Analog Power AM7510C N & P-Channel 100-V (D-S) MOSFET VDS (V) Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed 100 -100 Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits PRODUCT SUMMARY rDS(on) (mΩ) 62 @ VGS = 10V 72 @ VGS = 5.5V 275 @ VGS = -10V 295 @ VGS = -4.5V DFN5x6-8L ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Nch Limit Pch Limit VDS Drain-Source Voltage 100 -100 VGS Gate-Source Voltage ±20 ±20 TA=25°C 4.8 -2.5 ID Continuous Drain Current a TA=70°C 3.7 -2 IDM Pulsed Drain Current b 20 -15 IS 3 -2.7 Continuous Source Current (Diode Conduction) a T =25°C 2.1 2.1 A PD Power Dissipation a TA=70°C 1.3 1.3 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient a ID(A) 4.8 4.4 -2.5 -2.4 THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum 62.5 RθJA 110 Units V A A W °C Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM7510C_1A Analog Power AM7510C Electrical Characteristics Parameter Symbol Gate-Source Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-Source On-Resistance rDS(on) Forward Transconductance gfs Diode Forward Voltage VSD Total Gate Charge Gate-Source Charge Gate-Drain Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance © Preliminary Qg Qgs Qgd Qg Qgs Qgd td(on) tr td(off) tf td(on) tr td(off) tf Ciss Coss Crss Ciss Coss Crss Test Conditions Static VDS = VGS, ID = 250 uA (N-ch) VDS = VGS, ID = -250 uA (P-ch) VDS = 0 V, VGS = ±20 V VDS = 80 V, VGS = 0 V (N-ch) VDS = -80 V, VGS = 0 V (P-ch) VDS = 5 V, VGS = 10 V (N-ch) VDS = -5 V, VGS = -10 V (P-ch) VGS = 10 V, ID = 3.8 A (N-ch) VGS = 4.5 V, ID = 3.7 A (N-ch) VGS = -10 V, ID = -2 A (P-ch) VGS = -4.5 V, ID = -1.9 A (P-ch) VDS = 15 V, ID = 3.8 A (N-ch) VDS = -15 V, ID = -2.0 A (P-ch) IS = 1.5 A, VGS = 0 V (N-ch) IS = -1.3 A, VGS = 0 V (P-ch) Dynamic N - Channel VDS = 50 V, VGS = 4.5 V, ID = 3.8 A P - Channel VDS = -50 V, VGS = 4.5 V, ID = -2 A N - Channel VDD = 50 V, RL = 13.2 Ω, ID = 3.8 A, VGEN = 10 V, RGEN = 6 Ω P - Channel VDD = -50 V, RL = 25 Ω, ID = -2 A, VGEN = -10 V, RGEN = 6 Ω N - Channel VDS = 15 V, VGS = 0 V, f = 1 MHz P - Channel VDS = -15 V, VGS = 0 V, f = 1 MHz 2 Min Typ Max 1 -1 ±100 1 -1 2.4 -1.2 Unit V V nA uA A A 62 72 275 295 22 20 0.7 0.8 11 3.6 6.1 9 3.7 4.0 10 12 53 21 6 11 78 51 1122 130 82 1222 128 63 mΩ mΩ S S V V nC nC ns ns pF pF Publication Order Number: DS_AM7510C_1A Analog Power AM7510C 0.18 10 0.16 9 TJ = 25°C 8 0.14 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) Typical Electrical Characteristics - N-channel 3V 0.12 0.1 3.5V 0.08 0.06 4V,4.5V,6V,8V,10V 0.04 7 6 5 4 3 2 1 0.02 0 0 0 2 4 6 ID-Drain Current (A) 8 0 10 2 3 4 VGS - Gate-to-Source Voltage (V) 1. On-Resistance vs. Drain Current 2. Transfer Characteristics 10 0.3 TJ = 25°C 0.25 TJ = 25°C ID = 3.8A IS - Source Current (A) RDS(on) - On-Resistance(Ω) 1 0.2 0.15 0.1 1 0.1 0.05 0.01 0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 0 10 0.4 0.6 0.8 1 1.2 VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 5 1800 F = 1MHz 10V,8V,6V,4.5V,4V 4.5 4 1600 1400 3.5V 3.5 3 Capacitance (pf) ID - Drain Current (A) 0.2 3V 2.5 2 1.5 1000 800 600 1 400 0.5 200 0 Ciss 1200 Coss Crss 0 0 0.2 0.4 0.6 0 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 5 6. Capacitance 3 Publication Order Number: DS_AM7510C_1A Analog Power AM7510C Typical Electrical Characteristics - N-channel 2.5 VDS = 50V 9 ID = 3.8A 8 RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 7 6 5 4 3 2 2 1.5 1 1 0 0.5 0 5 10 15 20 -50 -25 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ -JunctionTemperature(°C) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 100 PEAK TRANSIENT POWER (W) 160 10 uS 100 uS 10 1 mS ID Current (A) 0 10 mS 100 mS 1 1 SEC 10 SEC 100 SEC 0.1 DC 1 Idm limit Limited by RDS 0.01 0.1 1 10 100 140 120 100 80 60 40 20 0 0.001 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.2 0.1 RθJA(t) = r(t) + RθJA RθJA = 110°C /W 0.1 0.05 0.02 0.01 P(pk) t1 t2 Single Pulse TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 4 Publication Order Number: DS_AM7510C_1A Analog Power AM7510C 0.5 10 0.45 9 0.4 8 0.35 ID - Drain Current (A) RDS(on) - On-Resistance(Ω) Typical Electrical Characteristics - P-channel 3.5V 0.3 4V 0.25 4.5V, 6V,8V,10V 0.2 0.15 TJ = 25°C 7 6 5 4 3 2 0.1 1 0.05 0 0 0 1 2 3 ID-Drain Current (A) 4 0 5 2 6 VGS - Gate-to-Source Voltage (V) 1. On-Resistance vs. Drain Current 2. Transfer Characteristics 10 0.8 TJ = 25°C 0.7 TJ = 25°C ID = -2.0A IS - Source Current (A) RDS(on) - On-Resistance(Ω) 4 0.6 0.5 0.4 0.3 0.2 1 0.1 0.1 0.01 0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 0 10 0.4 0.6 0.8 1 1.2 VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage 4. Drain-to-Source Forward Voltage 1600 5 F = 1MHz 4.5 1400 10V,8V,6V,4.5V 4 4V Ciss 1200 3.5V 3.5 Capacitance (pf) ID - Drain Current (A) 0.2 3 2.5 2 1.5 1000 800 600 400 1 Coss 200 0.5 Crss 0 0 0 0.4 0.8 1.2 1.6 0 2 10 15 20 VDS-Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 5. Output Characteristics © Preliminary 5 6. Capacitance 5 Publication Order Number: DS_AM7510C_1A Analog Power AM7510C Typical Electrical Characteristics - P-channel 2.5 VDS = -50V 9 ID = -2.0A 8 RDS(on) - On-Resistance(Ω) (Normalized) VGS-Gate-to-Source Voltage (V) 10 7 6 5 4 3 2 2 1.5 1 1 0 0.5 0 5 10 15 20 -50 -25 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ -JunctionTemperature(°C) 7. Gate Charge 8. Normalized On-Resistance Vs Junction Temperature 100 PEAK TRANSIENT POWER (W) 160 10 uS 100 uS 10 1 mS ID Current (A) 0 10 mS 100 mS 1 1 SEC 10 SEC 100 SEC 0.1 DC 1 Idm limit Limited by RDS 140 120 100 80 60 40 20 0 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 VDS Drain to Source Voltage (V) t1 TIME (SEC) 9. Safe Operating Area 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 0.2 0.1 RθJA(t) = r(t) + RθJA RθJA = 110°C /W 0.1 0.05 0.02 0.01 P(pk) t1 t2 Single Pulse TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient © Preliminary 6 Publication Order Number: DS_AM7510C_1A Analog Power AM7510C Package Information © Preliminary 7 Publication Order Number: DS_AM7510C_1A