AGILENT ABA-52563-TR2G

Agilent ABA-52563
3.5 GHz Broadband Silicon
RFIC Amplifier
Data Sheet
Features
• Operating frequency: DC ~ 3.5 GHz
• 21.5 dB gain
• VSWR < 2.0 throughout operating
frequency
• 9.8 dBm output P1dB
Description
Agilent’s ABA-52563 is an
economical, easy-to-use, internally 50-ohm matched silicon
monolithic amplifier that offers
excellent gain and flat broadband
response from DC to 3.5 GHz.
Packaged in an ultraminiature
industry-standard SOT-363
package, it requires half the board
space of a SOT-143 package.
ABA-52563 is fabricated using
Agilent’s HP25 silicon bipolar
process, which employs a doublediffused single polysilicon
process with self-aligned submicron emitter geometry. The
process is capable of simultaneous high fT and high NPN
breakdown (25 GHz fT at 6V
BVCEO). The process utilizes
industry standard device oxide
isolation technologies and
submicron aluminum multilayer
interconnect to achieve superior
performance, high uniformity,
and proven reliability.
• Unconditionally stable
• Single 5V supply (Id = 35 mA)
• Lead-free option available
Applications
• Amplifier for cellular, cordless,
special mobile radio, PCS, ISM,
wireless LAN, DBS, TVRO, and TV
tuner applications
Pin Connections and
Package Marking
GND 1
GND 2
2Hx
At 2 GHz, the ABA-52563 offers a
small-signal gain of 21.5 dB,
output P1dB of 9.8 dBm and
19.9 dBm output third order
intercept point. It is suitable for
use as buffer amplifiers for
wideband applications. They are
designed for low cost gain blocks
in cellular applications, DBS
tuners, LNB and other wireless
communications systems.
• 3.3 dB noise figure
Surface Mount Package
SOT-363/SC70
Input
Output
& Vcc
GND 3
Vcc
Note:
Top View. Package marking provides orientation
and identification. “x” is character to identify
date code.
Simplified Schematic
Vcc
RF
Output
& Vcc
RF
Input
Ground 2
Ground 3
Ground 1
ABA-52563 Absolute Maximum Ratings [1]
Symbol
Parameter
Units
Absolute Max.
Vcc
Device Voltage, RF output to ground (T = 25°C)
V
+7
Pin
CW RF Input Power (Vcc = 5V)
dBm
+20
Pdiss
Total Power Dissipation [3]
W
0.4
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
Thermal Resistance[2] (Vcc = 5V):
θjc = 106°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using 150°C
Liquid Crystal Measurement Technique.
3. Board (package belly) temperature, Tb, is
25°C. Derate 3.5 mW/°C for Tb > 109°C.
Electrical Specifications
Tc = +25°C, Zo = 50 Ω, Pin = -30 dBm, Vcc = 5V, Freq = 2 GHz, unless stated otherwise.
Symbol
Parameter and Test Condition
Gp[1]
Power Gain (|S21| )
∆Gp
Power Gain Flatness,
NF[1]
P1dB[1]
OIP3[1]
2
VSWRin[1]
VSWRout
[1]
f = 0.1 ~ 2.5 GHz
f = 0.1 ~ 3.5 GHz
Units
Min.
Typ.
dB
20
21.5
Max.
Std Dev.
0.2
dB
0.5
2.1
Noise Figure
dB
3.3
Output Power at 1dB Gain Compression
dBm
9.8
0.15
Output Third Order Intercept Point
dBm
19.9
0.18
Input VSWR
1.2
Output VSWR
1.4
Icc[1]
Device Current
mA
35
td[1]
Group Delay
ps
150
4
43
0.12
0.5
Notes:
1. Measurements taken on 50Ω test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard
deviation and typical data based on at least 500 parts sample size from 6 wafer lots. Future wafers allocated to this product may have nominal values
anywhere within the upper and lower spec limits.
Cblock
RF Output
2Hx
RFC
RF Input
Vcc
Cblock
Cbypass
Figure 1. ABA-52563 Production Test Circuit.
2
ABA-52563 Typical Performance
23
22
22
21
21
20
4.5
4
NF (dB)
23
GAIN (dB)
GAIN (dB)
Tc = +25°C, Zo = 50Ω, Vcc = 5V unless stated otherwise.
20
3
19
19
4.5V
5V
5.5V
18
-40°C
+25°C
+85°C
18
0
0.5
1
1.5
2
2.5
3
3.5
2
0
4
4.5V
5V
5.5V
2.5
17
17
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 2. Gain vs. Frequency and Voltage.
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
Figure 3. Gain vs. Frequency and Temperature.
Figure 4. Noise Figure vs. Frequency and
Voltage.
14
6
16
12
5
12
4
3
10
P1dB (dBm)
P1dB (dBm)
NF (dB)
3.5
8
8
6
-40°C
+25°C
+85°C
2
0
0.5
1
1.5
2
2.5
3
3.5
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency and
Temperature.
4
-40°C
+25°C
+85°C
4
0
2
1
3
4.5V
5V
5.5V
4
0
0.5
1
1.5
2
2.5
3
3.5
FREQUENCY (GHz)
Figure 6. Output Power for 1 dB Gain
Compression vs. Frequency and Voltage.
4
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
Figure 7. Output Power for 1 dB Gain
Compression vs. Frequency and Temperature.
ABA-52563 Typical Performance, continued
Tc = +25°C, Zo = 50Ω, Vcc = 5V unless stated otherwise.
40
35
35
30
25
OIP3 (dBm)
OIP3 (dBm)
30
25
20
15
5
15
10
4.5V
5V
5.5V
10
20
-40°C
+25°C
+85°C
5
0
0
0
1
0.5
1.5
2
2.5
3
3.5
0
4
0.5
1
Figure 8. Output IP3 vs. Frequency and
Voltage.
2
2.5
3
3.5
4
Figure 9. Output IP3 vs. Frequency and
Temperature.
2.0
70
60
VSWR IN
VWSR OUT
1.8
-40°C
+25°C
+85°C
50
Icc (mA)
1.6
VSWR
1.5
FREQUENCY (GHz)
FREQUENCY (GHz)
1.4
40
30
1.2
20
1.0
10
0.8
0
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 10. Input and Output VSWR vs.
Frequency.
4
6
0
1
2
3
4
5
6
VOLTAGE (V)
Figure 11. Supply Current vs. Voltage and
Temperature.
7
ABA-52563 Typical Scattering Parameters
TC = +25°C, VCC = 5V, ZO = 50 Ω, unless stated otherwise
Freq
(GHz)
S11
Mag.
S11
Ang.
S21
dB
S21
Mag.
S21
Ang.
S12
dB
S12
Mag.
S12
Ang.
S22
Mag.
S22
Ang.
K
Factor
0.05
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.20
1.40
1.60
1.80
2.00
2.20
2.40
2.60
2.80
3.00
3.20
3.40
3.50
4.00
4.50
5.00
5.50
6.00
0.01
0.00
0.00
0.01
0.02
0.03
0.03
0.04
0.04
0.05
0.05
0.05
0.06
0.06
0.06
0.07
0.07
0.08
0.09
0.09
0.10
0.10
0.11
0.11
0.12
0.16
0.19
0.25
0.30
146.6
134.0
-40.6
-53.2
-56.7
-141.5
-128.1
-127.5
-126.7
-123.9
-125.0
-123.4
-127.4
-133.8
-136.7
-142.5
-143.9
-146.1
-148.4
-149.5
-152.7
-158.7
-163.2
-167.6
165.9
138.3
122.8
112.3
99.3
21.7
21.7
21.7
21.7
21.7
21.8
21.8
21.7
21.7
21.7
21.7
21.7
21.6
21.6
21.6
21.5
21.5
21.4
21.3
21.1
20.8
20.4
20.0
19.7
18.3
16.9
15.1
13.7
12.3
12.10
12.11
12.16
12.19
12.19
12.26
12.24
12.21
12.18
12.16
12.13
12.10
12.05
12.04
12.00
11.94
11.87
11.75
11.56
11.33
10.95
10.51
9.97
9.67
8.25
6.98
5.71
4.85
4.14
-2.6
-4.8
-9.6
-14.5
-19.5
-24.8
-29.8
-34.9
-39.8
-44.7
-49.7
-59.6
-69.4
-79.6
-89.8
-100.4
-111.2
-121.9
-133.2
-144.5
-156.1
-167.5
-178.7
175.9
150.6
126.3
105.0
86.7
70.4
-30.2
-30.5
-30.5
-30.8
-30.8
-30.5
-30.8
-30.5
-30.5
-30.8
-30.8
-30.2
-30.2
-29.6
-29.1
-29.4
-28.6
-28.4
-28.0
-27.7
-27.3
-27.1
-27.3
-26.6
-.26.2
-25.5
-24.7
-23.5
-23.1
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.04
0.03
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.05
0.05
0.05
0.06
0.07
0.07
0.3
-0.3
0.1
1.2
2.4
1.0
3.1
4.3
6.1
7.4
11.7
10.8
12.4
13.0
14.7
14.3
16.7
16.2
17.3
15.6
15.8
15.6
15.5
16.0
12.0
12.7
9.5
6.0
1.0
0.15
0.15
0.15
0.15
0.14
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.14
0.14
0.13
0.13
0.13
0.13
0.13
0.14
0.12
0.12
0.11
-2.4
-5.1
-9.6
-13.0
-15.7
-15.7
-17.6
-20.3
-22.5
-24.2
-26.4
-29.4
-32.4
-35.3
-37.8
-38.3
-37.8
-37.3
-36.9
-36.4
-35.9
-35.4
-34.9
-34.6
-33.4
-37.1
-48.4
-63.0
-83.5
1.492
1.528
1.523
1.560
1.560
1.516
1.557
1.520
1.523
1.563
1.566
1.490
1.491
1.424
1.370
1.402
1.326
1.309
1.279
1.273
1.263
1.275
1.338
1.285
1.386
1.462
1.585
1.565
1.680
5
Device Models
Refer to Agilent’s web site
www.agilent.com/view/rf
Ordering Information
Part Number
Devices per Container
Container
ABA-52563-TR1
3000
7" reel
ABA-52563-TR2
10000
13" reel
ABA-52563-BLK
100
antistatic bag
ABA-52563-TR1G
3000
7" reel
ABA-52563-TR2G
10000
13" reel
ABA-52563-BLKG
100
antistatic bag
Note: For lead-free option,the part number will have the character “G” at the end.
Package Dimensions
Outline 63 (SOT-363/SC-70)
Recommended PCB Pad Layout for
Agilent's SC70 6L/SOT-363 Products
0.026
HE
E
0.079
e
0.039
D
0.018
Q1
A2
Dimensions in inches.
A
c
A1
L
b
DIMENSIONS (mm)
SYMBOL
E
D
HE
A
A2
A1
Q1
e
b
c
L
6
MAX.
1.35
2.25
2.40
1.10
1.00
0.10
0.40
MIN.
1.15
1.80
1.80
0.80
0.80
0.00
0.10
0.650 BCS
0.15
0.10
0.10
0.30
0.20
0.30
NOTES:
1. All dimensions are in mm.
2. Dimensions are inclusive of plating.
3. Dimensions are exclusive of mold flash & metal burr.
4. All specifications comply to EIAJ SC70.
5. Die is facing up for mold and facing down for trim/form,
ie: reverse trim/form.
6. Package surface to be mirror finish.
Device Orientation
REEL
TOP VIEW
END VIEW
4 mm
8 mm
CARRIER
TAPE
USER
FEED
DIRECTION
2H
2H
2H
2H
(Package marking example orientation shown.)
COVER TAPE
Tape Dimensions and Product Orientation for Outline 63
P
P2
D
P0
E
F
W
C
D1
t1 (CARRIER TAPE THICKNESS)
Tt (COVER TAPE THICKNESS)
K0
10° MAX.
A0
DESCRIPTION
7
10° MAX.
B0
SYMBOL
SIZE (mm)
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A0
B0
K0
P
D1
2.40 ± 0.10
2.40 ± 0.10
1.20 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.094 ± 0.004
0.094 ± 0.004
0.047 ± 0.004
0.157 ± 0.004
0.039 + 0.010
PERFORATION
DIAMETER
PITCH
POSITION
D
P0
E
1.50 ± 0.10
4.00 ± 0.10
1.75 ± 0.10
0.061 + 0.002
0.157 ± 0.004
0.069 ± 0.004
CARRIER TAPE
WIDTH
THICKNESS
W
t1
8.00 + 0.30 - 0.10
0.254 ± 0.02
0.315 + 0.012
0.0100 ± 0.0008
COVER TAPE
WIDTH
TAPE THICKNESS
C
Tt
5.40 ± 0.10
0.062 ± 0.001
0.205 + 0.004
0.0025 ± 0.0004
DISTANCE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 ± 0.05
0.138 ± 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P2
2.00 ± 0.05
0.079 ± 0.002
www.agilent.com/semiconductors
For product information and a complete list of
distributors, please go to our web site.
For technical assistance call:
Americas/Canada: +1 (800) 235-0312 or
(916) 788-6763
Europe: +49 (0) 6441 92460
China: 10800 650 0017
Hong Kong: (65) 6756 2394
India, Australia, New Zealand: (65) 6755 1939
Japan: (+81 3) 3335-8152(Domestic/International), or
0120-61-1280(Domestic Only)
Korea: (65) 6755 1989
Singapore, Malaysia, Vietnam, Thailand, Philippines,
Indonesia: (65) 6755 2044
Taiwan: (65) 6755 1843
Data subject to change.
Copyright © 2004 Agilent Technologies, Inc.
Obsoletes 5989-0951EN
December 4, 2004
5989-1971EN