KERSEMI MBR2070CT

 . . . using the Schottky Barrier principle with a platinum barrier metal. These
state–of–the–art devices have the following features:
•
•
•
•
•
•
•
•
•
20 Amps Total (10 Amps Per Diode Leg)
Guard–Ring for Stress Protection
Low Forward Voltage
150°C Operating Junction Temperature
Guaranteed Reverse Avalanche
Epoxy Meets UL94, VO at 1/8″
Low Power Loss/High Efficiency
High Surge Capacity
Low Stored Charge Majority Carrier Conduction
MBR2060CT and MBR20100CT
are Motorola Preferred Devices
SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
60–100 VOLTS
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Shipped 50 units per plastic tube
• Marking: B2060, B2070, B2080, B2090, B20100
4
1
1
2
3
2, 4
3
CASE 221A–06
TO–220AB
PLASTIC
MAXIMUM RATINGS PER DIODE LEG
MBR
Rating
Symbol
Unit
2060CT
2070CT
2080CT
2090CT
20100CT
60
70
80
90
100
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
Volts
Average Rectified Forward Current
(Rated VR) TC = 133°C
IF(AV)
10
Amps
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 133°C
IFRM
20
Amps
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave,
single phase, 60 Hz)
IFSM
150
Amps
Peak Repetitive Reverse Surge Current (2.0 µs, 1.0 kHz)
IRRM
0.5
Amp
Storage Temperature
Tstg
*65 to +150
*65 to +175
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/µs
RθJC
RθJA
2.0
60
°C/W
Operating Junction Temperature
TJ
°C
°C
THERMAL CHARACTERISTICS
Maximum Thermal Resistance — Junction to Case
— Junction to Ambient
Device Data
Rectifier
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1
50
TJ = 150°C
20
IR , REVERSE CURRENT (mA)
150°C
10
100°C
175°C
5.0
3.0
TJ = 25°C
1.0
10
125°C
100°C
1.0
0.1
25°C
0.01
0.5
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
1.0
0.9
40
60
80
100
120
vF, INSTANTANEOUS VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage Per Diode
Figure 2. Typical Reverse Current Per Diode
20
RATED VOLTAGE APPLIED
RqJC = 2°C/W
18
16
14
12
10
dc
8.0
6.0
SQUARE WAVE
4.0
2.0
0
110
20
0
I F(AV) , AVERAGE FORWARD CURRENT (AMPS)
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
i F, INSTANTANEOUS FORWARD CURRENT (AMPS)
120
130
140
150
140
20
(HEATSINK)
RqJA = 16°C/W
(NO HEATSINK)
RqJA = 60°C/W
18
16
14
12
RATED VOLTAGE
APPLIED
10
dc
8.0
6.0
4.0
dc
SQUARE WAVE
2.0
0
160
0
60
40
20
80
100
120
140
160
TC, CASE TEMPERATURE (°C)
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Current Derating, Case
Figure 4. Current Derating, Ambient
180
200
20
AVERAGE POWER (WATTS)
IPK/IAV = 5.0
TA = 25°C
18
IPK/IAV = p
16
IPK/IAV = 10
14
12
dc
10
IPK/IAV = 20
8.0
SQUARE WAVE
6.0
4.0
2.0
0
0
2.0
4.0
6.0
8.0
10
12
14
16
18
20
AVERAGE CURRENT (AMPS)
Figure 5. Average Power Dissipation and
Average Current
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3
–T–
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
CASE 221A–06
(TO–220AB)
ISSUE Y
Rectifier
Device Data
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