Agilent MGA-545P8 1–7 GHz Medium Power Amplifier Data Sheet Description Agilent’s MGA-545P8 is an economical, low current, medium power, easy-to-use GaAs MMIC amplifier that offers excellent power output at 5.8 GHz. Although optimized for 5.8 GHz applications, the MGA-545P8 is suitable for other applications in the 1 to 7 GHz frequency range. With the addition of a simple input match, the MGA-545P8 offers a small signal gain of 11.5 dB, a saturated power output of 22 dBm and a saturated gain of 9.5 dB at PIN 8 PIN 7 (OUT) PIN 6 PIN 5 SOURCE (THERMAL/RF GND) Pin Connections and Package Marking 5.8 GHz. The MGA-545P8 has a nominal current consumption of 92 mA in saturated mode and 135 mA in linear mode at a device voltage of 3.3 V with power added efficiency of 46% in saturated mode. The MGA-545P8 is housed in the 2X2 mm-8L LPCC package. This package offers good thermal dissipation and very good high frequency characteristics making it appropriate for medium power applications through 7 GHz. Simplified Schematic PIN 1 PIN 2 (IN) BIAS PIN 3 PIN 4 FET INPUT BOTTOM VIEW PIN 1 IN PIN 3 PIN 8 4Tx PIN 4 OUT PIN 6 PIN 5 TOP VIEW Note: Package marking provides orientation and identification. “4T”= Device Code “x” = Date code indicates the month of manufacture. OUTPUT & Vd Specifications • 3.3 V, 92 mA, 5.825 GHz at saturation mode • 22 dBm saturated power across 1-7 GHz • 9.5 dB gain • 46% PAE • 3.3 V, 135 mA, 5.825 GHz at linear mode • 11.5 dB small signal gain • Pout = 16 dBm at 5.6% EVM • 34 dBm OIP3 at 2.7 V Features • Unconditionally stable • Single +3.3 V operation • Small package size – 2.0 x 2.0 x 0.75 mm3 • Point MTTF > 300 years [2] • MSL-1 and Pb-free and Halogen-free • Tape-and-reel packaging option available Applications The MGA-545P8 is ideal for use as driver amplifier or power amplifier in: • 3-4 GHz fixed wireless access (WLL) • 5-6 GHz fixed wireless access (HiperLAN/UNII) • 5-6 GHz WLAN 802.11a NIC and AP • Other applications in the 1-7 GHz frequency range RF GND Notes: 1. Enhancement mode technology employs a single positive Vgs, eliminating the need of negative gate voltage associated with conventional depletion mode devices. 2. Refer to reliability datasheet for detailed MTTF data. 3. Conform to JEDEC reference outline MO229 for DRP-N. MGA-545P8 Absolute Maximum Ratings[1] Parameter Units Absolute Maximum Vd Device Voltage, RF output to ground V 5.0 Pin CW RF Input Power dBm 20 θjc Thermal Resistance [2] °C/W 124 Pdiss Total Power Dissipation[3] W 0.8 Tj Junction Temperature °C 150 TSTG Storage Temperature °C –65 to 150 Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. Thermal resistance measured using 150°C Liquid Crystal Measurement Technique. 3. Board (package belly) temperature Tb is 25°C. Derate 8 mW/°C for Tb > 51°C. 0.01 µF 1000 pF VDD 10 pF 50 Ω RF INPUT 10 pF 1 8 2 7 4Tx 3 6 4 5 4.7 nH 12 pF 50 Ω RF OUTPUT OPEN-CIRCUITED STUB (34 mil x 72 mil) Figure 1. Production test circuit. This circuit represents a match for maximum gain and saturated power. 0.01 µF 12 pF 1000 pF 10 pF 4.7 nH CONTACTOR 10 pF Figure 2. Close-up of production test board. Rogers 4350 Er = 3.48 ± 0.05, thickness = 10 mils. 2 MGA-545P8 Electrical Specifications Tc = 25˚C, Vd = 3.3 V, unless otherwise noted Symbol Parameter and Test Condition Gtest_sat Gain in test circuit at saturation For all frequencies refer to note [3] unless noted otherwise Gtest_ss Gain in test circuit at small signal For all frequencies refer to note [3] unless noted otherwise Units f = 1.0 GHz f = 2.0 GHz f = 3.0 GHz f = 4.0 GHz f = 5.0 GHz f = 5.825 GHz[1] f = 6.0 GHz dB f = 1.0 GHz f = 2.0 GHz f = 3.0 GHz f = 4.0 GHz f = 5.0 GHz f = 5.825 GHz[1] f = 6.0 GHz dB Min. 8.5 10.5 Typ. 20.0 16.3 13.4 11.6 10.05 9.5 8.7 22.4 18.6 15.9 13.5 12 11.5 11.3 Max. 10.5 13.8 Psat Pout at 2.5 dB gain compression f = 5.825 GHz[1] dBm 21.5 22 – Ids_sat Drain Current at saturation f = 5.825 GHz[1] mA 80 92 115 Idss Drain Current at small signal f = 5.825 GHz[1] mA 95 135 155 P1dB Output Power at 1 dB compression point For all frequencies refer to note [3] unless noted otherwise f = 1.0 GHz f = 2.0 GHz f = 3.0 GHz f = 4.0 GH f = 5.0 GHz f = 5.825 GHz[2] f = 6.0 GHz dBm 21.5 21.7 21.3 21.8 21.2 21.0 20.6 PAE Power Added Efficiency at Psat[4] For all frequencies refer to note [3] unless noted otherwise f = 1.0 GHz f = 2.0 GHz f = 3.0 GHz f = 4.0 GHz f = 5.0 GHz f = 5.825 GHz[1] f = 6.0 GHz % 46.3 46.0 48 44 45 46 47 40 OIP3 Output Third Order Intercept Point [2.7 V] f = 5.725 GHz[1] dBm EVM Error Vector Magnitude Pout = 16 dBm; 54 Mbps data rate f = 5.725 GHz[2] % 5.6 NF Noise Figure For all frequencies refer to note [3] unless noted otherwise. f = 1.0 GHz f = 2.0 GHz f = 3.0 GHz f = 4.0 GHz f = 5.0 GHz f = 5.825 GHz[2] f = 6.0 GHz dB 2.6 2.7 2.9 3.3 3.6 4.4 5.2 31 34 – Notes: 1. Measurements made on a fixed tuned production test board (figure 1), which was optimized for gain and saturated power. Excess circuit losses had been de-embedded from actual measurement. Typical data based on at least 500 parts sample size from 3 wafer lots. Future wafers allocated to this product may have nominal values anywhere within the upper and lower spec limits. 2. Measurement was taken on demo board at which it was tuned for maximum gain and saturated power. Refer to application note. 3. Measurement was done in a 50 Ω microstrip line, which was tuned for maximum gain and saturated power for each frequency with external double stub tuners. − 4. Power Added Efficiency at Psat is calculated using the following formula: η = Pout = Psat in watts pa Vdd × Id Pin = Input drive power in watts Vdd = 3.3 V Id = Ids_sat in Ampere 3 MGA-545P8 Typical Performance, Tc = 25°C, Vd = 3.3 V unless stated otherwise. 24 22 25 22 23 20 21 18 16 14 12 10 1 2 3 4 5 6 17 15 13 16 14 12 11 10 9 8 7 7 2.7 V 3.0 V 3.3 V 4.0 V 18 –40°C 25°C 85°C 19 G-SAT (dB) 2.7 V 3.0 V 3.3 V 4.0 V SSGAIN (dB) SSGAIN (dB) 20 1 2 FREQUENCY (GHz) 3 4 5 6 6 1 7 2 Figure 3. Small signal gain vs. frequency and voltage[1,5]. Figure 4. Small signal gain vs. frequency and temperature[1,5]. 26 3 4 5 6 7 FREQUENCY (GHz) FREQUENCY (GHz) Figure 5. Saturated gain vs. frequency and voltage[2,3,5]. 24 26 24 24 22 20 2.7 V 3.0 V 3.3 V 4.0 V 18 2 3 4 5 6 22 –40°C 25°C 85°C 21 20 7 1 2 FREQUENCY (GHz) 60 6 55 5 6 18 2.7 V 3.0 V 3.3 V 4.0 V 14 1 7 2 3 4 5 6 7 FREQUENCY (GHz) Figure 8. Output power at 1 dB gain compression vs. frequency and voltage[2,5]. 35 34 33 4 NF (dB) PAE (%) 5 Figure 7. Saturated power vs. frequency and temperature[2,3,5]. 50 45 40 3 2 35 30 2 3 4 5 2.7 V 3.0 V 3.3 V 4.0 V 1 6 0 1 FREQUENCY (GHz) Figure 9. Power added efficiency vs. frequency and voltage[2,3,5]. 4 4 20 FREQUENCY (GHz) Figure 6. Saturated power vs. frequency and voltage[2,3,5]. 25 1 3 22 16 OUTPUT IP3 (dBm) 16 1 OP1dB (dBm) P_sat (dBm) P-SAT (dBm) 23 7 2.7 V 3.0 V 3.3 V 4.0 V 2 3 4 5 6 FREQUENCY (GHz) Figure 10. Noise figure vs. frequency and voltage[2,5]. 32 31 30 29 28 5.725 GHz 27 26 7 25 2.3 2.6 2.9 3.2 3.5 3.8 4.1 4.4 VOLTAGE (V) Figure 11. OIP3 vs. voltage at 5.725 GHz[4,5]. 150 155 110 135 125 115 105 2.7 V 3.0 V 3.3 V 4.0 V 95 85 75 0 2 4 6 8 10 12 140 100 130 120 2.7 3.3 3.6 3.9 –40°C 25°C 85°C 4.2 VOLTAGE (V) Pin (dBm) Figure 12. Device current vs. Pin and voltage[4,5]. 70 2.4 2.7 3.0 3.3 3.6 3.9 4.2 VOLTAGE (V) Figure 13. Id vs. voltage and temperature (no RF drive). Figure 14. Saturated Id vs. voltage and temperature[3,4]. 10 12 2.7 V 3.0 V 3.3 V 4.0 V 9 2.7 V 3.0 V 3.3 V 4.0 V 8 EVM (64QAM;%) 10 EVM (64QAM;%) 3.0 90 80 –40°C 25°C 85°C 110 100 2.4 14 Idsat (mA) DEVICE CURRENT (mA) DEVICE CURRENT (mA) 145 8 6 4 7 6 5 4 3 2 2 1 0 -10 -5 0 5 10 15 20 Pout (dBm) Figure 15. EVM(64QAM) vs. Pout and voltage at 5.725 GHz[4]. 0 -20 -15 -10 -5 0 5 10 Pin (dBm) Figure 16. EVM(64QAM) vs. Pin and voltage at 5.725 GHz[4]. Notes: 1. Measurement was done in a 50 Ω microstrip line with input and output tuned for maximum gain using double stub-tuners. 2. Measurement was done in a 50 Ω microstrip line with input tuned for gain and output tuned for maximum Psat using double-stub tuners. 3. Measured at 2.5 dB gain compression. 4. Measurement at 5.825 GHz were made on a fixed tuned demo board that was tuned for maximum saturated output power and maximum gain. 5. Circuit losses have been de-embedded from actual measurement. 5 MGA-545P8 Typical Scattering Parameters Tc = 25°C, Vd = 3.3 V, Zo = 50 Ω Freq. GHz 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.5 1.9 2.0 2.4 3.0 4.0 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 6.5 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 6 S11 Mag 0.11 0.17 0.25 0.30 0.35 0.40 0.44 0.47 0.50 0.52 0.59 0.61 0.62 0.61 0.62 0.54 0.38 0.34 0.30 0.26 0.21 0.15 0.11 0.08 0.06 0.06 0.10 0.43 0.69 0.87 0.91 0.93 0.90 0.95 0.96 0.93 0.91 0.96 0.95 0.96 Ang -140.5 -132.4 -133.4 -137.1 -139.0 -144.4 -149.7 -153.9 -158.5 -162.8 179.0 166.5 163.8 153.8 139.3 116.5 87.9 83.6 79.2 75.1 70.9 71.0 82.8 99.7 115.1 161.8 -161.5 -166.1 165.0 117.4 97.6 77.7 63.6 50.7 41.1 30.7 27.9 22.0 14.4 8.0 dB 24.3 24.0 23.7 23.3 22.9 22.4 21.9 21.4 20.9 20.4 18.2 16.7 16.2 14.9 13.5 11.9 11.4 11.3 11.3 11.2 11.1 11.1 10.9 10.9 10.9 10.8 10.8 9.7 6.2 -3.7 -19.0 -19.3 -14.1 -12.1 -12.2 -12.4 -13.1 -12.9 -13.6 -13.6 S21 Mag 16.33 15.85 15.34 14.65 13.96 13.26 12.51 11.80 11.11 10.51 8.09 6.81 6.47 5.58 4.71 3.95 3.70 3.67 3.66 3.62 3.61 3.59 3.53 3.51 3.49 3.48 3.46 3.05 2.05 0.66 0.11 0.11 0.20 0.25 0.25 0.24 0.22 0.23 0.21 0.21 Ang 169.7 160.1 151.5 144.1 136.5 131.2 124.6 119.2 113.9 109.3 89.5 78.0 75.8 65.4 53.0 28.6 0.5 -3.4 -7.2 -11.1 -15.5 -19.6 -23.0 -26.0 -29.2 -33.2 -39.1 -71.8 -104.8 -149.2 -172.2 -6.4 -20.6 -38.3 -54.0 -59.4 -66.6 -79.5 -88.3 -88.0 dB -31.9 -31.9 -31.9 -31.9 -31.8 -31.8 -31.8 -31.6 -31.6 -31.4 -30.6 -29.9 -29.7 -28.9 -27.6 -25.5 -23.5 -23.4 -23.3 -23.2 -23.1 -23.1 -23.0 -22.9 -22.8 -22.9 -23.0 -25.4 -32.3 -33.2 -26.8 -23.9 -22.9 -21.8 -21.4 -21.1 -20.6 -20.4 -19.8 -19.1 S12 Mag 0.025 0.025 0.026 0.025 0.026 0.026 0.026 0.026 0.026 0.027 0.029 0.032 0.033 0.036 0.042 0.053 0.067 0.068 0.069 0.069 0.070 0.070 0.071 0.072 0.073 0.072 0.071 0.054 0.024 0.022 0.046 0.064 0.072 0.081 0.085 0.088 0.093 0.096 0.103 0.111 Ang 0.0 -0.7 -0.6 1.0 2.4 3.7 4.7 5.8 7.2 7.8 13.2 15.6 16.2 18.2 17.6 10.8 -6.5 -9.5 -12.3 -16.3 -18.8 -22.9 -25.6 -27.7 -30.4 -33.4 -38.4 -70.7 -106.7 55.7 38.8 18.8 8.2 -5.1 -15.7 -25.2 -29.4 -40.0 -44.6 -56.1 Mag 0.04 0.04 0.04 0.04 0.06 0.07 0.07 0.07 0.07 0.08 0.10 0.11 0.11 0.12 0.14 0.19 0.23 0.24 0.25 0.26 0.27 0.28 0.29 0.29 0.30 0.34 0.36 0.47 0.50 0.46 0.42 0.41 0.40 0.42 0.46 0.49 0.53 0.57 0.61 0.62 S22 Ang 3.9 -1.4 -2.7 -4.6 -10.5 -13.2 -17.5 -22.9 -28.3 -31.7 -48.5 -60.5 -67.5 -73.8 -74.6 -89.2 -98.4 -99.5 -100.6 -101.8 -103.9 -106.9 -108.7 -109.9 -108.9 -109.1 -118.8 -136.8 -157.6 172.0 156.3 143.1 129.3 117.2 102.6 87.6 80.2 70.3 62.9 50.3 K Factor 1.40 1.40 1.39 1.40 1.40 1.38 1.39 1.38 1.40 1.40 1.42 1.45 1.49 1.56 1.54 1.63 1.68 1.71 1.75 1.80 1.83 1.88 1.91 1.91 1.91 1.90 1.91 2.20 4.22 6.38 13.14 8.26 5.90 2.17 1.72 3.00 3.56 1.74 1.84 1.55 MGA-545P8 Typical Noise Parameters at Tc = 25°C, Vd = 3.3 V Frequency Fmin Gopt GHz dB Mag Ang Rn/50 Ω 1.0 2.1 0.46 –144 0.15 2.0 2.4 0.44 –133 0.20 3.0 2.5 0.44 –123 0.27 4.0 2.9 0.39 –100 0.43 5.0 3.2 0.26 –77 0.51 6.0 3.5 0.13 –77 0.48 7.0 4.4 0.38 –158 0.28 Device Models Refer to Agilent’s Web Site www.agilent.com/view/rf Ordering Information Part Number No. of Devices Container MGA-545P8-TR1 3000 7" Reel MGA-545P8-TR2 10000 13" Reel MGA-545P8-BLK 100 Antistatic Bag 2x2 LPCC (JEDEC DFP_N) Package Dimensions D1 D P PIN 1 PIN 1 2 R E1 e 3 b DIMENSIONS 8 1 4Tx 7 E 6 5 4 L BOTTOM VIEW TOP VIEW A A A2 A1 7 END VIEW SIDE VIEW SYMBOL A MIN. 0.7 NOM. 0.75 MAX. 0.8 A1 A2 b 0 0.02 0.203 REF 0.25 0.05 0.225 0.275 D D1 E E1 e 1.9 0.65 1.9 1.45 2 0.8 2 1.6 0.50 BSC 2.1 0.95 2.1 1.75 P L 0.20 0.35 0.25 0.40 0.30 0.45 PCB Land Pattern and Stencil Design 2.80 (110.24) 2.72 (107.09) 0.70 (27.56) 0.63 (24.80) 0.25 (9.84) 0.22 (8.86) 0.25 (9.84) PIN 1 ∅0.20 (∅7.87) 0.32 (12.79) PIN 1 0.50 (19.68) 0.50 (19.68) 1.60 (62.99) 1.54 (60.61) 0.25 (9.74) 0.28 (10.83) SOLDER MASK 0.80 (31.50) RF TRANSMISSION LINE 0.72 (28.35) 0.60 (23.62) 0.63 (24.80) 0.15 (5.91) NOTE: DIMENSIONS ARE IN MILLIMETERS 0.55 (21.65) PCB LAND PATTERN (TOP VIEW) STENCIL LAYOUT (TOP VIEW) Device Orientation REEL 4 mm CARRIER TAPE 4Tx USER FEED DIRECTION COVER TAPE 8 8 mm 4Tx 4Tx 4Tx Tape Dimensions P P0 P2 D E F W D1 Tt t1 10°MAX. K0 B0 A0 DESCRIPTION 9 10°MAX. SYMBOL SIZE (mm) SIZE (INCH) CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A0 B0 K0 P D1 2.30 ± 0.05 2.30 ± 0.05 1.00 ± 0.05 4.00 ± 0.10 1.00 ± 0.25 0.091 ± 0.004 0.091 ± 0.004 0.039 ± 0.002 0.157 ± 0.004 0.039 ± 0.002 PERFORATION DIAMETER PITCH POSITION D P0 E 1.50 ± 0.10 4.00 ± 0.10 1.75 ± 0.10 0.060 ± 0.004 0.157 ± 0.004 0.069 ± 0.004 CARRIER TAPE WIDTH W 0.315 ± 0.012 0.315 ± 0.004 0.010 ± 0.0008 THICKNESS t1 8.00 + 0.30 8.00 – 0.10 0.254 ± 0.02 COVER TAPE WIDTH TAPE THICKNESS C Tt 5.4 ± 0.10 0.062 ± 0.001 0.205 ± 0.004 0.0025 ± 0.0004 DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) F P2 3.50 ± 0.05 2.00 ± 0.05 0.138 ± 0.002 0.079 ± 0.002 www.agilent.com/semiconductors For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (408) 654-8675 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (+65) 6271 2451 India, Australia, New Zealand: (+65) 6271 2394 Japan: (+81 3) 3335-8152(Domestic/International), or 0120-61-1280(Domestic Only) Korea: (+65) 6271 2194 Malaysia, Singapore: (+65) 6271 2054 Taiwan: (+65) 6271 2654 Data subject to change. Copyright © 2003 Agilent Technologies, Inc. January 10, 2003 5988-8404EN