AUK CORP. Photo Transistor KDT3001A Description The KDT3001A is a high-sensitivity NPN silicon phototransistor mounted in Φ 3mm(T-1) all plastic mold type. Pin Connection 1. Emitter 2. Collector Features Φ3mm(T-1) all plastic mold type Colorless transparency lens Single phototransistor output Applications Optical detectors/switch VCR, Camcoders Floppy disk drivers Tape End sensor [TA = 25 Absolute Maximum Ratings Parameter Symbol Min. Max. Max. Collector-Emitter Voltage VCEO - 35 V Emitter-Collector Voltage VECO - 6 V Collector Current IC - 20 ㎃ Collector Power Dissipation PC - 75 ㎽ Operating Temperature Topr. -20 85 Storage Temperature Tstg. -30 85 Soldering Temperature*1 Tsol - 260 ] *1 : MAX 5s The contents of this data sheet are subject to change without advance notice for the purpose of improvement. When using this product, would you please refer to the latest specifications. KDT3001A KDT3001A Rating and Characteristic Curves Collector current Vs. Illuminance Power dissipation Vs. Ambient temperature 100 Collector current Ic [mA] Power dissipation PD [mW] 125 100 75 50 25 0 Vcc=10V Ta=25℃ 10 1 0.1 0.01 0 25 50 75 100 1 10 Ambient temperature Ta [℃] 100 1000 10000 Illuminance Ev [lx] Dark current Vs. Ambient temperature Relative intensity Vs. Wavelength 100 Ta=25℃ Relative intensity [%] Dark current Iceo [nA] 120 Vcc=10V 10 1 0.1 100 80 60 40 20 0.01 0 20 40 60 80 100 0 400 120 Ambient temperature, Ta [℃] 500 600 700 800 900 Wavelength λ [nm] Collector current Vs. Collector - Emitter voltage Radiant Pattern Angle (deg.) Collector current Ic [mA] 5 Ta=25℃ 4 Ev=500lx 3 Ev=400lx Ev=300lx 2 Ev=200lx 1 Ev=100lx 0 0 2 4 6 8 Collector - Emitter voltage Vce [V] 10 Relative intensity (%) The contents of this data sheet are subject to change without advance notice for the purpose of improvement. When using this product, would you please refer to the latest specifications. 1000 1100 KDT3001A [TA = 25 Electrical Characteristics Parameter Symbol Conditions Dark Current ICEO Min. Ev=0, VCE=10V Collector Current ICEL Ee=1mW/cm , VCE=5V VCE(SAT) Spectral Sensitivity Typ. Max. Unit - - 200 ㎁ 1.0 3.0 - ㎃ Ev=1,000lux, IC=0.8mA - 0.2 0.4 V λ - 400 - 1050 ㎚ Peak Sensitivity Wavelength λP - - 880 - ㎚ Switching time (Rise time) tr - 2.5 - ㎲ tf Vcc=10V, ICE=1mA, RL=100Ω - 4.7 - ㎲ ∆θ - - ±30 - deg Collector-Emitter Saturation Voltage Switching time (fall time) Half Angle 2 (Unit : mm) Package Outline Dimensions 2 1 1 The contents of this data sheet are subject to change without advance notice for the purpose of improvement. When using this product, would you please refer to the latest specifications. 2 ]