ROITHNER LDM-0808-300M-91

LDM-0808-300m-91
TECHNICAL DATA
High Power Infrared Laser Diode
Features
• CW Output Power: 300 mW
• Typical 808 nm Emission Wavelength
• High-efficiency Quantum Well Structure
• TO5 Package
Applications
• Solid-state Laser Pumping
• Medical Usage
• Target Designator
• Free-space Optical Communication
PIN CONNECTION
1. Laserdiode cathode
2. Laserdiode anode and photodiode cathode
3. Photodiode anode
Specifications (25°C)
Type
Optical Specification
CW Output Power PO
Peak Wavelength Δ
Spectral Width Δλ
Emitting Area
Wavelength Temperature Coefficient
Beam Divergence θ┴×θ║
Polarization
Electrical Specification
Slope Efficiency ES
Threshold Current Ith
Operation Current IO
Operation Voltage Vf
Series Resistance Rd
Package Style
Absolute Maximum Ratings
Reverse Voltage Vr
Operating Temperature TO
Storage Temperature Tstg
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LDM-0808-300m-91
Unit
300
808±10
≤ 3.0
30x1
0.3
40x10
TE
mW
nm
nm
µm
nm/°C
Deg
≥ 1.0
≤ 0.09
≤ 0.4
≤2
≤1
TO5
W/A
A
A
V
Ω
2.0
10 … 30
-40 … 85
V
°C
°C
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Package Dimensons
TO5 Package (Unit:mm)
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Typical Performance Curves
Notes
1. High power laser diodes are high energy laser devices. It is harmful to human body and
health. Never look directly into the laser output port.
2. High power laser diodes could operate in forward voltage. The reverse current and
voltage should not be higher than 25µA and 3V, respectively.
3. Heavy humidity can get dew on the LD then damage the LD.
4. The generated heat must be removed in time when the LD working.
5. The high temperature will effect the performance of the products. The lifetime can also
be shortened by high temperature.
6. The operating current and optical power of laser must not be higher than the given rate
current and power. The excessive current would accelerate aging and shorten lifetime,
even damage the LD.
7. The semiconductor laser diode is a sensitive electronic device. Please observe
precaution for handling electrostatitic sensitive devices.
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