KODENSHI KDT3001A

AUK CORP.
Photo Transistor
KDT3001A
Description
The KDT3001A is a high-sensitivity NPN silicon phototransistor
mounted in Φ 3mm(T-1) all plastic mold type.
Pin Connection
1. Emitter
2. Collector
Features
Φ3mm(T-1) all plastic mold type
Colorless transparency lens
Single phototransistor output
Applications
Optical detectors/switch
VCR, Camcoders
Floppy disk drivers
Tape End sensor
[TA = 25
Absolute Maximum Ratings
Parameter
Symbol
Min.
Max.
Max.
Collector-Emitter Voltage
VCEO
-
35
V
Emitter-Collector Voltage
VECO
-
6
V
Collector Current
IC
-
20
㎃
Collector Power Dissipation
PC
-
75
㎽
Operating Temperature
Topr.
-20
85
Storage Temperature
Tstg.
-30
85
Soldering Temperature*1
Tsol
-
260
]
*1 : MAX 5s
The contents of this data sheet are subject to change without advance notice for the purpose of improvement.
When using this product, would you please refer to the latest specifications.
KDT3001A
KDT3001A
Rating and Characteristic Curves
Collector current Vs.
Illuminance
Power dissipation Vs.
Ambient temperature
100
Collector current Ic [mA]
Power dissipation PD [mW]
125
100
75
50
25
0
Vcc=10V
Ta=25℃
10
1
0.1
0.01
0
25
50
75
100
1
10
Ambient temperature Ta [℃]
100
1000
10000
Illuminance Ev [lx]
Dark current Vs.
Ambient temperature
Relative intensity Vs.
Wavelength
100
Ta=25℃
Relative intensity [%]
Dark current Iceo [nA]
120
Vcc=10V
10
1
0.1
100
80
60
40
20
0.01
0
20
40
60
80
100
0
400
120
Ambient temperature, Ta [℃]
500
600
700
800
900
Wavelength λ [nm]
Collector current Vs.
Collector - Emitter voltage
Radiant Pattern
Angle (deg.)
Collector current Ic [mA]
5
Ta=25℃
4
Ev=500lx
3
Ev=400lx
Ev=300lx
2
Ev=200lx
1
Ev=100lx
0
0
2
4
6
8
Collector - Emitter voltage Vce [V]
10
Relative intensity (%)
The contents of this data sheet are subject to change without advance notice for the purpose of improvement.
When using this product, would you please refer to the latest specifications.
1000
1100
KDT3001A
[TA = 25
Electrical Characteristics
Parameter
Symbol
Conditions
Dark Current
ICEO
Min.
Ev=0, VCE=10V
Collector Current
ICEL
Ee=1mW/cm , VCE=5V
VCE(SAT)
Spectral Sensitivity
Typ.
Max.
Unit
-
-
200
㎁
1.0
3.0
-
㎃
Ev=1,000lux, IC=0.8mA
-
0.2
0.4
V
λ
-
400
-
1050
㎚
Peak Sensitivity Wavelength
λP
-
-
880
-
㎚
Switching time (Rise time)
tr
-
2.5
-
㎲
tf
Vcc=10V, ICE=1mA,
RL=100Ω
-
4.7
-
㎲
∆θ
-
-
±30
-
deg
Collector-Emitter Saturation Voltage
Switching time (fall time)
Half Angle
2
(Unit : mm)
Package Outline Dimensions
2
1
1
The contents of this data sheet are subject to change without advance notice for the purpose of improvement.
When using this product, would you please refer to the latest specifications.
2
]