LESHAN RADIO COMPANY, LTD. DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT4413DW1T1G FEATURE 6 5 ƽ We declare that the material of product is ROHS compliant and halogen free. 4 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking 3 Shipping LMBT4413DW1T1G K13 3000/Tape&Reel LMBT4413DW1T3G K13 10000/Tape&Reel SOT-363/SC-88 MAXIMUM RATINGS - NPN Rating Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage V CBO 60 Vdc Emitter–Base Voltage V 6.0 Vdc 600 mAdc Collector Current — Continuous EBO IC Symbol Value Unit Collector–Emitter Voltage V CEO -40 Vdc Collector–Base Voltage V CBO -60 Vdc Emitter–Base Voltage V -5.0 Vdc -600 mAdc Collector Current — Continuous EBO IC 5 4 C1 B2 E2 Q2 Q1 MAXIMUM RATINGS - PNP Rating 6 E1 B1 C2 1 2 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW RθJA 1.8 556 mW/°C °C/W PD 300 mW 2.4 mW/°C RθJA 417 –55 to +150 °C/W °C TJ , Tstg 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 1/11 LESHAN RADIO COMPANY, LTD. LMBT4413DW1T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max 40 — 60 — 6.0 — — 0.1 — 0.1 -40 — -60 — -5.0 — — -0.1 — -0.1 Unit Q1(NPN) OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (3) (I C = 1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = 0.1 mAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = 0.1 mAdc, I C = 0) Base Cutoff Current (V CE = 35 Vdc, V EB = 0.4 Vdc) Collector Cutoff Current (V CE = 35 Vdc, V EB = 0.4 Vdc) V (BR)CEO Vdc V (BR)CBO V Vdc Vdc (BR)EBO µAdc I BEV µAdc I CEX Q2(PNP) OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (3) (I C = -1.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (I C = -0.1 mAdc, IE = 0) Emitter–Base Breakdown Voltage (I E = -0.1 mAdc, IC = 0) Base Cutoff Current (V CE = -35 Vdc, VEB = -0.4 Vdc) Collector Cutoff Current (V CE = -35 Vdc, VEB = -0.4 Vdc) V (BR)CEO Vdc V (BR)CBO V Vdc Vdc (BR)EBO µAdc I BEV µAdc I CEX 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%. 2/11 LESHAN RADIO COMPANY, LTD. LMBT4413DW1T1G Q1(NPN) ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit ON CHARACTERISTICS ( 3 ) DC Current Gain (I C = 0.1 mAdc, V CE = 1.0 Vdc) (I C = 1.0 mAdc, V CE = 1.0 Vdc) (I C = 10 mAdc, V CE = 1.0 Vdc) (I C = 150 mAdc, V CE = 1.0 Vdc) (I C = 500 mAdc, V CE = 2.0 Vdc) Collector–Emitter Saturation Voltage (I C = 150 mAdc, I B = 15 mAdc) (I C = 500 mAdc, I B = 50 mAdc) Base–Emitter Saturation Voltage (I C = 150 mAdc, I B = 15 mAdc) (I C = 500 mAdc, I B = 50 mAdc) hFE –– 20 40 80 100 40 –– –– –– 300 –– –– –– 0.4 0.75 0.75 –– 0.95 1.2 250 –– –– 6.5 –– 30 1.0 15 VCE(sat) Vdc V BE(sat) Vdc SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (I C = 20 mAdc, V CE= 10Vdc, f = 100 MHz) Collector–Base Capacitance (V CB= 5.0 Vdc, I E = 0, f = 1.0 MHz) Emitter–Base Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) Input Impedance (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Small–Signal Current Gain (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Output Admittance (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) fT MHz C cb pF C eb pF h ie kΩ h re X 10 0.1 8.0 40 500 1.0 30 h fe –4 — µmhos h oe SWITCHING CHARACTERISTICS Delay Time (V CC = 30 Vdc, V EB = 2.0 Vdc td — 15 Rise Time I C = 150 mAdc, I B1 = 15 mAdc) tr — 20 ns Storage Time (V CC = 30 Vdc, I C = 150 mAdc ts — 225 ns Fall Time I B1 = I B2 = 15 mAdc) tf — 30 3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS (Q1 NPN) +30 V +30 V + 16 V 1.0 to 100µs, DUTY CYCLE = 2% 200 Ω + 16 V 1.0 to 100µs, DUTY CYCLE = 2% 1.0 kΩ 1.0 kΩ 0 0 C S*< 10 pF C S* < 10 pF – 2.0V 200Ω <2.0 ns –14 V < 20 ns 1N916 – 4.0 V Scope rise time < 4.0ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn–On Time Figure 2. Turn–Off Time 3/11 LESHAN RADIO COMPANY, LTD. LMBT4413DW1T1G Q2(PNP) ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol Min Max 30 60 100 100 20 –– –– –– 300 –– –– –– – 0.4 – 0.75 – 0.75 –– – 0.95 – 1.3 200 –– –– 8.5 –– 30 1.5 15 Unit ON CHARACTERISTICS DC Current Gain (I C = –0.1 mAdc, V CE = –1.0 Vdc) (I C = –1.0 mAdc, V CE = –1.0 Vdc) (I C = –10 mAdc, V CE = –1.0 Vdc) (I C = –150 mAdc, V CE = –2.0 Vdc)(3) (I C = –500 mAdc, V CE = –2.0 Vdc)(3) Collector–Emitter Saturation Voltage(3) (I C = –150mAdc, I B = –15 mAdc) (I C = –500 mAdc, I B = –50 mAdc) Base–Emitter Saturation Voltage (3) (I C = –150 mAdc, I B = –15 mAdc) (I C = –500 mAdc, I B = –50 mAdc) hFE –– VCE(sat) V Vdc Vdc BE(sat) SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (I C = –20mAdc, V CE= –10 Vdc, f = 100 MHz) Collector–Base Capacitance (V CB= –10 Vdc, I E = 0, f = 1.0 MHz) Emitter–Base Capacitance (V BE = –0.5 Vdc, I C = 0, f = 1.0 MHz) Input Impedance (V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) Small–Signal Current Gain (V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) Output Admittance (V CE= –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz) fT C MHz pF cb C eb pF h ie kΩ h re X 10 0.1 8.0 60 500 1.0 100 h fe –4 — µmhos h oe SWITCHING CHARACTERISTICS Delay Time (V CC = – 30 Vdc, V EB = –2.0 Vdc, td — 15 Rise Time I C = –150mAdc, I B1 = –15 mAdc) td — 20 ns Storage Time (V CC = –30 Vdc, I C = –150 mAdc, ts — 225 ns Fall Time I B1 = I B2 = –15 mAdc) tf — 30 3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS (Q2 PNP) – 30 V – 30 V 200 +2.0V <2.0 ns 200 < 20 ns + 14V 1.0 k 1.0 k 0 0 C S* < 10 pF –16 V 1.0 to 100µs, DUTY CYCLE = 2% Figure 3. Turn–On Time 1N916 –16 V C S*< 10 pF 1.0 to 100µs, DUTY CYCLE = 2% +4.0 V Scope rise time < 4.0ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 4. Turn–Off Time 4/11 LESHAN RADIO COMPANY, LTD. LMBT4413DW1T1G TRANSIENT CHARACTERISTICS (Q1 NPN) T J = 25°C T J = 100°C 30 10 7.0 20 3.0 QT 2.0 Q, CHARGE (pC) CAPACITANCE (pF) C obo 10 7.0 5.0 C cb 3.0 1.0 0.7 0.5 0.3 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 10 20 30 50 70 100 200 REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 5. Capacitance Figure 6. Charge Data 300 500 100 100 I C /I B = 10 70 70 V CC= 30V I C/I B =10 tr 50 50 t , RISE TIME (ns) t r @V CC=30V t r @V CC=10V 30 t d@V EB=2.0V t d@V EB=0V 20 10 tf 30 20 10 7.0 7.0 5.0 5.0 10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 7. Turn–On Time Figure 8. Rise and Fall Time 300 300 500 100 t s’ = t s – 1/8 t f I B1 = I B2 I C/I B = 10 to 20 70 50 t f , FALL TIME (ns) 200 t f , STORAGE TIME (ns) QA 0.2 0.1 2.0 t , TIME (ns) V CC = 30 V I C / I B = 10 5.0 100 70 50 I C /I B = 20 V CC = 30 V I B1 = I B2 30 I C /I B = 10 20 10 7.0 30 5.0 10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 9. Storage Time Figure 10. Fall Time 500 5/11 LESHAN RADIO COMPANY, LTD. LMBT4413DW1T1G SMALL–SIGNAL CHARACTERISTICS(Q1 NPN) NOISE FIGURE V CE = 10 Vdc, T A = 25°C Bandwidth = 1.0 Hz 10 10 I C = 1.0 mA, R S = 150 Ω R S = OPTIMUM RS = SOURCE RS = RESISTANCE I C = 50 µA, R S = 4.0 kΩ 6.0 4.0 2.0 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) f = 1.0 kHz I C = 500 µA, R S = 200 Ω I C = 100 µA, R S = 2.0 kΩ 8.0 0 I C = 50 µA I C = 100 µA I C = 500 µA I C = 1.0 mA 6.0 4.0 2.0 0 0.010.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 500 100 200 f , FREQUENCY (kHz) 500 1.0k 2.0k 5.0k 10k 20k 50k 100k R S, SOURCE RESISTANCE (kΩ) Figure 11. Frequency Effects Figure 12. Source Resistance Effects h PARAMETERS (V CE = 10 Vdc, f = 1.0 kHz, T A = 25°C) This group of graphs illustrates the relationship between h fe and other “h” parameters for this series of ransistors. To obtain these curves, a high–gain and a low–gain unit were selected from the LMBT4413DW1T1G lines, and the same units were used to develop the correspondingly numbered curves on each graph. 300 h ie, INPUT IMPEDANCE (kΩ) 50 h fe, CURRENT GAIN 200 100 Q1 NPN UNIT 1 Q1 NPN UNIT 2 70 50 30 20 20 10 5.0 2.0 1.0 0.5 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 13. Current Gain Figure 14. Input Impedance 10 7.0 5.0 Q1 NPN UNIT 1 Q1 NPN UNIT 2 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.1 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 h oe , OUTPUT ADMITTANCE ( µmhos) 0.1 h re, VOLTAGE FEEDBACK RATIO (X 10 –4 ) Q1 NPN UNIT 1 Q1 NPN UNIT 2 7.0 5.0 10 100 50 Q1 NPN UNIT 1 Q1 NPN UNIT 2 20 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 15. Voltage Feedback Ratio Figure 16. Output Admittance 10 6/11 LESHAN RADIO COMPANY, LTD. LMBT4413DW1T1G STATIC CHARACTERISTICS (Q1 NPN) V CE= 1.0 V V CE=10 V 2.0 T J = 125°C 1.0 25°C 0.7 0.5 –55°C 0.3 h FE , NORMALIZED CURRENT GAIN 3.0 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 20 300 500 I C , COLLECTOR CURRENT (mA) V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 17. DC Current Gain 1.0 T J = 25°C 0.8 0.6 10 mA I C=1.0 mA 100mA 500mA 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 I B , BASE CURRENT (mA) Figure 18. Collector Saturation Region 10 +0.5 T J = 25°C V BE(sat) @ I C /I B =10 0.6 V BE @ V CE =1.0 V 0.4 0.2 θ VC for V CE(sat) 0 COEFFICIENT (mV/ °C) V, VOLTAGE ( VOLTS ) 0.8 V CE(sat) @ I C /I B =10 0 – 0.5 –1.0 –1.5 θ VB for V BE –2.0 – 2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 17. “On” Voltages Figure 20. Temperature Coefficients 500 7/11 LESHAN RADIO COMPANY, LTD. LMBT4413DW1T1G TYPICAL TRANSIENT CHARACTERISTICS (Q2 PNP) T J = 25°C T J = 100°C 30 10 7.0 C eb 10 7.0 C cb 5.0 3.0 2.0 1.0 0.7 0.5 QT 0.3 3.0 2.0 0.1 QA 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 10 20 30 50 70 100 200 REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 3. Capacitance Figure 4. Charge Data 300 500 100 100 I C /I B = 10 70 t r, RISE TIME (ns) t r @V CC=30V t r @V CC=10V 30 t d@VBE(off) = 2.0V t d@VBE(off) = 0V 20 V CC= 30V I C / I B =10 70 50 50 30 20 10 10 7.0 7.0 5.0 5.0 10 20 30 50 70 100 200 300 10 500 20 30 50 70 100 200 300 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 5. Turn–On Time Figure 6. Rise Time 500 200 I C/I B = 20 t s , RISE TIME (ns) t , TIME (ns) V CC = 30 V I C / I B = 10 5.0 Q, CHARGE (nC) CAPACITANCE (pF) 20 100 I C/I B = 10 70 50 t s’ = t s – 1/8 t f I B1 = I B2 30 20 10 20 30 50 70 100 200 300 500 I C , COLLECTOR CURRENT (mA) Figure 7. Storage Time 8/11 LESHAN RADIO COMPANY, LTD. LMBT4413DW1T1G SMALL–SIGNAL CHARACTERISTICS (Q2 PNP) NOISE FIGURE V CE = –10 Vdc, T A = 25°C Bandwidth = 1.0 Hz 10 10 f = 1.0 kHz 8 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 8 I C = 1.0 mA, R S = 430Ω I C = 500 µA, R S = 560Ω 6 I C = 50 µA, R S = 2.7kΩ I C = 100 µA, R S = 1.6 kΩ 4 2 RS = OPTIMUM SOURCE RESISTANCE 0 I C = 50 µA 100 µA 500 µA 1.0 mA 6 4 2 0 0.010.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1k 2k 5k 10k 20k f , FREQUENCY (kHz) R S, SOURCE RESISTANCE (Ω) Figure 8. Frequency Effects Figure 9. Source Resistance Effects 50k h PARAMETERS (V CE = –10 Vdc, f = 1.0 kHz, T A = 25°C) This group of graphs illustrates the relationship between h fe and other “h” parameters for this series of ransistors. To obtain these curves, a high–gain and a low–gain unit were selected from the LMBT4413DW1T1G lines, and the same units were used to develop the correspon dingly numbered curves on each graph. 100 700 50 h ie, INPUT IMPEDANCE (kΩ) 1000 h fe, CURRENT GAIN 500 300 200 Q2 PNP UNIT 1 Q2 PNP UNIT 2 100 70 50 20 10 5 2 1 0.5 0.2 0.1 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 I C , COLLECTOR CURRENT (mAdc) I C , COLLECTOR CURRENT (mAdc) Figure 10. Current Gain Figure 11. Input Impedance 20 Q2 PNP UNIT 1 Q2 PNP UNIT 2 10 5.0 2.0 1.0 0.5 0.2 0.1 0.1 0.1 10 h oe , OUTPUT ADMITTANCE ( µmhos) h re, VOLTAGE FEEDBACK RATIO (X 10 –4 ) Q2 PNP UNIT 1 Q2 PNP UNIT 2 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 7.0 5.0 10 500 100 50 20 Q2 PNP UNIT 1 Q2 PNP UNIT 2 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 I C , COLLECTOR CURRENT (mAdc) I C , COLLECTOR CURRENT (mAdc) Figure 12. Voltage Feedback Ratio Figure 13. Output Admittance 7.0 5.0 10 9/11 LESHAN RADIO COMPANY, LTD. LMBT4413DW1T1G STATIC CHARACTERISTICS (Q2 PNP) h FE , NORMALIZED CURRENT GAIN 3.0 V CE= 1.0 V V CE= 10 V 2.0 T J = 125°C 25°C 1.0 –55°C 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 20 300 500 I C , COLLECTOR CURRENT (mA) V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 14. DC Current Gain 1.0 0.8 0.6 I C=1.0 mA 10 mA 100mA 500mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 I B , BASE CURRENT (mA) Figure 15. Collector Saturation Region + 0.5 T J = 25°C V, VOLTAGE ( VOLTS ) 0 V BE(sat) @ I C /I B =10 0.8 0.6 COEFFICIENT (mV/ °C) 10 V BE @ V CE =1.0 V 0.4 0.2 V CE(sat) @ I C /I B =10 θ VC for VCE(sat) – 0.5 –1.0 –1.5 θ VS for V BE –2.0 – 2.5 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 16. “On” Voltages Figure 17. Temperature Coefficients 500 10/11 LESHAN RADIO COMPANY, LTD. LMBT4413DW1T1G SC−88 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. D e 6 5 4 1 2 3 HE DIM A A1 A3 b C D E e L HE −E− b 6 PL 0.2 (0.008) M E M MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 GENERIC MARKING DIAGRAM* A3 C 6 6 XX M A1 L 1 XX OR M A 1 XX = Specific Device Code M = Date Code 11/11