PolarTM Power MOSFET HiPerFETTM IXFN38N100P VDSS ID25 = = ≤ ≤ RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1000V 38A Ω 210mΩ 300ns miniBLOC, SOT-227 B E153432 S Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 38 A IDM TC = 25°C, Pulse Width Limited by TJM 120 A G IA TC = 25°C 19 A EAS TC = 25°C 2 J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns PD TC = 25°C 1000 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 VISOL 50/60Hz IISOL ≤ 1mA Md Mounting Torque Terminal Connection Torque (M4) t = 1min t = 1s Weight S D G = Gate S = Source Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. Features z z z z z z z z Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1000 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2009 IXYS CORPORATION, All Rights Reserved V 6.5 V ± 300 nA 50 μA 4 mA 210 mΩ International Standard Package Encapsulating Epoxy meets UL 94 V-0, Flammability Classification miniBLOC with Aluminium Nitride Isolation Fast Recovery Diode Avalanche Rated Low package inductance Advantages z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) D = Drain Easy to Mount Space Savings High Power Density Applications z z z z z Switched-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS99866B(7/09) IXFN38N100P Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 18 VDS = 20V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 24 nF pF pF 0.78 Ω 74 ns 55 ns 71 ns 40 ns 350 nC 150 nC 150 nC RG= 1Ω (External) Qgd S 80 VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qg(on) 29 1245 Crss RGi SOT-227B Outline 0.125 °C/W RthJC RthCS °C/W 0.05 Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Characteristic Values Min. Typ. Max. 38 A Repetitive, Pulse Width Limited by TJM 150 A IF = IS, VGS = 0V, Note 1 1.5 V 300 ns IF = 25A, -di/dt = 100A/μs VR = 100V 2.5 μC 17 A Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN38N100P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 100 40 VGS = 15V 11V 10V 35 VGS = 15V 11V 90 80 30 ID - Amperes ID - Amperes 70 25 9V 20 15 10V 60 50 40 9V 30 10 8V 20 5 8V 10 7V 0 0 0 1 2 3 4 5 6 7 8 0 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 19A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 40 3.0 VGS = 15V 10V 35 VGS = 10V 2.6 R DS(on) - Normalized 30 9V ID - Amperes 20 VDS - Volts VDS - Volts 25 20 8V 15 10 7V 5 2.2 I D = 38A 1.8 I D = 19A 1.4 1.0 0.6 6V 0 0.2 0 2 4 6 8 10 12 14 16 18 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 19A Value vs. Drain Current 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 40 2.6 VGS = 10V 2.4 35 15V - - - - 2.2 30 TJ = 125ºC 2.0 ID - Amperes R DS(on) - Normalized 25 TJ - Degrees Centigrade 1.8 1.6 25 20 15 1.4 10 1.2 TJ = 25ºC 5 1.0 0 0.8 0 10 20 30 40 50 60 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 70 80 90 -50 -25 0 25 50 75 100 TC - Degrees Centigrade IXYS REF: F_38N100P(99)7-14-09-D IXFN38N100P Fig. 8. Transconductance Fig. 7. Input Admittance 65 60 60 TJ = - 40ºC 55 50 45 g f s - Siemens ID - Amperes 50 TJ = 125ºC 25ºC - 40ºC 40 30 20 40 25ºC 35 30 125ºC 25 20 15 10 10 5 0 0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 0 10 20 30 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 50 60 70 80 90 450 500 Fig. 10. Gate Charge 16 110 100 VDS = 500V 14 I D = 19A 90 I G = 10mA 12 80 70 VGS - Volts IS - Amperes 40 ID - Amperes 60 50 TJ = 125ºC 40 30 10 8 6 4 TJ = 25ºC 20 2 10 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1.3 50 100 VSD - Volts 150 200 Fig. 11. Capacitance 300 350 400 Fig. 12. Forward-Bias Safe Operating Area 100,000 1,000.0 RDS(on) Limit Ciss 10,000 1,000 Coss 100 1ms 100µs 25µs 10ms 100.0 ID - Amperes Capacitance - PicoFarads 250 QG - NanoCoulombs 100ms DC 10.0 1.0 TJ = 150ºC Crss TC = 25ºC Single Pulse f = 1 MHz 10 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFN38N100P Fig. 13. Maximum Transient Thermal Impedance 1.000 Z (th)JC - ºC / W 0.100 0.010 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: F_38N100P(99)7-14-09-D