17 September 1997 HOA2498 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Focused for maximum response • Wide operating temperature range (-55¡C to +100¡C) INFRA-64.TIF DESCRIPTION The HOA2498 series consists of an infrared emitting diode and an NPN silicon phototransistor (HOA2498-001, -002) or photodarlington (HOA2498-003), encased side-by-side on converging optical axes in a black thermoplastic housing. The detector responds to radiation from the IRED only when a reflective object passes within its field of view. The HOA2498 series employs metal can packaged components. For additional component information see SE1450, SD1440, and SD1410. Housing material is polyester. Housings are soluble in chlorinated hydrocarbons and ketones. Recommended cleaning agents are methanol and isopropanol. OUTLINE DIMENSIONS in inches (mm) Tolerance 3 plc decimals ±0.010(0.25) 2 plc decimals ±0.020(0.51) .250(6.35) .070(1.78) .625(15.88) .450(11.43) .75(19.05) .50(12.7) TEST SURFACE (E) EMITTER (C) COLLECTOR (A) ANODE (K) CATHODE .250(6.35) .150(3.81) .062(1.60)R 2 PLCS .040(1.02) .187(4.75) DIM_039.ds4 © Honeywell Inc. h Honeywell reserves the right to make changes in order to improve design and supply the best products possible. 17 September 1997 HOA2498 Reflective Sensor ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS IR EMITTER DETECTOR COUPLED CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS (25¡C Free-Air Temperature unless otherwise noted) Operating Temperature Range Storage Temperature Range Soldering Temperature (10 sec) IR EMITTER Power Dissipation Reverse Voltage Continuous Forward Current DETECTOR Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation Collector DC Current SCHEMATIC -55¡C to 100¡C -55¡C to 125¡C 260¡C 75 mW [À] 3V 50 mA TRANS. 30 V 5V 75 mW [À] 30 mA DARLINGTON 15 V 5V 75 mW [À] 30 mA Notes 1. Derate linearly at 0.71 mW/¡C above 25¡C. Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h © Honeywell Inc. 17 September 1997 HOA2498 Reflective Sensor Fig. 1 IRED Forward Bias Characteristics Fig. 2 Non-Saturated Switching Time vs Load Resistance Pulsed condition TA = 80°C 60 50 40 30 TA = 25°C 20 10 TA = -40°C 100 Photodarlington 10 Phototransistor 1 0 0.8 1.0 1.2 1.4 1.6 1.8 10 2.0 100 1000 10000 Load resistance - Ohms Forward voltage - V Fig. 4 Dark Current vs Temperature gra_303.cdr Normalized collector current Fig. 3 gra_079.ds4 1000 100 90 80 70 Response time - µs Forward current - mA gra_073.ds4 Collector Current vs Ambient Temperature gra_076.ds4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 Free-air temperature - °C Fig. 6 Collector Current vs Distance to Reflective Surface gra_084.ds4 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Normalized collector current Normalized collector current Fig. 5 IF = 30 mA VCE = 5.0 V 0.0 0.00 0.10 0.20 0.30 0.40 0.50 0.60 Collector Current vs IRED Forward Current gra_085.ds4 1.80 1.60 1.40 1.20 1.00 0.80 VCE = 5 V d = 0.5 in. 0.60 0.40 0.20 0.00 0 Distance to reflective surface - inches 10 20 30 40 50 IRED forward current - mA• All Performance Curves Show Typical Values © Honeywell Inc. h Honeywell reserves the right to make changes in order to improve design and supply the best products possible. 17 September 1997 HOA2498 Reflective Sensor Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h © Honeywell Inc.