Rev.2.3_00 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series The S-1000 series is a series of high-precision voltage detectors developed using CMOS process. The detection voltage is fixed internally with an accuracy of ±1.0%. It operates with low current consumption of 350 nA typ. Two output forms, Nch open-drain and CMOS output, are available. CMOS voltage detector, S-1000 Series is the most suitable for the portable equipments with ultra low current consumption, high precision and corresponding to the small package. Features • • • • • • Ultra-low current consumption High-precision detection voltage Operating voltage range Hysteresis characteristics Detection voltage Output form 350 nA typ. (VDD = detection voltage + 1.5 V) ±1.0% 0.95 to 5.5 V 5% typ. 1.5 to 4.6 V (0.1 V step) Nch open-drain output (Active “L”) CMOS output (Active “L”) • Lead-free products Applications • Power monitor for microcomputers and reset for CPUs. • Power monitor for portable equipments such as cellular phones, digital still cameras and PDAs. • Constant voltage power monitor for cameras, video equipments and communication devices. Packages Package name SC-82AB SOT-23-5 SNT-4A Drawing code Package Tape Reel Land NP004-A MP005-A PF004-A NP004-A MP005-A PF004-A NP004-A MP005-A PF004-A − − PF004-A Seiko Instruments Inc. 1 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series Rev.2.3_00 Block Diagrams 1. Nch open-drain output products VDD − *1 OUT + *1 VREF VSS *1. Parasitic diode Figure 1 2. CMOS output products VDD *1 − OUT + *1 *1 VREF VSS *1. Parasitic diode Figure 2 2 Seiko Instruments Inc. ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series Rev.2.3_00 Product Name Structure The detection voltage, output form and packages for S-1000 series can be selected at the user's request. Refer to the "1. Product name" for the construction of the product name and "2. Product name list" for the full product names. 1. Product name S-1000 x xx - xxxx G Package name (abbreviation) and packing specifications*1 N4T1: SC-82AB, tape M5T1: SOT-23-5, tape I4T1: SNT-4A, tape Detection voltage value 15 ~ 46 (e.g. When the detection voltage is 1.5 V, it is expressed as 15.) Output form N: Nch open-drain output (Active “L”) C: CMOS output (Active “L”) *1. Refer to the taping specifications at the end of this book. Seiko Instruments Inc. 3 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series 2. Product name list 2. 1 Nch open-drain output products Table 1 4 Detection voltage range SC-82AB SOT-23-5 SNT-4A 1.5 V ± 1.0% 1.6 V ± 1.0% 1.7 V ± 1.0% 1.8 V ± 1.0% 1.9 V ± 1.0% 2.0 V ± 1.0% 2.1 V ± 1.0% 2.2 V ± 1.0% 2.3 V ± 1.0% 2.4 V ± 1.0% 2.5 V ± 1.0% 2.6 V ± 1.0% 2.7 V ± 1.0% 2.8 V ± 1.0% 2.9 V ± 1.0% 3.0 V ± 1.0% 3.1 V ± 1.0% 3.2 V ± 1.0% 3.3 V ± 1.0% 3.4 V ± 1.0% 3.5 V ± 1.0% 3.6 V ± 1.0% 3.7 V ± 1.0% 3.8 V ± 1.0% 3.9 V ± 1.0% 4.0 V ± 1.0% 4.1 V ± 1.0% 4.2 V ± 1.0% 4.3 V ± 1.0% 4.4 V ± 1.0% 4.5 V ± 1.0% 4.6 V ± 1.0% S-1000N15-N4T1G S-1000N16-N4T1G S-1000N17-N4T1G S-1000N18-N4T1G S-1000N19-N4T1G S-1000N20-N4T1G S-1000N21-N4T1G S-1000N22-N4T1G S-1000N23-N4T1G S-1000N24-N4T1G S-1000N25-N4T1G S-1000N26-N4T1G S-1000N27-N4T1G S-1000N28-N4T1G S-1000N29-N4T1G S-1000N30-N4T1G S-1000N31-N4T1G S-1000N32-N4T1G S-1000N33-N4T1G S-1000N34-N4T1G S-1000N35-N4T1G S-1000N36-N4T1G S-1000N37-N4T1G S-1000N38-N4T1G S-1000N39-N4T1G S-1000N40-N4T1G S-1000N41-N4T1G S-1000N42-N4T1G S-1000N43-N4T1G S-1000N44-N4T1G S-1000N45-N4T1G S-1000N46-N4T1G S-1000N15-M5T1G S-1000N16-M5T1G S-1000N17-M5T1G S-1000N18-M5T1G S-1000N19-M5T1G S-1000N20-M5T1G S-1000N21-M5T1G S-1000N22-M5T1G S-1000N23-M5T1G S-1000N24-M5T1G S-1000N25-M5T1G S-1000N26-M5T1G S-1000N27-M5T1G S-1000N28-M5T1G S-1000N29-M5T1G S-1000N30-M5T1G S-1000N31-M5T1G S-1000N32-M5T1G S-1000N33-M5T1G S-1000N34-M5T1G S-1000N35-M5T1G S-1000N36-M5T1G S-1000N37-M5T1G S-1000N38-M5T1G S-1000N39-M5T1G S-1000N40-M5T1G S-1000N41-M5T1G S-1000N42-M5T1G S-1000N43-M5T1G S-1000N44-M5T1G S-1000N45-M5T1G S-1000N46-M5T1G S-1000N15-I4T1G S-1000N16-I4T1G S-1000N17-I4T1G S-1000N18-I4T1G S-1000N19-I4T1G S-1000N20-I4T1G S-1000N21-I4T1G S-1000N22-I4T1G S-1000N23-I4T1G S-1000N24-I4T1G S-1000N25-I4T1G S-1000N26-I4T1G S-1000N27-I4T1G S-1000N28-I4T1G S-1000N29-I4T1G S-1000N30-I4T1G S-1000N31-I4T1G S-1000N32-I4T1G S-1000N33-I4T1G S-1000N34-I4T1G S-1000N35-I4T1G S-1000N36-I4T1G S-1000N37-I4T1G S-1000N38-I4T1G S-1000N39-I4T1G S-1000N40-I4T1G S-1000N41-I4T1G S-1000N42-I4T1G S-1000N43-I4T1G S-1000N44-I4T1G S-1000N45-I4T1G S-1000N46-I4T1G Seiko Instruments Inc. Rev.2.3_00 Rev.2.3_00 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series 2. 2 CMOS output products Table 2 Detection voltage range SC-82AB SOT-23-5 SNT-4A 1.5 V ± 1.0% 1.6 V ± 1.0% 1.7 V ± 1.0% 1.8 V ± 1.0% 1.9 V ± 1.0% 2.0 V ± 1.0% 2.1 V ± 1.0% 2.2 V ± 1.0% 2.3 V ± 1.0% 2.4 V ± 1.0% 2.5 V ± 1.0% 2.6 V ± 1.0% 2.7 V ± 1.0% 2.8 V ± 1.0% 2.9 V ± 1.0% 3.0 V ± 1.0% 3.1 V ± 1.0% 3.2 V ± 1.0% 3.3 V ± 1.0% 3.4 V ± 1.0% 3.5 V ± 1.0% 3.6 V ± 1.0% 3.7 V ± 1.0% 3.8 V ± 1.0% 3.9 V ± 1.0% 4.0 V ± 1.0% 4.1 V ± 1.0% 4.2 V ± 1.0% 4.3 V ± 1.0% 4.4 V ± 1.0% 4.5 V ± 1.0% 4.6 V ± 1.0% S-1000C15-N4T1G S-1000C16-N4T1G S-1000C17-N4T1G S-1000C18-N4T1G S-1000C19-N4T1G S-1000C20-N4T1G S-1000C21-N4T1G S-1000C22-N4T1G S-1000C23-N4T1G S-1000C24-N4T1G S-1000C25-N4T1G S-1000C26-N4T1G S-1000C27-N4T1G S-1000C28-N4T1G S-1000C29-N4T1G S-1000C30-N4T1G S-1000C31-N4T1G S-1000C32-N4T1G S-1000C33-N4T1G S-1000C34-N4T1G S-1000C35-N4T1G S-1000C36-N4T1G S-1000C37-N4T1G S-1000C38-N4T1G S-1000C39-N4T1G S-1000C40-N4T1G S-1000C41-N4T1G S-1000C42-N4T1G S-1000C43-N4T1G S-1000C44-N4T1G S-1000C45-N4T1G S-1000C46-N4T1G S-1000C15-M5T1G S-1000C16-M5T1G S-1000C17-M5T1G S-1000C18-M5T1G S-1000C19-M5T1G S-1000C20-M5T1G S-1000C21-M5T1G S-1000C22-M5T1G S-1000C23-M5T1G S-1000C24-M5T1G S-1000C25-M5T1G S-1000C26-M5T1G S-1000C27-M5T1G S-1000C28-M5T1G S-1000C29-M5T1G S-1000C30-M5T1G S-1000C31-M5T1G S-1000C32-M5T1G S-1000C33-M5T1G S-1000C34-M5T1G S-1000C35-M5T1G S-1000C36-M5T1G S-1000C37-M5T1G S-1000C38-M5T1G S-1000C39-M5T1G S-1000C40-M5T1G S-1000C41-M5T1G S-1000C42-M5T1G S-1000C43-M5T1G S-1000C44-M5T1G S-1000C45-M5T1G S-1000C46-M5T1G S-1000C15-I4T1G S-1000C16-I4T1G S-1000C17-I4T1G S-1000C18-I4T1G S-1000C19-I4T1G S-1000C20-I4T1G S-1000C21-I4T1G S-1000C22-I4T1G S-1000C23-I4T1G S-1000C24-I4T1G S-1000C25-I4T1G S-1000C26-I4T1G S-1000C27-I4T1G S-1000C28-I4T1G S-1000C29-I4T1G S-1000C30-I4T1G S-1000C31-I4T1G S-1000C32-I4T1G S-1000C33-I4T1G S-1000C34-I4T1G S-1000C35-I4T1G S-1000C36-I4T1G S-1000C37-I4T1G S-1000C38-I4T1G S-1000C39-I4T1G S-1000C40-I4T1G S-1000C41-I4T1G S-1000C42-I4T1G S-1000C43-I4T1G S-1000C44-I4T1G S-1000C45-I4T1G S-1000C46-I4T1G Seiko Instruments Inc. 5 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series Rev.2.3_00 Output Forms 1. Output forms in S-1000 series Table 3 Nch open-drain output products (Active “L”) “N” is the last letter of the product name. e.g. S-1000N S-1000 series CMOS output products (Active “L”) “C” is the last letter of the product name. e.g. S-1000C 2. Output form and their usage Table 4 Usage Different power supplies Active “L” reset for CPUs Active “H” reset for CPUs Detection voltage change by resistor divider • Example for two power supplies VDD1 VDD2 V/D Nch VSS OUT CPU Nch open-drain output products (Active “L”) Yes Yes No Yes • Example for one power supply VDD VDD V/D CMOS OUT CPU VSS V/D Nch VSS Figure 3 6 CMOS output products (Active “L”) No Yes No No Seiko Instruments Inc. OUT CPU ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series Rev.2.3_00 Pin Configurations Table 5 SC-82AB Top view 4 3 1 2 Pin No. Pin name Pin description 1 OUT Voltage detection output pin 2 VDD Voltage input pin NC*1 3 No connection 4 VSS GND pin *1. The NC pin is electrically open. The NC pin can be connected to VDD or VSS. Figure 4 Table 6 SOT-23-5 Top view 5 1 Pin No. Pin name Pin description 1 OUT Voltage detection output pin 2 VDD Voltage input pin 3 VSS GND pin NC*1 4 No connection NC*1 5 No connection *1. The NC pin is electrically open. The NC pin can be connected to VDD or VSS. 4 2 3 Figure 5 SNT-4A Table 7 Top view 1 4 2 3 Pin No. Pin name Pin description 1 OUT Voltage detection output pin 2 VSS GND pin NC*1 3 No connection 4 VDD Voltage input pin *1. The NC pin is electrically open. The NC pin can be connected to VDD or VSS. Figure 6 Seiko Instruments Inc. 7 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series Rev.2.3_00 Absolute Maximum Ratings Table 8 Item Power supply voltage Nch open-drain output products Output voltage CMOS output products Output current Symbol VDD − VSS VOUT IOUT SC-82AB Power dissipation PD SOT-23-5 SNT-4A Operating ambient temperature Topr Storage temperature Tstg (Ta = 25 °C unless otherwise specified) Absolute maximum ratings Unit 6 V VSS − 0.3 to VSS + 6 V V VSS − 0.3 to VDD + 0.3 50 mA 200 (When not mounted on board) mW 350*1 mW 300 (When not mounted on board) mW 600*1 mW 300*1 mW −40 to +85 °C −40 to +125 °C *1. When mounted on board [Mounted board] (1) Board size: 114.3 mm × 76.2 mm × t1.6 mm (2) Board name: JEDEC STANDARD51-7 Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions. Power Dissipation (PD) [mW] 700 600 500 SOT-23-5 400 SC-82AB 300 SNT-4A 200 100 0 0 100 150 50 Ambient Temperature (Ta) [°C] Figure 7 Power Dissipation of Package (When Mounted on Board) 8 Seiko Instruments Inc. Rev.2.3_00 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series Electrical Characteristics 1. Nch open-drain output products Table 9 (Ta = 25 °C unless otherwise specified) Item Symbol Detection voltage*1 −VDET Hysteresis width VHYS Current consumption ISS Operating voltage VDD Condition Typ. −VDET(S) −VDET(S) ×0.99 −VDET −VDET − ×0.03 ×0.05 VDD = −VDET(S) + 1.5 V S-1000N15 to 39 − 350 − VDD = 5.5 V S-1000N40 to 46 − Output current IOUT Output transistor, Nch, VDS = 0.5 V, VDD = 1.2 V Leakage current ILEAK Output transistor, Nch, VDS = 5.5 V, VDD = 5.5 V Response time tPLH ∆−VDET Detection voltage temperature coefficient*2 ∆Ta•−VDET Min. − Ta = −40 to +85 °C Max. Unit Measurement circuit V 1 −VDET(S) ×1.01 −VDET ×0.07 900 V 1 nA 2 − 350 900 nA 2 0.95 − 5.5 V 1 1.36 2.55 − mA 3 − − 100 nA 3 − − 60 µs 1 − ±100 ±350 ppm / °C 1 *1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the detection voltage range in Table 1.) *2. The temperature change ratio in the detection voltage [mV / °C] is calculated by using the following equation. ∆ − VDET [mV / °C]*1 = − VDET(S) (Typ.) [ V ]*2 × ∆ − VDET [ppm / °C]*3 ÷ 1000 ∆Ta • − VDET ∆Ta *1. Temperature change ratio of the detection voltage *2. Specified detection voltage *3. Detection voltage temperature coefficient Seiko Instruments Inc. 9 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series Rev.2.3_00 2. CMOS output products Table 10 (Ta = 25 °C unless otherwise specified) Item Condition Symbol Detection voltage*1 −VDET Hysteresis width VHYS Current consumption ISS Operating voltage VDD Output current IOUT Min. Typ. −VDET(S) −VDET(S) ×0.99 −VDET −VDET − ×0.03 ×0.05 VDD = −VDET(S)+ 1.5 V S-1000C15 to 39 − 350 − VDD = 5.5 V S-1000C40 to 46 − Output transistor, Nch, VDS = 0.5 V, VDD = 1.2 V Output transistor, Pch, VDS = 0.5 V, VDD = 5.5 V − Max. Unit Measurement circuit V 1 −VDET(S) ×1.01 −VDET ×0.07 900 V 1 nA 2 − 0.95 350 − 900 5.5 nA V 2 1 1.36 2.55 − mA 3 1.71 2.76 − mA 4 Response time tPLH − − 60 µs 1 ∆−V DET Detection voltage ppm/ Ta = −40 to +85 °C − ±100 ±350 1 temperature coefficient*2 ∆Ta•−VDET °C *1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the detection voltage range in Table 2.) *2. The temperature change ratio in the detection voltage [mV / °C] is calculated by using the following equation. ∆ − VDET [mV / °C]*1 = − VDET(S) (Typ.) [ V ]*2 × ∆ − VDET [ppm / °C]*3 ÷ 1000 ∆Ta • − VDET ∆Ta *1. Temperature change ratio of the detection voltage *2. Specified detection voltage *3. Detection voltage temperature coefficient 10 Seiko Instruments Inc. ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series Rev.2.3_00 Measurement Circuits 1. VDD VDD S-1000 V R*1 100 kΩ OUT Series V VSS *1. R is unnecessary for CMOS output products. Figure 8 2. A VDD VDD S-1000 OUT Series VSS Figure 9 3. VDD VDD S-1000 V OUT A Series VSS VDS V Figure 10 4. VDS VDD VDD S-1000 V Series V OUT A VSS Figure 11 Seiko Instruments Inc. 11 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series Rev.2.3_00 Timing Chart 1. Nch open-drain output products VDD Release voltage (+VDET) Hysteresis width (VHYS) Detection voltage (−VDET) Minimum operating voltage VSS R 100 kΩ VDD OUT VSS VDD V Output from the OUT pin VSS Figure 12 2. CMOS output products VDD Release voltage (+VDET) Hysteresis width (VHYS) Detection voltage (−VDET) Minimum operating voltage VSS VDD OUT VSS VDD V Output from the OUT pin VSS Remark For values of VDD less than minimum operating voltage, values of OUT terminal output is free in the shaded region. Figure 13 12 Seiko Instruments Inc. Rev.2.3_00 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series Operation 1. Basic operation: CMOS output (Active “L”) (1) When the power supply voltage (VDD) is higher than the release voltage (+VDET), the Nch transistor is OFF and the Pch transistor is ON to provide VDD (“H”) at the output. Since the Nch transistor N1 in Figure 14 is OFF, the (RB + RC) • VDD comparator input voltage is . RA + RB + RC (2) When the VDD goes below +VDET, the output provides the VDD level, as long as the VDD remains above the detection voltage −VDET. When the VDD falls below −VDET (point A in Figure 15), the Nch transistor becomes ON, the Pch transistor becomes OFF, and the VSS level appears at the output. At this time the Nch transistor N1 in Figure 14 RB • VDD becomes ON, the comparator input voltage is changed to . RA + RB (3) When the VDD falls below the minimum operating voltage, the output becomes undefined, or goes to the VDD when the output is pulled up to the VDD. (4) The VSS level appears when the VDD rises above the minimum operating voltage. The VSS level still appears even when the VDD surpasses −VDET, as long as it does not exceed the release voltage +VDET. (5) When the VDD rises above +VDET (point B in Figure 15), the Nch transistor becomes OFF and the Pch transistor becomes ON to provide VDD level at the output. VDD *1 RA *1 − Pch OUT + *1 RB Nch VREF RC VSS N1 *1. Parasiteic diode Figure 14 Operation 1 Seiko Instruments Inc. 13 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series (1) (2) (3) (4) B A Hysteresis width (VHYS) Rev.2.3_00 (5) VDD Release voltage (+VDET) Detection voltage (−VDET) Minimum operating voltage VSS VDD Output from the OUT pin VSS Figure 15 Operation 2 2. Other characteristics 2. 1 Temperature characteristics of detection voltage The shaded area in Figure 16 shows the temperature characteristics of the detection voltage. −VDET [V] +0.945 mV/°C −VDET25 *1 −0.945 mV/°C −40 25 85 Ta [°C] *1. −VDET25 is an actual detection voltage value at 25°C. Figure 16 Temperature characteristics of detection voltage (Example for −VDET = 2.7 V) 2. 2 Temperature characteristics of release voltage ∆ + VDET ∆ − VDET of the release voltage is calculated by the temperature change of the ∆Ta ∆Ta detection voltage as follows: ∆ + VDET + VDET ∆ − VDET = × ∆Ta − VDET ∆Ta The temperature changes of the release voltage and the detection voltage have the same sign consequently. The temperature change 14 Seiko Instruments Inc. Rev.2.3_00 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series 2. 3 Temperature characteristics of hysteresis voltage The temperature changes of the hysteresis voltage is expressed as ∆ + VDET ∆ − VDET and is calculated as − ∆Ta ∆Ta follows: ∆ + VDET ∆ − VDET VHYS ∆ − VDET − = × ∆Ta ∆Ta − VDET ∆Ta Standard Circuit 1 R* 100 kΩ VDD OUT VSS *1. R is unnecessary for CMOS output products. Figure 17 Caution The above connection diagram and constants do not guarantee correct operation. Perform sufficient evaluation using the actual application to set the constants. Explanation of Terms 1. Detection voltage (−VDET), release voltage (+VDET) The detection voltage (−VDET) is a voltage at which the output turns to “L”. The detection voltage varies slightly among products of the same specification. The variation of detection voltage between the specified minimum (−VDET) Min. and the maximum (−VDET) Max. is called the detection voltage range (Refer to Figure 18). Example: For the S-1000C15, the detection voltage lies in the range of 1.485 ≤ (−VDET) ≤ 1.515. This means that some S-1000C15s have 1.485 V for −VDET and some have 1.515 V. The release voltage is a voltage at which the output turns to “H”. The release voltage varies slightly among products of the same specification. The variation of release voltages between the specified minimum (+VDET) Min. and the maximum (+VDET) Max. is called the release voltage range (Refer to Figure 19). The range is calculed from the actual detection voltage (−VDET) of a product and is expressed by −VDET × 1.03 ≤ +VDET ≤ −VDET × 1.07. Example: For the S-1000C15, the release voltage lies in the range of 1.530 ≤ (+VDET) ≤ 1.621. This means that some S-1000C15s have 1.530 V for +VDET and some have 1.621 V. Seiko Instruments Inc. 15 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series VDD Rev.2.3_00 VDD Detection voltage Release voltage (+VDET) Max. (−VDET) Max. Detection voltage range (−VDET) Min. Release voltage range (+VDET) Min. OUT OUT Figure 18 Detection voltage (CMOS output products) Figure 19 Release voltage (CMOS output products) 2. Hysteresis width (VHYS) The hysteresis width is the voltage difference between the detection voltage and the release voltage (The voltage at point B − The voltage at point A = VHYS in Figure 15). The existence of the hysteresis width prevents malfunction caused by noise on input signal. 3. Through-type current The through-type current refers to the current that flows instantaneously at the time of detection and release of a voltage detector. The through-type current is large in CMOS output products, small in Nch open-drain output products. 4. Oscillation In applications where a resistor is connected to the voltage detector input (Figure 20), taking a CMOS active “L” product for example, the through-type current which is generated when the output goes from “L” to “H” (release) causes a voltage drop equal to [through-type current] × [input resistance] across the resistor. When the input voltage drops below the detection voltage (−VDET) as a result, the output voltage goes to low level. In this state, the through-type current stops and its resultant voltage drop disappears, and the output goes from “L” to “H”. The through-type current is then generated again, a voltage drop appears, and repeating the process finally induces oscillation. VDD RA VIN S-1000C OUT RB VSS Figure 20 An example for bad implementation of input voltage divider 16 Seiko Instruments Inc. Rev.2.3_00 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series Precautions • If the input impedance is high, oscillation may occur due to the through-type current etc. In COMS output products, impedance should not be connected to the input pin. In Nch open drain output products, input impedance is recommended to be 800 Ω or less. However be sure to perform sufficient evaluation under the actual usage conditions for selection, including evaluation of temperature characteristics. • In CMOS output products oscillation may occur when a pull-down resistor is used, and falling speed of the power supply voltage (VDD) is slow near the detection voltage. • When designing for mass production using an application circuit described herein, the product deviation and temperature characteristics should be taken into consideration. SII shall not bear any responsibility for the products on the circuits described herein. • Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic protection circuit. • SII claims no responsibility for any and all disputes arising out of or in connection with any infringement of the products including this IC upon patents owned by a third party. Seiko Instruments Inc. 17 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series Rev.2.3_00 Typical Characteristics (Typical Data) 1. Detection voltage (VDET) − temperature (Ta) +VDET -VDET -20 0 20 40 Ta [°C] S-1000C46 4.85 4.80 4.75 4.70 4.65 4.60 4.55 4.50 4.45 4.40 -40 +VDET VDET [V] VDET [V] S-1000C15 1.59 1.58 1.57 1.56 1.55 1.54 1.53 1.52 1.50 1.49 -40 60 80 -VDET -20 0 20 40 Ta [°C] 60 80 -20 0 20 40 Ta [°C] 60 80 2. Hysteresis voltage width − (VHYS) - temperature (Ta) 7.0 7.0 VHYS [%] S-1000C46 8.0 VHYS [%] S-1000C15 8.0 6.0 5.0 6.0 5.0 4.0 4.0 3.0 3.0 -40 -20 0 20 40 Ta [°C] 60 -40 80 S-1000C15 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 1.0 Ta = 25 °C S-1000C46 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 Ta = 25 °C ISS [µA] ISS [µA] 3. Current consumption (ISS) − input voltage (VDD) 2.0 3.0 4.0 VDD [V] 5.0 6.0 1.0 2.0 3.0 4.0 VDD [V] 5.0 6.0 4. Current consumption (ISS) − temperature (Ta) S-1000C15 0.8 VDD = 3.0 V S-1000C46 0.8 0.6 ISS [µA] ISS [µA] 0.6 0.4 0.2 0.4 0.2 0.0 0.0 -40 18 VDD = 5.5 V -20 0 20 40 Ta [°C] 60 80 Seiko Instruments Inc. -40 -20 0 20 40 Ta [°C] 60 80 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series Rev.2.3_00 5. Nch transistor output current (IOUT) − VDS Ta = 25 °C VDD = 3.6 V 15.0 VDD = 2.4 V 10.0 5.0 0 VDD = 1.2 V VDD = 1.0 V 0 2.0 VDS [V] 1.0 S-1000C46 / S-1000N46 8.0 6.0 10.0 VDD = 3.6 V VDD = 2.4 V VDD = 1.9 V 5.0 0 1.0 2.0 VDS [V] 3.0 4.0 S-1000C15 VDS = 0.5 V 4.0 IOUT [mA] Ta = 85 °C 2.0 3.0 VDD [V] Ta = -40 °C Ta = 25 °C 3.0 2.0 Ta = 85 °C 1.0 0 1.0 VDD = 4.6 V 8. Pch transistor output current (IOUT) VDS = 0.5 V 2.0 0 15.0 4.0 Ta = -40 °C Ta = 25 °C 4.0 Ta = 25 °C 0 3.0 7. Nch transistor output current (IOUT) IOUT [mA] S-1000C15 20.0 IOUT [mA] IOUT [mA] S-1000C46 / S-1000N46 20.0 6. Pch transistor output current (IOUT) − VDS 0 5.0 4.0 0 2.0 4.0 VDD [V] 6.0 8.0 9. Minimum operating voltage - input voltage (VDD) S-1000N15 Pull-up to VDD Pull-up resistance : 100 kΩ 0.8 VOUT [V] VOUT [V] 3.0 Ta = -40 °C 2.5 0.6 Ta = -40 °C Ta = 25 °C Ta = 85 °C 0.4 0.2 Ta = 25 °C 2.0 Ta = 85 °C 1.5 1.0 0.5 0 0 0 0.2 0.6 0.4 VDD [V] 1.0 0.8 Pull-up to VDD Pull-up resistance : 100 kΩ S-1000N46 0.8 0 0.5 6.0 VOUT [V] 0.4 Ta = 25 °C Ta = 85 °C 0.2 2.0 2.5 Ta = -40 °C Ta = 25 °C 5.0 Ta = -40 °C 1.5 1.0 VDD [V] Pull-up to 5.5 V Pull-up resistance : 100 kΩ S-1000N46 0.6 VOUT [V] Pull-up to 3.0 V Pull-up resistance : 100 kΩ S-1000N15 4.0 Ta = 85 °C 3.0 2.0 1.0 0 0 0 0.2 0.6 0.4 VDD [V] 0.8 1.0 Seiko Instruments Inc. 0 1.0 3.0 2.0 VDD [V] 4.0 5.0 19 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series S-1000N15 0.60 VDDmin [V] 0.55 Pull-up resistance : 100 kΩ VOUT(V) Ta = -40 °C 0.50 PULL-UP Ta = 25 °C 0.45 PULL-UP×0.1 Ta = 85 °C 0.40 0 0.35 0.30 VDD(V) VDDmin 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Pull-up [V] S-1000N46 0.60 0.55 VDDmin [V] Rev.2.3_00 Remark VDDmin. is defined by the VDD voltage at which VOUT goes below 10% of pull-up voltage when the VDD increase from 0 V. Pull-up resistance : 100 kΩ Figure 21 Ta = -40 °C 0.50 0.45 Ta = 25 °C 0.40 Ta = 85 °C 0.35 0.30 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Pull-up [V] 10. Dynamic response - COUT 10 1 0.1 0.001 0.00001 S-1000N46 Response time [ms] 100 20 tPLH 0.01 10 tPHL 0.0001 0.001 0.01 Load capacitance [µF] 0.1 Pull-up to VDD Pull-up resistance : 100 kΩ Ta = 25 °C tPLH 1 0.1 0.01 0.001 0.00001 tPHL 0.0001 0.001 0.01 Load capacitance [µF] S-1000C15 0.1 Ta = 25 °C 1 0.1 tPHL 0.01 tPLH 0.001 0.00001 0.0001 0.001 0.01 Load capacitance [µF] 0.1 S-1000C46 Response time [ms] Response time [ms] 100 Pull-up to VDD Pull-up resistance : 100 kΩ Ta = 25 °C Response time [ms] S-1000N15 Ta = 25 °C 1 0.1 tPLH 0.01 tPHL 0.001 0.00001 Seiko Instruments Inc. 0.0001 0.001 0.01 Load capacitance [µF] 0.1 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series Rev.2.3_00 1 µs 1 µs VIH VDD S-1000 Input voltagae V Series VSS VIL R*1 VDD COUT tPLH tPHL VDD VDD × 90% Output voltage 100 kΩ OUT V *1. R is unnecessary for CMOS output products. Figure 23 Measurement circuit for response time VDD × 10% VIH = 5.5 V, VIL = 0.95 V Figure 22 Measurement condition for response time Caution The above connection diagram and constants do not guarantee correct operation. Perform sufficient evaluation using the actual application to set the constants. Application Circuit Examples 1. Microcomputer reset circuits If the power supply voltage to a microcomputer falls below the specified level, an unspecified operation may be performed or the contents of the memory register may be lost. When power supply voltage returns to normal, the microcomputer needs to be initialized before normal operations can be done. Reset circuits protect microcomputers in the event of current being momentarily switched off or lowered. Reset circuits shown in Figures 24, 25 can be easily constructed with the help of the S-1000 series, that has low operating voltage, a high-precision detection voltage and hysteresis. VDD1 VDD2 VDD S-1000N S-1000C Microcomputer Microcomputer VSS VSS (Only for Nch open-drain products) Figure 24 Reset circuit example(S-1000C) Figure 25 Reset circuit example (S-1000N) Caution The above connection diagram and constants do not guarantee correct operation. Perform sufficient evaluation using the actual application to set the constants. Seiko Instruments Inc. 21 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series Rev.2.3_00 2. Power-on reset circuit A power-on reset circuit can be constructed using Nch open-drain output product of S-1000 Series. VDD R *1 Di *2 VIN S-1000N OUT (Nch open-drain products) C*1 VSS *1. R should be 75 kΩ or less, and C should be 0.01 µF or more to prevent oscillation. If C is not connected, R should be 800 Ω or less. *2. Diode Di instantaneously discharges the charge stored in the capacitor (C) at the power falling, Di can be removed when the delay of the falling time is not important. Figure 26 VDD (V) OUT (V) t (s) t (s) Figure 27 Remark When the power rises sharply as shown in the Figure 28 left, the output may go to the high level for an instant in the undefined region where the output voltage is undefined since the power voltage is less than the minimum operation voltage. VDD (V) OUT (V) t (s) t (s) Figure 28 Caution The above connection diagram and constants do not guarantee correct operation. Perform sufficient evaluation using the actual application to set the constants. 22 Seiko Instruments Inc. ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series Rev.2.3_00 3. Change of detection voltage In Nch open-drain output products of the S-1000 series, detection voltage can be changed using resistance dividers or diodes as shown in Figures 29 to 30. In Figure 29, hysteresis width also changes. VDD VDD RA Vf1 *1 Vf2 VIN S-1000N VIN OUT S-1000N + RB C *1 − OUT (Nch open-drain output product) (Nch open-drain output products) VSS VSS RA + RB • − VDET RB RA + RB Hysterisis width = • VHYS RB Detection voltagae = Detection voltage = Vf1+Vf2+(−VDET) Figure 30 *1. RA should be 75 kΩ or less, and C should be 0.01 µF or more to prevent oscillation. If C is not connected, RA should be 800 Ω or less. Caution If RA and RB are large, the hysteresis width may also be larger than the value given by the above equation due to the through-type current (which flows slightly in an Nch open-drain product). Figure 29 Caution The above connection diagram and constants do not guarantee correct operation. Perform sufficient evaluation using the actual application to set the constants. Seiko Instruments Inc. 23 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series Rev.2.3_00 Marking Specifications (1) SC-82AB SC-82AB Top view 4 Product code (refer to Product name vs. Product code) 3 (1) 1 (1) to (3): (2) (3) 2 Product name vs. Product code (a) Nch open-drain output products Product Code Product Name (1) (2) (3) S-1000N15-N4T1G P L A S-1000N16-N4T1G P L B S-1000N17-N4T1G P L C S-1000N18-N4T1G P L D S-1000N19-N4T1G P L E S-1000N20-N4T1G P L F S-1000N21-N4T1G P L G S-1000N22-N4T1G P L H S-1000N23-N4T1G P L I S-1000N24-N4T1G P L J S-1000N25-N4T1G P L K S-1000N26-N4T1G P L L S-1000N27-N4T1G P L M S-1000N28-N4T1G P L N S-1000N29-N4T1G P L O S-1000N30-N4T1G P L P Product Name S-1000N31-N4T1G S-1000N32-N4T1G S-1000N33-N4T1G S-1000N34-N4T1G S-1000N35-N4T1G S-1000N36-N4T1G S-1000N37-N4T1G S-1000N38-N4T1G S-1000N39-N4T1G S-1000N40-N4T1G S-1000N41-N4T1G S-1000N42-N4T1G S-1000N43-N4T1G S-1000N44-N4T1G S-1000N45-N4T1G S-1000N46-N4T1G Product Code (1) (2) (3) P L Q P L R P L S P L T P L U P L V P L W P L X P L Y P L Z P L 2 P L 3 P L 4 P L 5 P L 6 P L 7 (b) CMOS output products Product Name S-1000C15-N4T1G S-1000C16-N4T1G S-1000C17-N4T1G S-1000C18-N4T1G S-1000C19-N4T1G S-1000C20-N4T1G S-1000C21-N4T1G S-1000C22-N4T1G S-1000C23-N4T1G S-1000C24-N4T1G S-1000C25-N4T1G S-1000C26-N4T1G S-1000C27-N4T1G S-1000C28-N4T1G S-1000C29-N4T1G S-1000C30-N4T1G 24 Product Code (1) (2) (3) P A K P B K P C K P D K P E K P F K P G K P H K P I K P J K P K K P L K P M K N P K P O K P P K Product Name S-1000C31-N4T1G S-1000C32-N4T1G S-1000C33-N4T1G S-1000C34-N4T1G S-1000C35-N4T1G S-1000C36-N4T1G S-1000C37-N4T1G S-1000C38-N4T1G S-1000C39-N4T1G S-1000C40-N4T1G S-1000C41-N4T1G S-1000C42-N4T1G S-1000C43-N4T1G S-1000C44-N4T1G S-1000C45-N4T1G S-1000C46-N4T1G Seiko Instruments Inc. Product Code (1) (2) (3) P Q K P R K P S K P T K P U K P V K P W K P X K P Y K P Z K P 2 K P 3 K P 4 K P 5 K P 6 K P 7 K ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series Rev.2.3_00 (2) SOT-23-5 SOT-23-5 Top view 5 (1) to (3) : (4) : 4 Product code (refer to Product name vs. Product code) Lot number (1) (2) (3) (4) 1 2 3 Product name vs. Product code (a) Nch open-drain output products Product Code Product Name (1) (2) (3) S-1000N15-M5T1G P L A S-1000N16-M5T1G P L B S-1000N17-M5T1G P L C S-1000N18-M5T1G P L D S-1000N19-M5T1G P L E S-1000N20-M5T1G P L F S-1000N21-M5T1G P L G S-1000N22-M5T1G P L H S-1000N23-M5T1G P L I S-1000N24-M5T1G P L J S-1000N25-M5T1G P L K S-1000N26-M5T1G P L L S-1000N27-M5T1G P L M S-1000N28-M5T1G P L N S-1000N29-M5T1G P L O S-1000N30-M5T1G P L P Product Name S-1000N31-M5T1G S-1000N32-M5T1G S-1000N33-M5T1G S-1000N34-M5T1G S-1000N35-M5T1G S-1000N36-M5T1G S-1000N37-M5T1G S-1000N38-M5T1G S-1000N39-M5T1G S-1000N40-M5T1G S-1000N41-M5T1G S-1000N42-M5T1G S-1000N43-M5T1G S-1000N44-M5T1G S-1000N45-M5T1G S-1000N46-M5T1G Product Code (1) (2) (3) P L Q P L R P L S P L T P L U P L V P L W P L X P L Y P L Z P L 2 P L 3 P L 4 P L 5 P L 6 P L 7 (b) CMOS output products Product Name S-1000C15-M5T1G S-1000C16-M5T1G S-1000C17-M5T1G S-1000C18-M5T1G S-1000C19-M5T1G S-1000C20-M5T1G S-1000C21-M5T1G S-1000C22-M5T1G S-1000C23-M5T1G S-1000C24-M5T1G S-1000C25-M5T1G S-1000C26-M5T1G S-1000C27-M5T1G S-1000C28-M5T1G S-1000C29-M5T1G S-1000C30-M5T1G Product Code (1) (2) (3) A P K P B K C P K P D K P E K P F K P G K P H K P I K P J K P K K P L K P M K P N K P O K P P K Product Name S-1000C31-M5T1G S-1000C32-M5T1G S-1000C33-M5T1G S-1000C34-M5T1G S-1000C35-M5T1G S-1000C36-M5T1G S-1000C37-M5T1G S-1000C38-M5T1G S-1000C39-M5T1G S-1000C40-M5T1G S-1000C41-M5T1G S-1000C42-M5T1G S-1000C43-M5T1G S-1000C44-M5T1G S-1000C45-M5T1G S-1000C46-M5T1G Seiko Instruments Inc. Product Code (1) (2) (3) P Q K P R K P S K P T K P U K P V K P W K P X K P Y K P Z K P 2 K P 3 K P 4 K P 5 K P 6 K P 7 K 25 ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR S-1000 Series Rev.2.3_00 (3) SNT-4A SNT-4A Top view (1) to (3): Product code (refer to Product name vs. Product code) 4 1 (1) (2) (3) 2 3 Product name vs. Product code (a) Nch open-drain output products Product Code Product Name (1) (2) (3) S-1000N15-I4T1G P L A S-1000N16-I4T1G P L B S-1000N17-I4T1G P L C S-1000N18-I4T1G P L D S-1000N19-I4T1G P L E S-1000N20-I4T1G P L F S-1000N21-I4T1G P L G S-1000N22-I4T1G P L H S-1000N23-I4T1G P L I S-1000N24-I4T1G P L J S-1000N25-I4T1G P L K S-1000N26-I4T1G P L L S-1000N27-I4T1G P L M S-1000N28-I4T1G P L N S-1000N29-I4T1G P L O S-1000N30-I4T1G P L P Product Name S-1000N31-I4T1G S-1000N32-I4T1G S-1000N33-I4T1G S-1000N34-I4T1G S-1000N35-I4T1G S-1000N36-I4T1G S-1000N37-I4T1G S-1000N38-I4T1G S-1000N39-I4T1G S-1000N40-I4T1G S-1000N41-I4T1G S-1000N42-I4T1G S-1000N43-I4T1G S-1000N44-I4T1G S-1000N45-I4T1G S-1000N46-I4T1G Product Code (1) (2) (3) P L Q P L R P L S P L T P L U P L V P L W P L X P L Y P L Z P L 2 P L 3 P L 4 P L 5 P L 6 P L 7 (b) CMOS output products Product Name S-1000C15-I4T1G S-1000C16-I4T1G S-1000C17-I4T1G S-1000C18-I4T1G S-1000C19-I4T1G S-1000C20-I4T1G S-1000C21-I4T1G S-1000C22-I4T1G S-1000C23-I4T1G S-1000C24-I4T1G S-1000C25-I4T1G S-1000C26-I4T1G S-1000C27-I4T1G S-1000C28-I4T1G S-1000C29-I4T1G S-1000C30-I4T1G 26 Product Code (1) (2) (3) P A K B P K P C K P D K P E K F P K P G K P H K P I K P J K P K K P L K P M K P N K O P K P P K Product Name S-1000C31-I4T1G S-1000C32-I4T1G S-1000C33-I4T1G S-1000C34-I4T1G S-1000C35-I4T1G S-1000C36-I4T1G S-1000C37-I4T1G S-1000C38-I4T1G S-1000C39-I4T1G S-1000C40-I4T1G S-1000C41-I4T1G S-1000C42-I4T1G S-1000C43-I4T1G S-1000C44-I4T1G S-1000C45-I4T1G S-1000C46-I4T1G Seiko Instruments Inc. Product Code (1) (2) (3) P Q K P R K P S K P T K P U K P V K P W K P X K P Y K P Z K P 2 K P 3 K P 4 K P 5 K P 6 K P 7 K 2.0±0.2 1.3±0.2 4 3 0.05 +0.1 0.3 -0.05 +0.1 0.16 -0.06 2 1 +0.1 0.4 -0.05 No. NP004-A-P-SD-1.1 TITLE SC82AB-A-PKG Dimensions NP004-A-P-SD-1.1 No. SCALE UNIT mm Seiko Instruments Inc. +0.1 ø1.5 -0 4.0±0.1 2.0±0.05 1.1±0.1 4.0±0.1 0.2±0.05 ø1.05±0.1 (0.7) 2.2±0.2 2 1 3 4 Feed direction No. NP004-A-C-SD-3.0 TITLE SC82AB-A-Carrier Tape No. NP004-A-C-SD-3.0 SCALE UNIT mm Seiko Instruments Inc. 4.0±0.1 2.0±0.1 ø1.5 1.1±0.1 +0.1 -0 4.0±0.1 0.2±0.05 ø1.05±0.1 2.3±0.15 2 1 3 4 Feed direction No. NP004-A-C-S1-2.0 TITLE SC82AB-A-Carrier Tape No. NP004-A-C-S1-2.0 SCALE UNIT mm Seiko Instruments Inc. 12.5max. 9.0±0.3 Enlarged drawing in the central part ø13±0.2 (60°) (60°) No. NP004-A-R-SD-1.1 TITLE SC82AB-A-Reel No. NP004-A-R-SD-1.1 QTY. SCALE UNIT mm Seiko Instruments Inc. 3,000 2.9±0.2 1.9±0.2 4 5 1 2 +0.1 0.16 -0.06 3 0.95±0.1 0.4±0.1 No. MP005-A-P-SD-1.2 TITLE No. SOT235-A-PKG Dimensions MP005-A-P-SD-1.2 SCALE UNIT mm Seiko Instruments Inc. 4.0±0.1(10 pitches:40.0±0.2) +0.1 ø1.5 -0 2.0±0.05 +0.2 ø1.0 -0 0.25±0.1 4.0±0.1 1.4±0.2 3.2±0.2 3 2 1 4 5 Feed direction No. MP005-A-C-SD-2.1 TITLE SOT235-A-Carrier Tape No. MP005-A-C-SD-2.1 SCALE UNIT mm Seiko Instruments Inc. 12.5max. 9.0±0.3 Enlarged drawing in the central part ø13±0.2 (60°) (60°) No. MP005-A-R-SD-1.1 SOT235-A-Reel TITLE No. MP005-A-R-SD-1.1 SCALE QTY. UNIT mm Seiko Instruments Inc. 3,000 1.2±0.04 3 4 +0.05 0.08 -0.02 2 1 0.65 0.48±0.02 0.2±0.05 No. PF004-A-P-SD-4.0 TITLE SNT-4A-A-PKG Dimensions PF004-A-P-SD-4.0 No. SCALE UNIT mm Seiko Instruments Inc. +0.1 ø1.5 -0 4.0±0.1 2.0±0.05 0.25±0.05 +0.1 5° 1.45±0.1 2 1 3 4 ø0.5 -0 4.0±0.1 0.65±0.05 Feed direction No. PF004-A-C-SD-1.0 TITLE SNT-4A-A-Carrier Tape PF004-A-C-SD-1.0 No. SCALE UNIT mm Seiko Instruments Inc. 12.5max. 9.0±0.3 Enlarged drawing in the central part ø13±0.2 (60°) (60°) No. PF004-A-R-SD-1.0 SNT-4A-A-Reel TITLE PF004-A-R-SD-1.0 No. SCALE UNIT QTY. mm Seiko Instruments Inc. 5,000 0.52 1.16 0.52 0.3 0.35 0.3 Caution Making the wire pattern under the package is possible. However, note that the package may be upraised due to the thickness made by the silk screen printing and of a solder resist on the pattern because this package does not have the standoff. No. PF004-A-L-SD-3.0 TITLE SNT-4A-A-Land Recommendation PF004-A-L-SD-3.0 No. SCALE UNIT mm Seiko Instruments Inc. • • • • • • The information described herein is subject to change without notice. Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein whose related industrial properties, patents, or other rights belong to third parties. The application circuit examples explain typical applications of the products, and do not guarantee the success of any specific mass-production design. When the products described herein are regulated products subject to the Wassenaar Arrangement or other agreements, they may not be exported without authorization from the appropriate governmental authority. Use of the information described herein for other purposes and/or reproduction or copying without the express permission of Seiko Instruments Inc. is strictly prohibited. The products described herein cannot be used as part of any device or equipment affecting the human body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus installed in airplanes and other vehicles, without prior written permission of Seiko Instruments Inc. Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the failure or malfunction of semiconductor products may occur. The user of these products should therefore give thorough consideration to safety design, including redundancy, fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.