Preliminary Technical Information IXFN62N80Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated = = ≤ ≤ 800V 49A Ω 140mΩ 300ns miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 800 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C IDM TC = 25°C, Pulse Width Limited by TJM IA EAS 49 A 180 A TC = 25°C TC = 25°C 62 5 A J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 50 V/ns PD TC = 25°C 960 W -55 ... +150 150 -55 ... +150 °C °C °C TJ TJM Tstg VISOL 50/60 Hz, RMS, t = 1minute IISOL ≤ 1mA, t = 1s Md Mounting Torque for Base Plate Terminal Connection Torque Weight 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. Features z z z z z z z International Standard Package Low Intrinsic Gate Resistance miniBLOC with Aluminum Nitride Isolation Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages z z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 800 VGS(th) VDS = VGS, ID = 8mA 3.5 IGSS VGS = ±30V, VDS = 0V IDSS VDS = 0.8 • VDSS, VGS = 0V RDS(on) V 6.5 V ±200 nA TJ = 125°C VGS = 10V, ID = 31A, Note 1 © 2012 IXYS CORPORATION, All Rights Reserved 50 μA 4 mA 140 mΩ High Power Density Easy to Mount Space Savings Applications z z z z z DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls DS100342A(04/12) IXFN62N80Q3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 28 VDS = 20V, ID = 31A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf Qgs 48 S 13.6 nF 1260 pF 100 pF 0.13 Ω 54 ns 20 ns 62 ns 11 ns 270 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 31A RG = 1Ω (External) Qg(on) VGS = 10V, VDS = 0.5 • VDSS, ID = 31A Qgd SOT-227B (IXFN) Outline 90 nC 120 nC (M4 screws (4x) supplied) 0.13 °C/W RthJC RthCS 0.05 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. 62 A Repetitive, Pulse Width Limited by TJM 250 A IF = IS, VGS = 0V, Note 1 1.5 V IF = 31A, -di/dt = 100A/μs 1.6 13.4 VR = 100V, VGS = 0V 300 ns μC A 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN62N80Q3 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC VGS = 10V 60 8V 40 ID - Amperes ID - Amperes 50 30 20 120 VGS = 10V 100 9V 80 60 8V 40 7V 10 20 7V 6V 0 6V 0 0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 31A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 3.0 VGS = 10V 8V 60 VGS = 10V 2.6 R DS(on) - Normalized ID - Amperes 50 40 7V 30 20 2.2 I D = 62A 1.8 I D = 31A 1.4 1.0 6V 10 0.6 5V 0 0.2 0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 31A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 2.8 VGS = 10V 2.6 50 TJ = 125ºC 40 2.2 ID - Amperes R DS(on) - Normalized 2.4 2.0 1.8 1.6 30 20 TJ = 25ºC 1.4 1.2 10 1.0 0 0.8 0 20 40 60 80 ID - Amperes © 2012 IXYS CORPORATION, All Rights Reserved 100 120 140 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFN62N80Q3 Fig. 7. Input Admittance Fig. 8. Transconductance 100 100 90 90 80 80 70 70 g f s - Siemens ID - Amperes TJ = - 40ºC 60 TJ = 125ºC 50 25ºC 40 - 40ºC 25ºC 60 40 30 30 20 20 10 10 0 125ºC 50 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 0 10 20 30 40 VGS - Volts 50 60 70 80 90 100 ID - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 200 16 180 14 VDS = 400V I D = 31A 160 I G = 10mA 12 VGS - Volts IS - Amperes 140 120 100 80 60 TJ = 125ºC 10 8 6 4 40 TJ = 25ºC 2 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 50 100 VSD - Volts 150 200 250 300 350 400 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1000 100,000 RDS(on) Limit 10,000 Ciss 250µs 100 ID - Amperes Capacitance - PicoFarads f = 1 MHz 1,000 Coss 10 100 TJ = 150ºC Crss TC = 25ºC Single Pulse 1ms 10 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFN62N80Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Z(th)JC - ºC / W 0.1 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2012 IXYS CORPORATION, All Rights Reserved IXYS REF: F_62N80Q3(Q9) 5-20-11