NTE NTE553

NTE553
Schottky Barrier Diode
Description:
The NTE553 is a silicon schottky barrier diode in a DO35 style package for use in UHF and VHF
switching applications.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –35V
Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –20° to + 60°C
Storage Temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –45° to + 125°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Symbol
Parameter
Reverse Breakdown Voltage
Test Conditions
Min
Typ
Max
Unit
V(BR)R
IR = –10µA
–35
–
–
V
Reverse Leakage Current
IR
VR = –25V
–
–
–0.1
µA
Forward Voltage
VF
IF = 10mA
–
–
1.0
V
Diode Capacitance
CT
VR = –6V, f = 1MHZ
–
–
1.2
pf
Series Resistance
RS
IF = 2mA, f = 100MHZ
–
–
1.2
Ω
Series Inductance
LS
f = 250MHZ
–
3
–
nH
1.000
(25.4)
Min
.200 (5.08)
Max
.022 (0.509) Dia Max
.090 (2.28) Dia Max
Color Band Denotes Cathode