One. TELEPHONE: (201) 376-2922 (212) 227-6005 TELEX: 13-8720 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 1N3062 • 1N3063 • 1N3064 • 1N4305 • 1N4454 ULTRA FAST LOW CAPACITANCE DIFFUSED SILICON PLANAR* DIODES • • • C . . . 2.0 pF @ V R -0, f - 1.0MHz trr ... 4.0 ns & If • 10 mA. Rr » 10 mA, Vr - 1.0 V BV...75 V (MIN) ABSOLUTE MAXIMUM RATINGS (TA - 25°C) (Note 1) Maximum Temperatures Storage Temperature Operating Temperature 1N3062 1N3063 -65° C to +.200° C -65°C to+175°C Maximum Power Dissipation Total Dissipation Linear Derating Factor Maximum Voltages and Currents WIV Working Inverse Voltage IQ Average Rectified Current If Forward Current Steady State dc if Recurrent Peak Forward Current if (surge) Peak Forward Surge Current Pulse Width - 1.0 s Pulse Width - 1.0 MS 1N3064 1N4454 ~65°C to-H75°C -65° C to+150°C 1N4305 -65° C to+200° C 250 mW 250 mW 500 mW 1.67mW/°C 2.0mW/°C 4.0 mW/°C 50 V 50 V 40 V 75 mA 115 mA 75 mA 115 mA 200 mA 400 mA 225 mA 225 mA 600 mA 500mA 2.0 A 500mA 2.0 A 1.0 A 4.0 A 500 mW 2.85 mW/°C 75V ELECTRICAL CHARACTERISTICS (25°C Ambient Temperature unless otherwise noted) SYMBOL VF CHARACTERISTIC Forward Voltage MIN. 1N3062 1N3063 | 0.700 1N4305 j 0.610 0.550 0.505 IN 3064 1 1N4454 j Reverse Current IR |R BV Breakdown Voltage Reverse Recovery Time «rr Capacitance C RE AV F /-C ^ Rectification Efficiency Forward Voltage Temperature Coefficient MAX. 1.0 IF -20mA 0.850 V IF = 10mA 0.710 0.650 0.575 V V IF - 2.0mA IF - 1.0mA IF -250 MA 1.0 V IF = 10mA 0.1 MA VR = 50 V 100 MA V vR -SOV,TA = iso°c IR-S.OMA 2.0 ns l f - 10 mA, V r = 6,0 V, R L - 100 « 4.0 ns If = l r = 1 0 m A , R L = 100 n. V r = 1.0V 1.0 PF VR =0, f = 1.0 MHz 2.0 PF VF- =0, f = 1.0MHz % f = 1.0MHz 45 1N3062 1N3063 1N3064 1N4454 1N4305 | } J 1 J TEST CONDITIONS V 75 1N4305 1N3062 1N3063 1N3064 1N4454 1N4305 , 1N3062 1N3063 1N3064 1N4454 1N430S UNITS V 1.8 mV/°C 3.0 mV/°C