SMN18T50FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BVDSS = 500V Low gate charge: Qg=65nC (Typ.) Low drain-source On resistance: RDS(on)=0.21Ω (Typ.) 100% avalanche tested RoHS compliant device Ordering Information Part Number Marking Package SMN18T50FD SMN18T50 TO-220F-3L GDS TO-220F-3L Marking Information Column 1: Manufacturer Column 2: Production Information e.g.) FYMDD -. F: Factory Management Code -. YMDD: Date Code (Year, Month, Date) Column 3: Device Code AUK AUK FYMDD ΔYMDD SMN18T50 SDB20D45 Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Rating Unit Drain-source voltage VDSS 500 V Gate-source voltage VGSS 30 V Tc=25C 18 A Tc=100C 11.4 A IDM 72 A EAS 900 mJ Repetitive avalanche current (Note 1) IAR 18 A Repetitive avalanche energy (Note 1) EAR 4.8 mJ Power dissipation PD 48 W dv/dt 4.5 V/ns Junction temperature TJ 150 C Storage temperature range Tstg -55~150 C Drain current (DC) * Drain current (Pulsed) ID * Single pulsed avalanche energy Peak diode recovery dv/dt (Note 2) (Note 3) * Drain current limited by maximum junction temperature Rev. date: 27-MAR-13 KSD-T0O097-001 www.auk.co.kr 1 of 8 SMN18T50FD Thermal Characteristics Characteristic Symbol Rating Unit Thermal resistance, junction to case Rth(j-c) Max. 2.6 Thermal resistance, junction to ambient Rth(j-a) Max. 62.5 C/W Electrical Characteristics (TC=25C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit 500 - - V Drain-source breakdown voltage BVDSS ID=250uA, VGS=0 Gate threshold voltage VGS(th) ID=250uA, VDS=VGS 2 - 4 V VDS=500V, VGS=0V - - 1 uA VDS=400V, Tc=125C - - 100 uA VDS=0V, VGS=30V - - 100 nA RDS(ON) VGS=10V, ID=9A - 0.21 0.26 Forward transfer conductance (Note 4) gfs VDS=10V, ID=9A - 24.6 - S Input capacitance Ciss - 3120 - - 355 - Drain-source cut-off current IDSS Gate leakage current IGSS Drain-source on-resistance VDS=25V, VGS=0V, f=1.0MHz Output capacitance Coss Reverse transfer capacitance Crss - 27 - td(on) - 95 - - 375 - - 100 - - 105 - - 65 85 - 17.6 - - 18.4 - Turn-on delay time (Note 4,5) (Note 4,5) tr Turn-off delay time (Note 4,5) td(off) Rise time Fall time (Note 4,5) Total gate charge VDD=250V, ID=18A, RG=25Ω tf (Note 4,5) Gate-source charge Qg (Note 4,5) Gate-drain charge (Note 4,5) VDS=400V, VGS=10V, ID=18A Qgs Qgd pF ns nC Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit - - 18 A - - 72 A Source current (DC) IS Source current (Pulsed) ISM Integral reverse diode in the MOSFET Forward voltage VSD VGS=0V, IS=18A - - 1.4 V trr IS=18A, VGS=0V dIS/dt=100A/us - 507 - ns - 7.2 - uC Reverse recovery time (Note 4,5) Reverse recovery charge (Note 4,5) Qrr Note: 1. Repeated rating: Pulse width limited by safe operating area 2. L=5mH, IAS=18A, VDD=50V, RG=25, Starting TJ=25C 3. IS≤18A, di/dt≤200A/us, VDD≤BVDSS, Starting TJ=25C 4. Pulse test: Pulse width≤300us, Duty cycle≤2% 5. Essentially independent of operating temperature typical characteristics Rev. date: 27-MAR-13 KSD-T0O097-001 www.auk.co.kr 2 of 8 SMN18T50FD Electrical Characteristics Curve Fig. 1 ID - VDS Fig. 2 ID – VGS ℃ - Fig. 3 RDS(ON) - ID Fig. 4 IDR - VSD ℃ Reverse Drain Current, IDR [A] 60 VGS =0V 250㎲ Pulse Test 50 150℃ 40 30 25℃ 20 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Source - Drain Voltage, VSD [V] Fig. 5 Capacitance - VDS Gate-source voltage VGS [V] Fig. 6 VGS - QG Note ID=18A Tc=25 10 VDD=400V 5 0 0 15 30 45 75 60 Total Gate Charge Qg [nC] Rev. date: 27-MAR-13 KSD-T0O097-001 www.auk.co.kr 3 of 8 SMN18T50FD Electrical Characteristics Curve (Continue) Fig. 7 BVDSS - TJ Fig. 8 RDS(ON) - TJ 3.0 RDS(on) ' (Nomalized) 2.5 Note 1.VGS=10A 2. ID=9A 2.0 1.5 1.0 0.5 0.0 -50 -25 Fig. 9 ID - TC 0 25 50 75 100 125 150 Junction Temperature, TJ [°C] C Fig. 10 Safe Operating Area Fig. 11 Transient Thermal Impedance Rev. date: 27-MAR-13 KSD-T0O097-001 www.auk.co.kr 4 of 8 175 SMN18T50FD Fig. 12 Gate Charge Test Circuit & Waveform Fig. 13 Resistive Switching Test Circuit & Waveform Fig. 14 EAS Test Circuit & Waveform Rev. date: 27-MAR-13 KSD-T0O097-001 www.auk.co.kr 5 of 8 SMN18T50FD Fig. 15 Diode Reverse Recovery Time Test Circuit & Waveform Rev. date: 27-MAR-13 KSD-T0O097-001 www.auk.co.kr 6 of 8 SMN18T50FD Package Outline Dimensions Rev. date: 27-MAR-13 KSD-T0O097-001 www.auk.co.kr 7 of 8 SMN18T50FD The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. Rev. date: 27-MAR-13 KSD-T0O097-001 www.auk.co.kr 8 of 8