HTSEMI BZX84C6V2W

BZX84C…W Series
SILICON PLANAR ZENER DIODES
3
1
2
1. Anode 3. Cathode
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
PD
200
mW
Tj ,TS
- 55 to + 150
Power Dissipation
Operating Junction and Storage Temperature Range
C
O
Electrical Characteristics ( Ta = 25 OC unless otherwise noted, VF < 0.9 V at IF = 10 mA)
Type
Zener Voltage Range 1)
Marking
Code
VZ
Dynamic Resistance
Reverse Current
at lZT
ZZT
at lZT
ZZK
at IZK
IR
at VR
Min.(V)
Max.(V)
mA
Max.(Ω)
mA
Max.(Ω)
mA
Max.(µA)
V
EA
2.2
2.6
5
100
5
600
1
50
1
BZX84C2V7W
EB
2.5
2.9
5
100
5
600
1
20
1
BZX84C3V0W
EC
2.8
3.2
5
95
5
600
1
20
1
BZX84C3V3W
ED
3.1
3.5
5
95
5
600
1
5
1
BZX84C3V6W
EE
3.4
3.8
5
90
5
600
1
5
1
BZX84C3V9W
EF
3.7
4.1
5
90
5
600
1
3
1
BZX84C4V3W
EH
4
4.6
5
90
5
600
1
3
1
BZX84C4V7W
EJ
4.4
5
5
80
5
600
1
3
2
BZX84C2V4W
BZX84C5V1W
EK
4.8
5.4
5
60
5
500
1
2
2
BZX84C5V6W
EM
5.2
6
5
40
5
480
1
1
2
BZX84C6V2W
EN
5.8
6.6
5
10
5
400
1
3
4
BZX84C6V8W
EP
6.4
7.2
5
15
5
150
1
2
4
BZX84C7V5W
ER
7
7.9
5
15
5
80
1
1
5
BZX84C8V2W
EX
7.7
8.7
5
15
5
80
1
0.7
5
BZX84C9V1W
EY
8.5
9.6
5
15
5
80
1
0.5
6
BZX84C10W
EZ
9.4
10.6
5
20
5
100
1
0.2
7
BZX84C11W
FA
10.4
11.6
5
20
5
150
1
0.1
8
BZX84C12W
FB
11.4
12.7
5
25
5
150
1
0.1
8
BZX84C13W
FC
12.4
14.1
5
30
5
150
1
0.1
8
BZX84C15W
FD
13.8
15.6
5
30
5
170
1
0.1
10.5
BZX84C16W
FE
15.3
17.1
5
40
5
200
1
0.1
11.2
BZX84C18W
FF
16.8
19.1
5
45
5
200
1
0.1
12.6
BZX84C20W
FH
18.8
21.2
5
55
5
225
1
0.1
14
BZX84C22W
FJ
20.8
23.3
5
55
5
225
1
0.1
15.4
BZX84C24W
FK
22.8
25.6
5
70
5
250
1
0.1
16.8
BZX84C27W
FM
25.1
28.9
2
80
2
250
0.5
0.1
18.9
BZX84C30W
FN
28
32
2
80
2
300
0.5
0.1
21
BZX84C33W
FP
31
35
2
80
2
300
0.5
0.1
23.1
BZX84C36W
FR
34
38
2
90
2
325
0.5
0.1
25.2
BZX84C39W
FX
37
41
2
130
2
350
0.5
0.1
27.3
1)
Tested with pulses tp = 20 ms.
１　JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５
BZX84C…W Series
Electrical Characteristics ( Ta = 25 OC unless otherwise noted, VF < 0.9 V at IF = 10 mA)
Type
Zener Voltage Range 1)
Marking
Code
VZ
Dynamic Resistance
Reverse Current
at lZT
ZZT
at lZT
ZZK
at IZK
IR
at VR
Min.(V)
Max.(V)
mA
Max.(Ω)
mA
Max.(Ω)
mA
Max.(µA)
V
BZX84C43W
FY
40
46
2
150
2
375
0.5
0.1
30.1
BZX84C47W
FZ
44
50
2
170
2
375
0.5
0.1
32.9
BZX84C51W
KA
48
54
2
180
2
400
0.5
0.1
35.7
BZX84C56W
KB
52
60
2
200
2
425
0.5
0.1
39.2
BZX84C62W
KC
58
66
2
215
2
450
0.5
0.1
43.4
BZX84C68W
KD
64
72
2
240
2
475
0.5
0.1
47.6
BZX84C75W
KE
70
79
2
255
2
500
0.5
0.1
52.5
1)
Tested with pulses tp = 20 ms.
２
JinYu
semiconductor
www.htsemi.com
Ｄａｔｅ：２０１１／０５