MICROSEMI 1N6625

1N6620 thru 1N6625
VOIDLESS-HERMETICALLY SEALED
ULTRA FAST RECOVERY GLASS
RECTIFIERS
SCOTTSDALE DIVISION
APPEARANCE
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF19500/585 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 1.5 to 2.0 Amp rated rectifiers for working
peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidlessglass construction using an internal “Category I” metallurgical bond. These devices
are also available in surface mount MELF package configurations by adding a “US”
suffix (see separate data sheet for 1N6620US thru 1N6625US). Microsemi also
offers numerous other rectifier products to meet higher and lower current ratings
with various recovery time speed requirements including standard, fast and ultrafast
device types in both through-hole and surface mount packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
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APPLICATIONS / BENEFITS
Popular JEDEC registered 1N6620 to 1N6625 series
Voidless hermetically sealed glass package
Extremely robust construction
Triple-layer passivation
Internal “Category I” Metallurgical bonds
JAN, JANTX, and JANTXV available per MIL-PRF19500/585
Further options for screening in accordance with
MIL-PRF-19500 for JANS by using a “MSP” prefix,
e.g. MSP6620, MSP6624, etc.
Surface mount equivalents also available in a square
end-cap MELF configuration with “US” suffix (see
separate data sheet for 1N6620US thru 1N6625US)
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MECHANICAL AND PACKAGING
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Junction Temperature: -65 C to +175 C
Storage Temperature: -65oC to +175oC
Peak Forward Surge Current @ 25oC: 20 Amps
(except 1N6625 which is 15 Amps)
Note: Test pulse = 8.3 ms, half-sine wave.
Average Rectified Forward Current (IO) at TL= +55oC
(L=.375 inch from body):
1N6620 thru 1N6622: 2.0 Amps
1N6623 thru 1N6625: 1.5 Amps
(Derate linearly at 0.833%/oC for TL> +55oC)
Average Rectified Forward Current (IO) at TA=25oC:
1N6620 thru 1N6622: 1.2 Amps
1N6623 thru 1N6625: 1.0 Amp
(Derate linearly at 0.67%/ oC for TA>+25oC. This IO
rating is typical for PC boards where thermal
resistance from mounting point to ambient is
sufficiently controlled where TJ(max) is not exceeded.)
Thermal Resistance L= 0.375 inch (RθJL): 38oC/W
Capacitance at VR= 10 V: 10 pF
Solder temperature: 260oC for 10 s (maximum)
Copyright  2004
12-03-2004 REV A
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CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: Axial-leads are Copper with
Tin/Lead (Sn/Pb) finish
MARKING: Body painted and part number, etc.
POLARITY: Cathode indicated by band
Tape & Reel option: Standard per EIA-296
Weight: 340 mg
See package dimensions on last page
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1N6620
6620 thru 1N6625
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Ultrafast recovery rectifier series 200 to 1000 V
Military and other high-reliability applications
Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
High forward surge current capability
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
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Package “A”
Axial
WWW . Microsemi .C OM
DESCRIPTION
1N6620 thru 1N6625
VOIDLESS-HERMETICALLY SEALED
ULTRA FAST RECOVERY GLASS
RECTIFIERS
SCOTTSDALE DIVISION
TYPE
NUMBER
MINIMUM
BREAKDOWN
VOLTAGE
VR
IR = 50µA
1N6620
1N6621
1N6622
1N6623
1N6624
1N6625
V
220
440
660
880
990
1100
MAXIMUM
FORWARD
VOLTAGE
VF @ IF
[email protected]
1.40V @ 1.2A
1.40V @ 1.2A
1.40V @ 1.2A
1.55V @ 1.0A
1.55V @ 1.0A
1.75V @ 1.0A
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
[email protected]
1.60V @ 2.0A
1.60V @ 2.0A
1.60V @ 2.0A
1.80V @ 1.5A
1.80V @ 1.5A
1.95V @ 1.5A
V
200
400
600
800
900
1000
MAXIMUM
REVERSE
CURRENT IR @
VRWM
IR
TA=25oC TA=150oC
µA
0.5
0.5
0.5
0.5
0.5
1.0
Note 1
Note 2
PEAK
RECOVERY
CURRENT
IRM (rec)
IF = 2A,
100A/µs
Note 2
ns
30
30
30
50
50
60
ns
45
45
45
60
60
80
A
3.5
3.5
3.5
4.2
4.2
5.0
MAXIMUM
REVERSE
RECOVERY
TIME (LOW
CURRENT)
µA
150
150
150
150
150
200
trr
MAXIMUM
REVERSE
RECOVERY
TIME (HIGH
CURRENT)
trr
FORWARD
RECOVERY
VOLTAGE
VFRM Max
IF = 0.5A
tfr =12ns
V
12
12
12
18
18
30
WWW . Microsemi .C OM
ELECTRICAL CHARACTERISTICS @ 25oC
NOTE 1: Low Current Reverse Recovery Time Test Conditions: IF=0.5A, IRM=1.0A, IR(REC) = 0.25A per MIL-STD-750,
Method 4031, Condition B.
NOTE 2: High Current Reverse Recovery Time Test Conditions: IF = 2 A, di/dt=100 A/µs MIL-STD-750, Method 4031,
Condition D.
Symbol
VBR
VRWM
VF
IR
C
trr
SYMBOLS & DEFINITIONS
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and
temperature.
Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in
picofarads.
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified recovery decay point after a peak
reverse current is reached.
CHARTS AND GRAPHS
Copyright  2004
12-03-2004 REV A
1N6620 thru 1N6625
FIGURE 1
Typical Forward Current
vs
Forward Voltage
FIGURE 2
Typical Forward Current
vs
Forward Voltage
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
1N6620 thru 1N6625
SCOTTSDALE DIVISION
VOIDLESS-HERMETICALLY SEALED
ULTRA FAST RECOVERY GLASS
RECTIFIERS
WWW . Microsemi .C OM
FIGURE 3
Typical Reverse Current vs.
Applied Reverse Voltage
FIGURE 4
Typical Reverse Current vs.
Applied Reverse Voltage
Copyright  2004
12-03-2004 REV A
FIGURE 6
Average Forward Current vs
Lead Temperature (50% Duty Cycle, Square Wave)
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
1N6620 thru 1N6625
FIGURE 5
Average Forward Current vs.
Lead Temperature (50% Duty Cycle, Square Wave)
1N6620 thru 1N6625
SCOTTSDALE DIVISION
VOIDLESS-HERMETICALLY SEALED
ULTRA FAST RECOVERY GLASS
RECTIFIERS
WWW . Microsemi .C OM
FIGURE 7
Forward Pulse Current vs.
Pulse Duration
FIGURE 8
Reverse Pulse Power vs.
Pulse Duration
PACKAGE DIMENSIONS
Lead tolerance = +0.002/-0.003 inches
1N6620 thru 1N6625
Copyright  2004
12-03-2004 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 4