NIR/RED ENHANCED 5 mm2 PHOTODIODE-PREAMPLIFIER FEATURES .050 MIN .085 +V ODA-5W-100K • Large active area .078 Vout • Low noise CASE ∅.370 ∅.358 .031 .035 • High sensitivity • Custom gains available (∅.325) ∅.016 ∅.019 –V GND • Hermetically sealed TO-39 .028 (∅.200 PIN CTRS) (.012 MAX) .163 SHOWN WITH CAP REMOVED FOR CLARITY RoHS R1 C1 3 IN D1 +V – IN + U1 0.1 ufd 4 1 2 –V V OUT 0.1 ufd ELECTRO-OPTICAL CHARACTERISTICS AT 23°C PARAMETERS Dark Offset Dark Offset Noise Sensitivity Frequency Response (-3 db) NEP Transimpedence Gain Supply Current TEST CONDITIONS Vs = ± 15 V BW = 0.1 to 800 kHz TYP 477 Vs = ± 15 MAX UNITS 1000 µV rms ± 1.0 mV Vs = ± 15 55 63 V/mW Vs = ± 15 500 800 kHz λ = 940 nm 6.76 pW/√Hz Vs = ± 15 V 6.2 λ = 940 nm λ = 940 nm THERMAL PARAMETERS Voltage Supplies Power Dissipation Storage and Operating Temperature MIN Soldering Temperature (1/16" from case for 3 secconds max) 100 7.5 kΩ mA ± 5 to ± 15V 225 mW –25° to +100° C +260° C 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013 NIR/RED ENHANCED 5 mm2 PHOTODIODE-PREAMPLIFIER ODA-5W-100K TYPICAL SPECTRAL RESPONSE 70 RESPONSIVITY (V/mW) 60 50 40 30 20 10 0 300 400 500 600 700 800 900 1000 1100 WAVELENGTH (nm) 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013