Freescale AO4611/ MC4611 N & P-Channel 60-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed PRODUCT SUMMARY rDS(on) (mΩ) VDS (V) 35 @ VGS = 10V 60 50 @ VGS = 4.5V 57 @ VGS = -10V -60 77 @ VGS = -4.5V ID(A) 7.7 6.5 -5.0 -4.3 Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Nch Limit Pch Limit VDS Drain-Source Voltage 60 -60 VGS Gate-Source Voltage ±20 ±20 TA=25°C 7.7 -4.3 ID Continuous Drain Current a TA=70°C 6.5 -3.9 IDM Pulsed Drain Current b 60 -60 a I 3 -2.9 Continuous Source Current (Diode Conduction) S T =25°C 2.1 2.1 A PD Power Dissipation a TA=70°C 1.3 1.3 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum 62.5 RθJA 110 Units V A A W °C Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 www.freescale.net.cn Freescale AO4611/ MC4611 Electrical Characteristics Parameter Gate-Source Threshold Voltage Symbol VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-Resistance a rDS(on) Forward Transconductance a gfs Diode Forward Voltage a VSD Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Test Conditions Static VDS = VGS, ID = 250 uA (N-ch) VDS = VGS, ID = -250 uA (P-ch) VDS = 0 V, VGS = ±20 V VDS = 20 V, VGS = 0 V (N-ch) VDS = -20 V, VGS = 0 V (P-ch) VDS = 5 V, VGS = 10 V (N-ch) VDS = -5 V, VGS = -10 V (P-ch) VGS = 10 V, ID = 5.4 A (N-ch) VGS = 4.5 V, ID = 4.4 A (N-ch) VGS = -10 V, ID = -5.2 A (P-ch) VGS = -4.5 V, ID = -4.2 A (P-ch) VDS = 15 V, ID = 5.4 A (N-ch) VDS = -15 V, ID = -5.2 A (P-ch) IS = 1.5 A, VGS = 0 V (N-ch) IS = -1 A, VGS = 0 V (P-ch) Dynamic b N - Channel VDS = 30 V, VGS = 4.5 V, ID = 5.4 A N - Channel VDD = 30 V, RL = 5.6 Ω, ID = 5.4 A, VGEN = 10 V, RGEN = 6 Ω N - Channel VDS = 15 V, VGS = 0 V, f = 1 MHz P - Channel VDS = -30 V, VGS = -4.5 V, ID = -5.2 A P - Channel VDD = -30 V, RL = 5.8 Ω, ID = -5.2 A, VGEN = -10 V, RGEN = 6 Ω P - Channel VDS = -15 V, VGS = 0 V, f = 1 MHz Min Typ Max 1 -1 ±100 1 -1 10 -10 Unit V V nA uA A A 33 50 57 77 22 25 0.72 -0.77 5 3.9 8.2 8 9 49 14 1465 126 114 20 5.6 7.9 6 13 71 27 1817 129 111 mΩ mΩ S S V V nC ns pF nC ns pF Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. 2 www.freescale.net.cn Freescale AO4611/ MC4611 Typical Electrical Characteristics - N-channel 5 0.08 4 0.06 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) TJ = 25°C 3V 0.04 3.5V 0.02 3 2 1 4V,4.5V,6V,8V,10V 0 0 0 2 4 6 0 1 2 3 VGS - Gate-to-Source Voltage (V) ID-Drain Current (A) 1. On-Resistance vs. Drain Current 2. Transfer Characteristics 100 0.1 TJ = 25°C ID = 5.4A TJ = 25°C 0.08 IS - Source Current (A) RDS(on) - On-Resistance(Ω) 4 0.06 0.04 0.02 0 10 1 0.1 0.01 0 2 4 6 8 10 0 VGS - Gate-to-Source Voltage (V) 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 6 3000 F = 1MHz 10V,8V,6V,4.5V,4V 4 Capacitance (pf) ID - Drain Current (A) 2500 3.5V 3V 2 2000 Ciss 1500 1000 500 0 Coss Crss 0 0 0.05 0.1 0.15 0.2 0.25 0.3 0 5 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics 6. Capacitance 3 www.freescale.net.cn Freescale AO4611/ MC4611 Typical Electrical Characteristics - N-channel 2.5 VDS = 30V 9 ID = 5.4A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 8 7 6 5 4 3 2 1 2 1.5 1 0.5 0 -50 0 10 20 30 Qg - Total Gate Charge (nC) 0 25 50 75 100 125 150 TJ -JunctionTemperature(°C) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 100 PEAK TRANSIENT POWER (W) 1000 10 uS 100 100 uS 1 mS ID Current (A) -25 40 10 mS 10 100 mS 1 SEC 1 10 SEC 100 SEC DC 1 0.1 Idm limit 80 60 40 20 Limited by RDS 0 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.2 0.1 RθJA(t) = r(t) + RθJA RθJA = 110°C /W 0.1 0.05 0.02 0.01 P(pk) t1 t2 Single Pulse TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient 4 www.freescale.net.cn Freescale AO4611/ MC4611 Typical Electrical Characteristics - P-channel 5 TJ = 25°C 4 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) 0.15 0.1 3V 3.5V 0.05 3 2 1 4V,4.5V,6V,8V,10V 0 0 0 2 4 ID-Drain Current (A) 0 6 1 1. On-Resistance vs. Drain Current 3 4 2. Transfer Characteristics 100 0.2 TJ = 25°C ID = -5.2A 0.18 TJ = 25°C IS - Source Current (A) 0.16 0.14 0.12 0.1 0.08 0.06 0.04 10 1 0.1 0.02 0 0.01 0 2 4 6 8 10 0 VGS - Gate-to-Source Voltage (V) 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 3000 6 F = 1MHz 10V,8V,6V,4.5V,4V 2500 3.5V 4 Capacitance (pf) ID - Drain Current (A) RDS(on) - On-Resistance(Ω) 2 VGS - Gate-to-Source Voltage (V) 3V 2 Ciss 2000 1500 1000 500 0 Coss Crss 0 0 0.1 0.2 0.3 0.4 0.5 0 5 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics 6. Capacitance 5 www.freescale.net.cn Freescale AO4611/ MC4611 Typical Electrical Characteristics - P-channel 2.5 VDS = -30V 9 ID = -5.2A RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 8 7 6 5 4 3 2 2 1.5 1 1 0 0.5 0 10 20 30 40 -50 -25 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ -JunctionTemperature(°C) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 1000 PEAK TRANSIENT POWER (W) 120 10 uS 100 100 uS 1 mS ID Current (A) 0 10 mS 10 100 mS 1 SEC 1 10 SEC 100 SEC DC 1 0.1 Idm limit Limited by RDS 100 80 60 40 20 0 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.2 0.1 RθJA(t) = r(t) + RθJA RθJA = 110°C /W 0.1 0.05 0.02 0.01 P(pk) t1 t2 Single Pulse TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient 6 www.freescale.net.cn Freescale AO4611/ MC4611 Package Information Note: 1. All Dimension Are In mm. 2. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall Not Exceed 0.10 mm Per Side. 3. Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold Flash, Tie Bar Burrs, Gate Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The Plastic Body. 4. The Package Top May Be Smaller Than The Package Bottom. 5. Dimension "B" Does Not Include Dambar Protrusion. Allowable Dambar Protrusion Shall Be 0.08 mm Total In Excess Of "B" Dimension At Maximum Material Condition. The Dambar Cannot Be Located On The Lower Radius Of The Foot. 7 www.freescale.net.cn