HMC234C8 v03.1105 GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8 GHz Typical Applications Features The HMC234C8 is ideal for: Isolation: 52 dB @ 2 GHz 40 dB @ 6 GHz • Telecom Infrastructure Insertion Loss: 1.6 dB Typical @ 6 GHz • Microwave Radio & VSAT Non-Reflective Design • Military Radios, Radar & ECM Surface Mount Ceramic Package • Test Instrumentation General Description The HMC234C8 is a broadband high isolation nonreflective GaAs MESFET SPDT switch in a nonhermetic surface mount ceramic package. Covering DC to 8 GHz, the switch features >52 dB isolation up to 2 GHz and >38 dB isolation up to 8 GHz. The switch operates using complementary negative control voltage logic lines of -5/0V and requires no bias supply. This product is an excellent pin-for-pin replacement to the SMDI SSW124. SWITCHES - SMT 10 Functional Diagram Electrical Specifi cations, TA = +25° C, With 0/-5V Control, 50 Ohm System Parameter 10 - 96 Frequency Insertion Loss DC - 2.0 GHz DC - 6.0 GHz DC - 8.0 GHz Isolation DC - 2.0 GHz DC - 6.0 GHz DC - 8.0 GHz Min. 47 35 33 Typ. Max. Units 1.4 1.6 2.1 1.7 1.9 2.4 dB dB dB 52 40 38 dB dB dB Return Loss “On State” DC - 2.0 GHz DC - 8.0 GHz 15 12 dB dB Return Loss RF1, RF2 “Off State” DC - 2.0 GHz DC - 6.0 GHz DC - 8.0 GHz 14 9 6 dB dB dB Input Power for 1 dB Compression 0.5 - 8.0 GHz 22 26 dBm Input Third Order Intercept (Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation) 0.5 - 8.0 GHz 40 46 dBm Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) DC - 8.0 GHz 3 5 ns ns For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC234C8 v03.1105 GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8 GHz Insertion Loss Isolation 0 0 -20 ISOLATION (dB) -2 -3 -40 -50 -60 + 25C + 85C - 40C -4 RF1 RF2 -30 -70 -5 -80 0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 FREQUENCY (GHz) FREQUENCY (GHz) Return Loss 7 8 10 0.1 and 1 dB Input Compression Point 35 0 RFC RF1, RF2 ON RF1, RF2 OFF -5 INPUT P1dB (dBm) 30 -10 -15 -20 25 20 -25 1 dB Compression Point 0.1 dB Compression Point 15 -30 0 1 2 3 4 5 FREQUENCY (GHz) 6 7 0 8 1 2 3 4 5 FREQUENCY (GHz) 6 7 8 Input Third Order Intercept Point 60 55 INPUT IP3 (dBm) RETURN LOSS (dB) 6 SWITCHES - SMT INSERTION LOSS (dB) -10 -1 50 45 40 + 25C + 85C - 40C 35 30 0 1 2 3 4 5 FREQUENCY (GHz) 6 7 8 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 10 - 97 HMC234C8 v03.1105 GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8 GHz Absolute Maximum Ratings SWITCHES - SMT 10 RF Input Power (Vctl= -5V) (0.5 - 8 GHz) +30 dBm (@ +50 °C) Control Voltage Range (A & B) +1.0V to -7.5 Vdc Channel Temperature 150 °C Thermal Resistance 94 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Control Voltages State Bias Condition Low 0 to -0.2V @ 10 uA Max. High -5V @ 10 uA Typ. to -7V @ 45 uA Typ. Truth Table Control Input Signal Path State A B RFC to RF1 RFC to RF2 High Low ON OFF Low High OFF ON Caution: Do not “Hot Switch” power levels greater than +26 dBm (Vctl = 0/-5 Vdc). Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: WHITE ALUMINA 92% 2. LEAD, PACKAGE BOTTOM MATERIAL: COPPER 3. PLATING: ELECTROLYTIC GOLD 100-200 MICROINCHES, OVER ELECTROLYTIC NICKEL 100-250 MICROINCHES. 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. PACKAGE LENGTH AND WIDTH DIMENSIONS DO NOT INCLUDE LID SEAL PROTRUSION .005 PER SIDE. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 10 - 98 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC234C8 v03.1105 GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8 GHz Suggested Driver Circuit Pin Descriptions Pin Number Function Description 1, 3, 4 GND Package bottom must also be connected to PCB RF ground. 2, 5, 8 RFC, RF1, RF2 This pin is DC coupled and matched to 50 Ohm. Blocking capacitors are required if RF line potential is not equal to 0V. 6 B See truth table and control voltage table. 7 A See truth table and control voltage table. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com SWITCHES - SMT 10 10 - 99 HMC234C8 v03.1105 GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8 GHz Evaluation PCB SWITCHES - SMT 10 List of Materials for Evaluation PCB 105771 [1] Item Description J1 - J3 PCB Mount SMA RF Connector J4 - J6 DC Pin U1 HMC234C8 SPDT Switch PCB [2] 105707 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 10 - 100 The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 ohm impedance and the package ground leads and package bottom should be connected directly to the ground plane similar to that shown above. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC234C8 v03.1105 GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8 GHz Notes: SWITCHES - SMT 10 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 10 - 101