IXYS IXFN62N80Q3

Preliminary Technical Information
IXFN62N80Q3
HiperFETTM
Power MOSFET
Q3-Class
VDSS
ID25
RDS(on)
trr
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
Avalanche Rated
=
=
≤
≤
800V
49A
Ω
140mΩ
300ns
miniBLOC
E153432
S
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
800
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
800
V
VGSS
Continuous
±30
V
VGSM
Transient
±40
V
ID25
TC = 25°C
IDM
TC = 25°C, Pulse Width Limited by TJM
IA
EAS
49
A
180
A
TC = 25°C
TC = 25°C
62
5
A
J
dv/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
50
V/ns
PD
TC = 25°C
960
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
TJ
TJM
Tstg
VISOL
50/60 Hz, RMS, t = 1minute
IISOL ≤ 1mA,
t = 1s
Md
Mounting Torque for Base Plate
Terminal Connection Torque
Weight
2500
3000
V~
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30
g
G
S
D
G = Gate
S = Source
D = Drain
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
Features
z
z
z
z
z
z
z
International Standard Package
Low Intrinsic Gate Resistance
miniBLOC with Aluminum Nitride
Isolation
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Low RDS(on) and QG
Advantages
z
z
z
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 3mA
800
VGS(th)
VDS = VGS, ID = 8mA
3.5
IGSS
VGS = ±30V, VDS = 0V
IDSS
VDS = 0.8 • VDSS, VGS = 0V
RDS(on)
V
6.5
V
±200 nA
TJ = 125°C
VGS = 10V, ID = 31A, Note 1
© 2012 IXYS CORPORATION, All Rights Reserved
50 μA
4 mA
140 mΩ
High Power Density
Easy to Mount
Space Savings
Applications
z
z
z
z
z
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
Temperature and Lighting Controls
DS100342A(04/12)
IXFN62N80Q3
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
28
VDS = 20V, ID = 31A, Note 1
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
RGi
Gate Input Resistance
td(on)
Resistive Switching Times
tr
td(off)
tf
Qgs
48
S
13.6
nF
1260
pF
100
pF
0.13
Ω
54
ns
20
ns
62
ns
11
ns
270
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 31A
RG = 1Ω (External)
Qg(on)
VGS = 10V, VDS = 0.5 • VDSS, ID = 31A
Qgd
SOT-227B (IXFN) Outline
90
nC
120
nC
(M4 screws (4x) supplied)
0.13 °C/W
RthJC
RthCS
0.05
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
IS
VGS = 0V
ISM
VSD
trr
QRM
IRM
Note
Characteristic Values
Min.
Typ.
Max.
62
A
Repetitive, Pulse Width Limited by TJM
250
A
IF = IS, VGS = 0V, Note 1
1.5
V
IF = 31A, -di/dt = 100A/μs
1.6
13.4
VR = 100V, VGS = 0V
300 ns
μC
A
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFN62N80Q3
Fig. 2. Extended Output Characteristics @ T J = 25ºC
Fig. 1. Output Characteristics @ T J = 25ºC
VGS = 10V
60
8V
40
ID - Amperes
ID - Amperes
50
30
20
120
VGS = 10V
100
9V
80
60
8V
40
7V
10
20
7V
6V
0
6V
0
0
1
2
3
4
5
6
7
8
0
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 31A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ T J = 125ºC
3.0
VGS = 10V
8V
60
VGS = 10V
2.6
R DS(on) - Normalized
ID - Amperes
50
40
7V
30
20
2.2
I D = 62A
1.8
I D = 31A
1.4
1.0
6V
10
0.6
5V
0
0.2
0
2
4
6
8
10
12
14
16
18
20
-50
-25
0
25
50
75
100
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 31A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
125
150
125
150
2.8
VGS = 10V
2.6
50
TJ = 125ºC
40
2.2
ID - Amperes
R DS(on) - Normalized
2.4
2.0
1.8
1.6
30
20
TJ = 25ºC
1.4
1.2
10
1.0
0
0.8
0
20
40
60
80
ID - Amperes
© 2012 IXYS CORPORATION, All Rights Reserved
100
120
140
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
IXFN62N80Q3
Fig. 7. Input Admittance
Fig. 8. Transconductance
100
100
90
90
80
80
70
70
g f s - Siemens
ID - Amperes
TJ = - 40ºC
60
TJ = 125ºC
50
25ºC
40
- 40ºC
25ºC
60
40
30
30
20
20
10
10
0
125ºC
50
0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
0
10
20
30
40
VGS - Volts
50
60
70
80
90
100
ID - Amperes
Fig. 10. Gate Charge
Fig. 9. Forward Voltage Drop of Intrinsic Diode
200
16
180
14
VDS = 400V
I D = 31A
160
I G = 10mA
12
VGS - Volts
IS - Amperes
140
120
100
80
60
TJ = 125ºC
10
8
6
4
40
TJ = 25ºC
2
20
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
50
100
VSD - Volts
150
200
250
300
350
400
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
1000
100,000
RDS(on) Limit
10,000
Ciss
250µs
100
ID - Amperes
Capacitance - PicoFarads
f = 1 MHz
1,000
Coss
10
100
TJ = 150ºC
Crss
TC = 25ºC
Single Pulse
1ms
10
1
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10
100
VDS - Volts
1,000
IXFN62N80Q3
Fig. 13. Maximum Transient Thermal Impedance
1
Z(th)JC - ºC / W
0.1
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2012 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_62N80Q3(Q9) 5-20-11