SII S-80819CNMC

S-808xxC Series
www.sii-ic.com
SUPER-SMALL PACKAGE HIGH-PRECISION
VOLTAGE DETECTOR
Rev.6.1_00
© Seiko Instruments Inc., 2001-2011
The S-808xxC series is a series of high-precision voltage detectors developed using CMOS process. The
detection voltage is fixed internally with an accuracy of ±2.0%. Two output forms, Nch open-drain and CMOS
output, are available. Super-low current consumption and miniature package lineup can meet demand from the
portable device applications.
„ Features
• Super-low current consumption
•
•
•
•
•
•
1.3 μA typ. (detection voltage≤1.4 V, at VDD = 1.5 V)
0.8 μA typ. (detection voltage≥1.5 V, at VDD = 3.5 V)
High-precision detection voltage ±2.0%
Operating voltage range
0.65 V to 5.0 V (detection voltage≤1.4 V)
0.95 V to 10.0 V (detection voltage≥1.5 V)
Hysteresis characteristics
5% typ.
Detection voltage
0.8 V to 6.0 V (0.1 V step)
Output form
Nch open-drain output (Active Low)
CMOS output (Active Low)
Lead-free, Sn 100%, halogen-free*1
*1. Refer to “„ Product Name Structure” for details.
„ Applications
• Battery checkers
• Power failure detectors
• Power monitor for portable equipments such as pagers, calculators, electronic notebooks and remote
controllers.
• Constant voltage power monitor for cameras, video equipments and communication devices.
• Power monitor for microcomputers and reset for CPUs.
„ Packages
•
•
•
•
•
SC-82AB
SOT-23-5
SOT-89-3
SNT-4A
TO-92
Seiko Instruments Inc.
1
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.6.1_00
„ Block Diagrams
1. Nch Open-drain Output Products
VDD
−
OUT
+
*1
*1
VREF
VSS
*1. Parasitic diode
Figure 1
2. CMOS Output Products
VDD
*1
−
OUT
+
*1
*1
VREF
VSS
*1. Parasitic diode
Figure 2
2
Seiko Instruments Inc.
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.6.1_00
„ Product Name Structure
The detection voltage, output form and packages for S-808xxC Series can be selected at the user's request.
Refer to the “1. Product Name” for the construction of the product name, “2. Package” regarding the package
drawings and “3. Product Name List” for the full product names.
1. Product Name
1-1. SC-82AB, SOT-23-5, SOT-89-3, SNT-4A packages
S - 808xx
C
x
xx
-
xxx
xx
x
Environmental code
U: Lead-free (Sn 100%), halogen-free
G: Lead-free (for details, please contact our sales office)
IC direction in tape specifications*1
T2: SC-82AB, SOT-23-5, SOT-89-3
TF: SNT-4A
Product code*2
Package code
NB: SC-82AB
MC: SOT-23-5
UA: SOT-89-3
PF: SNT-4A
Output form
N: Nch open-drain output (Active Low)
L: CMOS output (Active Low)
Detection voltage value
08 to 60
(e.g. When the detection voltage is 0.8 V,
it is expressed as 08.)
*1. Refer to the tape specifications at the end of this book.
*2. Refer to the Table 1 and 3 in the “3. Product Name List”
Seiko Instruments Inc.
3
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.6.1_00
1-2. TO-92 package
S - 808xx
C
xY-x
2
-U
Environmental code
U: Lead-free (Sn 100%), halogen-free
Packing form
B: Bulk
Z: Tape and ammo
Package code
Y: TO-92
Output form
N: Nch open-drain output (Active Low)
L: CMOS output (Active Low)
Detection voltage value
15 to 60
(e.g. When the detection voltage is 1.5 V,
it is expressed as 15.)
2. Packages
Package name
SC-82AB
Package
NP004-A-P-SD
SOT-23-5
MP005-A-P-SD
SOT-89-3
UP003-A-P-SD
SNT-4A
PF004-A-P-SD
TO-92 (Bulk)
YS003-D-P-SD
TO-92 (Tape and ammo) YZ003-E-P-SD
4
Tape
NP004-A-C-SD
NP004-A-C-S1
MP005-A-C-SD
UP003-A-C-SD
PF004-A-C-SD
⎯
YZ003-E-C-SD
Drawing code
Reel
Zigzag
Land
NP004-A-R-SD
⎯
⎯
MP005-A-R-SD
UP003-A-R-SD
PF004-A-R-SD
⎯
⎯
⎯
⎯
⎯
⎯
YZ003-E-Z-SD
⎯
⎯
PF004-A-L-SD
⎯
⎯
Seiko Instruments Inc.
Rev.6.1_00
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
3. Product Name List
3-1. Nch Open-drain Output Products
Table 1 (1/2)
Detection
voltage range
0.8 V±2.0 %
0.9 V±2.0 %
1.0 V±2.0 %
1.1 V±2.0 %
1.2 V±2.0 %
1.3 V±2.0 %
1.4 V±2.0 %
1.5 V±2.0 %
1.6 V±2.0 %
1.7 V±2.0 %
1.8 V±2.0 %
1.9 V±2.0 %
2.0 V±2.0 %
2.1 V±2.0 %
2.2 V±2.0 %
2.3 V±2.0 %
2.4 V±2.0 %
2.4 V typ.
2.5 V±2.0 %
2.6 V±2.0 %
2.7 V±2.0 %
2.8 V±2.0 %
2.9 V±2.0 %
3.0 V±2.0 %
3.1 V±2.0 %
3.2 V±2.0 %
3.3 V±2.0 %
3.4 V±2.0 %
3.5 V±2.0 %
3.6 V±2.0 %
3.7 V±2.0 %
3.8 V±2.0 %
3.9 V±2.0 %
Hysteresis width
(Typ.)
0.034 V
0.044 V
0.054 V
0.064 V
0.073 V
0.083 V
0.093 V
0.075 V
0.080 V
0.085 V
0.090 V
0.095 V
0.100 V
0.105 V
0.110 V
0.115 V
0.120 V
4.4 ± 0.1 V*1
0.125 V
0.130 V
0.135 V
0.140 V
0.145 V
0.150 V
0.155 V
0.160 V
0.165 V
0.170 V
0.175 V
0.180 V
0.185 V
0.190 V
0.195 V
SC-82AB
SOT-23-5
SOT-89-3
S-80808CNNB-B9MT2x
S-80809CNNB-B9NT2x
S-80810CNNB-B9OT2x
S-80811CNNB-B9PT2x
S-80812CNNB-B9QT2x
S-80813CNNB-B9RT2x
S-80814CNNB-B9ST2x
S-80815CNNB-B8AT2x
S-80816CNNB-B8BT2x
S-80817CNNB-B8CT2x
S-80818CNNB-B8DT2x
S-80819CNNB-B8ET2x
S-80820CNNB-B8FT2x
S-80821CNNB-B8GT2x
S-80822CNNB-B8HT2x
S-80823CNNB-B8IT2x
S-80824CNNB-B8JT2x
⎯
S-80825CNNB-B8KT2x
S-80826CNNB-B8LT2x
S-80827CNNB-B8MT2x
S-80828CNNB-B8NT2x
S-80829CNNB-B8OT2x
S-80830CNNB-B8PT2x
S-80831CNNB-B8QT2x
S-80832CNNB-B8RT2x
S-80833CNNB-B8ST2x
S-80834CNNB-B8TT2x
S-80835CNNB-B8UT2x
S-80836CNNB-B8VT2x
S-80837CNNB-B8WT2x
S-80838CNNB-B8XT2x
S-80839CNNB-B8YT2x
⎯
⎯
⎯
⎯
⎯
⎯
⎯
S-80815CNMC-B8AT2x
S-80816CNMC-B8BT2x
S-80817CNMC-B8CT2x
S-80818CNMC-B8DT2x
S-80819CNMC-B8ET2x
S-80820CNMC-B8FT2x
S-80821CNMC-B8GT2x
S-80822CNMC-B8HT2x
S-80823CNMC-B8IT2x
S-80824CNMC-B8JT2x
⎯
S-80825CNMC-B8KT2x
S-80826CNMC-B8LT2x
S-80827CNMC-B8MT2x
S-80828CNMC-B8NT2x
S-80829CNMC-B8OT2x
S-80830CNMC-B8PT2x
S-80831CNMC-B8QT2x
S-80832CNMC-B8RT2x
S-80833CNMC-B8ST2x
S-80834CNMC-B8TT2x
S-80835CNMC-B8UT2x
S-80836CNMC-B8VT2x
S-80837CNMC-B8WT2x
S-80838CNMC-B8XT2x
S-80839CNMC-B8YT2x
⎯
⎯
⎯
⎯
⎯
⎯
⎯
S-80815CNUA-B8AT2x
S-80816CNUA-B8BT2x
S-80817CNUA-B8CT2x
S-80818CNUA-B8DT2x
S-80819CNUA-B8ET2x
S-80820CNUA-B8FT2x
S-80821CNUA-B8GT2x
S-80822CNUA-B8HT2x
S-80823CNUA-B8IT2x
S-80824CNUA-B8JT2x
S-80824KNUA-D2BT2x*2
S-80825CNUA-B8KT2x
S-80826CNUA-B8LT2x
S-80827CNUA-B8MT2x
S-80828CNUA-B8NT2x
S-80829CNUA-B8OT2x
S-80830CNUA-B8PT2x
S-80831CNUA-B8QT2x
S-80832CNUA-B8RT2x
S-80833CNUA-B8ST2x
S-80834CNUA-B8TT2x
S-80835CNUA-B8UT2x
S-80836CNUA-B8VT2x
S-80837CNUA-B8WT2x
S-80838CNUA-B8XT2x
S-80839CNUA-B8YT2x
Seiko Instruments Inc.
5
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.6.1_00
Table 1 (2/2)
Detection
Hysteresis width
SC-82AB
SOT-23-5
SOT-89-3
voltage range
(Typ.)
0.200 V
S-80840CNNB-B8ZT2x
S-80840CNMC-B8ZT2x
S-80840CNUA-B8ZT2x
4.0 V±2.0 %
0.205 V
S-80841CNNB-B82T2x
S-80841CNMC-B82T2x
S-80841CNUA-B82T2x
4.1 V±2.0 %
0.210 V
S-80842CNNB-B83T2x
S-80842CNMC-B83T2x
S-80842CNUA-B83T2x
4.2 V±2.0 %
0.215 V
S-80843CNNB-B84T2x
S-80843CNMC-B84T2x
S-80843CNUA-B84T2x
4.3 V±2.0 %
0.220 V
S-80844CNNB-B85T2x
S-80844CNMC-B85T2x
S-80844CNUA-B85T2x
4.4 V±2.0 %
0.225 V
S-80845CNNB-B86T2x
S-80845CNMC-B86T2x
S-80845CNUA-B86T2x
4.5 V±2.0 %
0.230
V
S-80846CNNB-B87T2x
S-80846CNMC-B87T2x
S-80846CNUA-B87T2x
4.6 V±2.0 %
0.10 V max.
S-80846KNUA-D2CT2x*3
4.6 V± 0.10 V
⎯
⎯
0.235 V
S-80847CNNB-B88T2x
S-80847CNMC-B88T2x
S-80847CNUA-B88T2x
4.7 V±2.0 %
0.240 V
S-80848CNNB-B89T2x
S-80848CNMC-B89T2x
S-80848CNUA-B89T2x
4.8 V±2.0 %
0.245 V
S-80849CNNB-B9AT2x
S-80849CNMC-B9AT2x
S-80849CNUA-B9AT2x
4.9 V±2.0 %
0.250 V
S-80850CNNB-B9BT2x
S-80850CNMC-B9BT2x
S-80850CNUA-B9BT2x
5.0 V±2.0 %
0.255 V
S-80851CNNB-B9CT2x
S-80851CNMC-B9CT2x
S-80851CNUA-B9CT2x
5.1 V±2.0 %
0.260 V
S-80852CNNB-B9DT2x
S-80852CNMC-B9DT2x
S-80852CNUA-B9DT2x
5.2 V±2.0 %
0.265 V
S-80853CNNB-B9ET2x
S-80853CNMC-B9ET2x
S-80853CNUA-B9ET2x
5.3 V±2.0 %
0.270 V
S-80854CNNB-B9FT2x
S-80854CNMC-B9FT2x
S-80854CNUA-B9FT2x
5.4 V±2.0 %
0.275 V
S-80855CNNB-B9GT2x
S-80855CNMC-B9GT2x
S-80855CNUA-B9GT2x
5.5 V±2.0 %
0.280 V
S-80856CNNB-B9HT2x
S-80856CNMC-B9HT2x
S-80856CNUA-B9HT2x
5.6 V±2.0 %
0.285 V
S-80857CNNB-B9IT2x
S-80857CNMC-B9IT2x
S-80857CNUA-B9IT2x
5.7 V±2.0 %
0.290 V
S-80858CNNB-B9JT2x
S-80858CNMC-B9JT2x
S-80858CNUA-B9JT2x
5.8 V±2.0 %
0.295 V
S-80859CNNB-B9KT2x
S-80859CNMC-B9KT2x
S-80859CNUA-B9KT2x
5.9 V±2.0 %
0.300 V
S-80860CNNB-B9LT2x
S-80860CNMC-B9LT2x
S-80860CNUA-B9LT2x
6.0 V±2.0 %
*1. Describes the release voltage.
*2. Refer to the Table 18 in “„ Electricala Characteristics for Customized Products” for electrical characteristics.
*3. Refer to the Table 20 in “„ Electricala Characteristics for Customized Products” for electrical characteristics
Remark 1. x: G or U
2. Please select products of environmental code = U for Sn 100%, halogen-free products.
6
Seiko Instruments Inc.
Rev.6.1_00
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Table 2 (1/2)
Detection
voltage range
0.8 V±2.0 %
0.9 V±2.0 %
1.0 V±2.0 %
1.1 V±2.0 %
1.2 V±2.0 %
1.3 V±2.0 %
1.4 V±2.0 %
1.5 V±2.0 %
1.6 V±2.0 %
1.7 V±2.0 %
1.8 V±2.0 %
1.9 V±2.0 %
2.0 V±2.0 %
2.1 V±2.0 %
2.2 V±2.0 %
2.3 V±2.0 %
2.4 V±2.0 %
2.4 V typ.
2.5 V±2.0 %
2.6 V±2.0 %
2.7 V±2.0 %
2.8 V±2.0 %
2.9 V±2.0 %
3.0 V±2.0 %
3.1 V±2.0 %
3.2 V±2.0 %
3.3 V±2.0 %
3.4 V±2.0 %
3.5 V±2.0 %
3.6 V±2.0 %
3.7 V±2.0 %
3.8 V±2.0 %
3.9 V±2.0 %
4.0 V±2.0 %
4.1 V±2.0 %
4.2 V±2.0 %
4.3 V±2.0 %
4.4 V±2.0 %
4.5 V±2.0 %
4.6 V±2.0 %
4.6 V±0.10 V
4.7 V±2.0 %
4.8 V±2.0 %
4.9 V±2.0 %
5.0 V±2.0 %
5.1 V±2.0 %
Hysteresis width
(Typ.)
0.034 V
0.044 V
0.054 V
0.064 V
0.073 V
0.083 V
0.093 V
0.075 V
0.080 V
0.085 V
0.090 V
0.095 V
0.100 V
0.105 V
0.110 V
0.115 V
0.120 V
4.4 ± 0.1 V*2
0.125 V
0.130 V
0.135 V
0.140 V
0.145 V
0.150 V
0.155 V
0.160 V
0.165 V
0.170 V
0.175 V
0.180 V
0.185 V
0.190 V
0.195 V
0.200 V
0.205 V
0.210 V
0.215 V
0.220 V
0.225 V
0.230 V
0.10 V max.
0.235 V
0.240 V
0.245 V
0.250 V
0.255 V
SNT-4A
TO-92*1
S-80808CNPF-B9MTFx
S-80809CNPF-B9NTFx
S-80810CNPF-B9OTFx
S-80811CNPF-B9PTFx
S-80812CNPF-B9QTFx
S-80813CNPF-B9RTFx
S-80814CNPF-B9STFx
S-80815CNPF-B8ATFx
S-80816CNPF-B8BTFx
S-80817CNPF-B8CTFx
S-80818CNPF-B8DTFx
S-80819CNPF-B8ETFx
S-80820CNPF-B8FTFx
S-80821CNPF-B8GTFx
S-80822CNPF-B8HTFx
S-80823CNPF-B8ITFx
S-80824CNPF-B8JTFx
⎯
S-80825CNPF-B8KTFx
S-80826CNPF-B8LTFx
S-80827CNPF-B8MTFx
S-80828CNPF-B8NTFx
S-80829CNPF-B8OTFx
S-80830CNPF-B8PTFx
S-80831CNPF-B8QTFx
S-80832CNPF-B8RTFx
S-80833CNPF-B8STFx
S-80834CNPF-B8TTFx
S-80835CNPF-B8UTFx
S-80836CNPF-B8VTFx
S-80837CNPF-B8WTFx
S-80838CNPF-B8XTFx
S-80839CNPF-B8YTFx
S-80840CNPF-B8ZTFx
S-80841CNPF-B82TFx
S-80842CNPF-B83TFx
S-80843CNPF-B84TFx
S-80844CNPF-B85TFx
S-80845CNPF-B86TFx
S-80846CNPF-B87TFx
⎯
S-80847CNPF-B88TFx
S-80848CNPF-B89TFx
S-80849CNPF-B9ATFx
S-80850CNPF-B9BTFx
S-80851CNPF-B9CTFx
⎯
⎯
⎯
⎯
⎯
⎯
⎯
S-80815CNY-n2-U
S-80816CNY-n2-U
S-80817CNY-n2-U
S-80818CNY-n2-U
S-80819CNY-n2-U
S-80820CNY-n2-U
S-80821CNY-n2-U
S-80822CNY-n2-U
S-80823CNY-n2-U
S-80824CNY-n2-U
S-80824KNY-n2-U*3
S-80825CNY-n2-U
S-80826CNY-n2-U
S-80827CNY-n2-U
S-80828CNY-n2-U
S-80829CNY-n2-U
S-80830CNY-n2-U
S-80831CNY-n2-U
S-80832CNY-n2-U
S-80833CNY-n2-U
S-80834CNY-n2-U
S-80835CNY-n2-U
S-80836CNY-n2-U
S-80837CNY-n2-U
S-80838CNY-n2-U
S-80839CNY-n2-U
S-80840CNY-n2-U
S-80841CNY-n2-U
S-80842CNY-n2-U
S-80843CNY-n2-U
S-80844CNY-n2-U
S-80845CNY-n2-U
S-80846CNY-n2-U
S-80846KNY-n2-U*4
S-80847CNY-n2-U
S-80848CNY-n2-U
S-80849CNY-n2-U
S-80850CNY-n2-U
S-80851CNY-n2-U
Seiko Instruments Inc.
7
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.6.1_00
Table 2 (2/2)
Detection
Hysteresis width
SNT-4A
TO-92*1
voltage range
(Typ.)
0.260 V
S-80852CNPF-B9DTFx
S-80852CNY-n2-U
5.2 V±2.0 %
0.265 V
S-80853CNPF-B9ETFx
S-80853CNY-n2-U
5.3 V±2.0 %
0.270 V
S-80854CNPF-B9FTFx
S-80854CNY-n2-U
5.4 V±2.0 %
0.275 V
S-80855CNPF-B9GTFx
S-80855CNY-n2-U
5.5 V±2.0 %
0.280 V
S-80856CNPF-B9HTFx
S-80856CNY-n2-U
5.6 V±2.0 %
0.285 V
S-80857CNPF-B9ITFx
S-80857CNY-n2-U
5.7 V±2.0 %
0.290 V
S-80858CNPF-B9JTFx
S-80858CNY-n2-U
5.8 V±2.0 %
0.295 V
S-80859CNPF-B9KTFx
S-80859CNY-n2-U
5.9 V±2.0 %
0.300 V
S-80860CNPF-B9LTFx
S-80860CNY-n2-U
6.0 V±2.0 %
*1. n changes according to the packing form in TO-92. B: Bulk, Z: Tape and ammo
*2. Describes the release voltage.
*3. Refer to the Table 18 in “„ Electricala Characteristics for Customized Products” for electrical characteristics.
*4. Refer to the Table 20 in “„ Electricala Characteristics for Customized Products” for electrical characteristics.
Remark 1. x: G or U
2. Please select products of environmental code = U for Sn 100%, halogen-free products.
8
Seiko Instruments Inc.
Rev.6.1_00
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
3-2. CMOS Output Products
Table 3 (1/2)
Detection
voltage range
0.8 V±2.0 %
0.9 V±2.0 %
1.0 V±2.0 %
1.1 V±2.0 %
1.2 V±2.0 %
1.3 V±2.0 %
1.4 V±2.0 %
1.5 V±2.0 %
1.6 V±2.0 %
1.7 V±2.0 %
1.8 V±2.0 %
1.9 V±2.0 %
2.0 V±2.0 %
2.1 V±2.0 %
2.2 V±2.0 %
2.3 V±2.0 %
2.4 V±2.0 %
2.5 V±2.0 %
2.6 V±2.0 %
2.7 V±2.0 %
2.8 V±2.0 %
2.9 V±2.0 %
3.0 V±2.0 %
3.1 V±2.0 %
3.2 V±2.0 %
3.3 V±2.0 %
3.4 V±2.0 %
3.5 V±2.0 %
3.6 V±2.0 %
3.7 V±2.0 %
3.8 V±2.0 %
3.9 V±2.0 %
4.0 V±2.0 %
4.1 V±2.0 %
4.2 V±2.0 %
4.3 V±2.0 %
4.4 V±2.0 %
4.45 V typ.
4.5 V±2.0 %
4.6 V±2.0 %
4.7 V±2.0 %
4.8 V±2.0 %
4.9 V±2.0 %
5.0 V±2.0 %
5.1 V±2.0 %
Hysteresis width
(Typ.)
0.034 V
0.044 V
0.054 V
0.064 V
0.073 V
0.083 V
0.093 V
0.075 V
0.080 V
0.085 V
0.090 V
0.095 V
0.100 V
0.105 V
0.110 V
0.115 V
0.120 V
0.125 V
0.130 V
0.135 V
0.140 V
0.145 V
0.150 V
0.155 V
0.160 V
0.165 V
0.170 V
0.175 V
0.180 V
0.185 V
0.190 V
0.195 V
0.200 V
0.205 V
0.210 V
0.215 V
0.220 V
4.70 V max.*1
0.225 V
0.230 V
0.235 V
0.240 V
0.245 V
0.250 V
0.255 V
SC-82AB
SOT-23-5
SOT-89-3
S-80808CLNB-B7MT2x
S-80809CLNB-B7NT2x
S-80810CLNB-B7OT2x
S-80811CLNB-B7PT2x
S-80812CLNB-B7QT2x
S-80813CLNB-B7RT2x
S-80814CLNB-B7ST2x
S-80815CLNB-B6AT2x
S-80816CLNB-B6BT2x
S-80817CLNB-B6CT2x
S-80818CLNB-B6DT2x
S-80819CLNB-B6ET2x
S-80820CLNB-B6FT2x
S-80821CLNB-B6GT2x
S-80822CLNB-B6HT2x
S-80823CLNB-B6IT2x
S-80824CLNB-B6JT2x
S-80825CLNB-B6KT2x
S-80826CLNB-B6LT2x
S-80827CLNB-B6MT2x
S-80828CLNB-B6NT2x
S-80829CLNB-B6OT2x
S-80830CLNB-B6PT2x
S-80831CLNB-B6QT2x
S-80832CLNB-B6RT2x
S-80833CLNB-B6ST2x
S-80834CLNB-B6TT2x
S-80835CLNB-B6UT2x
S-80836CLNB-B6VT2x
S-80837CLNB-B6WT2x
S-80838CLNB-B6XT2x
S-80839CLNB-B6YT2x
S-80840CLNB-B6ZT2x
S-80841CLNB-B62T2x
S-80842CLNB-B63T2x
S-80843CLNB-B64T2x
S-80844CLNB-B65T2x
⎯
S-80845CLNB-B66T2x
S-80846CLNB-B67T2x
S-80847CLNB-B68T2x
S-80848CLNB-B69T2x
S-80849CLNB-B7AT2x
S-80850CLNB-B7BT2x
S-80851CLNB-B7CT2x
⎯
⎯
⎯
⎯
⎯
⎯
⎯
S-80815CLMC-B6AT2x
S-80816CLMC-B6BT2x
S-80817CLMC-B6CT2x
S-80818CLMC-B6DT2x
S-80819CLMC-B6ET2x
S-80820CLMC-B6FT2x
S-80821CLMC-B6GT2x
S-80822CLMC-B6HT2x
S-80823CLMC-B6IT2x
S-80824CLMC-B6JT2x
S-80825CLMC-B6KT2x
S-80826CLMC-B6LT2x
S-80827CLMC-B6MT2x
S-80828CLMC-B6NT2x
S-80829CLMC-B6OT2x
S-80830CLMC-B6PT2x
S-80831CLMC-B6QT2x
S-80832CLMC-B6RT2x
S-80833CLMC-B6ST2x
S-80834CLMC-B6TT2x
S-80835CLMC-B6UT2x
S-80836CLMC-B6VT2x
S-80837CLMC-B6WT2x
S-80838CLMC-B6XT2x
S-80839CLMC-B6YT2x
S-80840CLMC-B6ZT2x
S-80841CLMC-B62T2x
S-80842CLMC-B63T2x
S-80843CLMC-B64T2x
S-80844CLMC-B65T2x
⎯
S-80845CLMC-B66T2x
S-80846CLMC-B67T2x
S-80847CLMC-B68T2x
S-80848CLMC-B69T2x
S-80849CLMC-B7AT2x
S-80850CLMC-B7BT2x
S-80851CLMC-B7CT2x
⎯
⎯
⎯
⎯
⎯
⎯
⎯
S-80815CLUA-B6AT2x
S-80816CLUA-B6BT2x
S-80817CLUA-B6CT2x
S-80818CLUA-B6DT2x
S-80819CLUA-B6ET2x
S-80820CLUA-B6FT2x
S-80821CLUA-B6GT2x
S-80822CLUA-B6HT2x
S-80823CLUA-B6IT2x
S-80824CLUA-B6JT2x
S-80825CLUA-B6KT2x
S-80826CLUA-B6LT2x
S-80827CLUA-B6MT2x
S-80828CLUA-B6NT2x
S-80829CLUA-B6OT2x
S-80830CLUA-B6PT2x
S-80831CLUA-B6QT2x
S-80832CLUA-B6RT2x
S-80833CLUA-B6ST2x
S-80834CLUA-B6TT2x
S-80835CLUA-B6UT2x
S-80836CLUA-B6VT2x
S-80837CLUA-B6WT2x
S-80838CLUA-B6XT2x
S-80839CLUA-B6YT2x
S-80840CLUA-B6ZT2x
S-80841CLUA-B62T2x
S-80842CLUA-B63T2x
S-80843CLUA-B64T2x
S-80844CLUA-B65T2x
S-80844KLUA-D2AT2x*2
S-80845CLUA-B66T2x
S-80846CLUA-B67T2x
S-80847CLUA-B68T2x
S-80848CLUA-B69T2x
S-80849CLUA-B7AT2x
S-80850CLUA-B7BT2x
S-80851CLUA-B7CT2x
Seiko Instruments Inc.
9
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.6.1_00
Table 3 (2/2)
Detection
Hysteresis width
SC-82AB
SOT-23-5
SOT-89-3
voltage range
(Typ.)
0.260 V
S-80852CLNB-B7DT2x
S-80852CLMC-B7DT2x
S-80852CLUA-B7DT2x
5.2 V±2.0 %
0.265 V
S-80853CLNB-B7ET2x
S-80853CLMC-B7ET2x
S-80853CLUA-B7ET2x
5.3 V±2.0 %
0.270 V
S-80854CLNB-B7FT2x
S-80854CLMC-B7FT2x
S-80854CLUA-B7FT2x
5.4 V±2.0 %
0.275 V
S-80855CLNB-B7GT2x
S-80855CLMC-B7GT2x
S-80855CLUA-B7GT2x
5.5 V±2.0 %
0.280 V
S-80856CLNB-B7HT2x
S-80856CLMC-B7HT2x
S-80856CLUA-B7HT2x
5.6 V±2.0 %
0.285
V
S-80857CLNB-B7IT2x
S-80857CLMC-B7IT2x
S-80857CLUA-B7IT2x
5.7 V±2.0 %
0.290 V
S-80858CLNB-B7JT2x
S-80858CLMC-B7JT2x
S-80858CLUA-B7JT2x
5.8 V±2.0 %
0.295 V
S-80859CLNB-B7KT2x
S-80859CLMC-B7KT2x
S-80859CLUA-B7KT2x
5.9 V±2.0 %
0.300 V
S-80860CLNB-B7LT2x
S-80860CLMC-B7LT2x
S-80860CLUA-B7LT2x
6.0 V±2.0 %
*1. Describes the release voltage.
*2. Refer to the Table 19 in “„ Electricala Characteristics for Customized Products” for electrical characteristics.
Remark 1. x: G or U
2. Please select products of environmental code = U for Sn 100%, halogen-free products.
Table 4 (1/2)
Detection
voltage range
0.8 V±2.0 %
0.9 V±2.0 %
1.0 V±2.0 %
1.1 V±2.0 %
1.2 V±2.0 %
1.3 V±2.0 %
1.4 V±2.0 %
1.5 V±2.0 %
1.6 V±2.0 %
1.7 V±2.0 %
1.8 V±2.0 %
1.9 V±2.0 %
2.0 V±2.0 %
2.1 V±2.0 %
2.2 V±2.0 %
2.3 V±2.0 %
2.4 V±2.0 %
2.5 V±2.0 %
2.6 V±2.0 %
2.7 V±2.0 %
2.8 V±2.0 %
2.9 V±2.0 %
3.0 V±2.0 %
3.1 V±2.0 %
3.2 V±2.0 %
3.3 V±2.0 %
3.4 V±2.0 %
3.5 V±2.0 %
3.6 V±2.0 %
3.7 V±2.0 %
3.8 V±2.0 %
10
Hysteresis width
(Typ.)
0.034 V
0.044 V
0.054 V
0.064 V
0.073 V
0.083 V
0.093 V
0.075 V
0.080 V
0.085 V
0.090 V
0.095 V
0.100 V
0.105 V
0.110 V
0.115 V
0.120 V
0.125 V
0.130 V
0.135 V
0.140 V
0.145 V
0.150 V
0.155 V
0.160 V
0.165 V
0.170 V
0.175 V
0.180 V
0.185 V
0.190 V
SNT-4A
TO-92*1
S-80808CLPF-B7MTFx
S-80809CLPF-B7NTFx
S-80810CLPF-B7OTFx
S-80811CLPF-B7PTFx
S-80812CLPF-B7QTFx
S-80813CLPF-B7RTFx
S-80814CLPF-B7STFx
S-80815CLPF-B6ATFx
S-80816CLPF-B6BTFx
S-80817CLPF-B6CTFx
S-80818CLPF-B6DTFx
S-80819CLPF-B6ETFx
S-80820CLPF-B6FTFx
S-80821CLPF-B6GTFx
S-80822CLPF-B6HTFx
S-80823CLPF-B6ITFx
S-80824CLPF-B6JTFx
S-80825CLPF-B6KTFx
S-80826CLPF-B6LTFx
S-80827CLPF-B6MTFx
S-80828CLPF-B6NTFx
S-80829CLPF-B6OTFx
S-80830CLPF-B6PTFx
S-80831CLPF-B6QTFx
S-80832CLPF-B6RTFx
S-80833CLPF-B6STFx
S-80834CLPF-B6TTFx
S-80835CLPF-B6UTFx
S-80836CLPF-B6VTFx
S-80837CLPF-B6WTFx
S-80838CLPF-B6XTFx
⎯
⎯
⎯
⎯
⎯
⎯
⎯
S-80815CLY-n2-U
S-80816CLY-n2-U
S-80817CLY-n2-U
S-80818CLY-n2-U
S-80819CLY-n2-U
S-80820CLY-n2-U
S-80821CLY-n2-U
S-80822CLY-n2-U
S-80823CLY-n2-U
S-80824CLY-n2-U
S-80825CLY-n2-U
S-80826CLY-n2-U
S-80827CLY-n2-U
S-80828CLY-n2-U
S-80829CLY-n2-U
S-80830CLY-n2-U
S-80831CLY-n2-U
S-80832CLY-n2-U
S-80833CLY-n2-U
S-80834CLY-n2-U
S-80835CLY-n2-U
S-80836CLY-n2-U
S-80837CLY-n2-U
S-80838CLY-n2-U
Seiko Instruments Inc.
Rev.6.1_00
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Table 4 (2/2)
Detection
Hysteresis width
SNT-4A
TO-92*1
voltage range
(Typ.)
0.195 V
S-80839CLPF-B6YTFx
S-80839CLY-n2-U
3.9 V±2.0 %
0.200 V
S-80840CLPF-B6ZTFx
S-80840CLY-n2-U
4.0 V±2.0 %
0.205 V
S-80841CLPF-B62TFx
S-80841CLY-n2-U
4.1 V±2.0 %
0.210 V
S-80842CLPF-B63TFx
S-80842CLY-n2-U
4.2 V±2.0 %
0.215 V
S-80843CLPF-B64TFx
S-80843CLY-n2-U
4.3 V±2.0 %
0.220 V
S-80844CLPF-B65TFx
S-80844CLY-n2-U
4.4 V±2.0 %
*2
S-80844KLY-n2-U*3
4.45 V typ.
4.70 V max.
⎯
0.225 V
S-80845CLPF-B66TFx
S-80845CLY-n2-U
4.5 V±2.0 %
0.230 V
S-80846CLPF-B67TFx
S-80846CLY-n2-U
4.6 V±2.0 %
0.235 V
S-80847CLPF-B68TFx
S-80847CLY-n2-U
4.7 V±2.0 %
0.240 V
S-80848CLPF-B69TFx
S-80848CLY-n2-U
4.8 V±2.0 %
0.245 V
S-80849CLPF-B7ATFx
S-80849CLY-n2-U
4.9 V±2.0 %
0.250 V
S-80850CLPF-B7BTFx
S-80850CLY-n2-U
5.0 V±2.0 %
0.255 V
S-80851CLPF-B7CTFx
S-80851CLY-n2-U
5.1 V±2.0 %
0.260 V
S-80852CLPF-B7DTFx
S-80852CLY-n2-U
5.2 V±2.0 %
0.265 V
S-80853CLPF-B7ETFx
S-80853CLY-n2-U
5.3 V±2.0 %
0.270 V
S-80854CLPF-B7FTFx
S-80854CLY-n2-U
5.4 V±2.0 %
0.275 V
S-80855CLPF-B7GTFx
S-80855CLY-n2-U
5.5 V±2.0 %
0.280 V
S-80856CLPF-B7HTFx
S-80856CLY-n2-U
5.6 V±2.0 %
0.285 V
S-80857CLPF-B7ITFx
S-80857CLY-n2-U
5.7 V±2.0 %
0.290 V
S-80858CLPF-B7JTFx
S-80858CLY-n2-U
5.8 V±2.0 %
0.295 V
S-80859CLPF-B7KTFx
S-80859CLY-n2-U
5.9 V±2.0 %
0.300 V
S-80860CLPF-B7LTFx
S-80860CLY-n2-U
6.0 V±2.0 %
*1. n changes according to the packing form in TO-92. B: Bulk, Z: Tape and ammo
*2. Describes the release voltage.
*3. Refer to the Table 19 in “„ Electricala Characteristics for Customized Products” for electrical characteristics.
Remark 1. x: G or U
2. Please select products of environmental code = U for Sn 100%, halogen-free products.
Seiko Instruments Inc.
11
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.6.1_00
„ Output Forms
1. Output Forms in S-808xxC Series
Table 5
Nch open-drain output products
(Active Low)
“N” is the last letter of the product name.
e.g. S-80815CN
S-808xxC Series
CMOS output products
(Active Low)
“L” is the last letter of the product name.
e.g. S-80815CL
2. Output Forms and Their Usage
Table 6
Usage
Nch open-drain output products CMOS output products
(Active Low)
(Active Low)
Different power supplies
Yes
No
Active Low reset for CPUs
Yes
Yes
Active High reset for CPUs
No
No
Detection voltage change by resistor divider
Yes
No
• Example for two power supplies
VDD1
VDD2
V/D
Nch
VSS
OUT
CPU
• Example for one power supply
VDD
VDD
V/D
CMOS OUT
CPU
VSS
VSS
Figure 3
12
V/D
Nch
Seiko Instruments Inc.
OUT
CPU
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.6.1_00
„ Pin Configurations
Table 7
SC-82AB
Top view
4
3
1
Pin No.
Symbol
Description
1
OUT
Voltage detection output pin
2
VDD
Voltage input pin
3
NC*1
No connection
4
VSS
GND pin
*1. The NC pin is electrically open.
The NC pin can be connected to VDD or VSS.
2
Figure 4
Table 8
SOT-23-5
Top view
5
1
Pin No.
Symbol
Description
1
OUT
Voltage detection output pin
2
VDD
Voltage input pin
3
VSS
GND pin
4
NC*1
No connection
5
NC*1
No connection
*1. The NC pin is electrically open.
The NC pin can be connected to VDD or VSS.
4
2
3
Figure 5
Table 9
SOT-89-3
Top view
1
2
Pin No.
1
2
3
Symbol
OUT
VDD
VSS
Description
Voltage detection output pin
Voltage input pin
GND pin
3
Figure 6
Table10
SNT-4A
Top view
1
4
2
3
Pin No.
Symbol
Description
1
OUT
Voltage detection output pin
2
VSS
GND pin
3
NC*1
No connection
4
VDD
Voltage input pin
*1. The NC pin is electrically open.
The NC pin can be connected to VDD or VSS.
Figure 7
Seiko Instruments Inc.
13
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
TO-92
Bottom view
1 2 3
Table 11
Pin No.
1
2
3
Figure 8
14
Rev.6.1_00
Seiko Instruments Inc.
Symbol
OUT
VDD
VSS
Description
Voltage detection output pin
Voltage input pin
GND pin
Rev.6.1_00
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
„ Absolute Maximum Ratings
1. Detection Voltage Typ. 1.4 V or Less Products
Table 12
Item
Power supply voltage
Output voltage Nch open-drain output products
CMOS output products
Output current
Power
SC-82AB
dissipation
SNT-4A
Symbol
VDD−VSS
VOUT
IOUT
PD
Operating ambient temperature
Topr
Storage temperature
Tstg
*1. When mounted on board
[Mounted board]
(1) Board size: 114.3 mm × 76.2 mm × t1.6 mm
(2) Board name: JEDEC STANDARD51-7
(Ta = 25 °C unless otherwise specified)
Absolute maximum ratings
Unit
7
V
V
VSS−0.3 to VSS+7
V
VSS−0.3 to VDD+0.3
50
mA
150 (When not mounted on board) mW
350*1
mW
140 (When not mounted on board) mW
mW
300*1
−40 to +85
°C
−40 to +125
°C
Power Dissipation PD (mW)
Caution The absolute maximum ratings are rated values exceeding which the product could suffer
physical damage. These values must therefore not be exceeded under any conditions.
500
400
SC-82AB
300
200
SNT-4A
100
0
0
50
100
150
Ambient Temperature Ta (°C)
Figure 9 Power Dissipation of Package (When Mounted on Board)
Seiko Instruments Inc.
15
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.6.1_00
2. Detection Voltage Typ. 1.5 V or More Products
Table 13
Item
Power supply voltage
Output voltage Nch open-drain output products
CMOS output products
Output current
Power
SC-82AB
dissipation
SOT-23-5
Symbol
VDD−VSS
VOUT
IOUT
PD
SOT-89-3
SNT-4A
TO-92
Operating ambient temperature
Topr
Storage temperature
Tstg
*1. When mounted on board
[Mounted board]
(1) Board size: 114.3 mm × 76.2 mm × t1.6 mm
(2) Board name: JEDEC STANDARD51-7
(Ta = 25 °C unless otherwise specified)
Absolute maximum ratings
Unit
12
V
V
VSS−0.3 to VSS+12
V
VSS−0.3 to VDD+0.3
50
mA
150 (When not mounted on board) mW
350*1
mW
250 (When not mounted on board) mW
600*1
mW
500 (When not mounted on board) mW
1000*1
mW
140 (When not mounted on board) mW
300*1
mW
400 (When not mounted on board) mW
mW
800*1
−40 to +85
°C
−40 to +125
°C
Caution The absolute maximum ratings are rated values exceeding which the product could suffer
physical damage. These values must therefore not be exceeded under any conditions.
Power Dissipation PD (mW)
1200
SOT-89-3
1000
TO-92
800
SOT-23-5
600
SC-82AB
400
200
SNT-4A
0
0
50
100
150
Ambient Temperature Ta (°C)
Figure 10 Power Dissipation of Package (When Mounted on Board)
16
Seiko Instruments Inc.
Rev.6.1_00
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
„ Electrical Characteristics
1. Nch Open-drain Output Products
1-1. Detection Voltage Typ.1.4 V or Less Products
Table 14
Item
Symbol
Condition
Detection voltage*1
−VDET
⎯
Release voltage
+VDET
Hysteresis width
VHYS
Current consumption
ISS
Operating voltage
VDD
Output current
IOUT
Leakage current
ILEAK
Response time
tPLH
S-80808
S-80809
S-80810
S-80811
S-80812
S-80813
S-80814
S-80808
S-80809
S-80810
S-80811
S-80812
S-80813
S-80814
VDD = 1.5 V
VDD = 2.0 V
S-80808 to 09
S-80810 to 14
⎯
Output transistor,
Nch, VDS = 0.5 V, VDD = 0.7 V
Output transistor,
Nch, VDS = 5.0 V, VDD = 5.0 V
⎯
(Ta = 25 °C unless otherwise specified)
Test
Min.
Typ.
Max.
Unit
circuit
−VDET(S) −VDET(S) −VDET(S)
V
1
×0.98
×1.02
V
1
0.802
0.834
0.867
V
1
0.910
0.944
0.979
V
1
1.017
1.054
1.091
V
1
1.125
1.164
1.203
V
1
1.232
1.273
1.315
V
1
1.340
1.383
1.427
V
1
1.448
1.493
1.538
V
1
0.018
0.034
0.051
V
1
0.028
0.044
0.061
V
1
0.037
0.054
0.071
V
1
0.047
0.064
0.081
V
1
0.056
0.073
0.091
V
1
0.066
0.083
0.101
V
1
0.076
0.093
0.110
1.3
3.5
2
⎯
μA
1.3
3.5
2
⎯
μA
0.65
5.0
V
1
⎯
0.04
0.2
⎯
mA
3
⎯
⎯
60
nA
3
⎯
⎯
60
μs
1
Detection voltage
Δ − VDET
ppm/
1
temperature
Ta = −40 to +85 °C
±100
±350
⎯
°C
*2
Δ
Ta
•
−
V
DET
coefficient
*1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the
detection voltage range in Table 1 to 2.)
*2. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
Δ − VDET
[mV/ °C]*1 = − VDET(S) (Typ.) [V ]*2 × Δ − VDET [ppm/ °C]*3 ÷ 1000
ΔTa
ΔTa • − VDET
*1. Temperature change of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
Seiko Instruments Inc.
17
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.6.1_00
1-2. Detection Voltage Typ.1.5 V or More Products
Table 15
Item
Symbol
Condition
Detection voltage*1
−VDET
⎯
Hysteresis width
VHYS
⎯
Current consumption
ISS
Operating voltage
Output current
VDD
IOUT
Leakage current
ILEAK
VDD = 3.5 V
VDD = 4.5 V
VDD = 6.0 V
VDD = 7.5 V
S-80815 to 26
S-80827 to 39
S-80840 to 56
S-80857 to 60
⎯
Output transistor, VDD = 1.2 V
Nch, VDS = 0.5 V S-80815 to 60
VDD = 2.4 V
S-80827 to 60
Output transistor,
Nch, VDS = 10.0 V, VDD = 10.0 V
⎯
(Ta = 25 °C unless otherwise specified)
Test
Min.
Typ.
Max. Unit
circuit
−VDET(S) −VDET(S) −VDET(S)
V
1
×0.98
×1.02
−VDET
−VDET
−VDET
V
1
×0.03
×0.05
×0.08
0.8
2.4
2
⎯
μA
2
0.8
2.4
⎯
μA
2
0.9
2.7
⎯
μA
2
0.9
2.7
⎯
μA
0.95
10.0
V
1
⎯
0.59
1.36
⎯
mA
3
2.88
4.98
⎯
mA
3
⎯
⎯
100
nA
3
Response time
tPLH
60
1
⎯
⎯
μs
Detection voltage
Δ − VDET
ppm/
1
temperature
Ta = −40 to +85 °C
±100
±350
⎯
°C
ΔTa • − VDET
coefficient*2
*1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the
detection voltage range in Table 1 to 2.)
*2. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
Δ − VDET
[mV/ °C]*1 = − VDET(S) (Typ.) [V ]*2 × Δ − VDET [ppm/ °C]*3 ÷ 1000
ΔTa
ΔTa • − VDET
*1. Temperature change of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
18
Seiko Instruments Inc.
Rev.6.1_00
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
2. CMOS Output Products
2-1. Detection Voltage Typ.1.4 V or Less Products
Table 16
Item
Symbol
Detection voltage*1
−VDET
Release voltage
+VDET
Hysteresis width
VHYS
Current consumption
ISS
Operating voltage
Output current
VDD
IOUT
(Ta = 25 °C unless otherwise specified)
Test
Condition
Min.
Typ.
Max.
Unit
circuit
−VDET(S) −VDET(S) −VDET(S)
V
1
⎯
×0.98
×1.02
S-80808
0.802
0.834
0.867
V
1
S-80809
0.910
0.944
0.979
V
1
S-80810
1.017
1.054
1.091
V
1
S-80811
1.125
1.164
1.203
V
1
S-80812
1.232
1.273
1.315
V
1
S-80813
1.340
1.383
1.427
V
1
S-80814
1.448
1.493
1.538
V
1
S-80808
0.018
0.034
0.051
V
1
S-80809
0.028
0.044
0.061
V
1
S-80810
0.037
0.054
0.071
V
1
S-80811
0.047
0.064
0.081
V
1
S-80812
0.056
0.073
0.091
V
1
S-80813
0.066
0.083
0.101
V
1
S-80814
0.076
0.093
0.110
V
1
S-80808 to 09
1.3
3.5
2
⎯
μA
VDD = 1.5 V
S-80810 to 14
1.3
3.5
2
⎯
μA
VDD = 2.0 V
0.65
5.0
V
1
⎯
⎯
Output transistor,
0.04
0.2
mA
3
⎯
Nch, VDS = 0.5 V, VDD = 0.7 V
Output transistor,
2.9
5.8
mA
4
⎯
Pch, VDS = 2.1 V, VDD = 4.5 V
60
1
⎯
⎯
⎯
μs
Response time
tPLH
Detection voltage
Δ − VDET
ppm/
1
temperature
Ta = −40 to +85 °C
±100
±350
⎯
°C
*2
Δ
Ta
•
−
V
DET
coefficient
*1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the
detection voltage range in Table 3 to 4.)
*2. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
Δ − VDET
[mV/ °C]*1 = − VDET(S) (Typ.) [V ]*2 × Δ − VDET [ppm/ °C]*3 ÷ 1000
ΔTa
ΔTa • − VDET
*1. Temperature change of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
Seiko Instruments Inc.
19
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.6.1_00
2-2. Detection Voltage Typ.1.5 V or More Products
Table 17
Item
Symbol
Condition
Detection voltage*1
−VDET
⎯
Hysteresis width
VHYS
⎯
Current consumption
ISS
Operating voltage
Output current
VDD
IOUT
VDD = 3.5 V
VDD = 4.5 V
VDD = 6.0 V
VDD = 7.5 V
S-80815 to 26
S-80827 to 39
S-80840 to 56
S-80857 to 60
⎯
Output transistor, VDD = 1.2 V
Nch, VDS = 0.5 V S-80815 to 60
VDD = 2.4 V
S-80827 to 60
Output transistor, VDD = 4.8 V
Pch, VDS = 0.5 V S-80815 to 39
VDD = 6.0 V
S-80840 to 56
VDD = 8.4 V
S-80857 to 60
⎯
(Ta = 25 °C unless otherwise specified)
Test
Min.
Typ.
Max. Unit
circuit
−VDET(S) −VDET(S) −VDET(S)
V
1
×0.98
×1.02
−VDET
−VDET
−VDET
V
1
×0.03
×0.05
×0.08
0.8
2.4
2
⎯
μA
0.8
2.4
2
⎯
μA
0.9
2.7
2
⎯
μA
0.9
2.7
2
⎯
μA
0.95
10.0
V
1
⎯
0.59
1.36
⎯
mA
3
2.88
4.98
⎯
mA
3
1.43
2.39
⎯
mA
4
1.68
2.78
⎯
mA
4
2.08
3.42
⎯
mA
4
Response time
tPLH
60
1
⎯
⎯
μs
Detection voltage
Δ − VDET
ppm/
temperature
1
Ta = −40 to +85 °C
±100
±350
⎯
°C
*2
Δ
Ta
•
−
V
DET
coefficient
*1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the
detection voltage range in Table 3 to 4.)
*2. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
Δ − VDET
[mV/ °C]*1 = −VDET(S) (Typ.) [V ]*2 × Δ − VDET [ppm/ °C]*3 ÷ 1000
ΔTa
ΔTa • − VDET
*1. Temperature change of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
20
Seiko Instruments Inc.
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.6.1_00
„ Test Circuits
1.
VDD
*1
VDD
S-808xxC
V
R
100 kΩ
OUT
Series
V
VSS
*1. R is unnecessary for CMOS output products.
Figure 11
2.
A
VDD
VDD
S-808xxC
OUT
Series
VSS
Figure 12
3.
VDD
VDD
S-808xxC
V
OUT
A
Series
VSS
VDS
V
Figure 13
4.
VDS
VDD
VDD
S-808xxC
V
V
OUT
A
Series
VSS
Figure 14
Seiko Instruments Inc.
21
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.6.1_00
„ Timing Chart
1. Nch Open-drain Output Products
VDD
Release voltage (+VDET)
Detection voltage (−VDET)
Hysteresis width (VHYS)
Minimum operating voltage
VSS
R
100 kΩ
VDD
OUT
VSS
VDD
V
Output from the OUT pin
VSS
Figure 15
2. CMOS Output Products
VDD
Release voltage (+VDET)
Detection voltage (−VDET)
Hysteresis width (VHYS)
Minimum operating voltage
VSS
VDD
OUT
VSS
VDD
V
Output from the OUT pin
VSS
Remark For values of VDD less than minimum operating voltage, values of OUT terminal output is free in the
shaded region.
Figure 16
22
Seiko Instruments Inc.
Rev.6.1_00
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
„ Operation
1. Basic Operation: CMOS Output (Active Low)
1-1. When the power supply voltage (VDD) is higher than the release voltage (+VDET), the Nch transistor is
OFF and the Pch transistor is ON to provide VDD (high) at the output. Since the Nch transistor N1 in
(RB + RC) • VDD
Figure 17 is OFF, the comparator input voltage is
.
RA + RB + RC
1-2. When the VDD goes below +VDET, the output provides the VDD level, as long as the VDD remains above
the detection voltage −VDET. When the VDD falls below −VDET (point A in Figure 18), the Nch transistor
becomes ON, the Pch transistor becomes OFF, and the VSS level appears at the output. At this time
the Nch transistor N1 in Figure 17 becomes ON, the comparator input voltage is changed to
RB • VDD
.
RA + RB
1-3. When the VDD falls below the minimum operating voltage, the output becomes undefined, or goes to the
VDD when the output is pulled up to the VDD.
1-4. The VSS level appears when the VDD rises above the minimum operating voltage. The VSS level still
appears even when the VDD surpasses −VDET, as long as it does not exceed the release voltage +VDET.
1-5. When the VDD rises above +VDET (point B in Figure 18), the Nch transistor becomes OFF and the Pch
transistor becomes ON to provide VDD level at the output.
VDD
*1
−
RA
*1
Pch
OUT
+
*1
RB
Nch
VREF
RC
VSS
N1
*1. Parasiteic diode
Figure 17 Operation 1
Seiko Instruments Inc.
23
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
(1)
(2) (3)
(4)
B
A
Hysteresis width (VHYS)
Rev.6.1_00
(5)
VDD
Release voltage (+VDET)
Detection voltage (−VDET)
Minimum operating voltage
VSS
VDD
Output from the OUT pin
VSS
Figure 18 Operation 2
2. Other Characteristics
2-1. Temperature Characteristics of Detection Voltage
The shaded area in Figure 19 shows the temperature characteristics of the detection voltage.
−VDET [V]
+0.945 mV/°C
−VDET25
*1
−0.945 mV/°C
−40
25
85
Ta [°C]
*1. −VDET25 is an actual detection voltage value at 25°C.
Figure 19 Temperature Characteristics of Detection Voltage (Example for S-80827C)
2-2. Temperature Characteristics of Release Voltage
The temperature change
Δ + VDET
of the release voltage is calculated by using the temperature
ΔTa
Δ − VDET
of the detection voltage as follows:
ΔTa
Δ + VDET + VDET Δ − VDET
=
×
ΔTa
− VDET
ΔTa
The temperature change of the release voltage and the detection voltage have the same sign
consequently.
chnange
24
Seiko Instruments Inc.
Rev.6.1_00
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
2-3. Temperature Characteristics of Hysteresis Voltage
The temperature change of the hysteresis voltage is expressed as
Δ + VDET Δ − VDET
−
and is calculated
ΔTa
ΔTa
as follows:
Δ + VDET Δ − VDET
VHYS Δ − VDET
−
=
×
ΔTa
ΔTa
− VDET
ΔTa
„ Standard Circuit
R*1
100 kΩ
VDD
OUT
VSS
*1. R is unnecessary for CMOS output products.
Figure 20
Caution The above connection diagram and constants do not guarantee correct operation. Perform
sufficient evaluation using the actual application to set the constants.
„ Technical Terms
1. Detection Voltage (−VDET), Release Voltage (+VDET)
The detection voltage (−VDET) is a voltage at which the output turns to low. The detection voltage varies slightly
among products of the same specification. The variation of detection voltage between the specified minimum
(−VDET) Min. and the maximum (−VDET) Max. is called the detection voltage range (Refer to Figure 21).
Example: For the S-80815CN, the detection voltage lies in the range of 1.470≤(−VDET)≤1.530.
This means that some S-80815CNs have 1.470 V for −VDET and some have 1.530 V.
The release voltage (+VDET) is a voltage at which the output turns to high. The release voltage varies slightly
among products of the same specification. The variation of release voltages between the specified
minimum (+VDET) Min. and the maximum (+VDET) Max. is called the release voltage range (Refer to Figure
22). The range is calculed from the actual detection voltage (−VDET) of a product and is expressed by
−VDET×1.03≤+VDET≤−VDET ×1.08.
Example: For the S-80815CN, the release voltage lies in the range of 1.514≤(+VDET)≤1.652.
This means that some S-80815CNs have 1.514 V for +VDET and some have 1.652 V.
Seiko Instruments Inc.
25
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
VDD
Detection voltage
(−VDET) Max.
Detection voltage range
(−VDET) Min.
Rev.6.1_00
VDD
Release voltage
(+VDET) Max.
Release voltage range
(+VDET) Min.
OUT
OUT
Figure 21 Detection Voltage (CMOS Output Products)
Figure 22 Release Voltage (CMOS Output Products)
Remark Although the detection voltage and release voltage overlap in the range of 1.514 V to 1.530 V,
+VDET is always larger than −VDET.
2. Hysteresis Width (VHYS)
The hysteresis width is the voltage difference between the detection voltage and the release voltage (The
voltage at point B −The voltage at point A =VHYS in Figure 18). The existence of the hysteresis width
prevents malfunction caused by noise on input signal.
3. Through-type Current
The through-type current refers to the current that flows instantaneously at the time of detection and release
of a voltage detector. The through-type current is large in CMOS output products, small in Nch open-drain
output products.
4. Oscillation
In applications where a resistor is connected to the voltage detector input (Figure 23), taking a CMOS active
low product for example, the through-type current which is generated when the output goes from low to high
(release) causes a voltage drop equal to [through-type current]×[input resistance] across the resistor. When
the input voltage drops below the detection voltage (−VDET) as a result, the output voltage goes to low level.
In this state, the through-type current stops and its resultant voltage drop disappears, and the output goes
from low to high. A through-type current is again generated, a voltage drop appears, and repeating the
process finally induces oscillation.
VDD
RA
VIN
S-808xxCL
OUT
RB
VSS
Figure 23 An Example for Bad Implementation of Input Voltage Divider
26
Seiko Instruments Inc.
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.6.1_00
„ Electrical Characteristics for Customized Products
1. S-80824KNUA-D2BT2x, S-80824KNY-n2-U
Table 18
Item
Symbol
*1
Detection voltage
Release voltage
Current consumption
Operating voltage
Output current
−VDET
+VDET
ISS
VDD
IOUT
Leakage current
ILEAK
(Ta = 25 °C unless otherwise specified)
Test
Condition
Min.
Typ.
Max.
Unit
circuit
2.295 2.400*2 2.505
V
1
⎯
4.300
4.400 4.500
V
1
⎯
0.8
2.4
2
⎯
μA
VDD=6.0 V
0.95
10.0
V
1
⎯
⎯
0.24
mA
3
Output transistor, VDD = 0.95 V 0.03
⎯
Nch, VDS = 0.5 V VDD = 1.2 V
0.23
0.50
mA
3
⎯
Output transistor,
0.1
3
⎯
⎯
μA
Nch, VDD = 10.0 V, VDS = 10.0 V
60
1
⎯
⎯
⎯
μs
Response time
tPLH
Detection voltage
Δ − VDET
1
temperature
Ta = −40 to 85 °C
±100
±350 ppm/°C
⎯
ΔTa • − VDET
coefficient*3
*1. −VDET: Actual detection voltage value
*2. Specified detection voltage value (−VDET(S))
*3. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
Δ − VDET
[mV/ °C]*1 = −VDET(S) (Typ.) [V ]*2 × Δ − VDET [ppm/ °C]*3 ÷ 1000
ΔTa
ΔTa • − VDET
*1. Temperature change of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
Seiko Instruments Inc.
27
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.6.1_00
2. S-80844KLUA-D2AT2x, S-80844KLY-n2-U
Table 19
Item
Symbol
*1
Detection voltage
Release voltage
Current consumption
Operating voltage
Output current
−VDET
+VDET
ISS
VDD
IOUT
(Ta = 25 °C unless otherwise specified)
Test
Condition
Min.
Typ.
Max.
Unit
circuit
4.295 4.450*2 4.605
V
1
⎯
4.700
V
1
⎯
⎯
⎯
1.0
3.0
2
⎯
μA
VDD = 6.0 V
0.95
10.0
V
1
⎯
⎯
0.50
mA
3
Output transistor, VDD = 1.2 V 0.23
⎯
Nch, VDS = 0.5 V VDD = 2.4 V 1.60
3.70
mA
3
⎯
Output transistor,
0.62
mA
4
⎯
VDD = 4.8 V 0.36
Pch, VDS = 0.5 V
60
1
⎯
⎯
⎯
μs
Response time
tPLH
Detection voltage
Δ − VDET
1
temperature
Ta = −40 to 85 °C
±100
±350 ppm/°C
⎯
ΔTa • − VDET
coefficient*3
*1. −VDET: Actual detection voltage value
*2. Specified detection voltage value (−VDET(S))
*3. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
Δ − VDET
[mV/ °C]*1 = − VDET(S) (Typ.) [V ]*2 × Δ − VDET [ppm/ °C]*3 ÷ 1000
ΔTa
ΔTa • − VDET
*1. Temperature change of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
28
Seiko Instruments Inc.
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.6.1_00
3. S-80846KNUA-D2CT2x, S-80846KNY-n2-U
Table 20
Item
Symbol
Condition
Detection voltage
Hysteresis width
Current consumption
Operating voltage
Output current
−VDET
VHYS
ISS
VDD
IOUT
Leakage current
ILEAK
Response time
Detection voltage
temperature
coefficient*3
tPLH
Δ − VDET
ΔTa • − VDET
⎯
⎯
VDD = 6.0 V
⎯
Output transistor, VDD = 1.2 V
Nch, VDS = 0.5 V VDD = 2.4 V
Output transistor,
Nch, VDD = 10.0 V, VDS = 10.0 V
⎯
*1
Ta = −40 to 85 °C
(Ta = 25 °C unless otherwise specified)
Test
Min.
Typ.
Max.
Unit
circuit
*2
4.500 4.600
4.700
V
1
0.05
0.10
V
1
⎯
0.9
2.7
2
⎯
μA
0.95
10.0
V
1
⎯
0.59
1.36
mA
3
⎯
2.88
4.98
mA
3
⎯
⎯
⎯
0.1
μA
3
⎯
⎯
60
μs
1
⎯
±100
±350
ppm/°C
1
*1. −VDET: Actual detection voltage value
*2. Specified detection voltage value (−VDET(S))
*3. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
Δ − VDET
[mV/ °C]*1 = − VDET(S) (Typ.) [V ]*2 × Δ − VDET [ppm/ °C]*3 ÷ 1000
ΔTa
ΔTa • − VDET
*1. Temperature change of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
„ Precautions
• Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in
electrostatic protection circuit.
• In CMOS output products of the S-808xxC series, the through-type current flows at the detection and the
release. If the input impedance is high, oscillation may occur due to the voltage drop by the through-type
current during releasing.
• In CMOS output products oscillation may occur when a pull-down resistor is used, and falling speed of the
power supply voltage (VDD) is slow near the detection voltage.
• When designing for mass production using an application circuit described herein, the product deviation and
temperature characteristics should be taken into consideration. SII shall not bear any responsibility for the
products on the circuits described herein.
• SII claims no responsibility for any and all disputes arising out of or in connection with any infringement of the
products including this IC upon patents owned by a third party.
Seiko Instruments Inc.
29
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.6.1_00
„ Typical Characteristics (Typical Data)
1. Detection Voltage (VDET) - Temperature (Ta)
S-80808CL
S-80814CL
0.90
1.55
+VDET
1.50
+VDET
1.45
VDET (V)
VDET (V)
0.85
1.40
-VDET
1.35
0.80
-VDET
1.30
1.25
0.75
-40
-20
0
20
40
60
-40
80
-20
0
S-80815CL
20
40
60
80
20
40
60
80
20
40
60
80
40
60
80
Ta (°C)
Ta (°C)
S-80860CL
1.60
6.40
6.30
+VDET
VDET (V)
VDET (V)
1.55
1.50
-VDET
+VDET
6.20
6.10
6.00
-VDET
5.90
5.80
1.45
-40
-20
0
20
40
60
-40
80
-20
0
-20
0
Ta (°C)
Ta (°C)
2. Hysteresis Voltage Width (VHYS) - Temperature (Ta)
S-80808CL
8.0
S-80814CL
8.0
7.0
6.0
VHYS (%)
V HYS (%)
7.0
5.0
4.0
3.0
-40
6.0
5.0
4.0
3.0
-20
0
20
40
Ta (°C)
60
80
-40
Ta (°C)
S-80815CL
8.0
S-80860CL
8.0
7.0
VHYS (%)
V HYS (%)
7.0
6.0
5.0
4.0
3.0
-40
30
6.0
5.0
4.0
3.0
-20
0
20
40
Ta (°C)
60
80
-40
-20
0
20
Ta (°C)
Seiko Instruments Inc.
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.6.1_00
3. Current Consumption (ISS) - Input Voltage (VDD)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Ta=25°C
S-80814CL
9.3 μA
ISS (μA)
ISS (μA)
S-80808CL
0
1.0
2.0
3.0
4.0
5.0
Ta=25°C
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
21.5 μA
6.0
0
1.0
2.0
VDD (V)
Ta=25°C
4.7 μA
0
2.0
4.0
6.0
4.0
S-80860CL
ISS (μA)
ISS (μA)
S-80815CL
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
3.0
5.0
6.0
VDD (V)
8.0
10.0
Ta=25°C
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
12.8 μA
0
12.0
2.0
4.0
6.0
8.0
10.0
12.0
VDD (V)
VDD (V)
4. Current Consumption (ISS) - Temperature (Ta)
VDD=1.5 V
2.0
1.5
1.5
1.0
0.5
VDD=2.0 V
S-80814CL
2.0
ISS (μA)
ISS (μA)
S-80808CL
0.0
1.0
0.5
0.0
-40
-20
0
20
40
60
80
-40
-20
0
VDD=3.5 V
2.0
1.5
1.5
1.0
0.5
0.0
-20
0
20
40
S-80860CL
2.0
ISS (μA)
ISS (μA)
S-80815CL
-40
20
60
80
Ta (°C)
Ta (°C)
40
60
80
VDD=7.5 V
1.0
0.5
0.0
Ta (°C)
-40
-20
0
20
40
60
80
Ta (°C)
Seiko Instruments Inc.
31
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.6.1_00
5. Nch Transistor Output Current (IOUT) – VDS
S-80814CL/CN
5.0
Ta=25°C
VDD=1.3 V
4.0
3.0
2.0
VDD=1.0
1.0
VDD=0.7 V
Ta=25°C
6.0 V
40
IOUT (mA)
IOUT (mA)
S-80860CL/CN
50
4.8 V
30
3.6 V
20
2.4 V
10
0
VDD=1.2 V
0
0
0.5
1.0
1.5
VDS (V)
2.0
2.5
0
1.0
2.0
3.0
VDS (V)
4.0
5.0
6. Pch Transistor Output Current (IOUT) -VDS
Ta=25ºC
4.0
VDD=2.9V
3.0
VDD=2.4V
2.0
VDD=1.9 V
1.0
0
0.5
Ta=25ºC
8.4 V
25
VDD=1.4 V
VDD=0.9 V
0
S-80815CL
30
IOUT (mA)
IOUT (mA)
S-80808CL
5.0
20
7.2 V
6.0 V
15
4.8 V
3.6 V
10
5
VDD=2.4 V
0
1.0
1.5
VDS (V)
2.0
0
2.5
2.0
4.0
6.0
VDS (V)
8.0
10.0
7. Nch Transistor Output Current (IOUT) - Input Voltage (VDD)
S-80814CL/CN
VDS=0.5 V
6.0
VDS=0.5 V
S-80860CL/CN
20
Ta=-40°C
Ta=-40°C
15
Ta=25°C
IOUT (mA)
IOUT (mA)
4.5
3.0
1.5
Ta=25°C
10
5
Ta=85°
Ta=85°C
0
0
0.5
1.0
VDD (V)
1.5
0
2.0
0
2.0
4.0
VDD (V)
6.0
8.0
8. Pch Transistor Output Current (IOUT) - Input Voltage (VDD)
S-80808CL
VDS=0.5 V
3.0
Ta=25°C
1.5
1.0
Ta=85°C
0.5
4
Ta=25°C
3
2
Ta=85°C
1
0
0
0
1.0
2.0
3.0
4.0
5.0
6.0
VDD (V)
32
Ta=-40°C
5
IOUT (mA)
IOUT (mA)
2.0
6
Ta=-40°C
2.5
VDS=0.5 V
S-80815CL
0
2.0
4.0
6.0
VDD (V)
Seiko Instruments Inc.
8.0
10.0
12.0
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.6.1_00
9. Minimum Operating Voltage - Input Voltage (VDD)
S-80808CN
Pull-up to VDD 100 kΩ
4.0
0.9
3.0
Pull-up to 3 V
Ta=-40°C
VOUT (V)
Ta=-40°C
VOUT (V)
S-80808CN
1.2
0.6
Ta=25°C
0.3
Ta=85°C
0.0
Ta=25°C
2.0
Ta=85°C
1.0
0.0
0.0
0.2
0.4
0.6
1.0
0.8
0.2
0.4
Pull-up to VDD 100 kΩ
S-80815CN
0.6
0.8
1.0
VDD (V)
VDD (V)
S-80815CN
2.0
4.0
1.5
3.0
Pull-up to 3 V
VOUT (V)
VOUT (V)
Ta=-40°C
Ta=-40°C
1.0
Ta=25°C
0.5
Ta=85°C
0.0
Ta=25°C
2.0
Ta=85°C
1.0
0.0
0
0.5
1.0
1.5
2.0
0
VDD (V)
S-80808CN
1.0
1.5
2.0
VDD (V)
Pull-up to VDD :100 kΩ
0.65
0.60
0.5
Ta=-40°C
VOUT(V)
PULL-UP
VDDmin (V)
0.55
0.50
PULL-UP×0.1
0.45
0.40
Ta=25°C
0.35
0
Ta=85°C
VDDmin
0.30
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
PULL-UP (V)
S-80815CN
Remark VDDmin. is defined by the VDD voltage at
which VOUT goes below 10% of
PULL-UP voltage when the VDD
increase from 0 V.
Pull-up to VDD :100 kΩ
0.75
0.70
VDD(V)
Figure 24
Ta=-40°C
VDDmin (V)
0.65
0.60
0.55
0.50
0.45
Ta=85°C
Ta=25°C
0.40
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0
PULL-UP (V)
Seiko Instruments Inc.
33
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.6.1_00
10. Dynamic Response - COUT
S-80808CL
Ta=25°C
S-80808CN
Resopnse time (ms)
Response time (ms)
tpHL
0.1
0.01
tpLH
0.001
0.00001
0.0001
0.001
0.01
tpLH
10
1
0.1
tpHL
0.01
0.001
0.00001
0.1
Load capacitance (μF)
S-80814CL
Ta=25°C
0.1
0.01
tpLH
0.001
0.01
tpLH
1
0.1
tpHL
0.01
0.01
tpLH
0.001
0.01
tpLH
1
0.1
tpHL
0.01
0.0001
0.001
S-80860CN
Respone time (ms)
Response time (ms)
Ta=25°C
0.01
0.1
Ta=25°C
100
0.1
0.01
tpLH
0.0001
0.001
0.01
Load Capacitance (μF)
34
0.1
Load Capacitance (μF)
tpHL
0.001
0.00001
0.01
10
0.001
0.00001
0.1
Ta=25°C
1
0.001
100
Load Capacitance (μF)
S-80860CL
0.0001
S-80815CN
Response time (ms)
Response time (ms)
0.1
0.0001
Ta=25°C
Load Capacitance (μF)
tpHL
0.001
0.00001
0.1
10
0.001
0.00001
0.1
Ta=25°C
1
0.01
100
Load capacitanse (μF)
S-80815CL
0.001
S-80814CN
Response time (ms)
Response time (ms)
tpHL
0.0001
0.0001
Load capacitance (μF)
1
0.001
0.00001
Ta=25°C
100
1
0.1
tpLH
10
1
0.1
tpHL
0.01
0.001
0.00001
0.0001
0.001
0.01
Load Capacitance (μF)
Seiko Instruments Inc.
0.1
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.6.1_00
1 μs
1 μs
*1
VIH
VDD
Input voltagae
V
VIL
tpHL
VDD
S-808xxC OUT
Series
COUT
VSS
R
100 kΩ
V
tpLH
VDD
VDD×90 %
Output voltage
*1. R is unnecessary for CMOS output products.
VDD×10 %
VIH=10 V, VIL=0.95 V
Figure 25 Measurement Condition for Response Time
Figure 26 Measurement Circuit for Response Time
Caution The above connection diagram and constants do not guarantee correct operation. Perform
sufficient evaluation using the actual application to set the constants.
„ Application Circuit Examples
1. Microcomputer Reset Circuits
If the power supply voltage to a microcomputer falls below the specified level, an unspecified operation may
be performed or the contents of the memory register may be lost. When power supply voltage returns to
normal, the microcomputer needs to be initialized before normal operations can be done.
Reset circuits protect microcomputers in the event of current being momentarily switched off or lowered.
Reset circuits shown in Figures 27 to 28 can be easily constructed with the help of the S-808xxC series,
that has low operating voltage, a high-precision detection voltage and hysteresis.
VDD1
VDD2
VDD
S808xxCL
S808xxCN
Microcomputer
Microcomputer
VSS
VSS
(Only for Nch open-drain products)
Figure 27 Reset Circuit Example(S-808xxCL)
Figure 28 Reset Circuit Example (S-808xxCN)
Caution The above connection diagram and constants do not guarantee correct operation. Perform
sufficient evaluation using the actual application to set the constants.
Seiko Instruments Inc.
35
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.6.1_00
2. Power-on Reset Circuit
A power-on reset circuit can be constructed using Nch open-drain output product of S-808××C Series.
VDD
Di
*1
*2
R
VIN
(R≤75 kΩ)
S808xxCN
OUT
(Nch open-drain products)
C
VSS
*1. Resistor R should be 75 kΩ or less to prevent oscillation.
*2. Diode Di instantaneously discharges the charge stored in the capacitor (C) at the
power falling,Di can be removed when the delay of the falling time is not important.
Figure 29
VDD
(V)
OUT
(V)
t (s)
t (s)
Figure 30
Remark When the power rises sharply as shown in the Figure 31 left, the output may goes to the high level
for an instant in the undefined region where the output voltage is undefined since the power
voltage is less than the minimum operation voltage.
VDD
(V)
OUT
(V)
t (s)
t (s)
Figure 31
36
Seiko Instruments Inc.
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series
Rev.6.1_00
3. Change of Detection Voltage
In Nch open-drain output products of the S-808xxC series, detection voltage can be changed using
resistance dividers or diodes as shown in Figures 32 to 33. In Figure 32, hysteresis width also changes.
VDD
VDD
RA
Vf1
*1
(RA≤75 kΩ)
S808xxCN
VIN
Vf2
VIN
OUT
S808xxCN
+
RB
−
OUT
(Nch open-drain
output product)
(Nch open-drain
output products)
VSS
VSS
RA + RB
• − VDET
RB
RA + RB
Hysterisis width =
• VHYS
RB
Detection voltagae =
Detection voltage=Vf1+Vf2+(−VDET)
*1. RA should be 75 kΩ or less to prevent oscillation.
Caution If RA and RB are large, the hysteresis
width may aloso be larger than the
value given by the above equation due
to the through-type current (which
flows slightly in an Nch open-drain
product).
Figure 32
Figure 33
Caution The above connection diagram and constants do not guarantee correct operation. Perform
sufficient evaluation using the actual application to set the constants.
Seiko Instruments Inc.
37
2.0±0.2
1.3±0.2
4
3
0.05
+0.1
0.3 -0.05
+0.1
0.16 -0.06
2
1
+0.1
0.4 -0.05
No. NP004-A-P-SD-1.1
TITLE
SC82AB-A-PKG Dimensions
NP004-A-P-SD-1.1
No.
SCALE
UNIT
mm
Seiko Instruments Inc.
+0.1
ø1.5 -0
4.0±0.1
2.0±0.05
1.1±0.1
4.0±0.1
0.2±0.05
ø1.05±0.1
(0.7)
2.2±0.2
2
1
3
4
Feed direction
No. NP004-A-C-SD-3.0
TITLE
SC82AB-A-Carrier Tape
No.
NP004-A-C-SD-3.0
SCALE
UNIT
mm
Seiko Instruments Inc.
4.0±0.1
2.0±0.1
ø1.5
1.1±0.1
+0.1
-0
4.0±0.1
0.2±0.05
ø1.05±0.1
2.3±0.15
2
1
3
4
Feed direction
No. NP004-A-C-S1-2.0
TITLE
SC82AB-A-Carrier Tape
No.
NP004-A-C-S1-2.0
SCALE
UNIT
mm
Seiko Instruments Inc.
12.5max.
9.0±0.3
Enlarged drawing in the central part
ø13±0.2
(60°)
(60°)
No. NP004-A-R-SD-1.1
TITLE
SC82AB-A-Reel
No.
NP004-A-R-SD-1.1
QTY.
SCALE
UNIT
mm
Seiko Instruments Inc.
3,000
2.9±0.2
1.9±0.2
4
5
1
2
+0.1
0.16 -0.06
3
0.95±0.1
0.4±0.1
No. MP005-A-P-SD-1.2
TITLE
No.
SOT235-A-PKG Dimensions
MP005-A-P-SD-1.2
SCALE
UNIT
mm
Seiko Instruments Inc.
4.0±0.1(10 pitches:40.0±0.2)
+0.1
ø1.5 -0
2.0±0.05
+0.2
ø1.0 -0
0.25±0.1
4.0±0.1
1.4±0.2
3.2±0.2
3 2 1
4
5
Feed direction
No. MP005-A-C-SD-2.1
TITLE
SOT235-A-Carrier Tape
No.
MP005-A-C-SD-2.1
SCALE
UNIT
mm
Seiko Instruments Inc.
12.5max.
9.0±0.3
Enlarged drawing in the central part
ø13±0.2
(60°)
(60°)
No. MP005-A-R-SD-1.1
SOT235-A-Reel
TITLE
No.
MP005-A-R-SD-1.1
SCALE
QTY.
UNIT
mm
Seiko Instruments Inc.
3,000
4.5±0.1
1.5±0.1
1.6±0.2
1
2
3
1.5±0.1 1.5±0.1
0.4±0.05
45°
0.4±0.1
0.4±0.1
0.45±0.1
No. UP003-A-P-SD-1.1
TITLE
SOT893-A-PKG Dimensions
No.
UP003-A-P-SD-1.1
SCALE
UNIT
mm
Seiko Instruments Inc.
+0.1
ø1.5 -0
4.0±0.1(10 pitches : 40.0±0.2)
2.0±0.05
ø1.5 +0.1
-0
5° max.
0.3±0.05
8.0±0.1
2.0±0.1
4.75±0.1
Feed direction
No. UP003-A-C-SD-1.1
TITLE
SOT893-A-Carrier Tape
No.
UP003-A-C-SD-1.1
SCALE
UNIT
mm
Seiko Instruments Inc.
16.5max.
13.0±0.3
Enlarged drawing in the central part
(60°)
(60°)
No. UP003-A-R-SD-1.1
SOT893-A-Reel
TITLE
No.
UP003-A-R-SD-1.1
SCALE
UNIT
QTY.
mm
Seiko Instruments Inc.
1,000
1.2±0.04
3
4
+0.05
0.08 -0.02
2
1
0.65
0.48±0.02
0.2±0.05
No. PF004-A-P-SD-4.0
TITLE
SNT-4A-A-PKG Dimensions
PF004-A-P-SD-4.0
No.
SCALE
UNIT
mm
Seiko Instruments Inc.
+0.1
ø1.5 -0
4.0±0.1
2.0±0.05
0.25±0.05
+0.1
5°
1.45±0.1
2
1
3
4
ø0.5 -0
4.0±0.1
0.65±0.05
Feed direction
No. PF004-A-C-SD-1.0
TITLE
SNT-4A-A-Carrier Tape
PF004-A-C-SD-1.0
No.
SCALE
UNIT
mm
Seiko Instruments Inc.
12.5max.
9.0±0.3
Enlarged drawing in the central part
ø13±0.2
(60°)
(60°)
No. PF004-A-R-SD-1.0
SNT-4A-A-Reel
TITLE
PF004-A-R-SD-1.0
No.
SCALE
UNIT
QTY.
mm
Seiko Instruments Inc.
5,000
0.52
2
1.16
0.52
0.35
1.
2.
0.3
1
(0.25 mm min. / 0.30 mm typ.)
(1.10 mm ~ 1.20 mm)
0.03 mm
1. Pay attention to the land pattern width (0.25 mm min. / 0.30 mm typ.).
2. Do not widen the land pattern to the center of the package (1.10 mm to 1.20 mm).
Caution 1. Do not do silkscreen printing and solder printing under the mold resin of the package.
2. The thickness of the solder resist on the wire pattern under the package should be 0.03 mm
or less from the land pattern surface.
3. Match the mask aperture size and aperture position with the land pattern.
4. Refer to "SNT Package User's Guide" for details.
※1.
1. 䇋⊼ᛣ⛞Ⲭ῵ᓣⱘᆑᑺ(0.25 mm min. / 0.30 mm typ.)DŽ
2. 䇋䇋࣓৥ᇕ㺙Ё䯈ᠽሩ⛞Ⲭ῵ᓣ (1.10 mm ~ 1.20 mm)DŽ
※2.
⊼ᛣ1. 䇋࣓೼ᷥ㛖ൟᇕ㺙ⱘϟ䴶ॄࠋϱ㔥ǃ⛞䫵DŽ
2. ೼ᇕ㺙ϟǃᏗ㒓Ϟⱘ䰏⛞㝰८ᑺ (Ң⛞Ⲭ῵ᓣ㸼䴶䍋) 䇋᥻ࠊ೼0.03 mmҹϟDŽ
3. ᥽㝰ⱘᓔষሎᇌ੠ᓔষԡ㕂䇋Ϣ⛞Ⲭ῵ᓣᇍ唤DŽ
4. 䆺㒚‫ݙ‬ᆍ䇋খ䯙 "SNTᇕ㺙ⱘᑨ⫼ᣛफ"DŽ
TITLE
SNT-4A-A-Land Recommendation
PF004-A-L-SD-4.0
No.
No. PF004-A-L-SD-4.0
SCALE
UNIT
mm
Seiko Instruments Inc.
4.2max.
5.2max.
Marked side
0.6max.
0.45±0.1
0.45±0.1
1.27
No. YS003-D-P-SD-2.0
TITLE
No.
TO92-D-PKG Dimensions
YS003-D-P-SD-2.0
SCALE
UNIT
mm
Seiko Instruments Inc.
5.2max.
4.2max.
Marked side
0.6max.
0.45±0.1
0.45±0.1
+0.4
2.5 -0.1
1.27
No. YZ003-E-P-SD-2.0
TITLE
TO92-E-PKG Dimensions
No.
YZ003-E-P-SD-2.0
SCALE
UNIT
mm
Seiko Instruments Inc.
12.7±1.0
1.0max.
1.0max.
1.0max.
Marked side
1#pin
3#pin
1.45max.
0.7±0.2
ø4.0±0.2
6.35±0.4
12.7±0.3(20 pitches : 254.0±1.0)
Z type
Feed direction
No. YZ003-E-C-SD-1.1
TO92-E-Radial Tape
TITLE
YZ003-E-C-SD-1.1
No.
SCALE
UNIT
mm
Seiko Instruments Inc.
Spacer(Sponge)
312
18
35
Side spacer placed in front side
154
314
Space more than 4 strokes
162
333
43
No. YZ003-E-Z-SD-2.0
TITLE
TO92-E-Ammo Packing
No.
YZ003-E-Z-SD-2.0
SCALE
UNIT
QTY.
mm
Seiko Instruments Inc.
2,000
www.sii-ic.com
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The information described herein is subject to change without notice.
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When the products described herein are regulated products subject to the Wassenaar Arrangement or other
agreements, they may not be exported without authorization from the appropriate governmental authority.
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Use of the information described herein for other purposes and/or reproduction or copying without the
express permission of Seiko Instruments Inc. is strictly prohibited.
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The products described herein cannot be used as part of any device or equipment affecting the human
body, such as exercise equipment, medical equipment, security systems, gas equipment, vehicle equipment,
in-vehicle equipment, aviation equipment, aerospace equipment, and nuclear-related equipment, without prior
written permission of Seiko Instruments Inc.
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The products described herein are not designed to be radiation-proof.
Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein
whose related industrial properties, patents, or other rights belong to third parties. The application circuit
examples explain typical applications of the products, and do not guarantee the success of any specific
mass-production design.
Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the
failure or malfunction of semiconductor products may occur. The user of these products should therefore
give thorough consideration to safety design, including redundancy, fire-prevention measures, and
malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.