OPTODIODE AXUV63HS1

PHOTODIODE 63 mm2
AXUV63HS1
FEATURES
•
•
•
•
Circular active area
Ideal for electron detection
100% internal QE
High speed
Dimensions are in inch [metric] units.
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
TEST CONDITIONS
MIN
MAX
A/W
(see graphs on next page)
Responsivity, R
UNITS
mm2
63
Ø9mm
Active Area
TYP
160
Reverse Breakdown Voltage, VR
IR = 1µA
Capacitance, C
VR = 0V
10
pF
RL = 50Ω, VR = 2V
2
nsec
VR = 150V
100
nA
Rise Time
Dark Current
Volts
THERMAL PARAMETERS
STORAGE AND OPERATING TEMPERATURE RANGE
Ambient1
-10° TO 40°C1
Nitrogen or Vacuum
-20°C TO 80°C
70°C
Maximum Junction Temperature
Lead soldering temperature
2
260°C
1
Temperatures exceeding these parameters may create oxide growth on the active area.
Over time responsivity to low energy radiation and wavelengths below 150nm will be compromised.
2
0.080" from case for 10 seconds.
Shipped with temporary cover to protect photodiode and wire bond.
Review Opto Diode “Handling Precautions for IRD Detectors” prior to removing cover.
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision February 26, 2013
PHOTODIODE 63 mm2
RESPONSIVITY (A/W)
0.30
AXUV63HS1
ELECTRON RESPONSE
0.25
0.20
0.15
0.10
0.05
0.00
100
1000
10,000
100,000
ENERGY (ev)
RESPONSIVITY (A/W)
0.30
EUV-UV PHOTON RESPONSE
0.25
0.20
0.15
0.10
0.05
0.00
0
RESPONSIVITY (A/W)
0.5
50
100
150
WAVELENGTH (nm)
200
250
UV-VIS-NIR PHOTON RESPONSIVITY
0.4
0.3
0.2
0.1
0.0
200
300
400
500
600
700
800
900
1000
1100
WAVELENGTH (nm)
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: [email protected], Website: www.optodiode.com
Revision February 26, 2013