ROITHNER RLT1300-BL

RLT1300-BL
TECHNICAL DATA
Infrared Laser Diode
Features
Applications
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Lasing Mode Structure: single mode
Peak Wavelength : typ. 1310 nm
Optical Ouput Power: 5 mW
Package: 5.6 mm, 4-pin, ball lens
Optical Fiber Communication
Free-space Optical Communication
Specifications (25°C)
Characteristics
Optical Specifications
CW Output Power
Center Wavelength
Spectral Width
Emitting area
Wavelength Temperature Coefficient
Beam Divergence
Polarization
Electrical Specifications
Threshold Current
Operating Current
Operating Voltage
Monitor Current
Package Style
Absolute Maximum Ratings
Reverse Voltage
Operating Temperature
Storage Temperature
07.10.2011
Symbol
Min.
Typ.
Max.
Unit
PO
λC
Δλ
WxH
1290
-
5
1310
≤ 3.0
4x1
0.35
40x20
TE
1330
-
mW
nm
nm
µm
nm/°C
Deg
-
10
27
-
mA
mA
V
mA
θ┴×θ║
Ith
Iop
Vop
IPD
TO18, 4-pin
UR
TOP
TSTG
RLT1300-BL
+10 … +30
-40 ... +85
V
°C
°C
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Electrical Connection
TO18 Package (Buttom View)
Pin 1: PD Cathode
Pin 2: n.c.
Pin 3: LD Cathode
Pin 4: LD Anode, PD Anode
Notes
1. High power laser diodes are high energy laser devices. It is harmful to human body and
health. Never look directly into the laser output port.
2. High power laser diodes could operate in forward voltage. The reverse current and
voltage should not be higher than 25µA and 3V, respectively.
3. Heavy humidity can get dew on the LD then damage the LD.
4. The generated heat must be removed in time when the LD working.
5. The high temperature will effect the performance of the products. The lifetime can also be
shortened by high temperature.
6. The operating current and optical power of laser must not be higher than the given rate
current and power. The excessive current would accelerate aging and shorten lifetime,
even damage the LD.
7. The semiconductor laser diode is a sensitive electronic device. Please observe precaution
for handling electrostatitic sensitive devices.
07.10.2011
RLT1300-BL
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