NPC WF5025AL2

WF5025 series
Crystal Oscillator Module ICs
OVERVIEW
The WF5025 series are miniature crystal oscillator module ICs. They feature a damping resistor RD matched to
the crystal's characteristics to reduce crystal current. The pad layout is arranged for flip chip mounting, which
gives the pattern design more flexibility, even for mounting ultra-miniature crystal oscillators that provide
almost no space for wiring patterns. They support fundamental oscillation and 3rd overtone oscillation modes.
The WF5025 series can be used to correspond to wide range of applications.
FEATURES
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Pad layout optimized for flip chip mounting
Miniature-crystal matched oscillator characteristics
Operating supply voltage range
• 2.5V operation: 2.25 to 2.75V
• 3.0V operation: 2.7 to 3.6V
Recommended operating frequency range
• For fundamental oscillator
- WF5025AL×: 20MHz to 50MHz
- WF5025BL1: 20MHz to 100MHz
• For 3rd overtone oscillator
- WF5025ML×: 70MHz to 133MHz
−40 to 85°C operating temperature range
Oscillator capacitor with excellent frequency characteristics built-in
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Oscillator circuit with damping resistor RD builtin for reduced crystal current
Standby function
• High impedance in standby mode, oscillator
stops
Low standby current
• Power-saving pull-up resistor built-in
Oscillation detector function
Frequency divider built-in (WF5025AL×)
• varies with version: fO, fO/2, fO/4, fO/8, fO/16,
fO/32
CMOS output duty level (1/2VDD)
50 ± 5% output duty @ 1/2VDD
30pF output load
Molybdenum-gate CMOS process
SERIES CONFIGURATION
Operating
supply voltage
[V]
Version
Oscillation
mode
Recommended
Output
operating frequency
current
range (fundamental (VDD = 2.5V)
[mA]
oscillation)*1 [MHz]
Standby mode
Output
frequency
WF5025AL1
fO
WF5025AL2
fO/2
WF5025AL3
WF5025AL4
2.25 to 3.6
Fundamental
20 to 50
4
WF5025AL5
Output state
CMOS
Yes
Hi-Z
fO/32
2.25 to 3.6
Fundamental
20 to 100
2.25 to 3.6
3rd overtone
80 to 100
WF5025MLA
(WF5025MLB)
fO/8
Oscillator
stop
function
fO/16
WF5025AL6
WF5025BL1*2
fO/4
Output duty
level
8
fO
CMOS
Yes
Hi-Z
8
fO
CMOS
Yes
Hi-Z
70 to 80
WF5025MLC
90 to 133
*1. The recommended operating frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscillator frequency band is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the
oscillation characteristics of components must be carefully evaluated.
*2. The WF5025BL1 has a higher maximum operating frequency, hence the negative resistance is also larger than in the WF5025AL× devices.
Note. These versions in parentheses ( ) are under development. Please ask our Sales & Marketing section for further detail.
ORDERING INFORMATION
Device
Package
WF5025×××–3
Wafer form
NIPPON PRECISION CIRCUITS INC.—1
WF5025 series
PAD LAYOUT
(Unit: µm)
(750,850)
HA5025
VSS
Y
Q
VDD
INHN
NPC
XTN
XT
(0,0)
X
Chip size: 0.75 × 0.85mm
Chip thickness: 180 ± 20µm
PAD size: 90µm
Chip base: VDD level
PIN DESCRIPTION and PAD DIMENSIONS
Pad dimensions [µm]
Name
I/O
Description
X
Y
INHN
I
Output state control input. High impedance when LOW (oscillator stops).
Power-saving pull-up resistor built-in.
144.6
413.4
XT
I
Amplifier input
171.0
144.6
XTN
O
Amplifier output
579.0
144.6
VDD
–
Supply voltage
618.2
438.6
Q
O
Output. Output frequency determined by internal circuit to one of fO, fO/2, fO/4, fO/8, fO/16,
fO/32. High impedance in standby mode
618.2
705.4
VSS
–
Ground
131.8
718.2
Crystal connection pins.
Crystal is connected between XT and XTN.
NIPPON PRECISION CIRCUITS INC.—2
WF5025 series
BLOCK DIAGRAM
For Fundamental Oscillator (WF5025AL×, WF5025BL1)
VDD VSS
XTN
CG
CD
RD
XT
Rf
1/2
1/2
1/2
1/2
1/2
Q
INHN
INHN = LOW active
For 3rd Overtone Oscillator (WF5025ML×)
VDD VSS
XTN
CG
Rf 1
CD
Cf
RD
XT
Rf 2
Q
INHN
INHN = LOW active
NIPPON PRECISION CIRCUITS INC.—3
WF5025 series
SPECIFICATIONS
Absolute Maximum Ratings
VSS = 0V
Parameter
Symbol
Condition
Rating
Unit
Supply voltage range
VDD
−0.5 to +7.0
V
Input voltage range
VIN
−0.5 to VDD + 0.5
V
Output voltage range
VOUT
−0.5 to VDD + 0.5
V
Operating temperature range
Topr
−40 to +85
°C
Storage temperature range
TSTG
−65 to +150
°C
Output current
IOUT
20
mA
Recommended Operating Conditions
VSS = 0V
Rating*1
Parameter
Operating supply voltage
Symbol
Condition
Operating temperature
Operating frequency*2
typ
max
WF5025AL×
CL ≤ 30pF
2.25
–
3.6
V
WF5025BL1
CL ≤ 30pF
2.25
–
3.6
V
WF5025MLA
f ≤ 80MHz, CL ≤ 30pF
2.25
–
3.6
V
WF5025MLB
f ≤ 100MHz, CL ≤ 30pF
(2.25)
–
(3.6)
V
f ≤ 100MHz, CL ≤ 30pF
2.25
–
3.6
V
f ≤ 133MHz, CL ≤ 15pF
2.25
–
3.6
V
VIN
VSS
–
VDD
V
TOPR
−40
–
+85
°C
WF5025AL×
20
–
50
MHz
WF5025BL1*3
20
–
100
MHz
WF5025MLA
70
–
80
MHz
WF5025MLB*3
(80)
–
(100)
MHz
WF5025MLC*3
90
–
133
MHz
VDD
WF5025MLC
Input voltage
Unit
min
fO
*1. Values in parentheses ( ) are provisional only.
*2. The operating frequency is a yardstick value derived from the crystal used for NPC characteristics authentication. However, the oscillator frequency
band is not guaranteed. Specifically, the characteristics can vary greatly due to crystal characteristics and mounting conditions, so the oscillation characteristics of components must be carefully evaluated.
*3. When 2.5V operation, the ratings of switching characteristics are difference by the frequency or output load. Refer to “Switching Characteristics”.
NIPPON PRECISION CIRCUITS INC.—4
WF5025 series
Electrical Characteristics
WF5025AL× (2.5V operation)
VDD = 2.25 to 2.75V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted.
Rating
Parameter
Symbol
Condition
Unit
min
typ
max
HIGH-level output voltage
VOH
Q: Measurement cct 1, VDD = 2.25V, IOH = 4mA
1.65
1.95
–
V
LOW-level output voltage
VOL
Q: Measurement cct 2, VDD = 2.25V, IOL = 4mA
–
0.3
0.4
V
HIGH-level input voltage
VIH
INHN
0.7VDD
–
–
V
LOW-level input voltage
VIL
INHN
–
–
0.3VDD
V
–
10
µA
IZ
Q: Measurement cct 2, INHN = LOW
VOH = VDD
–
Output leakage current
VOL = VSS
–
–
10
µA
WF5025AL1
–
7
14
mA
WF5025AL2
–
4.5
9
mA
WF5025AL3
–
3.5
7
mA
WF5025AL4
–
2.9
5.8
mA
WF5025AL5
–
2.5
5
mA
WF5025AL6
–
2.4
4.8
mA
–
–
3
µA
2
6
12
MΩ
20
100
200
kΩ
Current consumption
Standby current
INHN pull-up resistance
IDD2
IST
RUP1
Measurement cct 3, load cct 1,
INHN = open, CL = 30pF, f = 50MHz
Measurement cct 3, INHN = LOW
Measurement cct 4
RUP2
Feedback resistance
Rf
Measurement cct 5
50
–
150
kΩ
Oscillator amplifier output
resistance
RD
Design value. A monitor pattern on a wafer is tested.
340
400
460
Ω
6.8
8
9.2
pF
8.5
10
11.5
pF
Built-in capacitance
CG
CD
Design value. A monitor pattern on a wafer is tested.
NIPPON PRECISION CIRCUITS INC.—5
WF5025 series
WF5025AL× (3.0V operation)
VDD = 2.7 to 3.6V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted.
Rating
Parameter
Symbol
Condition
Unit
min
typ
max
HIGH-level output voltage
VOH
Q: Measurement cct 1, VDD = 2.7V, IOH = 4mA
2.3
2.4
–
V
LOW-level output voltage
VOL
Q: Measurement cct 2, VDD = 2.7V, IOL = 4mA
–
0.3
0.4
V
HIGH-level input voltage
VIH
INHN
0.7VDD
–
–
V
LOW-level input voltage
VIL
INHN
–
–
0.3VDD
V
–
10
µA
IZ
Q: Measurement cct 2, INHN = LOW
VOH = VDD
–
Output leakage current
VOL = VSS
–
–
10
µA
WF5025AL1
–
8.5
17
mA
WF5025AL2
–
5.5
11
mA
WF5025AL3
–
4
8
mA
WF5025AL4
–
3.3
6.6
mA
WF5025AL5
–
2.9
5.8
mA
WF5025AL6
–
2.7
5.4
mA
–
–
5
µA
2
4
8
MΩ
15
75
150
kΩ
Current consumption
Standby current
INHN pull-up resistance
IDD2
IST
RUP1
Measurement cct 3, load cct 1,
INHN = open, CL = 30pF, f = 50MHz
Measurement cct 3, INHN = LOW
Measurement cct 4
RUP2
Feedback resistance
Rf
Measurement cct 5
50
–
150
kΩ
Oscillator amplifier output
resistance
RD
Design value. A monitor pattern on a wafer is tested.
340
400
460
Ω
6.8
8
9.2
pF
8.5
10
11.5
pF
Built-in capacitance
CG
CD
Design value. A monitor pattern on a wafer is tested.
NIPPON PRECISION CIRCUITS INC.—6
WF5025 series
WF5025BL1 (2.5V operation)
VDD = 2.25 to 2.75V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted.
Rating
Parameter
Symbol
Condition
Unit
min
typ
max
HIGH-level output voltage
VOH
Q: Measurement cct 1, VDD = 2.25V, IOH = 8mA
1.65
1.95
–
V
LOW-level output voltage
VOL
Q: Measurement cct 2, VDD = 2.25V, IOL = 8mA
–
0.3
0.4
V
HIGH-level input voltage
VIH
INHN
0.7VDD
–
–
V
LOW-level input voltage
VIL
INHN
–
–
0.3VDD
V
–
10
µA
IZ
Q: Measurement cct 2, INHN = LOW
VOH = VDD
–
Output leakage current
VOL = VSS
–
–
10
µA
Current consumption
IDD2
Measurement cct 3, load cct 1, INHN = open, CL = 30pF,
f = 100MHz
–
14
28
mA
Standby current
IST
Measurement cct 3, INHN = LOW
–
–
3
µA
2
6
12
MΩ
20
100
200
kΩ
INHN pull-up resistance
RUP1
Measurement cct 4
RUP2
Feedback resistance
Rf
Measurement cct 5
50
–
150
kΩ
Oscillator amplifier output
resistance
RD
Design value. A monitor pattern on a wafer is tested.
170
200
230
Ω
6.8
8
9.2
pF
8.5
10
11.5
pF
Built-in capacitance
CG
Design value. A monitor pattern on a wafer is tested.
CD
WF5025BL1 (3.0V operation)
VDD = 2.7 to 3.6V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted.
Rating
Parameter
Symbol
Condition
Unit
min
typ
max
HIGH-level output voltage
VOH
Q: Measurement cct 1, VDD = 2.7V, IOH = 8mA
2.3
2.4
–
V
LOW-level output voltage
VOL
Q: Measurement cct 2, VDD = 2.7V, IOL = 8mA
–
0.3
0.4
V
HIGH-level input voltage
VIH
INHN
0.7VDD
–
–
V
LOW-level input voltage
VIL
INHN
–
–
0.3VDD
V
–
10
µA
IZ
Q: Measurement cct 2, INHN = LOW
VOH = VDD
–
Output leakage current
VOL = VSS
–
–
10
µA
Current consumption
IDD2
Measurement cct 3, load cct 1, INHN = open, CL = 30pF,
f = 100MHz
–
19
38
mA
Standby current
IST
Measurement cct 3, INHN = LOW
–
–
5
µA
2
4
8
MΩ
15
75
150
kΩ
INHN pull-up resistance
RUP1
Measurement cct 4
RUP2
Feedback resistance
Rf
Measurement cct 5
50
–
150
kΩ
Oscillator amplifier output
resistance
RD
Design value. A monitor pattern on a wafer is tested.
170
200
230
Ω
6.8
8
9.2
pF
8.5
10
11.5
pF
Built-in capacitance
CG
CD
Design value. A monitor pattern on a wafer is tested.
NIPPON PRECISION CIRCUITS INC.—7
WF5025 series
WF5025ML× (2.5V operation)
VDD = 2.25 to 2.75V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted.
Rating*1
Parameter
Symbol
Unit
Condition
min
typ
max
HIGH-level output voltage
VOH
Q: Measurement cct 1, VDD = 2.25V, IOH = 8mA
1.65
1.95
–
V
LOW-level output voltage
VOL
Q: Measurement cct 2, VDD = 2.25V, IOL = 8mA
–
0.3
0.4
V
HIGH-level input voltage
VIH
INHN
0.7VDD
–
–
V
LOW-level input voltage
VIL
INHN
–
–
0.3VDD
V
–
10
µA
IZ
Q: Measurement cct 2, INHN = LOW
VOH = VDD
–
Output leakage current
VOL = VSS
–
–
10
µA
f = 100MHz
WF5025MLB
–
TBD
TBD
mA
f = 133MHz
WF5025MLC
–
15
30
mA
f = 72MHz
WF5025MLA
–
11
22
mA
f = 100MHz
WF5025MLB
–
TBD
TBD
mA
f = 100MHz
WF5025MLC
–
15
30
mA
–
–
3
µA
2
6
12
MΩ
20
100
200
kΩ
WF5025MLA
3.99
4.7
5.41
kΩ
WF5025MLB
TBD
TBD
TBD
kΩ
WF5025MLC
2.97
3.5
4.03
kΩ
IDD1
Measurement cct 3, load cct 1,
INHN = open, CL = 15pF
IDD2
Measurement cct 3, load cct 1,
INHN = open, CL = 30pF
Current consumption
Standby current
INHN pull-up resistance
IST
RUP1
Measurement cct 3, INHN = LOW
Measurement cct 4
RUP2
AC feedback resistance
Rf1
Design value. A monitor pattern on a wafer is
tested.
DC feedback resistance
Rf2
Measurement cct 5
50
–
150
kΩ
Oscillator amplifier output
resistance
RD
Design value. A monitor pattern on a wafer is tested.
85
100
115
Ω
AC feedback capacitance
Cf
Design value. A monitor pattern on a wafer is tested.
8.5
10
11.5
pF
WF5025MLA
1.70
2
2.30
pF
CG
Design value. A monitor pattern on a wafer is
tested.
WF5025MLB
(1.70)
(2)
(2.30)
pF
WF5025MLC
0.85
1
1.15
pF
WF5025MLA
3.40
4
4.60
pF
WF5025MLB
(3.40)
(4)
(4.60)
pF
WF5025MLC
3.40
4
4.60
pF
Built-in capacitance
CD
Design value. A monitor pattern on a wafer is
tested.
*1. Values in parentheses ( ) are provisional only.
NIPPON PRECISION CIRCUITS INC.—8
WF5025 series
WF5025ML× (3.0V operation)
VDD = 2.7 to 3.6V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted.
Rating*1
Parameter
Symbol
Unit
Condition
min
typ
max
HIGH-level output voltage
VOH
Q: Measurement cct 1, VDD = 2.7V, IOH = 8mA
2.3
2.4
–
V
LOW-level output voltage
VOL
Q: Measurement cct 2, VDD = 2.7V, IOL = 8mA
–
0.3
0.4
V
HIGH-level input voltage
VIH
INHN
0.7VDD
–
–
V
LOW-level input voltage
VIL
INHN
–
–
0.3VDD
V
–
10
µA
IZ
Q: Measurement cct 2, INHN = LOW
VOH = VDD
–
Output leakage current
VOL = VSS
–
–
10
µA
f = 100MHz
WF5025MLB
–
TBD
TBD
mA
f = 133MHz
WF5025MLC
–
20
40
mA
f = 72MHz
WF5025MLA
–
15
30
mA
f = 100MHz
WF5025MLB
–
TBD
TBD
mA
f = 100MHz
WF5025MLC
–
20
40
mA
–
–
5
µA
2
4
8
MΩ
15
75
150
kΩ
WF5025MLA
3.99
4.7
5.41
kΩ
WF5025MLB
TBD
TBD
TBD
kΩ
WF5025MLC
2.97
3.5
4.03
kΩ
IDD1
Measurement cct 3, load cct 1,
INHN = open, CL = 15pF
IDD2
Measurement cct 3, load cct 1,
INHN = open, CL = 30pF
Current consumption
Standby current
INHN pull-up resistance
IST
RUP1
Measurement cct 3, INHN = LOW
Measurement cct 4
RUP2
AC feedback resistance
Rf1
Design value. A monitor pattern on a wafer is
tested.
DC feedback resistance
Rf2
Measurement cct 5
50
–
150
kΩ
Oscillator amplifier output
resistance
RD
Design value. A monitor pattern on a wafer is tested.
85
100
115
Ω
AC feedback capacitance
Cf
Design value. A monitor pattern on a wafer is tested.
8.5
10
11.5
pF
WF5025MLA
1.70
2
2.30
pF
CG
Design value. A monitor pattern on a wafer is
tested.
WF5025MLB
(1.70)
(2)
(2.30)
pF
WF5025MLC
0.85
1
1.15
pF
WF5025MLA
3.40
4
4.60
pF
WF5025MLB
(3.40)
(4)
(4.60)
pF
WF5025MLC
3.40
4
4.60
pF
Built-in capacitance
CD
Design value. A monitor pattern on a wafer is
tested.
*1. Values in parentheses ( ) are provisional only.
NIPPON PRECISION CIRCUITS INC.—9
WF5025 series
Switching Characteristics
WF5025AL× (2.5V operation)
VDD = 2.25 to 2.75V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted.
Rating
Parameter
Output rise time
Symbol
tr1
tr2
Output fall time
tf1
tf2
Output duty cycle*1
Duty1
Duty2
Output disable delay time*2
tPLZ
Output enable delay time*2
tPZL
Condition
Unit
min
typ
max
Measurement cct 3, load cct 1,
0.1VDD to 0.9VDD
CL = 15pF
–
3
6
ns
CL = 30pF
–
5
10
ns
Measurement cct 3, load cct 1,
0.9VDD to 0.1VDD
CL = 15pF
–
3
6
ns
CL = 30pF
–
5
10
ns
Measurement cct 3, load cct 1,
VDD = 2.5V, Ta = 25°C, f = 50MHz
CL = 15pF
45
–
55
%
CL = 30pF
45
–
55
%
–
–
100
ns
–
–
100
ns
Measurement cct 6, load cct 1, VDD = 2.5V, Ta = 25°C,
CL = 15pF
*1. The duty cycle characteristic is checked the sample chips of each production lot.
*2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the
oscillator start-up time has elapsed.
WF5025AL× (3.0V operation)
VDD = 2.7 to 3.6V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted.
Rating
Parameter
Output rise time
Symbol
tr1
tr2
Output fall time
tf1
tf2
Output duty cycle*1
Duty1
Duty2
Output disable delay time*2
tPLZ
Output enable delay time*2
tPZL
Condition
Unit
min
typ
max
Measurement cct 3, load cct 1,
0.1VDD to 0.9VDD
CL = 15pF
–
2.5
5
ns
CL = 30pF
–
4.5
9
ns
Measurement cct 3, load cct 1,
0.9VDD to 0.1VDD
CL = 15pF
–
2.5
5
ns
CL = 30pF
–
4.5
9
ns
Measurement cct 3, load cct 1,
VDD = 3.0V, Ta = 25°C, f = 50MHz
CL = 15pF
45
–
55
%
CL = 30pF
45
–
55
%
–
–
100
ns
–
–
100
ns
Measurement cct 6, load cct 1, VDD = 3.0V, Ta = 25°C,
CL = 15pF
*1. The duty cycle characteristic is checked the sample chips of each production lot.
*2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the
oscillator start-up time has elapsed.
NIPPON PRECISION CIRCUITS INC.—10
WF5025 series
WF5025BL1 (2.5V operation)
VDD = 2.25 to 2.75V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted.
Rating
Parameter
Symbol
tr1
Output rise time
tr2
tr3
tf1
Output fall time
tf2
tf3
Condition
Measurement cct 3, load cct 1,
0.1VDD to 0.9VDD
Measurement cct 3, load cct 1,
0.2VDD to 0.8VDD
Measurement cct 3, load cct 1,
0.9VDD to 0.1VDD
Measurement cct 3, load cct 1,
0.8VDD to 0.2VDD
Duty1
Output duty cycle*1
Duty2
Measurement cct 3, load cct 1,
VDD = 2.5V, Ta = 25°C
Duty3
Output disable delay time*2
tPLZ
Output enable delay time*2
tPZL
Unit
min
typ
max
CL = 15pF
–
2
4
ns
CL = 30pF
–
3
6
ns
CL = 30pF
–
2.5
5
ns
CL = 15pF
–
2
4
ns
CL = 30pF
–
3
6
ns
CL = 30pF
–
2.5
5
ns
CL = 15pF
f = 100MHz
45
–
55
%
CL = 30pF
f = 80MHz
45
–
55
%
CL = 30pF
f = 100MHz
40
–
60
%
–
–
100
ns
–
–
100
ns
Measurement cct 6, load cct 1, VDD = 2.5V, Ta = 25°C,
CL = 15pF
*1. The duty cycle characteristic is checked the sample chips of each production lot.
*2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the
oscillator start-up time has elapsed.
WF5025BL1 (3.0V operation)
VDD = 2.7 to 3.6V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted.
Rating
Parameter
Output rise time
Symbol
tr1
tr2
Output fall time
tf1
tf2
Output duty cycle*1
Duty1
Duty2
Output disable delay time*2
tPLZ
Output enable delay time*2
tPZL
Condition
Unit
min
typ
max
Measurement cct 3, load cct 1,
0.1VDD to 0.9VDD
CL = 15pF
–
1.5
3
ns
CL = 30pF
–
2.5
5
ns
Measurement cct 3, load cct 1,
0.9VDD to 0.1VDD
CL = 15pF
–
1.5
3
ns
CL = 30pF
–
2.5
5
ns
Measurement cct 3, load cct 1,
VDD = 3.0V, Ta = 25°C, f = 100MHz
CL = 15pF
45
–
55
%
CL = 30pF
45
–
55
%
–
–
100
ns
–
–
100
ns
Measurement cct 6, load cct 1, VDD = 3.0V, Ta = 25°C,
CL = 15pF
*1. The duty cycle characteristic is checked the sample chips of each production lot.
*2. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the
oscillator start-up time has elapsed.
NIPPON PRECISION CIRCUITS INC.—11
WF5025 series
WF5025ML× (2.5V operation)
VDD = 2.25 to 2.75V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted.
Rating*1
Parameter
Output rise time
Symbol
tr1
tr2
Output fall time
tf1
tf2
Duty1
Condition
Output disable delay time*3
tPLZ
Output enable delay time*3
tPZL
typ
max
Measurement cct 3, load cct 1,
0.1VDD to 0.9VDD
CL = 15pF
–
2
4
ns
CL = 30pF
–
3
6
ns
Measurement cct 3, load cct 1,
0.9VDD to 0.1VDD
CL = 15pF
–
2
4
ns
CL = 30pF
–
3
6
ns
f = 72MHz
WF5025MLA
45
–
55
%
f = 100MHz
WF5025MLB
(45)
–
(55)
%
f = 133MHz
WF5025MLC
45
–
55
%
f = 72MHz
WF5025MLA
45
–
55
%
f = 100MHz
WF5025MLB
(40)
–
(60)
%
f = 100MHz
WF5025MLC
40
–
60
%
–
–
100
ns
–
–
100
ns
Measurement cct 3,
load cct 1, VDD = 2.5V,
Ta = 25°C, CL = 15pF
Output duty cycle*2
Duty2
Unit
min
Measurement cct 3,
load cct 1, VDD = 2.5V,
Ta = 25°C, CL = 30pF
Measurement cct 6, load cct 1, VDD = 2.5V, Ta = 25°C,
CL = 15pF
*1. Values in parentheses ( ) are provisional only.
*2. The duty cycle characteristic is checked the sample chips of each production lot.
*3. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the
oscillator start-up time has elapsed.
WF5025ML× (3.0V operation)
VDD = 2.7 to 3.6V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted.
Rating*1
Parameter
Output rise time
Symbol
tr1
tr2
Output fall time
tf1
tf2
Duty1
Output duty cycle*2
Duty2
tPLZ
Output enable delay time*3
tPZL
min
typ
max
Measurement cct 3, load cct 1,
0.1VDD to 0.9VDD
CL = 15pF
–
1.5
3
ns
CL = 30pF
–
2.5
5
ns
Measurement cct 3, load cct 1,
0.9VDD to 0.1VDD
CL = 15pF
–
1.5
3
ns
CL = 30pF
–
2.5
5
ns
f = 72MHz
WF5025MLA
45
–
55
%
f = 100MHz
WF5025MLB
(45)
–
(55)
%
f = 133MHz
WF5025MLC
45
–
55
%
f = 72MHz
WF5025MLA
45
–
55
%
f = 100MHz
WF5025MLB
(45)
–
(55)
%
WF5025MLC
45
–
55
%
–
–
100
ns
–
–
100
ns
Measurement cct 3,
load cct 1, VDD = 3.0V,
Ta = 25°C, CL = 15pF
Measurement cct 3,
load cct 1, VDD = 3.0V,
Ta = 25°C, CL = 30pF
Measurement cct 3, load cct 1, VDD = 3.3V,
Ta = 25°C, CL = 30pF, f = 100MHz
Output disable delay time*3
Unit
Condition
Measurement cct 6, load cct 1, VDD = 3.0V, Ta = 25°C,
CL = 15pF
*1. Values in parentheses ( ) are provisional only.
*2. The duty cycle characteristic is checked the sample chips of each production lot.
*3. Oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output is not resumed until after the
oscillator start-up time has elapsed.
NIPPON PRECISION CIRCUITS INC.—12
WF5025 series
FUNCTIONAL DESCRIPTION
Standby Function
When INHN goes LOW, the oscillator stops and the oscillator output on Q becomes high impedance.
Version
INHN
WF5025AL×
HIGH (or open)
WF5025BL1, ML×
WF5025AL×, BL1, ML×
Q
Oscillator
Any fO, fO/2, fO/4, fO/8, fO/16 or fO/32 output frequency
Normal operation
fO
LOW
High impedance
Stopped
Power-save Pull-up Resistor
The INHN pull-up resistance changes in response to the input level (HIGH or LOW). When INHN goes LOW
(standby state), the pull-up resistance becomes large to reduce the current consumption during standby.
NIPPON PRECISION CIRCUITS INC.—13
WF5025 series
MEASUREMENT CIRCUITS
Measurement cct 1
Measurement cct 4
C1
Signal
Generator
VDD
XT
VDD
XT
Q
XTN
INHN
R1
Q
VSS
XTN
INHN
R2
VSS
V
VPR
VDD
VOH
0V
Q output
2Vp-p, 10MHz sine wave input signal
C1: 0.001µF
R1: 50Ω
R2: 5025AL×
: 412Ω (2.5V operation)
575Ω (3.0V operation)
5025BL1, ML× : 206Ω (2.5V operation)
287Ω (3.0V operation)
IPR
RUP1 =
VDD
IPR
(VPR = V SS)
RUP2 = VDD VPR
IPR
(VPR = 0.7VDD)
A
Measurement cct 5
Measurement cct 2
XT
VDD
Rf =
Q
XTN
INHN
IZ, IOL
XT
VDD
IZ
VSS
V
VDD
IRf
A
A
Q
XTN
INHN
Rf 2 =
VSS
VDD
IRf
IRf
VOH
VOL
Measurement cct 6
C1
Signal
Generator
Measurement cct 3
Q
R1
A
XT
VDD
XT
XTN
INHN
VSS
IDD1, IDD2
IST
VDD
X'tal
Q
XTN
INHN
VSS
2Vp-p, 10MHz sine wave input signal
C1: 0.001µF
R1: 50Ω
Load cct 1
Q output
CL
(Including probe
capacitance)
NIPPON PRECISION CIRCUITS INC.—14
WF5025 series
Switching Time Measurement Waveform
Output duty level, tr, tf
0.9VDD
0.8VDD
0.9VDD
0.8VDD
Q output
0.2VDD
0.1VDD
0.2VDD
0.1VDD
TW
tr3
DUTY measurement
voltage (0.5V DD )
tf3
tr1,tr2
tf1,tf2
Output duty cycle
DUTY measurement
voltage (0.5V DD)
Q output
TW
DUTY= TW/ T
T
100 (%)
Output Enable/Disable Delay
when the device is in standby, the oscillator stops. When standby is released, the oscillator starts and stable
oscillator output occurs after a short delay.
VIH
INHN
VIL
tPLZ
tPZL
INHN input waveform tr = tf
10ns
Q output
NIPPON PRECISION CIRCUITS INC.—15
WF5025 series
Please pay your attention to the following points at time of using the products shown in this document.
The products shown in this document (hereinafter “Products”) are not intended to be used for the apparatus that exerts harmful influence on
human lives due to the defects, failure or malfunction of the Products. Customers are requested to obtain prior written agreement for such
use from NIPPON PRECISION CIRCUITS INC. (hereinafter “NPC”). Customers shall be solely responsible for, and indemnify and hold NPC
free and harmless from, any and all claims, damages, losses, expenses or lawsuits, due to such use without such agreement. NPC reserves
the right to change the specifications of the Products in order to improve the characteristic or reliability thereof. NPC makes no claim or
warranty that the contents described in this document dose not infringe any intellectual property right or other similar right owned by third
parties. Therefore, NPC shall not be responsible for such problems, even if the use is in accordance with the descriptions provided in this
document. Any descriptions including applications, circuits, and the parameters of the Products in this document are for reference to use the
Products, and shall not be guaranteed free from defect, inapplicability to the design for the mass-production products without further testing
or modification. Customers are requested not to export or re-export, directly or indirectly, the Products to any country or any entity not in
compliance with or in violation of the national export administration laws, treaties, orders and regulations. Customers are requested
appropriately take steps to obtain required permissions or approvals from appropriate government agencies.
NIPPON PRECISION CIRCUITS INC.
15-6, Nihombashi-kabutocho, Chuo-ku,
Tokyo 103-0026, Japan
Telephone: +81-3-6667-6601
Facsimile: +81-3-6667-6611
http://www.npc.co.jp/
Email: [email protected]
NC0315CE
2005.11
NIPPON PRECISION CIRCUITS INC.—16