SECOS SEF103MH

SEF101MH~SEF107MH
VOLTAGE 50 ~ 1000 V
1.0 Amp High Efficiency Recovery Rectifiers
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen-free
FEATURES





SOD-123MH
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application
in order to optimize board space.
High current capability.
Ultrafast recovery time for high efficiency.
Glass passivated chip junction.
A
B
F
D
C
MECHANICAL DATA






Case: Molded plastic, SOD-123MH
Epoxy: UL94-V0 rated flame retardant
Terminals: Plated terminals, solderable per MIL-STD-750,
Method 2026.
Polarity: Indicated by cathode band
Mounting Position: Any
Weight: 0.011 gram (Approximately)
E
E
Millimeter
REF.
Millimeter
REF.
Min.
Max.
Min.
Max.
A
3.30
3.70
D
3.10 (Max.)
B
1.40
1.80
E
0.80 (Typ.)
C
0.60
1.00
F
0.30 (Typ.)
MARKING CODE
Part Number
Marking Code
Part Number
Marking Code
SEF101MH
SEF102MH
SEF103MH
SEF104MH
H1
H2
H3
H4
SEF105MH
SEF106MH
SEF107MH
H5
H6
H7
PACKAGE INFORMATION
Package
MPQ
LeaderSize
SOD-123MH
3K
7’ inch
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified.)
Part Number
Parameter
Symbol
SEF
101MH
SEF
102MH
SEF
103MH
SEF
104MH
SEF
105MH
SEF
106MH
SEF
107MH
Unit
Repetitive Peak
Reverse Voltage (Max.)
VRRM
50
100
200
400
600
800
1000
V
RMS Voltage (Max.)
VRMS
35
70
140
280
420
560
700
V
VR
50
100
200
400
600
800
1000
V
Continuous Reverse Voltage(Max.)
http://www.SeCoSGmbH.com/
09-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 3
SEF101MH~SEF107MH
VOLTAGE 50 ~ 1000 V
1.0 Amp High Efficiency Recovery Rectifiers
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Part Number
Parameter
Symbol
Forward Voltage (Max.)
VF
Average Forward
Rectified Current (Max.)
IO
Forward Surge Current
DC Reverse Current at
Rated DC Blocking Voltage (Max.)
Thermal Resistance
Junction to Ambient (Typ.)
SEF
101
MH
SEF
102
MH
SEF
103
MH
1
SEF
104
MH
SEF
105
MH
1.3
SEF
106
MH
1.7
1
IFSM
25
5
SEF
107
MH
Unit
V
A
Ambient
Temperature =50°C
A
8.3ms single half
sine-wave
superimposed on
rated load (JEDEC
method)
A
IR
150
RJA
42
°C/W
CJ
70
pF
Storage and Operating
Temperature Range
TSTG, TJ
-65 ~ 175, -55 ~ 150
°C
Reverse recovery time
TRR
Diode Junction Capacitance (Typ.)
http://www.SeCoSGmbH.com/
09-Feb-2011 Rev. A
50
75
Testing
Condition
VR=VRRM, TA=25°C
VR=VRRM,TA=100°C
f=1MHz and applied
4V DC reverse voltage
nS
Any changes of specification will not be informed individually.
Page 2 of 3
SEF101MH~SEF107MH
Elektronische Bauelemente
VOLTAGE 50 ~ 1000 V
1.0 Amp High Efficiency Recovery Rectifiers
RATINGS AND CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
09-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 3