Diodes SMD Type High Voltage,General Purpose Diode KAV103(BAV103 LL-34 Unit: mm Features Silicon Epitaxial Planar Diodes 1.50 1.30 2.64REF 0.50 0.35 For general purpose 3.60 3.30 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Working Inverse Voltage Wiv 200 V Average Rectified Current IO 200 mA DC Forward Current IF 500 mA if 600 mA Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 1.0 second Unit 1 iF(surge) Pulse Width = 1.0 microsecond A 4 Total Power Dissipation at TA = 25 500 PD mW 3.33 Linear Derating Factor from TA = 25 Thermal Resistance Junction-to-Ambient R Operating Junction Temperature Storage Temperature mW/ 350 JA /W TJ -65 to +200 Tstg -65 to +200 Electrical Characteristics Ta = 25 Parameter Symbol Breakdown Voltage BV Reverse Leakage IR Testconditons IR = 100 uA Min Typ Max 250 Unit V VR = 200 V 100 nA VR = 200 V TA = 150 100 uA IF = 100 mA 1.00 V Forward Voltage VF IF = 200 mA 1.25 V Capacitance CT VR = 0.0 V,f = 1.0 MHz 5.0 pF Reverse Recovery Time TRR IF= IR =30 mA ,IRR= 1.0 mA,RL = 100 50 ns www.kexin.com.cn 1