7.0V. RECOMMENDED OPERATING CONDITIONS VSS = 0V, f = 10MHz to 60MHz, CL ≤ 15pF unless otherwise noted. Rating Parameter Symbol Conditions Unit Min Typ Max Operating supply voltage VDD 3.0 – 3.6 V Input voltage VIN VSS – VDD V TOPR –40 – +85 °C Operating temperature SEIKO NPC CORPORATION —4 SM5073 series ELECTRICAL CHARACTERISTICS SM5073A×S VDD = 3.0 to 3.6V, VC = 1.65V, VSS = 0V, Ta = –40 to +85°C, unless otherwise noted. Rating Parameter Symbol Conditions Unit Min Typ Max HIGH-level output voltage VOH Q: Measurement circuit 1, IOH = 6mA 2.5 2.75 – V LOW-level output voltage VOL Q: Measurement circuit 1, IOL = 6mA – 0.2 0.4 V VOH = VDD – – 10 µA VOL = VSS – – 10 µA IZ Q: Measurement circuit 6, INHN = LOW HIGH-level input voltage VIH INHN 0.7VDD – – V LOW-level input voltage VIL INHN – – 0.3VDD V SM5073A1S – 8 23 mA SM5073A2S – 7.5 22.5 mA IDD Measurement circuit 2, load circuit 1, INHN = open, CL = 15pF, f = 16MHz SM5073A3S – 7 22 mA SM5073A4S to 6S – 7 22 mA Measurement circuit 3 50 100 180 kΩ Design value. A monitor pattern on a wafer is tested. 150 300 540 kΩ 0.67 0.96 1.25 kΩ RB1 Measurement circuit 4 100 200 360 kΩ RB2 Design value. A monitor pattern on a wafer is tested. 50 100 180 kΩ Design value. A monitor pattern on a wafer is tested. VC = 0.3V 11.0 14.4 17.8 pF CV VC = 3.0V 2.4 4.0 5.6 pF 25.5 30 34.5 pF 34 40 46 pF 8.5 10 11.5 pF Output leakage current Current consumption INHN pull-up resistance RUP Rf RD Built-in resistance Built-in capacitance CG CD CC Design value. A monitor pattern on a wafer is tested. SEIKO NPC CORPORATION —5 SM5073 series SM5073B×S VDD = 3.0 to 3.6V, VC = 1.65V, VSS = 0V, Ta = –40 to +85°C, unless otherwise noted. Rating Parameter Symbol Conditions Unit Min Typ Max HIGH-level output voltage VOH Q: Measurement circuit 1, IOH = 6mA 2.5 2.75 – V LOW-level output voltage VOL Q: Measurement circuit 1, IOL = 6mA – 0.2 0.4 V VOH = VDD – – 10 µA VOL = VSS – – 10 µA IZ Q: Measurement circuit 6, INHN = LOW HIGH-level input voltage VIH INHN 0.7VDD – – V LOW-level input voltage VIL INHN – – 0.3VDD V SM5073B1S – 9 25 mA SM5073B2S – 8 24 mA IDD Measurement circuit 2, load circuit 1, INHN = open, CL = 15pF, f = 23MHz SM5073B3S – 7.5 23.5 mA SM5073B4S to 6S – 7.5 23.5 mA Measurement circuit 3 50 100 180 kΩ Design value. A monitor pattern on a wafer is tested. 150 300 540 kΩ 0.50 0.72 0.94 kΩ RB1 Measurement circuit 4 100 200 360 kΩ RB2 Design value. A monitor pattern on a wafer is tested. 50 100 180 kΩ Design value. A monitor pattern on a wafer is tested. VC = 0.3V 11.0 14.6 18.2 pF CV VC = 3.0V 2.3 4.0 5.7 pF 25.5 30 34.5 pF 34 40 46 pF 12.7 15 17.3 pF Output leakage current Current consumption INHN pull-up resistance RUP Rf RD Built-in resistance Built-in capacitance CG CD CC Design value. A monitor pattern on a wafer is tested. SEIKO NPC CORPORATION —6 SM5073 series SM5073C×S VDD = 3.0 to 3.6V, VC = 1.65V, VSS = 0V, Ta = –40 to +85°C, unless otherwise noted. Rating Parameter Symbol Conditions Unit Min Typ Max HIGH-level output voltage VOH Q: Measurement circuit 1, IOH = 6mA 2.5 2.75 – V LOW-level output voltage VOL Q: Measurement circuit 1, IOL = 6mA – 0.2 0.4 V VOH = VDD – – 10 µA VOL = VSS – – 10 µA IZ Q: Measurement circuit 6, INHN = LOW HIGH-level input voltage VIH INHN 0.7VDD – – V LOW-level input voltage VIL INHN – – 0.3VDD V SM5073C1S – 10 28 mA SM5073C2S – 9 27 mA IDD Measurement circuit 2, load circuit 1, INHN = open, CL = 15pF, f = 30MHz SM5073C3S – 8.5 26.5 mA SM5073C4S to 6S – 8 26 mA Measurement circuit 3 50 100 180 kΩ Design value. A monitor pattern on a wafer is tested. 150 300 540 kΩ 0.50 0.72 0.94 kΩ RB1 Measurement circuit 4 100 200 360 kΩ RB2 Design value. A monitor pattern on a wafer is tested. 50 100 180 kΩ Design value. A monitor pattern on a wafer is tested. VC = 0.3V 11.0 14.6 18.2 pF CV VC = 3.0V 2.3 4.0 5.7 pF 25.5 30 34.5 pF 25.5 30 34.5 pF 29.7 35 40.3 pF Output leakage current Current consumption INHN pull-up resistance RUP Rf RD Built-in resistance Built-in capacitance CG CD CC Design value. A monitor pattern on a wafer is tested. SEIKO NPC CORPORATION —7 SM5073 series SM5073D×S VDD = 3.0 to 3.6V, VC = 1.65V, VSS = 0V, Ta = –40 to +85°C, unless otherwise noted. Rating Parameter Symbol Conditions Unit Min Typ Max HIGH-level output voltage VOH Q: Measurement circuit 1, IOH = 6mA 2.5 2.75 – V LOW-level output voltage VOL Q: Measurement circuit 1, IOL = 6mA – 0.2 0.4 V VOH = VDD – – 10 µA VOL = VSS – – 10 µA IZ Q: Measurement circuit 6, INHN = LOW HIGH-level input voltage VIH INHN 0.7VDD – – V LOW-level input voltage VIL INHN – – 0.3VDD V SM5073D1S – 11 30 mA SM5073D2S – 9.5 28.5 mA IDD Measurement circuit 2, load circuit 1, INHN = open, CL = 15pF, f = 37MHz SM5073D3S – 9 28 mA SM5073D4S to 6S – 8.5 27.5 mA Measurement circuit 3 50 100 180 kΩ Design value. A monitor pattern on a wafer is tested. 150 300 540 kΩ 0.25 0.36 0.47 kΩ RB1 Measurement circuit 4 100 200 360 kΩ RB2 Design value. A monitor pattern on a wafer is tested. 50 100 180 kΩ Design value. A monitor pattern on a wafer is tested. VC = 0.3V 11.0 14.6 18.2 pF CV VC = 3.0V 2.3 4.0 5.7 pF 25.5 30 34.5 pF 25.5 30 34.5 pF 34 40 46 pF Output leakage current Current consumption INHN pull-up resistance RUP Rf RD Built-in resistance Built-in capacitance CG CD CC Design value. A monitor pattern on a wafer is tested. SEIKO NPC CORPORATION —8 SM5073 series SM5073E×S VDD = 3.0 to 3.6V, VC = 1.65V, VSS = 0V, Ta = –40 to +85°C, unless otherwise noted. Rating Parameter Symbol Conditions Unit Min Typ Max HIGH-level output voltage VOH Q: Measurement circuit 1, IOH = 6mA 2.5 2.75 – V LOW-level output voltage VOL Q: Measurement circuit 1, IOL = 6mA – 0.2 0.4 V VOH = VDD – – 10 µA VOL = VSS – – 10 µA IZ Q: Measurement circuit 6, INHN = LOW HIGH-level input voltage VIH INHN 0.7VDD – – V LOW-level input voltage VIL INHN – – 0.3VDD V SM5073E1S – 12 32 mA SM5073E2S – 10.5 30.5 mA IDD Measurement circuit 2, load circuit 1, INHN = open, CL = 15pF, f = 44MHz SM5073E3S – 9.5 29.5 mA SM5073E4S to 6S – 9 29 mA Measurement circuit 3 50 100 180 kΩ Design value. A monitor pattern on a wafer is tested. 150 300 540 kΩ 0.25 0.36 0.47 kΩ RB1 Measurement circuit 4 100 200 360 kΩ RB2 Design value. A monitor pattern on a wafer is tested. 50 100 180 kΩ Design value. A monitor pattern on a wafer is tested. VC = 0.3V 11.0 14.6 18.2 pF CV VC = 3.0V 2.3 4.0 5.7 pF 21.2 25 28.8 pF 21.2 25 28.8 pF 42.5 50 57.5 pF Output leakage current Current consumption INHN pull-up resistance RUP Rf RD Built-in resistance Built-in capacitance CG CD CC Design value. A monitor pattern on a wafer is tested. SEIKO NPC CORPORATION —9 SM5073 series SM5073F×S VDD = 3.0 to 3.6V, VC = 1.65V, VSS = 0V, Ta = –40 to +85°C, unless otherwise noted. Rating Parameter Symbol Conditions Unit Min Typ Max HIGH-level output voltage VOH Q: Measurement circuit 1, IOH = 6mA 2.5 2.75 – V LOW-level output voltage VOL Q: Measurement circuit 1, IOL = 6mA – 0.2 0.4 V VOH = VDD – – 10 µA VOL = VSS – – 10 µA IZ Q: Measurement circuit 6, INHN = LOW HIGH-level input voltage VIH INHN 0.7VDD – – V LOW-level input voltage VIL INHN – – 0.3VDD V SM5073F1S – 13 35 mA SM5073F2S – 11 33 mA IDD Measurement circuit 2, load circuit 1, INHN = open, CL = 15pF, f = 51MHz SM5073F3S – 10 32 mA SM5073F4S to 6S – 9.5 31.5 mA Measurement circuit 3 50 100 180 kΩ Design value. A monitor pattern on a wafer is tested. 150 300 540 kΩ 0.25 0.36 0.47 kΩ RB1 Measurement circuit 4 100 200 360 kΩ RB2 Design value. A monitor pattern on a wafer is tested. 50 100 180 kΩ Design value. A monitor pattern on a wafer is tested. VC = 0.3V 9.5 12.5 15.5 pF CV VC = 3.0V 2.0 3.5 5.0 pF 17 20 23 pF 17 20 23 pF 42.5 50 57.5 pF Output leakage current Current consumption INHN pull-up resistance RUP Rf RD Built-in resistance Built-in capacitance CG CD CC Design value. A monitor pattern on a wafer is tested. SEIKO NPC CORPORATION —10 SM5073 series SWITCHING CHARACTERISTICS VDD = 3.0 to 3.6V, VC = 1.65V, VSS = 0V, Ta = –40 to +85°C, unless otherwise noted Rating1 Parameter Symbol Conditions Unit Min Typ Max Output rise time tr1 Measurement circuit 2, load circuit 1, 0.1VDD → 0.9VDD, CL = 15pF – 2.5 6 ns Output fall time tf1 Measurement circuit 2, load circuit 1, 0.9VDD → 0.1VDD, CL = 15pF – 2.5 6 ns Output duty cycle Duty Measurement circuit 2, load circuit 1, VDD = 3.3V, Ta = 25°C, CL = 15pF 40 50 60 % Output disable delay time tPLZ – – 100 ns Output enable delay time tPZL – – 100 ns Measurement circuit 5, load circuit 1, VDD = 3.3V, Ta = 25°C, CL ≤ 15pF 1. The switching characteristics apply for normal output waveforms. Note that, depending on the matching of the SM5073 series version and crystal, normal waveform output may not be continuous. Current consumption and Output waveform with NPC’s standard crystal C0 L1 C1 f [MHz] R1 [Ω] L1 [mH] C1 [fF] C0 [pF] 30 7.06 2.25 12.5 3.11 R1 FUNCTIONAL DESCRIPTION Standby Function When INHN goes LOW, the Q output pin becomes high impedance. INHN Q Oscillator HIGH (or open) Any fO, fO/2, fO/4, fO/8, fO/16, or fO/32 Operating LOW High impedance Operating SEIKO NPC CORPORATION —11 SM5073 series MEASUREMENT CIRCUITS Measurement Circuit 4 Measurement Circuit 1 R3 VDD Signal Generator When measuring VOL IRB1 A C1 XT R1 VDD VC Q VC VSS R2 Q output VDD VOH 0V Q output VDD VOL 0V RB1 = When measuring VOH VDD IRB1 XTN VSS XT input signal: 2.5Vp-p, 10MHz, sine wave C1 = 0.001µF, R1 = 50Ω, R2 = 417Ω, R3 = 434Ω, VC = 1.65V Measurement Circuit 5 Measurement Circuit 2 A VDD XT Signal Generator INHN X'tal XTN C1 XT VC R1 INHN Q VSS Q VC VDD VSS VC = 1.65V, INHN = open, crystal oscillation XT input signal: 2.5Vp-p, 10MHz, sine wave C1 = 0.001µF, R1 = 50Ω, VC = 1.65V Measurement Circuit 6 Measurement Circuit 3 RUP = VDD VDD IRUP VDD INHN INHN VC VC = 1.65V Q VC A IRUP VSS A VSS VC = 1.65V SEIKO NPC CORPORATION —12 SM5073 series Load Circuit 1 Q output CL (Including probe capacitance) Switching Time Measurement Waveform Output duty level, tr, tf Q output 0.9V DD 0.9V DD 0.1V DD 0.1V DD DUTY measurement voltage (0.5V DD ) TW tr1 tf1 Output duty cycle DUTY measurement voltage (0.5V DD) Q output TW DUTY= TW/ T T 100 (%) Output Enable/Disable Delay Times INHN VIH VIL tPZL tPLZ Q output INHN input waveform tr = tf 10ns SEIKO NPC CORPORATION —13 SM5073 series Please pay your attention to the following points at time of using the products shown in this document. The products shown in this document (hereinafter “Products”) are not intended to be used for the apparatus that exerts harmful influence on human lives due to the defects, failure or malfunction of the Products. Customers are requested to obtain prior written agreement for such use from SEIKO NPC CORPORATION (hereinafter “NPC”). Customers shall be solely responsible for, and indemnify and hold NPC free and harmless from, any and all claims, damages, losses, expenses or lawsuits, due to such use without such agreement. NPC reserves the right to change the specifications of the Products in order to improve the characteristic or reliability thereof. NPC makes no claim or warranty that the contents described in this document dose not infringe any intellectual property right or other similar right owned by third parties. Therefore, NPC shall not be responsible for such problems, even if the use is in accordance with the descriptions provided in this document. Any descriptions including applications, circuits, and the parameters of the Products in this document are for reference to use the Products, and shall not be guaranteed free from defect, inapplicability to the design for the mass-production products without further testing or modification. Customers are requested not to export or re-export, directly or indirectly, the Products to any country or any entity not in compliance with or in violation of the national export administration laws, treaties, orders and regulations. Customers are requested appropriately take steps to obtain required permissions or approvals from appropriate government agencies. SEIKO NPC CORPORATION 15-6, Nihombashi-kabutocho, Chuo-ku, Tokyo 103-0026, Japan Telephone: +81-3-6667-6601 Facsimile: +81-3-6667-6611 http://www.npc.co.jp/ Email: [email protected] NC0213BE 2006.04 SEIKO NPC CORPORATION —14