ISSI IS49NLC18160

IS49NLC93200,IS49NLC18160,IS49NLC36800
288Mb (x9, x18, x36) Common I/O RLDRAM 2 Memory
ADVANCED INFORMATION
JUNE 2012
FEATURES
•
•
•
•
•
•
•
•
•
•
533MHz DDR operation (1.067 Gb/s/pin data
rate)
38.4Gb/s peak bandwidth (x36 at 533 MHz
clock frequency)
Reduced cycle time (15ns at 533MHz)
32ms refresh (8K refresh for each bank; 64K
refresh command must be issued in total each
32ms)
8 internal banks
Non-multiplexed addresses (address
multiplexing option available)
SRAM-type interface
Programmable READ latency (RL), row cycle
time, and burst sequence length
Balanced READ and WRITE latencies in order to
optimize data bus utilization
•
•
•
•
•
•
•
•
•
•
Data mask signals (DM) to mask signal of
WRITE data; DM is sampled on both edges of
DK.
Differential input clocks (CK, CK#)
Differential input data clocks (DKx, DKx#)
On-die DLL generates CK edge-aligned data and
output data clock signals
Data valid signal (QVLD)
HSTL I/O (1.5V or 1.8V nominal)
25-60Ω matched impedance outputs
2.5V VEXT, 1.8V VDD, 1.5V or 1.8V VDDQ I/O
On-die termination (ODT) RTT
IEEE 1149.1 compliant JTAG boundary scan
Operating temperature:
Commercial
(TC = 0° to +95°C; TA = 0°C to +70°C),
Industrial
(TC = -40°C to +95°C; TA = -40°C to +85°C)
OPTIONS
•
•
•
Package:
− 144-ball FBGA (leaded)
− 144-ball FBGA (lead-free)
Configuration:
− 32Mx9
− 16Mx18
− 8Mx36
Clock Cycle Timing:
Speed Grade
-18
-25E
-25
-33
-5
Unit
tRC
15
15
20
20
20
ns
tCK
1.875
2.5
2.5
3.3
5
ns
Copyright © 2012 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the
latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such
applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
RLDRAM is a registered trademark of Micron Technology, Inc.
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 06/20/2012
1
IS49NLC93200,IS49NLC18160,IS49NLC36800
1 Package Ballout and Description
1.1 288Mb (32Mx9) Common I/O BGA Ball-out (Top View)
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
1
VREF
VDD
VTT
A221
A212
A5
A8
BA2
NF3
DK
REF#
WE#
A18
A15
VSS
VTT
VDD
VREF
Symbol
VDD
VSS
VDDQ
VSSQ
VEXT
VREF
VTT
A*
BA*
DQ*
DK*
QK*
CK*
DM
CS#,WE#,REF#
ZQ
QVLD
DNU,NF
T*
Total
2
VSS
DNU4
DNU4
DNU4
DNU4
DNU4
A6
A9
NF3
DK#
CS#
A16
DNU4
DNU4
DNU4
DNU4
DNU4
ZQ
3
VEXT
DNU4
DNU4
DNU4
DNU4
DNU4
A7
VSS
VDD
VDD
VSS
A17
DNU4
DNU4
DNU4
DNU4
DNU4
VEXT
4
VSS
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
VDD
VSS
VDD
VDD
VSS
VDD
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
VSS
Description
Supply voltage
Ground
DQ power supply
DQ Ground
Supply voltage
Reference voltage
Termination voltage
Address - A0-22
Banks - BA0-2
I/O
Input data clock(Differential inputs)
Output data clocks(outputs)
Input clocks (CK, CK#)
Input data mask
Command control pins
External impedance (25–60Ω)
Data valid
Do not use, No function
JTAG - TCK,TMS,TDO,TDI
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 06/20/2012
5
6
7
8
Ball count
16
16
8
12
4
2
4
23
3
9
2
2
2
1
3
1
1
31
4
144
9
VSS
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
VDD
VSS
VDD
VDD
VSS
VDD
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
VSS
10
VEXT
DQ0
DQ1
QK0#
DQ2
DQ3
A2
VSS
VDD
VDD
VSS
A12
DQ4
DQ5
DQ6
DQ7
DQ8
VEXT
11
TMS
DNU4
DNU4
QK0
DNU4
DNU4
A1
A4
BA0
BA1
A14
A11
DNU4
DNU4
DNU4
DNU4
DNU4
TDO
12
TCK
VDD
VTT
VSS
A20
QVLD
A0
A3
CK
CK#
A13
A10
A19
DM
VSS
VTT
VDD
TDI
Notes:
NOTES:
1. Reserved
for future
use. This
signal
is not
connected.
1)
Reserved
for future
use.
This
may
2.Reserved for future use. This signal is internally
optionally
be
connected
to
GND.
connected and has parasitic characteristics of an address
2)
Reserved
input
signal. for future use. This signal is
internally
connected
has parasitic
3. No function.
This signal isand
internally
connected and has
parasitic characteristics
of aaddress
clock input
signal.
This may
characteristics
of an
input
signal.
optionally
connected tobe
GND.
This maybeoptionally
connected to GND.
4. Do not use. This signal is internally connected and has
3) No function. This signal is internally
parasitic characteristics of a I/O. This may optionally be
connected
connected to and
GND. has
Noteparasitic
that if ODT characteristics
is enabled, these
of
clock
input signal. This may optionally
pinsaare
High-Z.
be connected to GND.
4) Do not use. This signal is internally
connected and has parasitic characteristics
of a I/O. This may optionally be connected
to GND. Note that if ODT is enabled, these
pins will be connected to VTT.
2
IS49NLC93200,IS49NLC18160,IS49NLC36800
1.2 288Mb (16Mx18) Common I/O BGA Ball-out (Top View)
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
1
VREF
VDD
VTT
A221
A212
A5
A8
BA2
NF3
DK
REF#
WE#
A18
A15
VSS
VTT
VDD
VREF
Symbol
VDD
VSS
VDDQ
VSSQ
VEXT
VREF
VTT
A*
BA*
DQ*
DK*
QK*
CK*
DM
CS#,WE#,REF#
ZQ
QVLD
DNU,NF
T*
Total
2
VSS
DNU4
DNU4
DNU4
DNU4
DNU4
A6
A9
NF3
DK#
CS#
A16
DNU4
DNU4
QK1
DNU4
DNU4
ZQ
3
VEXT
DQ4
DQ5
DQ6
DQ7
DQ8
A7
VSS
VDD
VDD
VSS
A17
DQ14
DQ15
QK1#
DQ16
DQ17
VEXT
4
VSS
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
VDD
VSS
VDD
VDD
VSS
VDD
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
VSS
Description
Supply voltage
Ground
DQ power supply
DQ Ground
Supply voltage
Reference voltage
Termination voltage
Address - A0-22
Banks - BA0-2
I/O
Input data clock(Differential inputs)
Output data clocks(outputs)
Input clocks (CK, CK#)
Input data mask
Command control pins
External impedance (25–60Ω)
Data valid
Do not use, No function
JTAG - TCK,TMS,TDO,TDI
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 06/20/2012
5
6
7
8
Ball count
16
16
8
12
4
2
4
23
3
18
2
4
2
1
3
1
1
20
4
144
9
VSS
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
VDD
VSS
VDD
VDD
VSS
VDD
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
VSS
10
VEXT
DQ0
DQ1
QK0#
DQ2
DQ3
A2
VSS
VDD
VDD
VSS
A12
DQ9
DQ10
DQ11
DQ12
DQ13
VEXT
11
TMS
DNU4
DNU4
QK0
DNU4
DNU4
A1
A4
BA0
BA1
A14
A11
DNU4
DNU4
DNU4
DNU4
DNU4
TDO
12
TCK
VDD
VTT
VSS
A202
QVLD
A0
A3
CK
CK#
A13
A10
A19
DM
VSS
VTT
VDD
TDI
Notes:
NOTES:
1.
for future
use. This
mayThis
optionally
1)Reserved
Reserved
for future
use.
may be
connected to GND.
optionally
be connected to GND.
2. Reserved for future use. This signal is internally
2)
Reserved
forparasitic
futurecharacteristics
use. This signal
is
connected
and has
of an address
internally
input signal. connected and has parasitic
3. No function. Thisof
signal
internallyinput
connected
and has
characteristics
an isaddress
signal.
parasitic
characteristics
of be
a clock
input signal.
may
This
may
optionally
connected
to This
GND.
optionally be connected to GND.
3) No function. This signal is internally
4. Do not use. This signal is internally connected and has
connected
and has of
parasitic
parasitic characteristics
a I/O. Thischaracteristics
may optionally be
of
a clocktoinput
signal.
optionally
connected
GND. Note
that This
if ODT may
is enabled,
these
be
pinsconnected
are High-Z. to GND.
4) Do not use. This signal is internally
connected and has parasitic characteristics
of a I/O. This may optionally be connected
to GND. Note that if ODT is enabled, these
pins will be connected to VTT.
3
IS49NLC93200,IS49NLC18160,IS49NLC36800
1.3 288Mb (8Mx36) Common I/O BGA Ball-out (Top View)
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
1
VREF
VDD
VTT
A221
2
A21
A5
A8
BA2
DK0
DK1
REF#
WE#
A18
A15
VSS
VTT
VDD
VREF
Symbol
VDD
VSS
VDDQ
VSSQ
VEXT
VREF
VTT
A*
BA*
DQ*
DK*
QK*
CK*
DM
CS#,WE#,REF#
ZQ
QVLD
DNU
T*
Total
2
VSS
DQ8
DQ10
DQ12
DQ14
DQ16
A6
A9
DK0#
DK1#
CS#
A16
DQ24
DQ22
QK1
DQ20
DQ18
ZQ
3
VEXT
DQ9
DQ11
DQ13
DQ15
DQ17
A7
VSS
VDD
VDD
VSS
A17
DQ25
DQ23
QK1#
DQ21
DQ19
VEXT
4
VSS
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
VDD
VSS
VDD
VDD
VSS
VDD
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
VSS
Description
Supply voltage
Ground
DQ power supply
DQ Ground
Supply voltage
Reference voltage
Termination voltage
Address - A0-22
Banks - BA0-2
I/O
Input data clock(Differential inputs)
Output data clocks(outputs)
Input clocks (CK, CK#)
Input data mask
Command control pins
External impedance (25–60Ω)
Data valid
Do not use
JTAG - TCK,TMS,TDO,TDI
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 06/20/2012
5
6
7
8
Ball count
16
16
8
12
4
2
4
23
3
36
4
4
2
1
3
1
1
0
4
144
9
VSS
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
VDD
VSS
VDD
VDD
VSS
VDD
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
VSS
10
VEXT
DQ1
DQ3
QK0#
DQ5
DQ7
A2
VSS
VDD
VDD
VSS
A12
DQ35
DQ33
DQ31
DQ29
DQ27
VEXT
11
TMS
DQ0
DQ2
QK0
DQ4
DQ6
A1
A4
BA0
BA1
A14
A11
DQ34
DQ32
DQ30
DQ28
DQ26
TDO
12
TCK
VDD
VTT
VSS
2
A20
QVLD
A0
A3
CK
CK#
A13
A10
2
A19
DM
VSS
VTT
VDD
TDI
Notes:
1. Reserved for future use. This may optionally be
connected to GND.
2. Reserved for future use. This signal is internally
connected and has parasitic characteristics of an address
input signal. This may optionally be connected to GND.
4
IS49NLC93200,IS49NLC18160,IS49NLC36800
1.4 Ball Descriptions
Symbol
Type
A*
Input
BA*
Input
CK, CK#
Input
CS#
Input
DQ*
I/O
DK*, DK*#
Input
DM
Input
TCK
TMS,TDI
Input
Input
WE#, REF#
Input
VREF
Input
ZQ
I/O
QK*, QK*#
Output
QVLD
Output
TDO
Output
VDD
VDDQ
VEXT
VSS
VSSQ
VTT
A21
A22
DNU
NF
Supply
Supply
Supply
Supply
Supply
Supply
-
Description
Address inputs: Defines the row and column addresses for READ and WRITE operations. During a MODE
REGISTER SET, the address inputs define the register settings. They are sampled at the rising edge of
CK.
Bank address inputs: Selects to which internal bank a command is being applied to.
Input clock: CK and CK# are differential input clocks. Addresses and commands are latched on the rising
edge of CK. CK# is ideally 180 degrees out of phase with CK.
Chip select: CS# enables the command decoder when LOW and disables it when HIGH. When the
command decoder is disabled, new commands are ignored, but internal operations continue.
Data input: The DQ signals form the data bus. During READ commands, the data is referenced to both
edges of QK*. During WRITE commands, the data is sampled at both edges of DK.
Input data clock: DK* and DK*# are the differential input data clocks. All input data is referenced to
both edges of DK*. DK*# is ideally 180 degrees out of phase with DK*. For the x36 device, DQ0–DQ17
are referenced to DK0 and DK0# and DQ18–DQ35 are referenced to DK1 and DK1#. For the x9 and x18
devices, all DQ* are referenced to DK and DK#. All DK* and DK*# pins must always be supplied to the
device.
Input data mask: The DM signal is the input mask signal for WRITE data. Input data is masked when DM
is sampled HIGH. DM is sampled on both edges of DK (DK1 for the x36 configuration). Tie signal to
ground if not used.
IEEE 1149.1 clock input: This ball must be tied to VSS if the JTAG function is not used.
IEEE 1149.1 test inputs: These balls may be left as no connects if the JTAG function is not used.
Command inputs: Sampled at the positive edge of CK, WE# and REF# define (together with CS#) the
command to be executed.
Input reference voltage: Nominally VDDQ/2. Provides a reference voltage for the input buffers.
External impedance (25–60Ω): This signal is used to tune the device outputs to the system data bus
impedance. DQ output impedance is set to 0.2 × RQ, where RQ is a resistor from this signal to ground.
Connecting ZQ to GND invokes the minimum impedance mode.
Output data clocks: QK* and QK*# are opposite polarity, output data clocks. They are free running, and
during READs, are edge-aligned with data output from the memory. QK*# is ideally 180 degrees out of
phase with QK*. For the x36 device, QK0 and QK0# are aligned with DQ0-DQ17, and QK1 and QK1# are
aligned with DQ18-DQ35. For the x18 device, QK0 and QK0# are aligned with DQ0-DQ8, while QK1 and
QK1# are aligned with Q9-Q17. For the x9 device, all DQs are aligned with QK0 and QK0#.
Data valid: The QVLD pin indicates valid output data. QVLD is edge-aligned with QK* and QK*#.
IEEE 1149.1 test output: JTAG output. This ball may be left as no connect if the JTAG function is not
used.
Power supply: Nominally, 1.8V.
DQ power supply: Nominally, 1.5V or 1.8V. Isolated on the device for improved noise immunity.
Power supply: Nominally, 2.5V.
Ground.
DQ ground: Isolated on the device for improved noise immunity.
Power supply: Isolated termination supply. Nominally, VDDQ/2.
Reserved for future use: This signal is internally connected.
Reserved for future use: This signal is not connected and can be connected to ground.
Do not use: These balls may be connected to ground. Note that if ODT is enabled, these pins are High-Z.
No function: These balls can be connected to ground.
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 06/20/2012
5
IS49NLC93200,IS49NLC18160,IS49NLC36800
2 Electrical Specifications
2.1 Absolute Maximum Ratings
Item
I/O Voltage
Voltage on VEXT supply relative to VSS
Voltage on VDD supply relative to VSS
Voltage on VDDQ supply relative to VSS
Min
− 0.3
− 0.3
− 0.3
− 0.3
Max
VDDQ + 0.3
+ 2.8
+ 2.1
+ 2.1
Units
V
V
V
V
Note: Stress greater than those listed in this table may cause permanent damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect reliability.
2.2 DC Electrical Characteristics and Operating Conditions
Description
Supply voltage
Supply voltage
Isolated output buffer supply
Reference voltage
Termination voltage
Input high voltage
Input low voltage
Conditions
Symbol
VEXT
VDD
VDDQ
VREF
VTT
VIH
VIL
Output high current
VOH = VDDQ/2
IOH
Output low current
VOL = VDDQ/2
IOL
0V ≤ VIN ≤ VDD
0V ≤ VIN ≤ VDD
0V ≤ VIN ≤ VDDQ
ILC
ILI
ILO
IREF
Clock input leakage current
Input leakage current
Output leakage current
Reference voltage current
Min
2.38
1.7
1.4
0.49 x VDDQ
0.95 x VREF
VREF + 0.1
VSSQ − 0.3
(VDDQ/2)/
(1.15 x RQ/5)
(VDDQ/2)/
(1.15 x RQ/5)
−5
−5
−5
−5
Max
2.63
1.9
VDD
0.51 x VDDQ
1.05 x VREF
VDDQ + 0.3
VREF − 0.1
(VDDQ/2)/
(0.85 x RQ/5)
(VDDQ/2)/
(0.85 x RQ/5)
5
5
5
5
Units
V
V
V
V
V
V
V
Notes
A
9, 10, 11
A
9, 10, 11
2
2,3
4,5,6
7,8
2
2
µA
µA
µA
µA
Notes:
1. All voltages referenced to VSS (GND).
2. Overshoot: VIH (AC) ≤ VDD + 0.7V for t ≤ tCK/2. Undershoot: VIL (AC) ≥ –0.5V for t ≤ tCK/2. During normal operation, VDDQ must not exceed VDD. Control input signals
may not have pulse widths less than tCK/2 or operate at frequencies exceeding tCK (MAX).
3. VDDQ can be set to a nominal 1.5V ± 0.1V or 1.8V ± 0.1V supply.
4. Typically the value of VREF is expected to be 0.5 x VDDQ of the transmitting device. VREF is expected to track variations in VDDQ.
5. Peak-to-peak AC noise on VREF must not exceed ±2 percent VREF (DC).
6. VREF is expected to equal VDDQ/2 of the transmitting device and to track variations in the DC level of the same. Peak-to-peak noise (non-common mode) on VREF
may not exceed ±2 percent of the DC value. Thus, from VDDQ/2, VREF is allowed ±2 percent VDDQ/2 for DC error and an additional ±2 percent VDDQ/2 for AC noise.
This measurement is to be taken at the nearest VREF bypass capacitor.
7. VTT is expected to be set equal to VREF and must track variations in the DC level of VREF.
8. On-die termination may be selected using mode register A9 (for non-multiplexed address mode) or Ax9 (for multiplexed address mode). A resistance RTT from
each data input signal to the nearest VTT can be enabled. RTT = 125–185Ω at 95°C TC.
9. IOH and IOL are defined as absolute values and are measured at VDDQ /2. IOH flows from the device, IOL flows into the device.
10. If MRS bit A8 or Ax8 is 0, use RQ = 250Ω in the equation in lieu of presence of an external impedance matched resistor.
2.3 Capacitance (TA = 25 °C, f = 1MHz)
Parameter
Address / Control Input capacitance
I/O, Output, Other capacitance (DQ, DM, QK, QVLD)
Clock Input capacitance
JTAG pins
Symbol
CIN
CIO
CCLK
CJ
Test Conditions
VIN=0V
VIO=0V
VCLK=0V
VJ=0V
Min
1.5
3.5
2.0
2.0
Max
2.5
5.0
3.0
5.0
Units
pF
pF
pF
pF
Note. These parameters are not 100% tested and capacitance is not tested on ZQ pin.
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 06/20/2012
6
IS49NLC93200,IS49NLC18160,IS49NLC36800
2.4 Operating Conditions and Maximum Limits
Description
Symbol
ISB1(VDD) x9/x18
-18
55
-25E
53
-25
48
-33
48
-5
units
48
ISB1(VDD) x36
55
53
48
48
48
mA
ISB1(VEXT)
5
5
5
5
5
ISB2(VDD) x9/x18
365
293
288
233
189
ISB2(VDD) x36
365
293
288
233
189
ISB2(VEXT)
5
5
5
5
5
BL=2; Sequential bank access; Bank transitions once
every tRC; Half address transitions once every tRC; Read
followed by write sequence; continuous data during
WRITE commands
IDD1(VDD) x9/x18
465
380
348
305
255
IDD1(VDD) x36
485
400
374
343
292
IDD1(VEXT)
15
15
15
13
13
BL = 4; Sequential bank access; Bank transitions once
every tRC; Half address transitions once every tRC; Read
followed by write sequence; Continuous data during
WRITE commands
IDD2(VDD) x9/x18
475
400
362
319
269
IDD2(VDD) x36
510
425
418
389
339
IDD2(VEXT)
15
15
15
13
13
BL = 8; Sequential bank access; Bank transitions once
every tRC; half address transitions once every tRC; Read
followed by write sequence; continuous data during
WRITE commands
IDD3 (VDD) x9/x18
505
430
408
368
286
IDD3 (VDD) x36
625
540
460
425
425
IDD3(VEXT)
20
20
20
18
18
IREF1(VDD) x9/x18
995
790
785
615
430
IREF1(VDD) x36
995
915
785
615
430
IREF1(VEXT)
80
80
80
70
70
IREF2(VDD) x9/x18
425
330
325
267
221
IREF2(VDD) x36
425
390
326
281
227
Condition
Standby
current
tCK = idle; All banks idle; No inputs toggling
Active
standby
current
CS# =1; No commands; Bank address incremented and
half address/data change once every 4 clock cycles
Operational
current
Burst
refresh
current
Eight-bank cyclic refresh; Continuous address/data;
Command bus remains in refresh for all eight banks
Distributed
refresh
current
Single-bank refresh; Sequential bank access; Half
address transitions once every tRC, continuous data
Operating
burst
write
current
Operating
burst
read current
IREF2(VEXT)
20
20
20
18
18
BL=2; Cyclic bank access; Half of address bits change
every clock cycle; Continuous data; measurement is
taken during continuous WRITE
IDD2W(VDD) x9/x18
1335
980
970
819
597
IDD2W(VDD) x36
1545
1105
990
914
676
IDD2W(VEXT)
50
50
50
40
40
BL=4; Cyclic bank access; Half of address bits change
every 2 clock cycles; Continuous data; Measurement is
taken during continuous WRITE
IDD4W(VDD) x9/x18
985
785
779
609
439
IDD4W(VDD) x36
1185
887
882
790
567
IDD4W(VEXT)
30
30
30
25
25
BL=8; Cyclic bank access; Half of address bits change
every 4 clock cycles; continuous data; Measurement is
taken during continuous WRITE
IDD8W(VDD) x9/x18
770
675
668
525
364
IDD8W(VDD) x36
1095
755
750
580
580
IDD8W(VEXT)
30
30
30
25
25
BL=2; Cyclic bank access; Half of address bits change
every clock cycle; Measurement is taken during
continuous READ
IDD2R(VDD) x9/x18
1225
940
935
735
525
IDD2R(VDD) x36
1270
995
990
795
565
IDD2R(VEXT)
50
50
50
40
40
BL=4; Cyclic bank access; Half of address bits change
every clock cycle; Measurement is taken during
continuous READ
IDD4R(VDD) x9/x18
860
685
680
525
380
IDD4R(VDD) x36
920
735
730
660
455
IDD4R(VEXT)
30
30
30
25
25
BL=8; Cyclic bank access; Half of address bits change
every clock cycle; Measurement is taken during
continuous READ
IDD8R(VDD) x9/x18
655
575
570
450
310
IDD8R(VDD) x36
855
665
660
505
505
IDD8R(VEXT)
30
30
30
25
25
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 06/20/2012
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
7
IS49NLC93200,IS49NLC18160,IS49NLC36800
Notes:
1) IDD specifications are tested after the device is properly initialized. +0°C ≤ TC ≤ +95°C; +1.7V ≤ VDD ≤ +1.9V, +2.38V ≤ VEXT ≤ +2.63V, +1.4V ≤ VDDQ ≤ VDD, VREF =
VDDQ/2.
2) tCK = tDK = MIN, tRC = MIN.
3) Definitions for IDD conditions:
a.
LOW is defined as VIN ≤ VIL(AC) MAX.
b. HIGH is defined as VIN ≥ VIH(AC) MIN.
c.
Stable is defined as inputs remaining at a HIGH or LOW level.
d. Floating is defined as inputs at VREF = VDDQ/2.
e. Continuous data is defined as half the D or Q signals changing between HIGH and LOW every half clock cycle (twice per clock).
f.
Continuous address is defined as half the address signals changing between HIGH and LOW every clock cycle (once per clock).
g.
Sequential bank access is defined as the bank address incrementing by one every tRC.
h. Cyclic bank access is defined as the bank address incrementing by one for each command access. For BL = 2 this is every clock, for BL = 4 this is every
other clock, and for BL = 8 this is every fourth clock.
4) CS# is HIGH unless a READ, WRITE, AREF, or MRS command is registered. CS# never transitions more than once per clock cycle.
5) IDD parameters are specified with ODT disabled.
6) Tests for AC timing, IDD, and electrical AC and DC characteristics may be conducted at nominal reference/supply voltage levels, but the related specifications
and device operations are tested for the full voltage range specified.
7) IDD tests may use a VIL-to-VIH swing of up to 1.5V in the test environment, but input timing is still referenced to VREF (or to the crossing point for CK/CK#).
Parameter specifications are tested for the specified AC input levels under normal use conditions. The minimum slew rate for the input signals used to test the
device is 2 V/ns in the range between VIL(AC) and VIH(AC).
2.5 Recommended AC Operating Conditions
(+0°C ≤ TC ≤ +95°C; +1.7V ≤ VDD ≤ +1.9V, unless otherwise noted.)
Parameter
Symbol
Input HIGH voltage
VIH(AC)
Input LOW voltage
VIL(AC)
Min
VREF + 0.2
-
Max
VREF – 0.2
Units
V
V
Max
+110
+100
+95
Units
°C
°C
°C
Notes:
1. Overshoot: VIH (AC) ≤ VDDQ + 0.7V for t ≤ tCK/2.
2. Undershoot: VIL (AC) ≥ – 0.5V for t ≤ tCK/2.
3. Control input signals may not have pulse widths less than tCKH(MIN) or operate at cycle rates less than tCK(MIN.).
2.6 Temperature and Thermal Impedance
Temperature Limits
Parameter
1
Reliability junction temperature
2
Operating junction temperature
3
Operating case temperature
Symbol
TJ
TJ
TC
Min
0
0
0
Notes:
1. Temperatures greater than 110°C may cause permanent damage to the device. This is a stress rating only and functional operation of the device at or above this
is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability of the part.
2. Junction temperature depends upon cycle time, loading, ambient temperature, and airflow.
3. MAX operating case temperature; TC is measured in the center of the package. Device functionality is not guaranteed if the device exceeds maximum TC during
operation.
Thermal Resistance
Package
Substrate
144-ball FBGA
4-layer
Theta-ja
(Airflow = 0m/s)
20.6
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 06/20/2012
Theta-ja
(Airflow = 1m/s)
19.1
Theta-ja
(Airflow = 2m/s)
17.2
Theta-jc
2.4
Unit
C/W
8
IS49NLC93200,IS49NLC18160,IS49NLC36800
2.7 AC Electrical Characteristics (1, 2, 3, 4)
Description
Input clock cycle time
Input data clock cycle
time
Clock jitter: period (5, 6)
Clock jitter:
cycle-to-cycle
Clock HIGH time
Clock LOW time
Clock to input data
clock
Mode register set
cycle time to any
command
Address/command
and input setup time
Data-in and data
mask to DK setup time
Address/command
and input hold time
Data-in and data
mask to DK
hold time
Output data clock
HIGH time
Output data clock
LOW time
Half-clock period
QK edge to clock
edge skew
QK edge to output
data edge (7)
QK edge to any
output data edge (8)
QK edge to QVLD
Data valid window
Average periodic refresh
interval (9)
-18 (1.875ns
@tRC=15ns)
-25E (2.5ns
@tRC=15ns)
-33 (3.3ns
@tRC=20ns)
-5 (5ns
@tRC=20ns)
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
tCK
1.875
2.7
2.5
5.7
2.5
5.7
3.3
5.7
5.0
5.7
ns
tDK
tCK
–
tCK
–
tCK
–
tCK
–
tCK
–
ns
tJITPER
–100
100
–150
150
–150
150
–200
200
–250
250
ps
tJITCC
–
200
–
300
–
300
–
400
–
500
ps
tCKH/tDKH
0.45
0.55
0.45
0.55
0.45
0.55
0.45
0.55
0.45
0.55
tCK
tCKL/tDKL
0.45
0.55
0.45
0.55
0.45
0.55
0.45
0.55
0.45
0.55
tCK
tCKDK
–0.3
0.3
–0.45
0.5
–0.45
0.5
–0.45
1.2
–0.3
1.5
ns
tMRSC
6
–
6
–
6
–
6
–
6
–
tCK
tAS/tCS
0.3
–
0.4
–
0.4
–
0.5
–
0.8
–
ns
tDS
0.17
–
0.25
–
0.25
–
0.3
–
0.4
–
ns
tAH/tCH
0.3
–
0.4
–
0.4
–
0.5
–
0.8
–
ns
tDH
0.17
–
0.25
–
0.25
–
0.3
–
0.4
–
ns
tQKH
0.9
1.1
0.9
1.1
0.9
1.1
0.9
1.1
0.9
1.1
tCKH
tQKL
0.9
1.1
0.9
1.1
0.9
1.1
0.9
1.1
0.9
1.1
tCKL
tQHP
MIN(tQKH,
tQKL)
–
MIN(tQKH,
tQKL)
–
MIN(tQKH,
tQKL)
–
MIN(tQKH,
tQKL)
–
MIN(tQKH,
tQKL)
–
tCKQK
–0.2
0.2
–0.25
0.25
–0.25
0.25
–0.3
0.3
–0.5
0.5
ns
tQKQ0,
tQKQ1
–0.12
0.12
–0.2
0.2
–0.2
0.2
–0.25
0.25
–0.3
0.3
ns
tQKQ
–0.22
0.22
–0.3
0.3
–0.3
0.3
–0.35
0.35
–0.4
0.4
ns
tQKVLD
–0.22
0.22
–0.3
0.3
–0.3
0.3
–0.35
0.35
–0.4
0.4
ns
–
tQHP (tQKQx
[MAX] +
|tQKQx
[MIN]|)
–
0.49
–
0.49
Symbol
tDVW
tREFI
-25 (2.5ns
@tRC=20ns)
tQHP -
tQHP -
tQHP -
tQHP -
(tQKQx
(tQKQx
(tQKQx
(tQKQx
[MAX] +
–
[MAX] +
–
[MAX] +
–
[MAX] +
|tQKQx
|tQKQx
|tQKQx
|tQKQx
[MIN]|)
[MIN]|)
[MIN]|)
[MIN]|)
–
0.49
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 06/20/2012
–
0.49
–
0.49
–
Units
μs
9
IS49NLC93200,IS49NLC18160,IS49NLC36800
Notes:
1. All timing parameters are measured relative to the crossing point of CK/CK#, DK/DK# and to the crossing point with VREF of the command, address, and data
signals.
2. Outputs measured with equivalent load:
VTT
50 •
DQ
Test Point
10 pF
3.
4.
5.
6.
7.
8.
9.
Tests for AC timing, IDD, and electrical AC and DC characteristics may be conducted at nominal reference/supply voltage levels, but the related specifications
and device operations are tested for the full voltage range specified.
AC timing may use a VIL-to-VIH swing of up to 1.5V in the test environment, but input timing is still referenced to VREF (or to the crossing point for CK/CK#), and
parameter specifications are tested for the specified AC input levels under normal use conditions. The minimum slew rate for the input signals used to test the
device is 2 V/ns in the range between VIL(AC) and VIH(AC).
Clock phase jitter is the variance from clock rising edge to the next expected clock rising edge.
Frequency drift is not allowed.
For a x36 device, DQ0-DQ17 is referenced to tQKQ0 and DQ18-DQ35 is referenced to tQKQ1. For a x18 device, DQ0-DQ8 is referenced to tQKQ0 and DQ9-DQ17 is
referenced to tQKQ1. For a x9 device, tQKQ0 is referenced to DQ0-DQ8.
tQKQ takes into account the skew between any QKx and any Q.
To improve efficiency, eight AREF commands (one for each bank) can be posted to the memory on consecutive cycles at periodic intervals of 1.95μs.
2.8 Clock Input Conditions
Differential Input Clock Operating Conditions
Parameter
Clock Input Voltage Level
Clock Input Differential Voltage Level
Clock Input Differential Voltage Level
Clock Input Crossing Point Voltage Level
Symbol
VIN(DC)
VID(DC)
VID(AC)
VIX(AC)
Min
-0.3
0.2
0.4
VDDQ/2-0.15
Max
VDDQ+0.3
VDDQ+0.6
VDDQ+0.6
VDDQ/2+0.15
Units
V
V
V
V
Notes
8
8
9
Clock Input Example
CK#
VDDQ/2+0.15V, VIX(AC) MAX
VDDQ/2
(10)
VID(DC)(11)
VID(AC)(12)
VDDQ/2-0.15V, VIX(AC) MIN
CK
Notes:
1. DKx and DKx# have the same requirements as CK and CK#.
2. All voltages referenced to VSS.
3. Tests for AC timing, IDD and electrical AC and DC characteristics may be conducted at normal reference/supply voltage levels; but the related specifications and
device operations are tested for the full voltage range specified.
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 06/20/2012
10
IS49NLC93200,IS49NLC18160,IS49NLC36800
4.
7.
8.
AC timing and IDD tests may use a VIL-to-VIH swing of up to 1.5V in the test environment, but input timing is still referenced to VREF (or the crossing point for
CK/CK#), and parameters specifications are tested for the specified AC input levels under normal use conditions. The minimum slew rate for the input signals
used to test the device is 2V/ns in the range between VIL(AC) and VIH(AC).
The AC and DC input level specifications are as defined in the HSTL Standard (i.e. the receiver will effectively switch as a result of the signal crossing the AC input
level, and will remain in that state as long as the signal does not ring back above[below] the DC input LOW[HIGH] level).
The CK/CK# input reference level (for timing referenced to CK/CK#) is the point at which CK and CK# cross. The input reference level for signal other than CK/CK#
is VREF.
CK and CK# input slew rate must be ≥ 2V/ns (≥ 4V/ns if measured differentially).
VID is the magnitude of the difference between the input level on CK and input level on CK#.
9.
10.
11.
12.
The value of VIX is expected to equal VDDQ/2 of the transmitting device and must track variations in the DC level of the same.
CK and CK# must cross within the region.
CK and CK# must meet at least VID(DC) (MIN.) when static and centered on VDDQ/2.
Minimum peak-to-peak swing.
5.
6.
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 06/20/2012
11
IS49NLC93200,IS49NLC18160,IS49NLC36800
3 Functional Descriptions
3.1 Power-up and Initialization (1)
The RLDRAM 2 Memory must be powered-up and initialized using the specific steps listed below:
(2)
1. Apply power by ramping up supply voltages VEXT, VDD, VDDQ, VREF, and VTT. Apply VDD and VEXT before or at the same time as VDDQ .
Power-up sequence begins when both VDD and VEXT approach their nominal levels. Afterwards, apply VDDQ before or at the same
time as VREF and VTT. Once the supply voltages are stable, clock inputs CK/CK# and DK/DK# can be applied. Register NOP
commands to the control pins to avoid issuing unwanted commands to the device.
2. Keep applying stable conditions for a minimum of 200 µs.
3. Register at least three consecutive MRS commands consisting of two or more dummy MRS commands and one valid MRS
command. Timing parameter tMRSC is not required to be met during these consecutive MRS commands but asserting a LOW logic
to the address signals is recommended.
4. tMRSC timing delay after the valid MRS command, Auto Refresh commands to all 8 banks and 1,024 NOP commands must be
issued prior to normal operation. The Auto Refresh commands to the 8 banks can be issued in any order with respect to the
1,024 NOP commands. Please note that the tRC timing parameter must be met between an Auto Refresh command and a valid
command in the same bank.
5. The device is now ready for normal operation.
Notes:
1. Operational procedure other than the one listed above may result in undefined operations and may permanently damage the device.
2. VDDQ can be applied before VDD but will result in all DQ data pin, DM, and output pins to go logic HIGH (instead of tri-state) and will remain HIGH until the VDD is
the same level as VDDQ. This method is not recommended to avoid bus conflicts during the power-up.
3.2 Power-up and Initialization Flowchart
VDD and VEXT
ramp up (1)
VDDQ ramp up (1)
Issue dummy
2nd MRS command (2)
VREF and VTT
ramp up (1)
Issue valid
3rd MRS command (2)
Apply stable
CK/CK# and DK/DK#
Assert NOP for tMRS
Wait 200µs minimum
Issue AREF
commands to all 8
banks (3)
Issue dummy
1st MRS command (2)
Issue 1,024 NOP
commands (3)
RLDRAM is now ready
for normal operation
Notes:
1. The supply voltages can be ramped up simultaneously.
2. The dummy and valid MRS commands must be issued in consecutive clock cycles. At least two dummy MRS commands are required. It is recommended to
assert a LOW logic on the address signals during the dummy MRS commands.
3. The Auto Refresh commands can be issued in any order with respect to the 1,024 NOP commands. However, timing parameter tRC must be met before issuing
any valid command in a bank after an AREF command to the same bank has been issued.
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 06/20/2012
12
IS49NLC93200,IS49NLC18160,IS49NLC36800
3.3 Power-up and Initialization Timing Diagram
Non-multiplexed Address Mode
VEXT, VDD,
VDDQ, VREF,
VTT
tCKH
tCKL
tCK
CK
~~
~~
~~
~~
CK#
Command
NOP
MRS2
MRS1,2
MRS1,2
NOP
AREFBA0
NOP
tMRSC
200us(Min)
AREFBA7
Refresh all 8 banks
Any5
1024 NOPs
Don’t care
Notes:
1. It is recommended that the address input signals be driven LOW during the dummy MRS commands.
2. A10–A17 must be LOW.
3. DLL must be reset if tCK or VDD are changed.
4. CK and CK# must be separated at all times to prevent invalid commands from being issued.
5. The Auto Refresh commands can be issued in any order with respect to the 1,024 NOP commands. However, timing parameter tRC must be met before issuing
any valid command in a bank after an AREF command to the same bank has been issued.
Multiplexed Address Mode
VEXT, VDD,
VDDQ,
VREF, VTT
CK
tCKH
CK#
Command
tCKL
tCK
~
~
~~
NOP
NOP
ADDRESS
~~
~~
~~
MRS
MRS
MRS
MRS
NOP
AREF
AREF
Any
A1,2
A1,2
A2,3
Ax2,4
Ay
Bank0
Bank7
Any
200us(Min)
tMRSC
tMRSC
Refresh all 8
banks
1024NOPs
6
Don’t care
Notes:
1. It is recommended that the address input signals be driven LOW during the dummy MRS commands.
2. A10–A18 must be LOW.
3. Set address A5 HIGH. This enables the part to enter multiplexed address mode when in non-multiplexed mode operation. Multiplexed address mode can also be
entered at some later time by issuing an MRS command with A5 HIGH. Once address bit A5 is set HIGH, tMRSC must be satisfied before the two cycle
multiplexed mode MRS command is issued.
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 06/20/2012
13
IS49NLC93200,IS49NLC18160,IS49NLC36800
4.
5.
6.
Address A5 must be set HIGH. This and the following step set the desired mode register once the memory is in multiplexed address mode.
CK and CK# must be separated at all times to prevent invalid commands from being issued.
The Auto Refresh commands can be issued in any order with respect to the 1,024 NOP commands. However, timing parameter tRC must be met before issuing
any valid command (Any) in a bank after an AREF command to the same bank has been issued.
3.4 Mode Register Setting and Features
MRS - Multiplexed Mode
MRS - Non-Multiplexed Mode
CK
CK#
CS#
Any
Valid
WE#
Any
Valid
REF#
ADD
Valid
Code
Ax
Valid
Ay
tMRSC
tMRSC
Don’t care
Note: The MRS command can only be issued when all banks are idle and no bursts are in progress.
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 06/20/2012
14
IS49NLC93200,IS49NLC18160,IS49NLC36800
The Mode Register Set command stores the data for controlling the various operating modes of the memory using address inputs
A0-A17 as mode registers. During the MRS command, the cycle time and the read/write latency of the memory can be selected from
different configurations. The MRS command also programs the memory to operate in either Multiplexed Address Mode or Nonmultiplexed Address Mode. In addition, several features can be enabled using the MRS command. These are the DLL, Drive
Impedance Matching, and On-Die Termination (ODT). tMRSC must be met before any command can be issued. tMRSC is measured like
the picture above in both Multiplexed and Non-multiplexed mode.
Mode Register Diagram (Non-multiplexed Address Mode)
Address
A9
Mode Register
Field
0
1
1
A10-17 M10-17
0
A9
M9
ODT
A8
M8
IM
A7
M7
DLL
A6
M6
NA2
A5
M5
AM
A4
M4
A3
M3
A2
M2
A1
M1
A0
M0
A2
0
0
0
0
1
1
1
1
A1
0
0
1
1
0
0
1
1
BL
A0
0
1
0
1
0
1
0
1
A8
0
1
Drive Impedance
Internal 50Ω 5 (Default)
External(ZQ)
A7
0
1
DLL Reset
DLL reset4 (Default)
DLL enable
A5
0
1
Address MUX
Non-multiplexed (Default)
Multiplexed
A4
0
0
1
1
Config
On-Die Termination
Off (Default)
On
A3
0
1
0
1
Burst Length(BL)
2 (Default)
4
8
Reserved
Read/Write Latency and Cycle Time Configuration6,7
Configuration
tRC(tCK)
tRL(tCK)
tWL(tCK)
4
4
5
1 3 (Default)
3
4
4
5
1
2
6
6
7
3
8
8
9
3,8
3
3
4
4
5
5
5
6
Reserved
n/a
n/a
n/a
Reserved
n/a
n/a
n/a
Valid Frequency Range
(MHz)
266-175
266-175
400-175
533-175
200-175
333-175
n/a
n/a
Notes:
1. A10-A17 must be set to zero; A18-An are "Don't cares."
2. A6 not used in MRS.
3. BL = 8 is not available.
4. DLL RESET turns the DLL off.
5. ±30 % temperature variation.
6. tRC < 20ns in any configuration is only available with -25E and -18 speed grades.
7. Minimum operating frequency for -18 is 370MHz.
8. The minimum tRC is typically 3 cycles, except in the case of a WRITE followed by a READ to the same bank. In this instance the minimum tRC is 4 cycles.
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 06/20/2012
15
IS49NLC93200,IS49NLC18160,IS49NLC36800
Mode Register Diagram (Multiplexed Address Mode)
A8
M8
IM
A9
M7
DLL
A8
M6
NA5
A5
M5
AM
A4
M4
A3
M3
A4
M2
A3
M1
A0
BL
1
External(ZQ)
A7
0
1
DLL Reset
DLL reset4 (Default)
DLL enable
A5
0
1
Address MUX
Non-multiplexed (Default)
Multiplexed
A4
0
0
1
1
Config
A3
0
1
0
1
Burst Length(BL)
2 (Default)
4
8
Reserved
M0
Ay4
0
0
0
0
1
1
1
1
Ay3
0
0
1
1
0
0
1
1
Ax0
0
1
0
1
0
1
0
1
Read/Write Latency and Cycle Time Configuration8,9
Configuration
tRC(tCK)
tRL(tCK)
tWL(tCK)
1 2 (Default)
4
5
6
2
4
5
6
1
2
6
7
8
3
8
9
10
3
4
5
4 2,10
5
5
6
7
Reserved
n/a
n/a
n/a
Reserved
n/a
n/a
n/a
Valid Frequency
Range (MHz)
266-175
266-175
400-175
533-175
200-175
333-175
n/a
n/a
Notes:
1. A10-A18 must be set to zero; A18-An are "Don't cares."
2. BL = 8 is not available.
3. ±30 % temperature variation.
4. DLL RESET turns the DLL off.
5. Ay = 8 is not used in MRS.
6. BA0-BA2 are "Don't care."
7. Addresses A0, A3, A4, A5, A8, and A9 must be set as shown in order to activate the mode register in the multiplexed address mode.
8. tRC < 20ns in any configuration is only available with -25E and -18 speed grades.
9. Minimum operating frequency for -18 is 370MHz.
10. The minimum tRC is typically 3 cycles, except in the case of a WRITE followed by a READ to the same bank. In this instance the minimum tRC is 4 cycles.
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 06/20/2012
16
IS49NLC93200,IS49NLC18160,IS49NLC36800
3.5 Mode Register Bit Description
Configuration
The cycle time and read/write latency can be configured from the different options shown in the Mode Register Diagram. In order to
maximize data bus utilization, the WRITE latency is equal to READ latency plus one. The read and write latencies are increased by
one clock cycle during multiplexed address mode compared to non-multiplexed mode.
Burst Length
The burst length of the read and write accesses to memory can be selected from three different options: 2, 4, and 8. Changes in the
burst length affect the width of the address bus and is shown in the Burst Length and Address Width Table. The data written during a
prior burst length setting is not guaranteed to be accurate when the burst length of the device is changed.
Burst Length and Address Width Table
Burst Length
288Mb Address Bus
x9
x18
x36
2
A0-A20
A0-A19
A0-A18
4
A0-A19
A0-A18
A0-A17
8
A0-A18
A0-A17
A0-A16
DLL Reset
The default setting for this option is LOW, whereby the DLL is disabled. Once the mode register for this feature is set HIGH, 1024
cycles (5μs at 200 MHz) are needed before a READ command can be issued. This time allows the internal clock to be synchronized
with the external clock. Failing to wait for synchronization to occur may result in a violation of the tCKQK parameter. A reset of the DLL
is necessary if tCK or VDD is changed after the DLL has already been enabled. To reset the DLL, an MRS command must be issued
where the DLL Reset Mode Register is set LOW. After waiting tMRSC, a subsequent MRS command should be issued whereby the DLL
Reset Mode Register is set HIGH. 1024 clock cycles are then needed before a READ command is issued.
Drive Impedance Matching
The RLDRAM 2 Memory is equipped with programmable impedance output buffers. The purpose of the programmable impedance
output buffers is to allow the user to match the driver impedance to the system. To adjust the impedance, an external precision
resistor (RQ) is connected between the ZQ ball and VSS. The value of the resistor must be five times the desired impedance. For
example, a 300Ω resistor is required for an output impedance of 60Ω. The range of RQ is 125–300Ω, which guarantees output
impedance in the range of 25–60Ω (within 15 percent). Output impedance updates may be required because over time variations
may occur in supply voltage and temperature. When the external drive impedance is enabled in the MRS, the device will periodically
sample the value of RQ. An impedance update is transparent to the system and does not affect device operation. All data sheet
timing and current specifications are met during an update. When the Drive Impedance Mode Register is set LOW during the MRS
command, the memory provides an internal impedance at the output buffer of 50Ω (±30% with temperature variation). This
impedance is also periodically sampled and adjusted to compensate for variation in supply voltage and temperature.
Address Multiplexing
Although the RLDRAM 2 Memory is capable of accepting all the addresses in a single rising clock edge, this memory can be
programmed to operate in multiplexed address mode, which is very similar to a traditional DRAM. In multiplexed address mode, the
address can be sent to the memory in two parts within two consecutive rising clock edges. This minimizes the number of address
signal connections between the controller and the memory by reducing the address bus to a maximum of only 11 lines. Since the
memory requires two clock cycles to read and write the data, data bus efficiency is affected when operating in continuous burst
mode with a burst length of 2 setting. Bank addresses are provided to the memory at the same time as the WRITE and READ
commands together with the first address part, Ax. The second address part, Ay, is then issued to the memory on the next rising
clock edge. AREF commands only require the bank address. Since AREF commands do not need a second consecutive clock for
address latching, they may be issued on consecutive clocks.
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 06/20/2012
17
IS49NLC93200,IS49NLC18160,IS49NLC36800
Address Mapping in Multiplexed Address Mode
Data Width
Burst Length
2
X36
4
8
2
X18
4
8
2
X9
4
8
Address
Ball
Ax
Ay
Ax
Ay
Ax
A0
A0
X
A0
X
A0
A3
A3
A1
A3
A1
A3
A4
A4
A2
A4
A2
A4
A5
A5
X
A5
X
A5
A8
A8
A6
A8
A6
A8
A9
A9
A7
A9
A7
A9
A10
A10
X
A10
X
A10
A13
A13
A11
A13
A11
A13
A14
A14
A12
A14
A12
A14
A17
A17
A16
A17
A16
X
A18
A18
A15
X
A15
X
Ay
Ax
Ay
Ax
Ay
Ax
X
A0
X
A0
X
A0
A1
A3
A1
A3
A1
A3
A2
A4
A2
A4
A2
A4
X
A5
X
A5
X
A5
A6
A8
A6
A8
A6
A8
A7
A9
A7
A9
A7
A9
X
A10
A19
A10
X
A10
A11
A13
A11
A13
A11
A13
A12
A14
A12
A14
A12
A14
A16
A17
A16
A17
A16
A17
A15
A18
A15
A18
A15
X
Ay
Ax
Ay
Ax
Ay
Ax
X
A0
A20
A0
X
A0
A1
A3
A1
A3
A1
A3
A2
A4
A2
A4
A2
A4
X
A5
X
A5
X
A5
A6
A8
A6
A8
A6
A8
A7
A9
A7
A9
A7
A9
X
A10
A19
A10
A19
A10
A11
A13
A11
A13
A11
A13
A12
A14
A12
A14
A12
A14
A16
A17
A16
A17
A16
A17
A15
A18
A15
A18
A15
A18
Ay
X
A1
A2
X
A6
A7
X
A11
A12
A16
A15
Note: X = Don’t Care.
On-Die Termination (ODT)
If the ODT is enabled, the DQs and DM are terminated to VTT with a resistance RTT. The command, address, QVLD, and clock signals
are not terminated. Figure 3.1 shows the equivalent circuit of a DQ receiver with ODT. The ODT function is dynamically switched off
when a DQ begins to drive after a READ command is issued. Similarly, ODT is designed to switch on at the DQs after the memory has
issued the last piece of data. The DM pin will always be terminated.
ODT DC Parameters Table
Description
Termination Voltage
On-die termination
Symbol
VTT
RTT
Min
0.95 x VREF
125
Max
1.05 x VREF
185
Units
V
Ω
Notes
1, 2
3
Notes:
1. All voltages referenced to VSS (GND).
2. VTT is expected to be set equal to VREF and must track variations in the DC level of VREF.
3. The RTT value is measured at 95°C TC.
VTT
Switch
RTT
Receiver
DQ
Figure 3.1 ODT Equivalent Circuit
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 06/20/2012
18
IS49NLC93200,IS49NLC18160,IS49NLC36800
3.6 Deselect/No Operation (DESL/NOP)
The Deselect command is used to prevent unwanted operations from being performed in the memory device during wait or idle
states. Operations already registered to the memory prior to the assertion of the Deselect command will not be cancelled.
3.7 Read Operation (READ)
The Read command performs burst-oriented data read accesses in a bank of the memory device. The Read command is initiated by
registering the WE# and REF# signals logic HIGH while the CS# is in logic LOW state. In non-multiplexed address mode, both an
address and a bank address must be provided to the memory during the assertion of the Read command. In multiplexed mode, the
bank address and the first part of the address, Ax, must be supplied together with the Read command. The second part of the
address, Ay, must be latched to the memory on the subsequent rising edge of the CK clock. Data being accessed will be available in
the data bus a certain amount of clock cycles later depending on the Read Latency Configuration setting.
Data driven in the DQ signals are edge-aligned to the free-running output data clocks QKx and QKx#. A half clock cycle before the
read data is available on the data bus, the data valid signal, QVLD, will transition from logic LOW to HIGH. The QVLD signal is also
edge-aligned to the data clock QKx and QKx#.
If no other commands have been registered to the device when the burst read operation is finished, the DQ signals will go to High-Z
state. The QVLD signal transition from logic HIGH to logic LOW on the last bit of the READ burst. Please note that if CK/CK# violates
the VID (DC) specification while a READ burst is occurring, QVLD will remain HIGH until a dummy READ command is registered. The
QK clocks are free-running and will continue to cycle after the read burst is complete. Back-to-back READ commands are permitted
which allows for a continuous flow of output data.
CK#
Non-Multiplexed
Mode
CK#
CK
CK
CS#
CS#
WE#
WE#
REF#
REF#
Multiplexed
Mode
ADDRESS
A
ADDRESS
Ax
BANK
ADDRESS
BA*
BANK
ADDRESS
BA*
Ay
Don’t care
Read Command
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 06/20/2012
19
IS49NLC93200,IS49NLC18160,IS49NLC36800
0
tCKH
1
2
3
4
5
6
RD
RD
NOP
NOP
NOP
NOP
NOP
BA2, A2
BA3, A3
tCKL
tCK
CK#
CK
Command
Address
Read Latency = 4
tQKVLD
QVLD
tQKVLD
tQKQ
DQ
Q2-1
tCKQK
tQKH
tQKQ
Q2-2
Q3-1
Q3-2
tQKL
QKx#
QKx
Don’t Care
Basic READ Burst with QVLD: BL=2 & RL=4
Notes:
1. Minimum READ data valid window can be expressed as MIN(tQKH, tQKL) – 2 x MAX(tQKQx).
2. tCKH and tCKL are recommended to have 50% / 50% duty.
3. tQKQ0 is referenced to DQ0–DQ17 in x36 and DQ0–DQ8 in x18. tQKQ1 is referenced to DQ18–DQ35 in x36 and DQ9–DQ17 in x18.
4. tQKQ takes into account the skew between any QKx and any DQ.
5. tCKQK is specified as CK rising edge to QK rising edge.
3.8 Write Operation (WRITE)
The Write command performs burst-oriented data write accesses in a bank of the memory device. The Write command is initiated
by registering the REF# signal logic HIGH while the CS# and WE# signals are in logic LOW state. In non-multiplexed address mode,
both an address and a bank address must be provided to the memory during the assertion of the Write command. In multiplexed
mode, the bank address and the first part of the address, Ax, must be supplied together with the Write command. The second part
of the address, Ay, must be latched to the memory on the subsequent rising edge of the CK clock. Input data to be written to the
device can be registered several clock cycles later depending on the Write Latency Configuration setting. The write latency is always
one cycle longer than the programmed read latency. The DM signal can mask the input data by setting this signal logic HIGH.
At least one NOP command in between a Read and Write commands is required in order to avoid data bus contention. The setup
and hold times for DM and data signals are tDS and tDH, which are referenced to the DK clocks.
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 06/20/2012
20
IS49NLC93200,IS49NLC18160,IS49NLC36800
CK#
Non-Multiplexed
Mode
CK#
CK
CK
CS#
CS#
WE#
WE#
REF#
REF#
Multiplexed
Mode
ADDRESS
A
ADDRESS
Ax
BANK
ADDRESS
BA*
BANK
ADDRESS
BA*
Ay
Don’t care
Write Command
0
1
2
3
4
5
6
7
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CK#
CK
DKx#
tCKDK
DKx
Command
Address
WR
BA1, A1
Write Latency = 5
DM
tDS tDH
D1-0
DQ
Masked Data
D1-2
D1-3
Don’t Care
D1-4
Undefined
Basic WRITE Burst with DM Timing: BL=4 & WL=5
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 06/20/2012
21
IS49NLC93200,IS49NLC18160,IS49NLC36800
0
1
2
3
4
5
6
7
8
9
WR
NOP
RD
RD
NOP
NOP
NOP
NOP
NOP
NOP
BA2, A2
BA3, A3
CK#
CK
Command
Address
BA1,A1
Read Latency = 4
Write Latency = 5
DKx
DKx#
DQ
D1-1
D1-2
Q2-1
Q2-2
Q3-1
Q3-2
QVLD
QKx
QKx#
Don’t Care
Undefined
Write Followed by Read: BL=2 RL=4 & WL=5
3.9 Auto Refresh Command (AREF)
The Auto Refresh command performs a refresh cycle on one row of a specific bank of the memory. Only bank addresses are required
together with the control the pins. Therefore, Auto Refresh commands can be issued on subsequent CK clock cycles on both
multiplexed and non-multiplexed address mode. Any command following an Auto Refresh command must meet a tRC timing delay
or later.
tCKH
tCKL
0
tCK
1
2
3
4
5
6
NOP
NOP
ANYCOMx
ANYCOMy
BAx
BAy
CK#
CK
QKx#
QKx
Command
tRC
AREFx
AREFy
NOP
tRC
Bank Address
BAx
BAy
Don’t Care
AREF example in tRC(tCK)=5 option: Configuration=5
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 06/20/2012
22
IS49NLC93200,IS49NLC18160,IS49NLC36800
CK#
CK
CS#
WE#
REF#
ADDRESS
BANK
ADDRESS
BA*
Don’t care
Auto Refresh Command
3.10 Command Truth Table
Operation
Device DESELECT/No Operation
Mode Register Set
Read
Write
Auto Refresh
Code
DESL/NOP
MRS
READ
WRITE
AREF
CS#
H
L
L
L
L
WE#
X
L
H
L
H
REF#
X
L
H
H
L
Ax
X
OPCODE
A
A
X
BAx
X
X
BA
BA
BA
Notes:
1. X = "Don't Care;" H = logic HIGH; L = logic LOW; A = Valid Address; BA = Valid Bank Address.
2. During MRS, only address inputs A0-A17 are used.
3. Address width changes with burst length.
4. All input states or sequences not shown are illegal or reserved.
5. All command and address inputs must meet setup and hold times around the rising edge of CK.
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 06/20/2012
23
IS49NLC93200,IS49NLC18160,IS49NLC36800
3.11 On-Die Termination (ODT) Timing Examples.
CK#
7
0
1
2
3
4
5
6
RD
NOP
NOP
NOP
NOP
NOP
NOP
CK
Command
Address
NOP
BA2, A2
Read Latency = 4
tQKVLD
tQKVLD
QVLD
DQ ODT
DQ ODT on
DQ ODT Off
DQ ODT on
DQ
Q2-0
Q2-1
Q2-2
Q2-3
QKx#
QKx
Don’t Care
Undefined
Read Operation with ODT: RL=4 & BL=4
CK#
0
1
2
3
RD
WR
NOP
NOP
BA2, A2
BA1, A1
4
5
6
NOP
NOP
NOP
7
CK
Command
Address
NOP
Read Latency = 4
DKx#
DKx
Write Latency = 5
tQKVLD
tQKVLD
QVLD
DQ ODT
DQ ODT on
DQ
DQ ODT Off
Q2-0
Q2-1
DQ ODT on
D1-0
D1-1
QKx#
QKx
Don’t Care
Undefined
Read to Write with ODT: RL=4 & BL=2
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 06/20/2012
24
IS49NLC93200,IS49NLC18160,IS49NLC36800
4 IEEE 1149.1 TAP and Boundary Scan
RLDRAM 2 Memory devices have a serial boundary-scan test access port (TAP) that allow the use of a limited set of JTAG
instructions to test the interconnection between the memory I/Os and printed circuit board traces or other components. In
conformance with IEEE Standard 1149.1, the memory contains a TAP controller, instruction register, boundary scan register, bypass
register, and ID register. The TAP operates in accordance with IEEE Standard 1149.1-2001 (JTAG) with the exception of the ZQ pin. To
guarantee proper boundary-scan testing of the ZQ pin, MRS bit M8 needs to be set to 0 until the JTAG testing of the pin is complete.
Note that on power up, the default state of MRS bit M8 is logic LOW.
If the memory boundary scan register is to be used upon power up and prior to the initialization of the device, the CK and CK# pins
meet VID(DC) or CS# be held HIGH from power up until testing. Not doing so could result in inadvertent MRS commands to be
loaded, and subsequently cause unexpected results from address pins that are dependent upon the state of the mode register. If
these measures cannot be taken, the part must be initialized prior to boundary scan testing. If a full initialization is not practical or
feasible prior to boundary scan testing, a single MRS command with desired settings may be issued instead. After the single MRS
command is issued, the tMRSC parameter must be satisfied prior to boundary scan testing.
4.1 Disabling the JTAG feature
The RLDRAM 2 Memory can operate without using the JTAG feature. To disable the TAP controller, TCK must be tied LOW (VSS) to
prevent clocking of the device. TDI and TMS are internally pulled up and may be left disconnected. They may alternately be
connected to VDD through a pull-up resistor. TDO should be left disconnected. On power-up, the device will come up in a reset state,
which will not interfere with device operation.
4.2 Test Access Port Signal List:
Test Clock (TCK)
This signal uses VDD as a power supply. The test clock is used only with the TAP controller. All inputs are captured on the rising edge
of TCK. All outputs are driven from the falling edge of TCK.
Test Mode Select (TMS)
This signal uses VDD as a power supply. The TMS input is used to send commands to the TAP controller and is sampled on the rising
edge of TCK.
Test Data-In (TDI)
This signal uses VDD as a power supply. The TDI input is used to serially input test instructions and information into the registers and
can be connected to the input of any of the registers. The register between TDI and TDO is chosen by the instruction that is loaded
into the TAP instruction register. TDI is connected to the most significant bit (MSB) of any register. For more information regarding
instruction register loading, please see the TAP Controller State Diagram.
Test Data-Out (TDO)
This signal uses VDDQ as a power supply. The TDO output ball is used to serially clock test instructions and data out from the registers.
The TDO output driver is only active during the Shift-IR and Shift-DR TAP controller states. In all other states, the TDO pin is in a HighZ state. The output changes on the falling edge of TCK. TDO is connected to the least significant bit (LSB) of any register. For more
information, please see the TAP Controller State Diagram.
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 06/20/2012
25
IS49NLC93200,IS49NLC18160,IS49NLC36800
4.3 TAP Controller State and Block Diagram
1
Test Logic Reset
0
1
1
1
Run Test Idle
Select IR
Select DR
0
0
0
1
1
Capture DR
Capture IR
0
0
0
Shift DR
0
Shift IR
1
1
1
1
Exit1 IR
Exit1 DR
0
0
0
Pause DR
0
Pause IR
1
1
Exit2 IR
Exit2 DR
0
0
1
1
1
Update DR
0
Update IR
1
0
Note1
TDI
Bypass Register (1 bit)
Identification Register (32 bits)
TDO
Instruction Register (8 bits)
Control Signals
TMS
TAP Controller
TCK
Note: 113 boundary scan registers in RLDRAM 2 Memory
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 06/20/2012
26
IS49NLC93200,IS49NLC18160,IS49NLC36800
4.4 Performing a TAP Reset
A Reset is performed by forcing TMS HIGH (VDD) for five rising edges of TCK. RESET may be performed while the SRAM is operating
and does not affect its operation. At power-up, the TAP is internally reset to ensure that TDO comes up in a high-Z state.
4.5 TAP Registers
Registers are connected between the TDI and TDO pins and allow data to be scanned into and out of the SRAM test circuitry. Only
one register can be selected at a time through the instruction registers. Data is serially loaded into the TDI pin on the rising edge of
TCK and output on the TDO pin on the falling edge of TCK.
Instruction Register
This register is loaded during the update-IR state of the TAP controller. At power-up, the instruction register is loaded with the
IDCODE instruction. It is also loaded with the IDCODE instruction if the controller is placed in a reset state as described in the
previous section. When the TAP controller is in the capture-IR state, the two LSBs are loaded with a binary “01” pattern to allow for
fault isolation of the board-level serial test data path.
Bypass Register
The bypass register is a single-bit register that can be placed between the TDI and TDO balls. This allows data to be shifted through
the memory device with minimal delay. The bypass register is set LOW (VSS) when the BYPASS instruction is executed.
Boundary Scan Register
The boundary scan register is connected to all the input and bidirectional balls on the device. Several balls are also included in the
scan register to reserved balls. The boundary scan register is loaded with the contents of the memory Input and Output ring when
the TAP controller is in the capture-DR state and is then placed between the TDI and TDO balls when the controller is moved to the
shift-DR state. Each bit corresponds to one of the balls on the device package. The MSB of the register is connected to TDI, and the
LSB is connected to TDO.
Identification (ID) Register
The ID register is loaded with a vendor-specific, 32-bit code during the capture-DR state when the IDCODE command is loaded in the
instruction register. The IDCODE is hardwired into the device and can be shifted out when the TAP controller is in the shift-DR state.
4.6 Scan Register Sizes
Register Name
Bit Size
Instruction Register
Bypass Register
Boundary Scan Register
Identification (ID) Register
8
1
113
32
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 06/20/2012
27
IS49NLC93200,IS49NLC18160,IS49NLC36800
4.7 TAP Instruction Set
Many instructions are possible with an eight-bit instruction register and all valid combinations are listed in the TAP Instruction Code
Table. All other instruction codes that are not listed on this table are reserved and should not be used. Instructions are loaded into
the TAP controller during the Shift-IR state when the instruction register is placed between TDI and TDO. During this state,
instructions are shifted from the instruction register through the TDI and TDO pins. To execute an instruction once it is shifted in, the
TAP controller must be moved into the Update-IR state.
EXTEST
The EXTEST instruction allows circuitry external to the component package to be tested. Boundary-scan register cells at output balls
are used to apply a test vector, while those at input balls capture test results. Typically, the first test vector to be applied using the
EXTEST instruction will be shifted into the boundary scan register using the PRELOAD instruction. Thus, during the update-IR state of
EXTEST, the output driver is turned on, and the PRELOAD data is driven onto the output balls.
IDCODE
The IDCODE instruction causes a vendor-specific, 32-bit code to be loaded into the identification register. It also places the
identification register between the TDI and TDO balls and allows the IDCODE to be shifted out of the device when the TAP controller
enters the shift-DR state. The IDCODE instruction is loaded into the instruction register upon power-up or whenever the TAP
controller is given a test logic reset state.
High-Z
The High-Z instruction causes the bypass register to be connected between the TDI and TDO. This places all RLDRAM 2 Memory
outputs into a High-Z state.
CLAMP
When the CLAMP instruction is loaded into the instruction register, the data driven by the output balls are determined from the
values held in the boundary scan register.
SAMPLE/PRELOAD
When the SAMPLE/PRELOAD instruction is loaded into the instruction register and the TAP controller is in the capture-DR state, a
snapshot of data on the inputs and bidirectional balls is captured in the boundary scan register. The user must be aware that the TAP
controller clock can only operate at a frequency up to 50 MHz, while the memory clock operates significantly faster. Because there is
a large difference between the clock frequencies, it is possible that during the capture-DR state, an input or output will undergo a
transition. The TAP may then try to capture a signal while in transition (metastable state). This will not harm the device, but there is
no guarantee as to the value that will be captured. Repeatable results may not be possible. To ensure that the boundary scan
register will capture the correct value of a signal, the memory signal must be stabilized long enough to meet the TAP controller’s
capture setup plus hold time (tCS plus tCH). The memory clock input might not be captured correctly if there is no way in a design to
stop (or slow) the clock during a SAMPLE/ PRELOAD instruction. If this is an issue, it is still possible to capture all other signals and
simply ignore the value of the CK and CK# captured in the boundary scan register. Once the data is captured, it is possible to shift out
the data by putting the TAP into the shift-DR state. This places the boundary scan register between the TDI and TDO balls.
BYPASS
When the BYPASS instruction is loaded in the instruction register and the TAP is placed in a shift-DR state, the bypass register is
placed between TDI and TDO. The advantage of the BYPASS instruction is that it shortens the boundary scan path when multiple
devices are connected together on a board.
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 06/20/2012
28
IS49NLC93200,IS49NLC18160,IS49NLC36800
4.8 TAP DC Electrical Characteristics and Operating Conditions
(+0°C ≤ TC ≤ +95°C; +1.7V ≤ VDD ≤ +1.9V, unless otherwise noted)
Description
Input high (logic 1) voltage
Input low (logic 0) voltage
Input leakage current
Output leakage current
Output low voltage
Output low voltage
Output high voltage
Conditions
Symbol
VIH
Min
VREF + 0.15
Max
VDDQ + 0.3
Units
V
Notes
1, 2
VSSQ − 0.3
− 5.0
− 5.0
VDDQ - 0.2
VREF − 0.15
5.0
5.0
0.2
0.4
-
V
µA
µA
V
V
V
1, 2
0V ≤ VIN ≤ VDD
Output Disabled, 0V ≤ VIN ≤ VDDQ
IOLC =100 µA
IOLT = 2mA
|IOHC| =100 µA
VIL
ILI
ILO
VOL1
VOL2
VOH1
|IOHT | = 2mA
VOH2
VDDQ - 0.4
-
V
1
Output high voltage
1
1
1
Notes:
1. All voltages referenced to VSS (GND).
2. Overshoot = VIH(AC) ≤ VDD + 0.7V for t ≤ tCK/2; undershoot = VIL(AC) ≥ –0.5V for t ≤ tCK/2; during normal operation, VDDQ must not exceed VDD.
4.9 TAP AC Electrical Characteristics and Operating Conditions
(+0°C ≤ TC ≤ +95°C; +1.7V ≤ VDD ≤ +1.9V)
Description
Symbol
Min
Max
Units
tTHTH
fTF
tTHTL
tTLTH
20
50
ns
MHz
10
10
ns
ns
tTLOX
tTLOV
tDVTH
tTHDX
0
ns
Clock
Clock Cycle Time
Clock Frequency
Clock HIGH Time
Clock LOW Time
TDI/TDO times
TCK LOW to TDO unknown
TCK LOW to TDO valid
TDI valid to TCK High
TCK HIGH to TDI invalid
Setup times
TMS Setup
Capture Setup
Hold Times
TMS hold
Capture hold
5
10
ns
ns
5
ns
tMVTH
tCS
5
5
ns
ns
tTMHX
tCH
5
ns
5
ns
Note: tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register.
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 06/20/2012
29
IS49NLC93200,IS49NLC18160,IS49NLC36800
4.10 TAP Timing
0
1
tTHTL
2
3
4
5
6
7
tTHTH
tTLTH
Test Mode
Clock (CK)
tMVTH
tTHMX
Test Mode
Select (TMS)
tDVTH
tTHDX
Test Data-In
(TDI)
tTLOV
tTLOX
Test Data-Out
(TDO)
Don’t Care
Undefined
4.11 TAP Instruction Codes
Instruction
Code
EXTEST
0000 0000
IDCODE
0010 0001
SAMPLE/PRELOAD
0000 0101
CLAMP
0000 0111
High-Z
0000 0011
BYPASS
1111 1111
Description
Captures Input and Output ring contents. Places the boundary scan register between TDI and
TDO. This operation does not affect device operations
Loads the ID register with the vendor ID code and places the register between TDI and TDO;
This operation does not affect device operations
Captures I/O ring contents; Places the boundary scan register between TDI and TDO
Selects the bypass register to be connected between TDI and TDO; Data driven by output balls
are determined from values held in the boundary scan register
Selects the bypass register to be connected between TDI and TDO; All outputs are forced into
High-Z
Places the bypass register between TDI and TDO; This operation does not affect device
operations
Note: All other remaining instruction codes not mentioned in the above table are reserved and should not be used.
4.12 Identification (ID) Register Definition
Instruction Field
All Devices
Revision number (31:28)
abcd
Device ID (27:12)
00jkidef10100111
Vendor ID code (11:1)
ID register presence indicator (0)
000 1101 0101
1
Description
ab = die revision
cd = 00 for x9, 01 for x18, 10 for x36
def = 000 for 288Mb, 001 for 576Mb
i = 0 for common I/O, 1 for separate I/O
jk = 01 for RLDRAM 2 Memory
Allows unique identification of vendor
Indicates the presence of an ID register
4.13 TAP Input AC Logic Levels
(+0°C ≤ TC ≤ +95°C; +1.7V ≤ VDD ≤ +1.9V, unless otherwise noted)
Description
Input high (logic 1) voltage
Input low (logic 0) voltage
Symbol
VIH
VIL
Min
VREF + 0.3
-
Max
VREF - 0.3
Units
V
V
Note: All voltages referenced to VSS (GND).
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 06/20/2012
30
IS49NLC93200,IS49NLC18160,IS49NLC36800
4.14 Boundary Scan Order
Bit#
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
Signal name
Bump
x9
x18
x36
ID
DK
DK
DK1
K1
DK#
DK#
DK1#
K2
CS#
CS#
CS#
L2
REF# REF# REF#
L1
WE#
WE#
WE#
M1
A17
A17
A17
M3
A16
A16
A16
M2
A18
A18
A18
N1
A15
A15
A15
P1
DNU DQ14 DQ25
N3
DNU DQ14 DQ25
N3
DNU
DNU DQ24
N2
DNU
DNU DQ24
N2
DNU DQ15 DQ23
P3
DNU DQ15 DQ23
P3
DNU
DNU DQ22
P2
DNU
DNU DQ22
P2
DNU
QK1
QK1
R2
DNU QK1# QK1#
R3
DNU
DNU DQ20
T2
DNU
DNU DQ20
T2
DNU DQ16 DQ21
T3
DNU DQ16 DQ21
T3
DNU
DNU DQ18
U2
DNU
DNU DQ18
U2
DNU DQ17 DQ19
U3
DNU DQ17 DQ19
U3
ZQ
ZQ
ZQ
V2
DQ8 DQ13 DQ27 U10
DQ8 DQ13 DQ27 U10
DNU
DNU DQ26 U11
DNU
DNU DQ26 U11
DQ7 DQ12 DQ29
T10
DQ7 DQ12 DQ29
T10
DNU
DNU DQ28
T11
DNU
DNU DQ28
T11
DQ6 DQ11 DQ31
R10
DQ6 DQ11 DQ31
R10
Bit#
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 06/20/2012
Signal name
Bump
x9
x18
x36
ID
DNU
DNU DQ30
R11
DNU
DNU DQ30
R11
DNU
DNU DQ32
P11
DNU
DNU DQ32
P11
DQ5 DQ10 DQ33
P10
DQ5 DQ10 DQ33
P10
DNU
DNU DQ34 N11
DNU
DNU DQ34 N11
DQ4
DQ9 DQ35 N10
DQ4
DQ9 DQ35 N10
DM
DM
DM
P12
A19
A19
(A19)
N12
A11
A11
A11
M11
A12
A12
A12
M10
A10
A10
A10
M12
A13
A13
A13
L12
A14
A14
A14
L11
BA1
BA1
BA1
K11
CK#
CK#
CK#
K12
CK
CK
CK
J12
BA0
BA0
BA0
J11
A4
A4
A4
H11
A3
A3
A3
H12
A0
A0
A0
G12
A2
A2
A2
G10
A1
A1
G11
A1
A20
(A20) (A20)
E12
QVLD QVLD QVLD
F12
DQ3
DQ3
DQ7
F10
DQ3
DQ3
DQ7
F10
DNU
DNU
DQ6
F11
DNU
DNU
DQ6
F11
DQ2
DQ2
DQ5
E10
DQ2
DQ2
DQ5
E10
DNU
DNU
DQ4
E11
DNU
DNU
DQ4
E11
QK0
QK0
QK0
D11
QK0# QK0# QK0#
D10
Bit#
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
Signal name
Bump
x9
x18
x36
ID
DNU
DNU
DQ2
C11
DNU
DNU
DQ2
C11
DQ1
DQ1
DQ3
C10
DQ1
DQ1
DQ3
C10
DNU
DNU
DQ0
B11
DNU
DNU
DQ0
B11
DQ0
DQ0
DQ1
B10
DQ0
DQ0
DQ1
B10
DNU
DQ4
DQ9
B3
DNU
DQ4
DQ9
B3
DNU
DNU
DQ8
B2
DNU
DNU
DQ8
B2
DNU
DQ5 DQ11
C3
DNU
DQ5 DQ11
C3
DNU
DNU DQ10
C2
DNU
DNU DQ10
C2
DNU
DQ6 DQ13
D3
DNU
DQ6 DQ13
D3
DNU
DNU DQ12
D2
DNU
DNU DQ12
D2
DNU
DNU DQ14
E2
DNU
DNU DQ14
E2
DNU
DQ7 DQ15
E3
DNU
DQ7 DQ15
E3
DNU
DNU DQ16
F2
DNU
DNU DQ16
F2
DNU
DQ8 DQ17
F3
DNU
DQ8 DQ17
F3
(A21) (A21) (A21)
E1
A5
A5
A5
F1
A6
A6
A6
G2
A7
A7
A7
G3
A8
A8
A8
G1
BA2
BA2
BA2
H1
A9
A9
A9
H2
NF
NF
DK0#
J2
NF
NF
DK0
J1
31
IS49NLC93200,IS49NLC18160,IS49NLC36800
ORDERING INFORMATION
Commercial Range: TC = 0° to +95°C; TA = 0°C to +70°C
Frequency
Speed
Order Part No.
Organization
Package
533 MHz
1.875ns (tRC=15ns)
IS49NLC93200-18B
32M x 9
144 FBGA
IS49NLC93200-18BL
32M x 9
144 FBGA, Lead-free
IS49NLC18160-18B
16M x 18
144 FBGA
400 MHz
400 MHz
300 MHz
200 MHz
2.5ns (tRC=15ns)
2.5ns (tRC=20ns)
3.3ns (tRC=20ns)
5ns (tRC=20ns)
IS49NLC18160-18BL
16M x 18
144 FBGA, Lead-free
IS49NLC36800-18B
8M x 36
144 FBGA
IS49NLC36800-18BL
8M x 36
144 FBGA, Lead-free
IS49NLC93200-25EB
32M x 9
144 FBGA
IS49NLC93200-25EBL
32M x 9
144 FBGA, Lead-free
IS49NLC18160-25EB
16M x 18
144 FBGA
IS49NLC18160-25EBL
16M x 18
144 FBGA, Lead-free
IS49NLC36800-25EB
8M x 36
144 FBGA
IS49NLC36800-25EBL
8M x 36
144 FBGA, Lead-free
IS49NLC93200-25B
32M x 9
144 FBGA
IS49NLC93200-25BL
32M x 9
144 FBGA, Lead-free
IS49NLC18160-25B
16M x 18
144 FBGA
IS49NLC18160-25BL
16M x 18
144 FBGA, Lead-free
IS49NLC36800-25B
8M x 36
144 FBGA
IS49NLC36800-25BL
8M x 36
144 FBGA, Lead-free
IS49NLC93200-33B
32M x 9
144 FBGA
IS49NLC93200-33BL
32M x 9
144 FBGA, Lead-free
IS49NLC18160-33B
16M x 18
144 FBGA
IS49NLC18160-33BL
16M x 18
144 FBGA, Lead-free
IS49NLC36800-33B
8M x 36
144 FBGA
IS49NLC36800-33BL
8M x 36
144 FBGA, Lead-free
IS49NLC93200-5B
32M x 9
144 FBGA
IS49NLC93200-5BL
32M x 9
144 FBGA, Lead-free
IS49NLC18160-5B
16M x 18
144 FBGA
IS49NLC18160-5BL
16M x 18
144 FBGA, Lead-free
IS49NLC36800-5B
8M x 36
144 FBGA
IS49NLC36800-5BL
8M x 36
144 FBGA, Lead-free
Note:
Please contact ISSI for availability of -5 speed grade option. The -33 speed grade option is backward compatible with all timing specification for
slower grades.
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 06/20/2012
32
IS49NLC93200,IS49NLC18160,IS49NLC36800
ORDERING INFORMATION
Industrial Range: TC = − 40°C to 95°C; TA = − 40°C to +85°C
Frequency
Speed
Order Part No.
Organization
Package
533 MHz
1.875ns (tRC=15ns)
IS49NLC93200-18BI
32M x 9
144 FBGA
IS49NLC93200-18BLI
32M x 9
144 FBGA, Lead-free
IS49NLC18160-18BI
16M x 18
144 FBGA
IS49NLC18160-18BLI
16M x 18
144 FBGA, Lead-free
IS49NLC36800-18BI
8M x 36
144 FBGA
IS49NLC36800-18BLI
8M x 36
144 FBGA, Lead-free
IS49NLC93200-25EBI
32M x 9
144 FBGA
400 MHz
400 MHz
300 MHz
200 MHz
2.5ns (tRC=15ns)
2.5ns (tRC=20ns)
3.3ns (tRC=20ns)
5ns (tRC=20ns)
IS49NLC93200-25EBLI
32M x 9
144 FBGA, Lead-free
IS49NLC18160-25EBI
16M x 18
144 FBGA
IS49NLC18160-25EBLI
16M x 18
144 FBGA, Lead-free
IS49NLC36800-25EBI
8M x 36
144 FBGA
IS49NLC36800-25EBLI
8M x 36
144 FBGA, Lead-free
IS49NLC93200-25BI
32M x 9
144 FBGA
IS49NLC93200-25BLI
32M x 9
144 FBGA, Lead-free
IS49NLC18160-25BI
16M x 18
144 FBGA
IS49NLC18160-25BLI
16M x 18
144 FBGA, Lead-free
IS49NLC36800-25BI
8M x 36
144 FBGA
IS49NLC36800-25BLI
8M x 36
144 FBGA, Lead-free
IS49NLC93200-33BI
32M x 9
144 FBGA
IS49NLC93200-33BLI
32M x 9
144 FBGA, Lead-free
IS49NLC18160-33BI
16M x 18
144 FBGA
IS49NLC18160-33BLI
16M x 18
144 FBGA, Lead-free
IS49NLC36800-33BI
8M x 36
144 FBGA
IS49NLC36800-33BLI
8M x 36
144 FBGA, Lead-free
IS49NLC93200-5BI
32M x 9
144 FBGA
IS49NLC93200-5BLI
32M x 9
144 FBGA, Lead-free
IS49NLC18160-5BI
16M x 18
144 FBGA
IS49NLC18160-5BLI
16M x 18
144 FBGA, Lead-free
IS49NLC36800-5BI
8M x 36
144 FBGA
IS49NLC36800-5BLI
8M x 36
144 FBGA, Lead-free
Note:
Please contact ISSI for availability of -5 speed grade option. The -33 speed grade option is backward compatible with all timing specification for
slower grades.
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 06/20/2012
33
IS49NLC93200,IS49NLC18160,IS49NLC36800
Ball Grid Array
Package Code: B (144-ball)
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00F, 06/20/2012
34