KEXIN KAV103

Diodes
SMD Type
High Voltage,General Purpose Diode
KAV103(BAV103
LL-34
Unit: mm
Features
Silicon Epitaxial Planar Diodes
1.50
1.30
2.64REF
0.50
0.35
For general purpose
3.60
3.30
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Working Inverse Voltage
Wiv
200
V
Average Rectified Current
IO
200
mA
DC Forward Current
IF
500
mA
if
600
mA
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse Width = 1.0 second
Unit
1
iF(surge)
Pulse Width = 1.0 microsecond
A
4
Total Power Dissipation at TA = 25
500
PD
mW
3.33
Linear Derating Factor from TA = 25
Thermal Resistance Junction-to-Ambient
R
Operating Junction Temperature
Storage Temperature
mW/
350
JA
/W
TJ
-65 to +200
Tstg
-65 to +200
Electrical Characteristics Ta = 25
Parameter
Symbol
Breakdown Voltage
BV
Reverse Leakage
IR
Testconditons
IR = 100 uA
Min
Typ
Max
250
Unit
V
VR = 200 V
100
nA
VR = 200 V TA = 150
100
uA
IF = 100 mA
1.00
V
Forward Voltage
VF
IF = 200 mA
1.25
V
Capacitance
CT
VR = 0.0 V,f = 1.0 MHz
5.0
pF
Reverse Recovery Time
TRR
IF= IR =30 mA ,IRR= 1.0 mA,RL = 100
50
ns
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