Order this document by MBR1035/D SEMICONDUCTOR TECHNICAL DATA . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • • • • • MBR1045 is a Motorola Preferred Device Guardring for Stress Protection Low Forward Voltage 150°C Operating Junction Temperature Guaranteed Reverse Avalanche Epoxy Meets UL94, VO at 1/8″ SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 20 to 45 VOLTS Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.9 grams (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds • Shipped 50 units per plastic tube • Marking: B1035, B1045 4 3 1 1, 4 3 CASE 221B–03 TO–220AC PLASTIC MAXIMUM RATINGS Rating Symbol MBR1035 MBR1045 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 35 45 Volts Average Rectified Forward Current (Rated VR) TC = 135°C IF(AV) 10 10 Amps Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 135°C IFRM 20 20 Amps Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 150 Amps Peak Repetitive Reverse Surge Current (2.0 µs, 1.0 kHz) See Figure 12 IRRM 1.0 1.0 Amp TJ *65 to +150 *65 to +175 Storage Temperature Tstg *65 to +150 *65 to +175 Voltage Rate of Change (Rated VR) dv/dt 1000 10000 V/µs RθJC 2.0 2.0 °C/W 0.57 0.72 0.84 0.57 0.72 0.84 15 0.1 15 0.1 Operating Junction Temperature °C °C THERMAL CHARACTERISTICS Maximum Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (1) (iF = 10 Amps, TC = 125°C) (iF = 20 Amps, TC = 125°C) (iF = 20 Amps, TC = 25°C) vF Maximum Instantaneous Reverse Current (1) (Rated dc Voltage, TC = 125°C) (Rated dc Voltage, TC = 25°C) iR Volts mA (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%. SWITCHMODE is a trademark of Motorola, Inc. Preferred devices are Motorola recommended choices for future use and best overall value. Rev 2 Device Rectifier Motorola, Inc. 1996 Data 1 100 100 TJ = 150°C TJ = 150°C 70 50 25°C 30 30 20 20 10 7.0 5.0 3.0 2.0 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.5 0.3 0.3 0.2 0.2 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.2 0.4 0.6 0.8 1.0 1.4 1.2 vF, INSTANTANEOUS VOLTAGE (VOLTS) vF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 1. Maximum Forward Voltage Figure 2. Typical Forward Voltage 200 IFSM , PEAK HALF–WAVE CURRENT (AMPS) 100 TJ = 150°C IR , REVERSE CURRENT (mA) 10 0.7 0.1 125°C 10 100°C 1.0 75°C 0.1 25°C 0.01 0.001 0 2 100°C 50 25°C iF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (AMPS) 70 100°C 5.0 10 15 20 25 30 35 40 45 50 100 70 50 30 20 1.0 2.0 3.0 5.0 7.0 10 20 30 50 VR, REVERSE VOLTAGE (VOLTS) NUMBER OF CYCLES AT 60 Hz Figure 3. Maximum Reverse Current Figure 4. Maximum Surge Capability 70 100 Rectifier Device Data RATED VOLTAGE APPLIED I 15 I I PK 10 (CAPACITIVE LOAD) I AV PF(AV) , AVERAGE FORWARD POWER DISSIPATION (WATTS) PK AV + p (RESISTIVE LOAD) +5 SQUARE WAVE 10 5.0 20 dc 0 110 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) 20 130 120 140 150 16 RATED VOLTAGE APPLIED 14 I 12 I PK AV + p (RESISTIVE LOAD) 10 SQUARE WAVE 8.0 6.0 dc 4.0 I (CAPACITIVE LOAD) PK I 2.0 AV 0 160 0 20 60 40 + 20, 10, 5 100 80 120 140 TC, CASE TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 5. Current Derating, Infinite Heatsink Figure 6. Current Derating, RqJA = 16°C/W 10 9.0 SINE WAVE RESISTIVE LOAD 8.0 I 7.0 (CAPACITIVE LOAD) PK I 6.0 AV IF(AV) , AVERAGE FORWARD CURRENT (AMPS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) dc SQUARE WAVE +5 10 5.0 20 4.0 3.0 TJ = 150°C 2.0 1.0 0 0 2.0 4.0 6.0 8.0 10 12 14 160 5.0 RATED VOLTAGE APPLIED RqJA = 60°C/W 4.0 I I 3.0 PK AV + p (RESISTIVE LOAD) SQUARE WAVE 2.0 dc 1.0 I (CAPACITIVE LOAD) PK I AV 0 16 0 20 60 40 + 20, 10, 5 80 100 120 140 IF(AV), AVERAGE FORWARD CURRENT (AMPS) TA, AMBIENT TEMPERATURE (°C) Figure 7. Forward Power Dissipation Figure 8. Current Derating, Free Air 160 1.0 0.7 0.5 0.3 0.2 Ppk tp 0.1 0.07 0.05 Ppk DUTY CYCLE, D = tp/t1 PEAK POWER, Ppk, is peak of an equivalent square power pulse. TIME t1 ∆TJL = Ppk • RθJL [D + (1 – D) • r(t1 + tp) + r(tp) – r(t1)] where: ∆TJL = the increase in junction temperature above the lead temperature. r(t) = normalized value of transient thermal resistance at time, t, i.e.: r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + tp. 0.03 0.02 0.01 0.01 0.1 1.0 10 100 1000 t, TIME (ms) Figure 9. Thermal Response Rectifier Device Data 3 1500 HIGH FREQUENCY OPERATION Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 10.) Rectification efficiency measurements show that operation will be satisfactory up to several megahertz. For example, relative waveform rectification efficiency is approximately 70 percent at 2.0 MHz, e.g., the ratio of dc power to RMS power in the load is 0.28 at this frequency, whereas perfect rectification would yield 0.406 for sine wave inputs. However, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss; it is simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage. C, CAPACITANCE (pF) 1000 700 500 MAXIMUM 300 TYPICAL 200 150 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 VR, REVERSE VOLTAGE (VOLTS) Figure 10. Capacitance SCHOTTKY CHIP — View A–A SCHOTTKY CHIP (See View A–A) ANODE ALUMINUM CONTACT METAL 3 1 ALUMINUM WIRE OXIDE PASSIVATION PLATINUM BARRIER METAL GUARDRING CATHODE SOLDER DIPPED COPPER LEADS 4 COPPER UL RATED EPOXY Figure 11. Schottky Rectifier Motorola builds quality and reliability into its Schottky Rectifiers. First is the chip, which has an interface metal between the barrier metal and aluminum–contact metal to eliminate any possible interaction between the two. The indicated guardring prevents dv/dt problems, so snubbers are not mandatory. The guardring also operates like a zener to absorb over–voltage transients. Second is the package. The Schottky chip is bonded to the copper heat sink using a specially formulated solder. This gives the unit the capability of passing 10,000 operating thermal–fatigue cycles having a DTJ of 100°C. The epoxy molding compound is rated per UL 94, V0 @ 1/8″. Wire bonds are 100% tested in assembly as they are made. Third is the electrical testing, which includes 100% dv/dt at 1600 V/ms and reverse avalanche as part of device characterization. +150 V, 10 mAdc 2.0 kΩ VCC 12 V 12 Vdc + 100 2N2222 4.0 µF D.U.T. 2.0 µs 1.0 kHz CURRENT AMPLITUDE ADJUST 0–10 AMPS 2N6277 100 CARBON 1.0 CARBON 1N5817 Figure 12. Test Circuit for dv/dt and Reverse Surge Current 4 Rectifier Device Data PACKAGE DIMENSIONS C B F S T Q 4 A U 1 3 H K L D G R J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K L Q R S T U INCHES MIN MAX 0.595 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.190 0.210 0.110 0.130 0.018 0.025 0.500 0.562 0.045 0.060 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 MILLIMETERS MIN MAX 15.11 15.75 9.65 10.29 4.06 4.82 0.64 0.89 3.61 3.73 4.83 5.33 2.79 3.30 0.46 0.64 12.70 14.27 1.14 1.52 2.54 3.04 2.04 2.79 1.14 1.39 5.97 6.48 0.000 1.27 CASE 221B–03 (TO–220AC) ISSUE B Rectifier Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. 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