ANALOGPOWER AM7510C

Analog Power
AM7510C
N & P-Channel 100-V (D-S) MOSFET
VDS (V)
Key Features:
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
100
-100
Typical Applications:
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
PRODUCT SUMMARY
rDS(on) (mΩ)
62 @ VGS = 10V
72 @ VGS = 5.5V
275 @ VGS = -10V
295 @ VGS = -4.5V
DFN5x6-8L
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Nch Limit Pch Limit
VDS
Drain-Source Voltage
100
-100
VGS
Gate-Source Voltage
±20
±20
TA=25°C
4.8
-2.5
ID
Continuous Drain Current a
TA=70°C
3.7
-2
IDM
Pulsed Drain Current b
20
-15
IS
3
-2.7
Continuous Source Current (Diode Conduction) a
T
=25°C
2.1
2.1
A
PD
Power Dissipation a
TA=70°C
1.3
1.3
TJ, Tstg
-55 to 150
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient a
ID(A)
4.8
4.4
-2.5
-2.4
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Symbol Maximum
62.5
RθJA
110
Units
V
A
A
W
°C
Units
°C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS_AM7510C_1A
Analog Power
AM7510C
Electrical Characteristics
Parameter
Symbol
Gate-Source Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
ID(on)
Drain-Source On-Resistance
rDS(on)
Forward Transconductance
gfs
Diode Forward Voltage
VSD
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
© Preliminary
Qg
Qgs
Qgd
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Ciss
Coss
Crss
Test Conditions
Static
VDS = VGS, ID = 250 uA (N-ch)
VDS = VGS, ID = -250 uA (P-ch)
VDS = 0 V, VGS = ±20 V
VDS = 80 V, VGS = 0 V
(N-ch)
VDS = -80 V, VGS = 0 V (P-ch)
VDS = 5 V, VGS = 10 V
(N-ch)
VDS = -5 V, VGS = -10 V (P-ch)
VGS = 10 V, ID = 3.8 A
(N-ch)
VGS = 4.5 V, ID = 3.7 A (N-ch)
VGS = -10 V, ID = -2 A
(P-ch)
VGS = -4.5 V, ID = -1.9 A (P-ch)
VDS = 15 V, ID = 3.8 A
(N-ch)
VDS = -15 V, ID = -2.0 A (P-ch)
IS = 1.5 A, VGS = 0 V
(N-ch)
IS = -1.3 A, VGS = 0 V
(P-ch)
Dynamic
N - Channel
VDS = 50 V, VGS = 4.5 V, ID = 3.8 A
P - Channel
VDS = -50 V, VGS = 4.5 V, ID = -2 A
N - Channel
VDD = 50 V, RL = 13.2 Ω, ID = 3.8 A,
VGEN = 10 V, RGEN = 6 Ω
P - Channel
VDD = -50 V, RL = 25 Ω, ID = -2 A,
VGEN = -10 V, RGEN = 6 Ω
N - Channel
VDS = 15 V, VGS = 0 V, f = 1 MHz
P - Channel
VDS = -15 V, VGS = 0 V, f = 1 MHz
2
Min
Typ
Max
1
-1
±100
1
-1
2.4
-1.2
Unit
V
V
nA
uA
A
A
62
72
275
295
22
20
0.7
0.8
11
3.6
6.1
9
3.7
4.0
10
12
53
21
6
11
78
51
1122
130
82
1222
128
63
mΩ
mΩ
S
S
V
V
nC
nC
ns
ns
pF
pF
Publication Order Number:
DS_AM7510C_1A
Analog Power
AM7510C
0.18
10
0.16
9
TJ = 25°C
8
0.14
ID - Drain Current (A)
RDS(on) - On-Resistance(Ω)
Typical Electrical Characteristics - N-channel
3V
0.12
0.1
3.5V
0.08
0.06
4V,4.5V,6V,8V,10V
0.04
7
6
5
4
3
2
1
0.02
0
0
0
2
4
6
ID-Drain Current (A)
8
0
10
2
3
4
VGS - Gate-to-Source Voltage (V)
1. On-Resistance vs. Drain Current
2. Transfer Characteristics
10
0.3
TJ = 25°C
0.25
TJ = 25°C
ID = 3.8A
IS - Source Current (A)
RDS(on) - On-Resistance(Ω)
1
0.2
0.15
0.1
1
0.1
0.05
0.01
0
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
0
10
0.4
0.6
0.8
1
1.2
VSD - Source-to-Drain Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
4. Drain-to-Source Forward Voltage
5
1800
F = 1MHz
10V,8V,6V,4.5V,4V
4.5
4
1600
1400
3.5V
3.5
3
Capacitance (pf)
ID - Drain Current (A)
0.2
3V
2.5
2
1.5
1000
800
600
1
400
0.5
200
0
Ciss
1200
Coss
Crss
0
0
0.2
0.4
0.6
0
10
15
20
VDS-Drain-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
5. Output Characteristics
© Preliminary
5
6. Capacitance
3
Publication Order Number:
DS_AM7510C_1A
Analog Power
AM7510C
Typical Electrical Characteristics - N-channel
2.5
VDS = 50V
9
ID = 3.8A
8
RDS(on) - On-Resistance(Ω)
(Normalized)
VGS-Gate-to-Source Voltage (V)
10
7
6
5
4
3
2
2
1.5
1
1
0
0.5
0
5
10
15
20
-50
-25
Qg - Total Gate Charge (nC)
25
50
75
100
125
150
TJ -JunctionTemperature(°C)
7. Gate Charge
8. Normalized On-Resistance Vs
Junction Temperature
100
PEAK TRANSIENT POWER (W)
160
10 uS
100 uS
10
1 mS
ID Current (A)
0
10 mS
100 mS
1
1 SEC
10 SEC
100 SEC
0.1
DC
1
Idm limit
Limited by
RDS
0.01
0.1
1
10
100
140
120
100
80
60
40
20
0
0.001
1000
0.01
0.1
1
10
100
1000
VDS Drain to Source Voltage (V)
t1 TIME (SEC)
9. Safe Operating Area
10. Single Pulse Maximum Power Dissipation
1
D = 0.5
0.2
0.1
RθJA(t) = r(t) + RθJA
RθJA = 110°C /W
0.1
0.05
0.02
0.01
P(pk)
t1
t2
Single Pulse
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
© Preliminary
4
Publication Order Number:
DS_AM7510C_1A
Analog Power
AM7510C
0.5
10
0.45
9
0.4
8
0.35
ID - Drain Current (A)
RDS(on) - On-Resistance(Ω)
Typical Electrical Characteristics - P-channel
3.5V
0.3
4V
0.25
4.5V, 6V,8V,10V
0.2
0.15
TJ = 25°C
7
6
5
4
3
2
0.1
1
0.05
0
0
0
1
2
3
ID-Drain Current (A)
4
0
5
2
6
VGS - Gate-to-Source Voltage (V)
1. On-Resistance vs. Drain Current
2. Transfer Characteristics
10
0.8
TJ = 25°C
0.7
TJ = 25°C
ID = -2.0A
IS - Source Current (A)
RDS(on) - On-Resistance(Ω)
4
0.6
0.5
0.4
0.3
0.2
1
0.1
0.1
0.01
0
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
0
10
0.4
0.6
0.8
1
1.2
VSD - Source-to-Drain Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
4. Drain-to-Source Forward Voltage
1600
5
F = 1MHz
4.5
1400
10V,8V,6V,4.5V
4
4V
Ciss
1200
3.5V
3.5
Capacitance (pf)
ID - Drain Current (A)
0.2
3
2.5
2
1.5
1000
800
600
400
1
Coss
200
0.5
Crss
0
0
0
0.4
0.8
1.2
1.6
0
2
10
15
20
VDS-Drain-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
5. Output Characteristics
© Preliminary
5
6. Capacitance
5
Publication Order Number:
DS_AM7510C_1A
Analog Power
AM7510C
Typical Electrical Characteristics - P-channel
2.5
VDS = -50V
9
ID = -2.0A
8
RDS(on) - On-Resistance(Ω)
(Normalized)
VGS-Gate-to-Source Voltage (V)
10
7
6
5
4
3
2
2
1.5
1
1
0
0.5
0
5
10
15
20
-50
-25
Qg - Total Gate Charge (nC)
25
50
75
100
125
150
TJ -JunctionTemperature(°C)
7. Gate Charge
8. Normalized On-Resistance Vs
Junction Temperature
100
PEAK TRANSIENT POWER (W)
160
10 uS
100 uS
10
1 mS
ID Current (A)
0
10 mS
100 mS
1
1 SEC
10 SEC
100 SEC
0.1
DC
1
Idm limit
Limited by
RDS
140
120
100
80
60
40
20
0
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
1000
VDS Drain to Source Voltage (V)
t1 TIME (SEC)
9. Safe Operating Area
10. Single Pulse Maximum Power Dissipation
1
D = 0.5
0.2
0.1
RθJA(t) = r(t) + RθJA
RθJA = 110°C /W
0.1
0.05
0.02
0.01
P(pk)
t1
t2
Single Pulse
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 TIME (sec)
11. Normalized Thermal Transient Junction to Ambient
© Preliminary
6
Publication Order Number:
DS_AM7510C_1A
Analog Power
AM7510C
Package Information
© Preliminary
7
Publication Order Number:
DS_AM7510C_1A