PHOTODIODE 63 mm2 AXUV63HS1 FEATURES • • • • Circular active area Ideal for electron detection 100% internal QE High speed Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS MIN MAX A/W (see graphs on next page) Responsivity, R UNITS mm2 63 Ø9mm Active Area TYP 160 Reverse Breakdown Voltage, VR IR = 1µA Capacitance, C VR = 0V 10 pF RL = 50Ω, VR = 2V 2 nsec VR = 150V 100 nA Rise Time Dark Current Volts THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Ambient1 -10° TO 40°C1 Nitrogen or Vacuum -20°C TO 80°C 70°C Maximum Junction Temperature Lead soldering temperature 2 260°C 1 Temperatures exceeding these parameters may create oxide growth on the active area. Over time responsivity to low energy radiation and wavelengths below 150nm will be compromised. 2 0.080" from case for 10 seconds. Shipped with temporary cover to protect photodiode and wire bond. Review Opto Diode “Handling Precautions for IRD Detectors” prior to removing cover. 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013 PHOTODIODE 63 mm2 RESPONSIVITY (A/W) 0.30 AXUV63HS1 ELECTRON RESPONSE 0.25 0.20 0.15 0.10 0.05 0.00 100 1000 10,000 100,000 ENERGY (ev) RESPONSIVITY (A/W) 0.30 EUV-UV PHOTON RESPONSE 0.25 0.20 0.15 0.10 0.05 0.00 0 RESPONSIVITY (A/W) 0.5 50 100 150 WAVELENGTH (nm) 200 250 UV-VIS-NIR PHOTON RESPONSIVITY 0.4 0.3 0.2 0.1 0.0 200 300 400 500 600 700 800 900 1000 1100 WAVELENGTH (nm) 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision February 26, 2013