STZ8000 Series Silicon Planar Zener Diodes For stabilization of power supply application PINNING PIN DESCRIPTION 1 Cathode 2 Anode 2 1 Top View Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Power Dissipation Ptot 300 mW Repetitive Peak Forward Current IFRM 200 mA Tj 150 O Tstg - 55 to + 150 O Symbol Value RthA 417 VF 1 Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Thermal Resistance Junction to Ambient Air Forward Voltage at IF = 10 mA C C Unit C/W O V １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ STZ8000 Series Zener Voltage Range Type Marking Code STZ8024 1C STZ8027 1D STZ8027A 1C1 STZ8027B 7D lZT for mA V Ω (Max.) Ω (Max.) mA μA (Max.) V SZ (mV/OC) Typ. at IZT 5 2.28…2.6 100 - - 120 1 -1.6 110 - - 120 1 -2 120 - - 50 1 -2.1 130 - - 20 1 -2.4 130 - - 10 1 -2.4 130 - - 10 1 -2.5 130 - - 10 1 -2.5 80 800 1 2 1 -1.4 60 500 1 2 1.5 -0.8 40 200 0.5 1 2.5 1.2 30 100 0.5 1 3 2.3 20 60 0.5 0.5 3.5 3 20 60 0.5 0.5 4 4 5 2.5…2.75 2.8…3.2 2.8…3.05 STZ8030B 7E STZ8033B 7F STZ8036 1H STZ8036A 1M1 STZ8036B 7H STZ8039 1J STZ8039A 1Q1 5 3.1…3.5 5 3.1…3.35 3.25…3.5 3.4…3.8 5 3.4…3.65 3.55…3.8 3.7…4.1 5 3.7…3.97 7J STZ8043 1K 4…4.6 STZ8043A 1T1 4.03…4.26 STZ8043B 7K STZ8043C 3.87…4.1 5 4.17…4.4 1W1 4.31…4.54 STZ8047 1M 4.4…5 STZ8047A 1Y1 STZ8047B EB STZ8047C 2A1 4.74…4.99 STZ8051 1N 4.8…5.4 STZ8051A 2C1 STZ8051B EC STZ8051C 2E1 5 5 4.45…4.69 4.59…4.83 4.87…5.12 5…5.26 5.14…5.4 1P 5.3…6 STZ8056A 2G1 5.3…5.58 STZ8056B ED STZ8056C 2J1 STZ8062 1R 5.8…6.6 STZ8062A 2L1 5.85…6.15 STZ8062B 7R STZ8062C 2N1 6.24…6.56 1X 6.4…7.2 STZ8068 STZ8068A 2Q1 STZ8068B 7X STZ8068C 2S1 STZ8075 at VR 2.95…3.2 STZ8039B STZ8056 IR 2.65…2.9 1E 1F at IZK 2.5…2.9 1F1 1J1 ZZK Temp. coefficient of Zener Voltage ZZT STZ8030A STZ8033A Reverse Leakage Current Dynamic Impedance VZ STZ8030 STZ8033 1) 5 5.48…5.76 5.66…5.95 5 5 6.05…6.36 6.44…6.77 6.64…6.98 6.85…7.2 1Y 7…7.9 STZ8075A 2U1 7.07…7.43 STZ8075B 7Y STZ8075C 2X1 5 7.29…7.67 7.51…7.89 ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ STZ8000 Series Zener Voltage Range Type Marking Code lZT mA for V Ω (Max.) Ω (Max.) mA μA (Max.) V SZ (mV/OC) Typ. at IZT 20 60 0.5 0.5 5 4.6 20 60 0.5 0.5 6 5.5 30 60 0.5 0.1 7 6.4 30 60 0.5 0.1 8 7.4 30 80 0.5 0.1 9 8.4 35 80 0.5 0.1 10 9.4 40 80 0.5 0.1 10 10 40 80 0.5 0.1 11 11.4 50 80 0.5 0.1 12 12.4 60 80 0.5 0.1 13 14.4 80 100 0.5 0.1 15 16.4 80 100 0.5 0.1 17 18.4 1Z 7.7…8.7 2Z1 7.77…8.17 STZ8082B EJ STZ8082C 3B1 STZ8091 2A 8.5…9.6 STZ8091A 3D1 8.58…9.02 STZ8091B EK STZ8091C 3F1 9.14…9.6 STZ8100 2B 9.4…10.6 3H1 STZ8100B 8B STZ8100C 3K1 STZ8110 8.03…8.43 5 5 8.87…9.33 9.44…9.92 9.75…10.25 2C 10.4…11.6 10.4…10.94 STZ8110B EN STZ8110C 3P1 STZ8120 2D 11.4…12.7 STZ8120A 3R1 11.4…11.96 STZ8120B 8D STZ8120C 3T1 12.06…12.68 STZ8130 2E 12.4…14.1 3W1 ER STZ8130C 3Y1 STZ8140 3Z1 STZ8150 5 10.73…11.28 5 5 11.73…12.33 12.4…12.99 12.73…13.4 13.25…14.08 5 13.65…14.35 2F 13.9…15.6 4B1 13.9…14.76 STZ8150B EX STZ8150C 4D1 STZ8160 2H 15.3…17.1 STZ8160A 4F1 15.3…16.09 STZ8160B 8H STZ8160C 4H1 16.26…17.1 2J 16.9…19.1 STZ8180A 4K1 STZ8180B 8J STZ8180C 4M1 at VR 11.05…11.6 STZ8150A STZ8180 IR 10.07…10.59 3M1 STZ8130B at IZK 8.29…8.7 STZ8110A STZ8130A ZZK Temp. coefficient of Zener Voltage ZZT STZ8082A STZ8100A Reverse Leakage Current Dynamic Impedance VZ STZ8082 5 1) 5 14.6…15.35 14.95…15.6 5 5 15.7…16.5 16.9…17.76 17.55…18.45 18.2…19.1 STZ8200 2K 18.8…21.2 STZ8200A 4P1 18.85…19.81 STZ8200B 8K STZ8200C 4R1 STZ8220 2M 20.8…23.3 STZ8220A 4T1 20.8…21.86 STZ8220B 8M STZ8220C 4W1 5 19.5…20.5 20.15…21.19 5 21.45…22.55 22.1…23.24 ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ STZ8000 Series Zener Voltage Range Type Marking Code lZT for mA V Ω (Max.) Ω (Max.) mA μA (Max.) V SZ (mV/OC) Typ. at IZT 100 120 0.5 0.1 19 20.4 120 120 0.5 0.1 21 23.4 160 160 0.5 0.1 23 26.6 200 200 0.5 0.1 25 29.7 250 250 0.5 0.1 27 33 300 300 0.5 2 30 35.6 2N 22.8…25.6 4Y1 22.8…23.97 STZ8240B FC STZ8240C 5A1 24.35…25.6 STZ8270 2P 25.1…28.9 23.5…24.7 STZ8270A 5C1 STZ8270B FD STZ8270C 5E1 27.3…28.7 STZ8300 2R 28…32 STZ8300A 5G1 STZ8300B FE STZ8300C 5J1 25.3…26.7 26.3…27.7 28.3…29.7 2 29.3…30.8 2X 31…35 STZ8330A 5L1 31.2…32.8 STZ8330B 8X STZ8330C 5N1 2 32.2…33.8 34…38 STZ8360A 5Q1 34.1…35.9 STZ8360B 8Y STZ8360C 5S1 36.1…37.9 2Z 37…41 STZ8390A 5U1 STZ8390B FJ STZ8390C 5X1 1) IR at VR 33.2…34.9 2Y STZ8390 at IZK 30.2…31.8 STZ8330 STZ8360 ZZK Temp. coefficient of Zener Voltage ZZT STZ8240A 2 Reverse Leakage Current Dynamic Impedance VZ STZ8240 5 1) 2 35.1…36.9 37.1…39 2 38…40 39…41 VZ is tested with pulses (20 ms). Power Dissipation: Ptot (mW) 300 200 100 0 0 25 150 100 Ambient Temperature: Ta ( C) O Derating Curve ４ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ STZ8000 Series PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 A c HE A D E bp UNIT A mm 1.10 0.80 bp 0.40 0.25 C 0.15 0.10 D 1.80 1.60 E HE 1.35 1.15 2.80 2.30 ５ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５