PHOTODIODE 100 mm2 SXUV100 FEATURES • Single active area • Detection to 1 nm • Stable response after exposure to EUV/UV conditions • Protective cover plate Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area Responsivity, R Shunt Resistance, Rsh TEST CONDITIONS MIN TYP MAX 100 10 mm x 10 mm UNITS mm2 (see graph on next page) @ ± 10 mV 10 MOhms Reverse Breakdown Voltage, VR IR = 1 µA 10 Volts Capacitance, C VR = 0V 6 nF RL = 50Ω , VR = 15V 250 nsec Response Time, tr THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Ambient Nitrogen or Vacuum Maximum Junction Temperature Lead Soldering Temperature1 -10° TO 40°C -20°C TO 80°C 70°C 260°C 1 0.08" from case for 10 seconds 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013 PHOTODIODE 100 mm2 Responsivity (A/W) 0.35 SXUV100 PHOTON RESPONSIVITY 0.30 0.25 0.20 0.15 0.10 0.05 0.0 1 10 Wavelength (nm) 100 1000 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013