LM387/LM387A Low Noise Dual Preamplifier General Description Features The LM387 is a dual preamplifier for the amplification of low level signals in applications requiring optimum noise performance. Each of the two amplifiers is completely independent, with an internal power supply decoupler-regulator, providing 110 dB supply rejection and 60 dB channel separation. Other outstanding features include high gain (104 dB), large output voltage swing (VCC b 2V)p-p, and wide power bandwidth (75 kHz, 20 Vp-p). The LM387A is a selected version of the LM387 that has lower noise in a NAB tape circuit, and can operate on a larger supply voltage. The LM387 operates from a single supply across the wide range of 9V to 30V, the LM387A operates on a supply of 9V to 40V. The amplifiers are internally compensated for gains greater than 10. The LN387, LM387A is available in an 8-lead dualin-line package. The LM387, LM387A is biased like the LM381. See AN-64 and AN-104. Y Y Y Y Y Y Y Y Y Y Y Low noise 1.0 mV total input noise High gain 104 dB open loop Single supply operation Wide supply range LM387 9 to 30V LM387A 9 to 40V Power supply rejection 110 dB Large output voltage swing (VCC b 2V)p-p Wide bandwidth 15 MHz unity gain Power bandwidth 75 kHz, 20 Vp-p Internally compensated Short circuit protected Performance similar to LM381 Schematic and Connection Diagrams Dual-In-Line Package TL/H/7845 – 2 Top View Order Number LM387N or LM387AN See NS Package Number N08E TL/H/7845 – 1 Typical Applications TL/H/7845 – 3 FIGURE 1. Flat Gain Circuit (AV e 1000) C1995 National Semiconductor Corporation TL/H/7845 TL/H/7845 – 4 FIGURE 2. NAB Tape Circuit RRD-B30M115/Printed in U. S. A. LM387/LM387A Low Noise Dual Preamplifier March 1987 Absolute Maximum Ratings Power Dissipation (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. Supply Voltage LM387 LM387A Operating Temperature Range Storage Temperature Range Lead Temperature (Soldering, 10 sec.) a 30V a 40V 1.5W 0§ C to a 70§ C b 65§ C to a 150§ C 260§ C Electrical Characteristics TA e 25§ C, VCC e 14V, unless otherwise stated Parameter Voltage Gain Supply Current Conditions Open Loop, f e 100 Hz Min LM387, VCC 9V–30V, RL e % LM387A, VCC 9V–40V, RL e % Input Resistance Positive Input Negative Input 50 Input Current Negative Input Typ Open Loop Output Current Source Sink Output Voltage Swing Peak-to-Peak Unity Gain Bandwidth Units V/V 10 10 mA mA 100 200 kX kX 0.5 Output Resistance Max 160,000 3.1 mA 150 X 8 2 mA mA VCCb2 V 15 MHz 75 kHz Large Signal Frequency Response 20 Vp-p (VCC l 24V), THD s 1% Maximum Input Voltage Linear Operation Supply Rejection Ratio Input Referred f e 1 kHz Channel Separation f e 1 kHz Total Harmonic Distortion 60 dB Gain, f e 1 kHz 0.1 0.5 % Total Equivalent Input Noise (Flat Gain Cricuit) 10 Hz–10,000 Hz LM387 Figure 1 1.0 1.2 mVrms Output Noise NAB Tape Playback Circuit Gain of 37 dB Unweighted LM387A Figure 2 400 700 mVrms 300 110 40 mVrms dB 60 dB Note 1: For operation in ambient temperatures above 25§ C, the device must be derated based on a 150§ C maximum junction temperature and a thermal resistance of 80§ C/W junction to ambient. Typical Applications (Continued) Frequency Response of NAB Circuit of Figure 2 Two-Pole Fast Turn-ON NAB Tape Preamplifier TL/H/7845 – 6 TL/H/7845–5 2 Typical Performance Characteristics VCC vs ICC Gain and Phase Response Large Signal Frequency Response PSRR vs Frequency (Input Referred) Channel Separation Distortion vs Frequency Non-Inverting Amplifier Noise Voltage vs Frequency Noise Current vs Frequency Distortion vs Frequency Inverting Amplifier TL/H/7845 – 7 3 LM387/LM387A Low Noise Dual Preamplifier Typical Applications (Continued) Inverting Amplifier Ultra-Low Distortion Typical Magnetic Phono Preamplifier TL/H/7845 – 8 TL/H/7845 – 9 Physical Dimensions inches (millimeters) Molded Dual-In-Line Package (N) Order Number LM387N or LM387AN NS Package Number N08E LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. 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